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公开(公告)号：US20230357521A1
公开(公告)日：2023-11-09
申请号：US18041164
申请日：2021-08-05
Inventor： Aurélien Auger , Jérémie Auvergniot , Jérôme Delmas , Isabelle Rougeaux
CPC classification number: C08J7/065 , C08J7/16 , C08J2377/02
Abstract: A process for chemically modifying a polymeric part in order to provide it with flame retardancy properties or to enhance the properties, the process comprising a step of reacting at least one polymeric part comprising at least one polymer of which the reactive groups comprise amine groups and/or hydroxyl groups with a flame retardant compound comprising at least one group that reacts, by nucleophilic substitution or nucleophilic addition, with some or all of the amine groups and/or hydroxyl groups of the polymer or polymers, the reaction being carried out with the compound in gaseous form.
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公开(公告)号：US20230356164A1
公开(公告)日：2023-11-09
申请号：US18246233
申请日：2021-09-22
Inventor： Albin Chaise , Alain Bengaouer , Frédéric Ducros
CPC classification number: B01J8/065 , B01J8/009 , B01J8/0085 , B01J2208/0092
Abstract: A tubular reactor comprises a catalytic powder bed confined in an annular space delimited by an inner wall and an outer wall, the insert comprises a distribution chamber and a collection chamber, separated by at least one first partition wall, the distribution chamber comprising distribution compartments separated from one another by second partition walls, each distribution compartment and the collection chamber comprising, respectively, an intake opening and a discharge opening, the inner wall comprises distributing openings and a collecting opening, each distributing opening enabling the distribution of a gas towards the annular space, and the collecting opening enabling the collection of the gas distributed in the annular space by the collection chamber.
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公开(公告)号：US20230345805A1
公开(公告)日：2023-10-26
申请号：US18305042
申请日：2023-04-21
Inventor： Matthieu MANCEAU , Noëlla LEMAITRE , Stéphane CROS , Mathilde FIEVEZ
CPC classification number: H10K71/15 , C23C18/02 , H01G9/0029 , H01G9/20 , H10K30/50 , H10K85/6572
Abstract: A method for manufacturing a multi-cation perovskite layer, including: a) supply of a substrate having a deposition face, b) deposition of a precursor solution including precursors comprising CsX, FAY, PbZ2, with X, Y and Z = I, Br, and an FAC1 additive, the molar ratio of cesium to lead is between approximately 4 % and 22%, the molar ratio of FAC1 relative to lead between 0.1% and 5%, and the perovskite layer has an empirical formula of the type CsxFA(1-x+w)Pb(IyBr(1-y))3 with x between 0.04 and 0.22, y between 0 and 1 and w between 0.001 and 0.05, c) sweeping of the wet film by an inert gas to crystallize the perovskite layer, and heat treatment so that the deposition face has a temperature ranging from about 25° C. to 80° C. C at least during step b).
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公开(公告)号：US11792547B2
公开(公告)日：2023-10-17
申请号：US17869525
申请日：2022-07-20
Inventor： Josep Segura Puchades
CPC classification number: H04N25/75 , H04N25/767 , H04N25/77
Abstract: An event-driven sensor including: a pixel array; a column readout circuit coupled to column output lines of the pixel array, the column readout circuit including a plurality of column register cells; and a row readout circuit including a readout memory having a storage location corresponding to each pixel of the pixel array, the readout memory having sets of one or more row lines for writing to rows of memory locations of the readout memory, wherein each row output line of the pixel array is coupled, via a corresponding row line control circuit, to a corresponding one of the sets of one or more row lines of the readout memory.
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公开(公告)号：US11780008B2
公开(公告)日：2023-10-10
申请号：US16647785
申请日：2018-09-14
Inventor： Alain Jaouen , Denis Autissier
CPC classification number: B22F3/15 , B30B11/002 , B22F3/24 , B22F2003/153 , B22F2998/10 , B22F2999/00 , B29C35/16 , B30B15/28
Abstract: A backup cooling device intended for a hot isostatic press, the press comprising a compression chamber, a tank containing a gas and a first gas flow circuit for the gas to flow between the gas tank and the compression chamber. The backup cooling device comprises a tank containing a coolant equipped with a first heat exchanger for exchanging heat between the gas and the coolant, a coolant flow circuit forming a closed loop including the tank and a cooling circuit arranged around the compression chamber, a second gas flow circuit for the gas, extending from a connecting valve connecting it to the first gas flow circuit, and including the first heat exchanger, a control module (CMD) suitable for controlling the connecting valve so as to open it in the event of a malfunction of the hot isostatic press, and otherwise to close it.
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Patent Agency Ranking
公开(公告)号：US20230271160A1
公开(公告)日：2023-08-31
申请号：US18006808
申请日：2021-07-29
Inventor： Matthieu Hamel , Guillaume Bertrand , Benoit Sabot , Vincent Villemot
CPC classification number: B01J20/3085 , B01J20/226 , B01J20/28064 , B01J20/28066 , G01T1/2026
Abstract: A method of checking the storage and the radioactive activity of a radioactive gas adsorbed by a porous material having scintillation properties, which comprises: (a) putting the porous material in place in an enclosure, (b) performing circulation of the radioactive gas in the enclosure, (c) monitoring the adsorption of the radioactive gas by monitoring the scintillation of the porous material, up to an adsorption level, (d) interrupting the radioactive gas circulation in the enclosure when the adsorption level is attained, (e) placing the enclosure under a vacuum, and (f) monitoring the radioactive activity of the radioactive gas adsorbed by the porous material at the end of step (c) by monitoring the scintillation of the porous material. The porous material comprises metal organic frameworks formed of inorganic sub-units constituted by Zn4O and an organic ligand.
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公开(公告)号：US11715710B2
公开(公告)日：2023-08-01
申请号：US17320310
申请日：2021-05-14
Inventor： Emilie Bourjot , Amandine Jouve , Frank Fournel , Christophe Dubarry
IPC: H01L23/00
CPC classification number: H01L24/03 , H01L24/05 , H01L24/08 , H01L24/32 , H01L24/92 , H01L24/06 , H01L24/80 , H01L24/83 , H01L2224/0392 , H01L2224/03845 , H01L2224/05016 , H01L2224/05082 , H01L2224/05562 , H01L2224/05573 , H01L2224/06517 , H01L2224/08145 , H01L2224/32145 , H01L2224/80895 , H01L2224/83896 , H01L2224/9211
Abstract: A method of treatment of an electronic circuit including at a location at least one electrically-conductive test pad having a first exposed surface. The method includes the at least partial etching of the test pad from the first surface, and the forming on the electronic circuit of an interconnection level covering said location and including, on the side opposite to said location, a second planar surface adapted for the performing of a hybrid molecular bonding.
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公开(公告)号：US20230207515A1
公开(公告)日：2023-06-29
申请号：US18087538
申请日：2022-12-22
Inventor： Frank Fournel , Christophe Morales , Loïc Sanchez , Brigitte Montmayeul
IPC: H01L23/00
CPC classification number: H01L24/80 , H01L24/08 , H01L2224/08245 , H01L2224/80004 , H01L2224/80085 , H01L2224/80874 , H01L2224/80895 , H01L2224/80986 , H01L2924/37
Abstract: A method of preparation of a first surface of an electronic component, the first surface being intended to be bonded to another electronic component by a direct bonding and the first surface having previously been submitted to a surface treatment in an atmosphere including nitrogen, for example, a treatment in a nitrogen plasma or an ozone UV treatment, the preparation method including: placing into contact the first surface with an aqueous solution including at least 90% water, for a contacting duration longer than or equal to 30 minutes; and then drying the first surface.
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公开(公告)号：US20230198515A1
公开(公告)日：2023-06-22
申请号：US18067815
申请日：2022-12-19
Inventor： Johan DELAINE
IPC: H03K17/0812 , H03K17/16
CPC classification number: H03K17/08122 , H03K17/162
Abstract: A switch including a transistor to be protected, and a Miller effect protection unit including a protection transistor, the drain of the protection transistor being connected to the gate of the transistor to be protected, the source of the protection transistor being connected to the source of the transistor to be protected, a linking circuit, the linking circuit being a high-pass filter arranged between the gate of the protection transistor and the drain of the transistor to be protected, and a control circuit interposed between the gate of the protection transistor and the source of the transistor to be protected.
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公开(公告)号：US11683024B2
公开(公告)日：2023-06-20
申请号：US17121480
申请日：2020-12-14
Inventor： Guillaume Lefevre , Gaëtan Perez , Guillaume Piquet-Boisson
IPC: H03K3/012
CPC classification number: H03K3/012
Abstract: A method of controlling a switch, including: a) applying a control signal to a control terminal of the switch, said control signal exhibiting at least one first switching between a switch turn-on control state and a switch turn-off control state; and b) applying a switch turn-off potential on said control terminal after a first delay starting at said first switching, the first delay being greater than the turn-off time.
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