公开(公告)号：WO2013165620A1

公开(公告)日：2013-11-07

申请号：PCT/US2013/032613

申请日：2013-03-15

Applicant: STC.UNM

Inventor： BRUECK, Steven, R., J. ,  LEE, Seung-Chang ,  WETZEL, Christian ,  DETCHPROHM, Theeradetch ,  STARK, Christoph

IPC: H01L21/20 ,  H01L33/12

CPC classification number: H01L29/2003 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02587 ,  H01L21/02598 ,  H01L21/02658 ,  H01L29/15 ,  H01L33/16 ,  H01L33/24

Abstract: A semiconductor device is disclosed. The semiconductor device includes a substrate comprising a groove. A buffer layer is formed on a surface of the groove. The buffer layer comprising at least one material chosen from AIN, GaN or Al x Ga 1-x N, where x is between zero and one. An epitaxially grown semiconductor material is disposed over the buffer layer, at least a portion of the epitaxially grown semiconductor material having a cubic crystalline phase structure. Methods of forming the semiconductor devices are also taught.

Abstract translation: 公开了一种半导体器件。 半导体器件包括包括沟槽的衬底。 在槽的表面上形成缓冲层。 所述缓冲层包含至少一种选自AIN，GaN或Al x Ga 1-x N的材料，其中x在0和1之间。 外延生长的半导体材料设置在缓冲层之上，至少部分外延生长的半导体材料具有立方晶相结构。 还教导了形成半导体器件的方法。

公开(公告)号：WO2011050165A2

公开(公告)日：2011-04-28

申请号：PCT/US2010/053553

申请日：2010-10-21

Applicant: STC.UNM ,  LEE, Seung-Chang ,  KRISHNA, Sanjay ,  BRUECK, Steven

Inventor： LEE, Seung-Chang ,  KRISHNA, Sanjay ,  BRUECK, Steven

IPC: G01J5/28

CPC classification number: H01L31/035236 ,  B82Y20/00 ,  G01J5/0853 ,  G02B6/1226 ,  H01L27/1446 ,  H01L31/03046 ,  H01L31/1035 ,  Y02E10/544 ,  Y02P70/521

Abstract: A plasmonic detector is described which can resonantly enhance the performance of infrared detectors. More specifically, the disclosure is directed to enhancing the quantum efficiency of semiconductor infrared detectors by increasing coupling to the incident radiation field as a result of resonant coupling to surface plasma waves supported by the metal/semiconductor interface, without impacting the dark current of the device, resulting in an improved detectivity over the surface plasma wave spectral bandwidth.

Abstract translation: 描述了能够共振地提高红外检测器的性能的等离子体激元检测器。 更具体地，本公开涉及通过与由金属/半导体界面支持的表面等离子体波共振耦合而增加与入射辐射场的耦合来增强半导体红外检测器的量子效率，而不影响器件的暗电流 ，导致在表面等离子体波谱带宽上检测率的提高。