公开(公告)号：MX9706312A

公开(公告)日：1997-11-29

申请号：MX9706312

申请日：1996-02-27

Applicant: ERICSSON INC

Inventor： ZHOU XUE-SONG

IPC: H03B5/02 ,  H03B1/04 ,  H03B5/12 ,  H03B5/18 ,  H03B05/18

Abstract: La presente invencion se refiere a un oscilador regulado por tension, de poco ruido y alta potencia (ORT), que elimina el amplificador de la etapa preamplificadora y el costoso filtro interetápico de onda tensoacustica en un transmisor como puede ser un radioteléfono celular. El ORT incluye un circuito resonante, una parte activa conectada al circuito resonante y una amplificador separador conectado a la parte activa, para aislar el ORT de una carga conectada al amplificador separador. La parte activa incluye por lo menos un transistor en una configuracion Colpitts; capacitancias conectadas en paralelo con capacitancias de union del transistor, cada capacitancia con un valor mayor que un valor de la capacitancia de union respectiva, con la cual se conecta en paralelo; y una resistencia para proporcionar realimentacion negativa a frecuencias bajas. Una segunda resistencia puede proporcionarse para reducir la ganancia de la parte activa cuando comienza la oscilacion. El amplificador separador es un amplificador lineal que incluye un transistor, y la parte activa y el amplificador separador puede esta conectados por una capacitancia para reducir el acoplamiento entre la parte activa y el amplificador separador.

公开(公告)号：EP0152547A3

公开(公告)日：1987-05-20

申请号：EP84113589

申请日：1984-11-10

Applicant: Blaupunkt-Werke GmbH

Inventor： Ohler, Michael, Dipl.-Ing.

IPC: H03B05/18

CPC classification number: H03B5/1847 ,  H03B2200/004 ,  H03B2200/0088 ,  H03B2201/0208 ,  H03B2202/03

Abstract: Oszillatoren für sehr hohe Frequenzen etwa zum Ein satz beim Satellitenfernsehen zeichnen sich durch einen großen Schaltungsaufwand aus. Um die erforderliche große Bandbreite überstreichen zu können, werden zudem um schaltbare Oszillatoren verwendet, wobei in jeder Schalt stellung jeweils nur ein Teil der gesamten Bandbreite durchgestimmt werden kann.
Die Erfindung ermöglicht demgegenüber einen Oszilla tor mit einem großen Durchstimmbereich, so daß auf eine Umschaltung verzichtet werden kann. Zudem ist nur ein geringer Schaltungsaufwand erforderlich.
Zu diesem Zweck wird ein im Resonanzkreis für die Abstimmung vorgesehener Doppelvaraktor durch eine rela tiv kurze Streifenleitung überbrückt, welche die Funktion einer Hubdehnungsspule besitzt. Der Resonanzkreis ist an den Emitter eines Transistors angeschlossen, während die Auskopplung am Kollektor erfolgt. Maßnahmen gegen para sitäre Schwingungen sind eine Kollektorstromzuführung in Form eines bedämpften Resonanzkreises sowie ein Reso nanzkreis in der Basiszuführung.

公开(公告)号：EP0202652A3

公开(公告)日：1988-12-07

申请号：EP86106840

申请日：1986-05-20

Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

Inventor： Mekata, Tsuyoshi ,  Saka, Hiroshi ,  Tanaka, Toshihide

IPC: H03B05/18

CPC classification number: H03B5/1876 ,  H03B5/1852 ,  H03B2200/0028

Abstract: A microwave oscillator to be usable with anyone of chip FET or MMIC FET or package FET, by configurating the oscillation circuit that resonance circuit (4+5,26) is connected to the gate (11), an end-grounded inductor (2) is connected to the drain (12) and the source (13) is connected to output terminal (10), stable microwave oscillation is made.

公开(公告)号：EP0164684A3

公开(公告)日：1988-04-20

申请号：EP85106912

申请日：1985-06-04

Applicant: SONY CORPORATION

Inventor： Murakami, Yoshikazu ,  Ito, Seigo ,  Yamada, Toshiro

IPC: H03B05/18 ,  H01P01/215

CPC classification number: H03B5/1888 ,  H01P1/215 ,  H03B5/1847 ,  H03B2201/0241

Abstract: A tuned oscillator is disclosed which comprises an active element (37), a resonator (35) electrically connected to the active element and made of a magnetic material using ferromagnetic resonance phenomenon, and a magnetic circuit for applying a magnetic field to the resonator. The resonator is made of an YIG (yttrium, iron and garnet) thin film magnetic resonance element formed by a thin film forming technique and utilizes an uniform mode ferro-magnetic resonance in the YIG thin film, and operating under the application of magnetic field of the magnetic circuit.

公开(公告)号：EP0133799A3

公开(公告)日：1987-12-09

申请号：EP84305262

申请日：1984-08-02

Applicant: Matsushita Electric Industrial Co., Ltd.

Inventor： Kane, Johji

IPC: H03J03/18 ,  H03B05/18 ,  H03F03/60 ,  H03D09/06 ,  H03L07/18 ,  H03J01/00 ,  H03H05/02

CPC classification number: H03B5/1841 ,  H03B2201/0208 ,  H03D9/06 ,  H03F3/60 ,  H03H5/02 ,  H03J1/00 ,  H03J3/185 ,  H03L7/099

Abstract: Atuning system for use in communications of an integral construction and stable in operation comprising a dielectric; a pair of first and second electrodes (29,30) confronting each other with said dielectric interposed therebetween, each of said first and second electrodes having at least one bent portion to present primarily a lumped-constant inductance and having a desired equivalent electrical length; said first and second electrodes having ground or common terminals located out of mutually confronting positions so that voltage signals induced by mutual induction between the electrodes will be opposite in phase with respect to each other, thereby producing a parasitic distributed-constant capacitance due to a potential difference between the electrodes and a dielectric constant of the dielectric; one of said first and second electrodes having a first terminal (27) at a desired position thereof, the electrodes forming a two-terminal circuit network having the first terminal with the ground or common terminals serving as a second terminal, the two terminal circuit network forming an equivalent parallel resonant circuit composed of a lumped-constant inductance formed by said one electrode and a parasitic distributed-constant capacitance between the first and second electrodes; and a feedback amplifier (26) connected to said parallel resonant circuit for generating an inherent voltage vibration to produce a tuning oscillating signal.

公开(公告)号：EP0014115A3

公开(公告)日：1980-08-20

申请号：EP80400033

申请日：1980-01-11

Applicant: THOMSON-CSF

Inventor： Castera, Jean-Paul ,  Dupont, Jean-Marie

IPC: H03B05/18 ,  H03H02/00

CPC classification number: H03H2/001 ,  H03B5/1882 ,  H03B2201/0241 ,  H03B2202/017 ,  H03B2202/05

公开(公告)号：EP0182664A3

公开(公告)日：1987-12-02

申请号：EP85308458

申请日：1985-11-20

Applicant: TEKTRONIX, INC.

Inventor： Lockwood, Larry R.

IPC: H03B05/18

CPC classification number: H03B5/1805 ,  H03B2202/012 ,  H03B2202/027

Abstract: A low noise oscillator. A circuit configuration is provided for reducing noise sidebands in the output of an oscillator due to modulation of the oscillation signal by characteristic noise produced by the amplifying element. A gallium arsenide field-effect transistor that produces characteristic noise is operated as a linear amplifier. Positive feedback to the input of the amplifier is provided by a resonator. The amplitude of the oscillation signal is limited by a distinct limiting circuit in the feedback loop, the input to which is isolated from the amplifier by a high pass filter, thereby divorcing the non-linear limiting function of the oscillator from the amplifying function where noise is generated.

公开(公告)号：EP0090414A3

公开(公告)日：1985-05-22

申请号：EP83103122

申请日：1983-03-29

Applicant: NEC CORPORATION

Inventor： Mizumura, Motoo ,  Wada, Kenzo

IPC: H03B05/18

CPC classification number: H03B5/1876 ,  H03B5/1829 ,  H03B5/1852 ,  H03B5/187 ,  H03B19/14 ,  H03B2200/007 ,  H03B2202/086

Abstract: The transistorized microwave oscillator comprises an oscillating means (100) with at least a transistor (4) for oscillation and feedback means (7, 17 to 19), for generating a fundamental oscillating frequency and its harmonic components. Furthermore, there is provided a cutoff waveguide (21) connected to said oscillating means (100) for cutting off said fundamental oscillating frequency and undesired lower-order harmonics to provide a desired higher-order harmonic. A part of said feedback means (7, 17 to 19) comprises means for coupling said oscillating means (100) to said cutoff waveguide (21). This microwave transistor oscillator is simply structured and its electrical characteristics are stable (Figs. 3A and 3B).

公开(公告)号：WO1998052276A1

公开(公告)日：1998-11-19

申请号：PCT/US1997023190

申请日：1997-12-12

Applicant: VERTICOM, INC.

Inventor： VERTICOM, INC. ,  PARROTT, Ronald, A.

IPC: H03B05/18

CPC classification number: H03B5/1888

Abstract: A multi-octave ferrite oscillator topology is disclosed that utilizes transformer coupling to provide the proper phase shift in the feedback loop. In a specific embodiment, a 10 mil YIG sphere is loosely coupled to a 20 mil input and output loops, both of which are connected to a GaAs integrated circuit that includes a Darlington pair of bipolar transistors. The Darlington provides high gain, high output power, and low parasitic reactance up to about 10 GHz. A resistor bridge across the base of the input transistor of the Darlington pair insures a substantially real input impedance over a wide bandwith.

Abstract translation: 公开了一种多倍频程的铁氧体振荡器拓扑，利用变压器耦合在反馈回路中提供适当的相移。 在一个具体实施例中，10密耳YIG球松散地耦合到20密耳的输入和输出环路，两者都连接到包括达林顿双极晶体管的GaAs集成电路。 达林顿提供高达10 GHz的高增益，高输出功率和低寄生电抗。 位于达林顿对的输入晶体管基极之间的电阻桥确保了宽频带上的基本上实际的输入阻抗。

公开(公告)号：WO1990012450A1

公开(公告)日：1990-10-18

申请号：PCT/JP1990000419

申请日：1990-03-28

Applicant: KYOCERA CORPORATION ,  NAKAMOTO, Yasuhiro ,  UEMURA, Hiroki

Inventor： KYOCERA CORPORATION

IPC: H03B05/18

CPC classification number: H01P7/082 ,  H03B5/1847 ,  H03B2200/004 ,  H03B2201/014 ,  H03B2201/0208

Abstract: In order to reduce the size of a microstrip line (1) and to improve the Q-value, the length and width of the microstrip line (1) in the oscillator are greatly decreased. Further, the resonance frequency which would be increased by the reduction in the size of the microstrip line (1) is not increased by virtue of the addition of a capacitance (Cx) connected to one end of the microstrip line (1) to become close to the oscillation frequency of the oscillator. This small sized microstrip (1) renders the size of the oscillation circuit small and gives the characteristics which are equal to those of a dielectric coaxial resonance element.

Abstract translation: 为了减小微带线（1）的尺寸并提高Q值，振荡器中微带线（1）的长度和宽度大大降低。 此外，由于通过添加与微带线（1）的一端连接的电容（Cx）而使微带线（1）的尺寸减小而增加的共振频率不会增加，从而变得接近 到振荡器的振荡频率。 这种小尺寸的微带线（1）使得振荡电路的尺寸较小，并且给出与介电同轴共振元件相同的特性。