TOP GATE THIN FILM TRANSISTOR GAS SENSOR
    92.
    发明申请

    公开(公告)号:WO2020021251A1

    公开(公告)日:2020-01-30

    申请号:PCT/GB2019/052060

    申请日:2019-07-23

    Abstract: A top gate thin film transistor gas sensor for detecting or measuring a concentration of a target gas. The gas sensor is configured so that the target gas can pass through the top gate and interact with a semiconducting layer of the gas sensor. The top gate may not cover a channel of the semiconducting layer disposed beneath the top gate so that the target gas may communicate with the channel without impedance by the top gate. The top gate may be patterned with channels through which the target gas may pass through the top gate to the channel in the semiconducting layer. The top gate may be permeable to the target gas allowing passage of the target gas to the channel. A substrate on which the semiconducting layer is formed may be permeable to the target gas allowing the target gas to communicate with the channel.

    COMPOUND
    94.
    发明申请
    COMPOUND 审中-公开

    公开(公告)号:WO2019122900A3

    公开(公告)日:2019-06-27

    申请号:PCT/GB2018/053722

    申请日:2018-12-20

    Abstract: Compound A compound of formula (I): (I) wherein R 1 and R 2 are each independently a linear, branched or cyclic C 1-20 alkyl group; and Ar 1 and Ar 2 are each independently an aromatic or heteroaromatic group which is unsubstituted or substituted with one or more substituents. The compound may be used in n-doping of an organic semiconductor. Such an n-doped organic semiconductor may be used in an organic electronic device, for example an electron injection layer of an organic light-emitting device.

    COMPOUND
    95.
    发明申请
    COMPOUND 审中-公开

    公开(公告)号:WO2019122900A2

    公开(公告)日:2019-06-27

    申请号:PCT/GB2018/053722

    申请日:2018-12-20

    CPC classification number: H01L51/005 H01L51/0059 H01L51/5092

    Abstract: Compound A compound of formula (I): (I) wherein R 1 and R 2 are each independently a linear, branched or cyclic C 1-20 alkyl group; and Ar 1 and Ar 2 are each independently an aromatic or heteroaromatic group which is unsubstituted or substituted with one or more substituents. The compound may be used in n-doping of an organic semiconductor. Such an n-doped organic semiconductor may be used in an organic electronic device, for example an electron injection layer of an organic light-emitting device.

    COMPOUNDS FOR USE IN ORGANIC ELECTRONIC DEVICES

    公开(公告)号:WO2018229491A1

    公开(公告)日:2018-12-20

    申请号:PCT/GB2018/051634

    申请日:2018-06-14

    CPC classification number: C07D471/14

    Abstract: A compound of formula (I): (Formula (I)) wherein Ar 1 , Ar 2 and Ar 3 independently in each occurrence is a C 6-20 aryl group or a 5-20 membered heteroaryl group which is unsubstituted or substituted with one or more substituents; X 1 , X 2 and X 3 in each occurrence is independently a direct bond or a group of formula –C(R 1 ) 2 - wherein R 1 in each occurrence is independently H or a substituent. The compound of formula (I) may be used to form an n-dopant for doping an organic semiconductor. A film formed by such n-doping may be used in an organic electronic device, for example an electron injection layer of an organic light-emitting device.

    ORGANIC LIGHT-EMITTING DIODE DEVICE WITH PIXEL DEFINITION LAYER

    公开(公告)号:WO2018229488A1

    公开(公告)日:2018-12-20

    申请号:PCT/GB2018/051627

    申请日:2018-06-14

    CPC classification number: H01L27/3239 H01L27/3283

    Abstract: Organic light-emitting diode device. An organic light-emitting diode device includes a layer structure. The layer structure includes a transparent or translucent substrate (11). The layer structure also includes a transparent or translucent anode layer (12) disposed on the transparent or translucent substrate (11) and including one or more first electrodes. The layer structure also includes a hole-injection layer (13) disposed over the anode layer (12). The layer structure also includes a light-emitting layer (15) disposed over the hole-injection layer (13). The layer structure also includes a cathode layer (18) disposed over the light-emitting layer (15) and comprising one or more second electrodes. The layer structure also includes a pixel definition layer (17) disposed within the layer structure between the hole-injection layer (13) and the cathode layer (18), the pixel definition layer (17) formed of a printed organic insulator and comprising one or more apertures defining one or more corresponding pixel areas.

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