公开(公告)号：US20160076962A1

公开(公告)日：2016-03-17

申请号：US14950832

申请日：2015-11-24

Applicant: STMicroelectronics S.r.l.

Inventor： Lorenzo Baldo ,  Michele Vaiana ,  Mario Chiricosta ,  Mario Maiore ,  Paul Georges Marie Rose

IPC: G01L19/00 ,  G01L9/00 ,  G01K7/01

CPC classification number: G01L19/0092 ,  G01K7/01 ,  G01L9/0054 ,  G01L9/065

Abstract: A pressure sensor includes a body made of semiconductor material having a first type of conductivity and a pressure-sensitive structure having the first type of conductivity defining a suspended membrane. One or more piezoresistive elements having a second type of conductivity (P) are formed in the suspended membrane. The piezoresistive elements form, with the pressure-sensitive structure, respective junction diodes. A temperature sensing method includes: generating a first current between conduction terminals common to the junction diodes; detecting a first voltage value between the common conduction terminals when the first current is supplied; and correlating the detected first voltage value to a value of temperature of the diodes. The temperature value thus calculated can be used for correcting the voltage signal generated at output by the pressure sensor when the latter is operated for sensing an applied outside pressure which deforms the suspended membrane.

公开(公告)号：US09518886B2

公开(公告)日：2016-12-13

申请号：US14950832

申请日：2015-11-24

Applicant: STMicroelectronics S.r.l.

Inventor： Lorenzo Baldo ,  Michele Vaiana ,  Mario Chiricosta ,  Mario Maiore ,  Paul Georges Marie Rose

IPC: G01K11/00 ,  G01L19/00 ,  G01K7/01 ,  G01L9/00 ,  G01L9/06

CPC classification number: G01L19/0092 ,  G01K7/01 ,  G01L9/0054 ,  G01L9/065

Abstract: A pressure sensor includes a body made of semiconductor material having a first type of conductivity and a pressure-sensitive structure having the first type of conductivity defining a suspended membrane. One or more piezoresistive elements having a second type of conductivity (P) are formed in the suspended membrane. The piezoresistive elements form, with the pressure-sensitive structure, respective junction diodes. A temperature sensing method includes: generating a first current between conduction terminals common to the junction diodes; detecting a first voltage value between the common conduction terminals when the first current is supplied; and correlating the detected first voltage value to a value of temperature of the diodes. The temperature value thus calculated can be used for correcting the voltage signal generated at output by the pressure sensor when the latter is operated for sensing an applied outside pressure which deforms the suspended membrane.

Abstract translation: 压力传感器包括由具有第一类型导电性的半导体材料制成的主体和具有限定悬浮膜的第一类型导电性的压敏结构。 在悬浮膜中形成具有第二类导电性（P）的一个或多个压电元件。 压敏元件与压敏结构形成各自的结二极管。 温度检测方法包括：在连接二极管公共的导通端子之间产生第一电流; 当提供所述第一电流时，检测所述公共导通端子之间的第一电压值; 并将检测到的第一电压值与二极管的温度值相关联。 这样计算的温度值可用于校正当压力传感器输出时产生的电压信号，该压力传感器用于感测施加的使悬浮膜变形的外部压力。

公开(公告)号：US20130215931A1

公开(公告)日：2013-08-22

申请号：US13757146

申请日：2013-02-01

Applicant: STMicroelectronics S.r.l.

Inventor： Michele Vaiana ,  Mario Chiricosta ,  Mario Maiore ,  Lorenzo Baldo ,  Paul Georges Marie Rose

IPC: G01K7/01

CPC classification number: G01L19/0092 ,  G01K7/01 ,  G01L9/0054 ,  G01L9/065

Abstract: A pressure sensor includes a body made of semiconductor material having a first type of conductivity and a pressure-sensitive structure having the first type of conductivity defining a suspended membrane. One or more piezoresistive elements having a second type of conductivity (P) are formed in the suspended membrane. The piezoresistive elements form, with the pressure-sensitive structure, respective junction diodes. A temperature sensing method includes: generating a first current between conduction terminals common to the junction diodes; detecting a first voltage value between the common conduction terminals when the first current is supplied; and correlating the detected first voltage value to a value of temperature of the diodes. The temperature value thus calculated can be used for correcting the voltage signal generated at output by the pressure sensor when the latter is operated for sensing an applied outside pressure which deforms the suspended membrane.

Abstract translation: 压力传感器包括由具有第一类型导电性的半导体材料制成的主体和具有限定悬浮膜的第一类型导电性的压敏结构。 在悬浮膜中形成具有第二类导电性（P）的一个或多个压电元件。 压敏元件与压敏结构形成各自的结二极管。 温度检测方法包括：在连接二极管公共的导通端子之间产生第一电流; 当提供所述第一电流时，检测所述公共导通端子之间的第一电压值; 并将检测到的第一电压值与二极管的温度值相关联。 这样计算的温度值可用于校正当压力传感器输出时产生的电压信号，该压力传感器用于感测施加的使悬浮膜变形的外部压力。

公开(公告)号：US20190222203A1

公开(公告)日：2019-07-18

申请号：US16243455

申请日：2019-01-09

Applicant: STMicroelectronics S.r.l.

Inventor： Giovanni Carlo Tripoli ,  Cecilia Teresa Rita Gatti ,  Paul Georges Marie Rose ,  Roberto Faravelli

IPC: H03K3/03 ,  G05F1/577

CPC classification number: H03K3/0315 ,  G05F1/577 ,  H03K3/011 ,  H03K5/24

Abstract: An oscillator circuit including a ring oscillator and a reference current source is provided. The ring oscillator includes an odd number of inverter stages. Each inverter stage includes a first transistor having a first reference threshold that varies over temperature. The reference current source is configured to generate a plurality of currents, where a respective current is applied directly to the drain of a respective first transistor of a respective inverter stage. The reference current source includes a reference transistor that has a second reference threshold that varies over temperature; a resistor coupled between a gate and a source of the reference transistor; a second transistor having a source coupled to the gate of the reference transistor for generating a reference current that flows through the resistor to regulate a voltage of the resistor to the second threshold voltage; and a current mirror configured to generate the plurality of currents.

公开(公告)号：US09534974B2

公开(公告)日：2017-01-03

申请号：US13757146

申请日：2013-02-01

Applicant: STMicroelectronics S.r.l.

Inventor： Michele Vaiana ,  Mario Chiricosta ,  Mario Maiore ,  Lorenzo Baldo ,  Paul Georges Marie Rose

IPC: G01K7/00 ,  G01L19/00 ,  G01K7/01 ,  G01L9/00 ,  G01L9/06

CPC classification number: G01L19/0092 ,  G01K7/01 ,  G01L9/0054 ,  G01L9/065

Abstract: A pressure sensor includes a body made of semiconductor material having a first type of conductivity and a pressure-sensitive structure having the first type of conductivity defining a suspended membrane. One or more piezoresistive elements having a second type of conductivity (P) are formed in the suspended membrane. The piezoresistive elements form, with the pressure-sensitive structure, respective junction diodes. A temperature sensing method includes: generating a first current between conduction terminals common to the junction diodes; detecting a first voltage value between the common conduction terminals when the first current is supplied; and correlating the detected first voltage value to a value of temperature of the diodes. The temperature value thus calculated can be used for correcting the voltage signal generated at output by the pressure sensor when the latter is operated for sensing an applied outside pressure which deforms the suspended membrane.

Abstract translation: 压力传感器包括由具有第一类型导电性的半导体材料制成的主体和具有限定悬浮膜的第一类型导电性的压敏结构。 在悬浮膜中形成具有第二类导电性（P）的一个或多个压电元件。 压敏元件与压敏结构形成各自的结二极管。 温度检测方法包括：在连接二极管公共的导通端子之间产生第一电流; 当提供所述第一电流时，检测所述公共导通端子之间的第一电压值; 并将检测到的第一电压值与二极管的温度值相关联。 这样计算的温度值可用于校正当压力传感器输出时产生的电压信号，该压力传感器用于感测施加的使悬浮膜变形的外部压力。