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公开(公告)号：JP2000228087A
公开(公告)日：2000-08-15
申请号：JP2794099
申请日：1999-02-04
Applicant: UNITED MICROELECTRONICS CORP
Inventor： JO SHINKYU
IPC: G11C11/41
Abstract: PROBLEM TO BE SOLVED: To obtain a dual port random access memory(RAM) using a symmetrical layout in which performance is improved to increase recording density. SOLUTION: A dual port random access memory comprises four NMOS transistors NM11-14 and four PMOS transistors PM11-14. The NMOS transistors NM11-14 and the PMOS transistors PM11-14 both are used as a pass gate. In more detail, two NMOS transistors are used as a pass gate of one group of bit line, two PMOS transistors are used as a pass gate of another group of bit line.
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