公开(公告)号：EP1901430A3

公开(公告)日：2009-12-23

申请号：EP07114839.9

申请日：2007-08-23

Applicant: STMicroelectronics Pvt. Ltd.

Inventor： Srivastava, Ankit ,  Jandial, Sourav

IPC: H03K19/0185 ,  H03K3/356

CPC classification number: H03K19/018528 ,  H03K3/012 ,  H03K3/356165 ,  H03K3/356182

Abstract: The present invention provides a level shifter circuit capable of high frequency operations. The level shifter circuit utilizes a dynamic charge injection device, which diminishes a capacitive coupling effect between a gate and a drain of input NMOS devices, when the input signal switches from a high logic level to a low logic level. The dynamic charge injection device is incorporated at output nodes to provide initial thrust to the level shifter circuit, which triggers a positive regenerative feedback of cross-coupled pull up PMOS devices enabling a rapid transition and hence the high frequency operations.

公开(公告)号：EP1901430A2

公开(公告)日：2008-03-19

申请号：EP07114839.9

申请日：2007-08-23

Applicant: STMicroelectronics Pvt. Ltd.

Inventor： Srivastava, Ankit ,  Jandial, Sourav

IPC: H03K19/0185

CPC classification number: H03K19/018528 ,  H03K3/012 ,  H03K3/356165 ,  H03K3/356182

Abstract: The present invention provides a level shifter circuit capable of high frequency operations. The level shifter circuit utilizes a dynamic charge injection device, which diminishes a capacitive coupling effect between a gate and a drain of input NMOS devices, when the input signal switches from a high logic level to a low logic level. The dynamic charge injection device is incorporated at output nodes to provide initial thrust to the level shifter circuit, which triggers a positive regenerative feedback of cross-coupled pull up PMOS devices enabling a rapid transition and hence the high frequency operations.

Abstract translation: 本发明提供了一种能够进行高频操作的电平移位器电路。 当输入信号从高逻辑电平切换到低逻辑电平时，电平移位器电路利用动态电荷注入器件，其减小输入NMOS器件的栅极和漏极之间的电容耦合效应。 动态电荷注入器件集成在输出节点上，为电平转换器电路提供初始推力，触发交叉耦合上拉PMOS器件的正向再生反馈，从而实现快速转换，从而实现高频操作。