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    Control of contact resistance in quantum well intermixed devices
    91.
    发明授权
    Control of contact resistance in quantum well intermixed devices 有权
    量子阱混合器件中接触电阻的控制

    公开(公告)号：US07138285B2

    公开(公告)日：2006-11-21

    申请号：US10515198

    申请日：2003-05-21

    Applicant: Stephen Najda ,  Stewart Duncan McDougall ,  Xuefeng Liu

    Inventor： Stephen Najda ,  Stewart Duncan McDougall ,  Xuefeng Liu

    IPC: H01L21/00

    CPC classification number: B82Y20/00 ,  H01L21/182 ,  H01L33/005 ,  H01S5/3414 ,  H01S5/343 ,  H01S5/34313

    Abstract: A method of performing quantum well intermixing in a semiconductor device structure uses a sacrificial part of a cap layer, that is removed after QWI processing, to restore the cap surface to a condition in which high performance contacts are still possible. The method includes: a) forming a layered quantum well structure including a doped cap layer; b) forming an etch stop layer over said cap layer; c) forming a sacrificial layer over said etch stop layer, said etch stop layer having a substantially lower etch rate than said sacrificial layer when exposed to predetermined etch conditions; d) carrying out a quantum well intermixing process on the device structure, which process induces significant damage to at least a portion of the sacrificial layer; e) removing the sacrificial layer in at least a contact region of the device using an etch procedure selective against the etch stop layer to expose said etch stop layer in the contact region; and f) forming a contact over the layered quantum well structure in at least said contact region.

    Abstract translation: 在半导体器件结构中进行量子阱混合的方法使用在QWI处理之后去除的覆盖层的牺牲部分，以将盖表面恢复到仍然可能存在高性能接触的状态。 该方法包括：a）形成包括掺杂帽层的层状量子阱结构; b）在所述盖层上形成蚀刻停止层; c）在所述蚀刻停止层上形成牺牲层，当暴露于预定的蚀刻条件时，所述蚀刻停止层具有比所述牺牲层显着更低的蚀刻速率; d）对器件结构进行量子阱混合过程，该过程对牺牲层的至少一部分引起显着的损伤; e）使用对所述蚀刻停止层选择性的蚀刻程序在所述器件的至少接触区域中去除所述牺牲层，以暴露所述接触区域中的所述蚀刻停止层; 以及f）在至少所述接触区域中在层状量子阱结构上形成接触。

    Method of manufacturing optical devices and related improvements
    94.
    发明授权
    Method of manufacturing optical devices and related improvements 有权
    制造光学器件的方法及相关改进

    公开(公告)号：US06989286B2

    公开(公告)日：2006-01-24

    申请号：US10466972

    申请日：2002-01-23

    Applicant: Craig James Hamilton ,  Olek Peter Kowalski ,  John Haig Marsh ,  Stewart Duncan McDougall

    Inventor： Craig James Hamilton ,  Olek Peter Kowalski ,  John Haig Marsh ,  Stewart Duncan McDougall

    IPC: H01L21/20

    CPC classification number: B82Y20/00 ,  H01S5/026 ,  H01S5/0265 ,  H01S5/3413 ,  H01S5/3414

    Abstract: There is disclosed a method of manufacturing of optical devices, for example, semiconductor optoelectronic devices such as laser diodes, optical modulators, optical amplifiers, optical switches, and the like. There is further disclosed Optoelectronic Integrated Circuits (OEICs) and Photonic Integrated Circuits (PICs) including such devices. According to the present invention there is provided a method of manufacturing an optical device (40), a device body portion (15) from which the device (40) is to be made including a Quantum Well Intermixing (QWI) structure (30), the method including the step of plasma etching at least part of a surface of the device body portion (5) prior to depositing a dielectric layer (51) thereon so as to introduce structural defects at least into a portion (53) of the device body portion (5) adjacent the dielectric layer (51). The structural defects substanially comprise “point” defects.

    Abstract translation: 公开了一种制造光学器件的方法，例如半导体光电器件，例如激光二极管，光调制器，光放大器，光开关等。 还公开了包括这种装置的光电集成电路（OEIC）和光子集成电路（PIC）。 根据本发明，提供了一种制造光学装置（40）的方法，装置本体部分（15），其中将要制造装置（40）包括量子阱混合（QWI）结构（30）， 该方法包括在其上沉积介电层（51）之前等离子体蚀刻器件主体部分（5）的表面的至少一部分的步骤，以至少将结构缺陷引入到器件本体的部分（53）中 邻近电介质层（51）的部分（5）。 结构缺陷本质上包含“点”缺陷。

    Oral cleansing product
    95.
    发明授权
    Oral cleansing product 失效
    口腔清洁用品

    公开(公告)号：US06685918B1

    公开(公告)日：2004-02-03

    申请号：US10111178

    申请日：2002-07-12

    Applicant: Kevin John Wills ,  Iain Stewart Duncan

    Inventor： Kevin John Wills ,  Iain Stewart Duncan

    IPC: A61K716

    CPC classification number: A61K8/26 ,  A61Q11/00

    Abstract: There is disclosed an oral cleansing product comprising as an abrasive an alumnina in the form of particles having d10 below 3.5 &mgr;m, d50 below 1.0 &mgr;m, and a specific surface area below 6 m2/g.

    Abstract translation: 公开了一种口腔清洁产品，其包含具有d10低于3.5μm，d50低于1.0μm，比表面积低于6m 2 / g的颗粒形式的研磨剂。

    Pallet dismantling apparatus
    96.
    发明授权
    Pallet dismantling apparatus 有权

    公开(公告)号：US10259108B2

    公开(公告)日：2019-04-16

    申请号：US14657037

    申请日：2015-03-13

    Applicant: Stewart Duncan ,  Richard Fongeallaz

    Inventor： Stewart Duncan ,  Richard Fongeallaz

    IPC: B66F15/00 ,  B25G1/06 ,  B25B27/02 ,  B25B27/04

    Abstract: An apparatus is disclosed for dismantling a pallet comprising an elongated handle having a free end and an attachment end, wherein the attachment end is coupled with a crossbar having a horizontal axis extending perpendicular to the plane of the handle. The apparatus also has one or a plurality of blades extending rigidly forward in adjustable communication with the crossbar via a notched aperture in each blade for receiving the crossbar, wherein each blade further comprises a lower curved portion, and an upper portion for engaging a board of a pallet, at least one wheel rotatably coupled with said lower curved portion, and means for clamping the blades to the crossbar.

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