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    Detecting device for the midpoint voltage of transistor half bridge circuit
    92.
    发明专利
    Detecting device for the midpoint voltage of transistor half bridge circuit 审中-公开
    检测晶体管半桥电路中点电压的装置

    公开(公告)号：JP2011078305A

    公开(公告)日：2011-04-14

    申请号：JP2010218247

    申请日：2010-09-29

    Applicant: Stmicroelectronics Srl ,  エスティーマイクロエレクトロニクス エス.アール.エル.STMicroelectronics S.r.l.

    Inventor： SANTORO CHRISTIAN LEONE ,  NOVELLI ALDO VITTORIO ,  ADRAGNA CLAUDIO

    IPC: H02M1/00

    CPC classification number: H02M3/337 ,  H02M1/083 ,  H02M1/38 ,  H02M2001/0058 ,  Y02B70/1491

    Abstract: PROBLEM TO BE SOLVED: To provide a detecting device for the midpoint voltage of a transistor half bridge circuit.
    SOLUTION: The half bridge circuit composed of a first transistor M1 and a second transistor M2 is driven so that the midpoint voltage undergoes transition from a low voltage value to a high voltage value and vice versa and is adapted to form a low impedance node for current signals Isink, Isource circulating in a capacitor. The detecting device is adapted to detect the current signals Isink, Isource, and has a detection means 10 which is adapted to output at least one first signal HL_comm or LH_comm indicating the transition from the low value to the high value or from the high value to the low value of the midpoint voltage according to the current signal.
    COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种用于晶体管半桥电路的中点电压的检测装置。 解决方案：驱动由第一晶体管M1和第二晶体管M2组成的半桥电路，使得中点电压从低电压值转变为高电压值，反之亦然，并适于形成低阻抗 节点为电流信号Isink，Isource循环在电容器中。 该检测装置适于检测当前信号Isink，Isource，并且具有检测装置10，该检测装置适于输出至少一个第一信号HL_comm或LH_comm，该第一信号HL_comm或LH_comm指示从低值到高值或从高值转换到高值到 根据当前信号的中点电压的低值。 版权所有（C）2011，JPO＆INPIT

    Self-repair method for nonvolatile memory device with erasing/programming failure, and nonvolatile memory device therefor
    95.
    发明专利
    Self-repair method for nonvolatile memory device with erasing/programming failure, and nonvolatile memory device therefor 有权
    具有擦除/编程故障的非易失性存储器件的自修复方法及其非易失性存储器件

    公开(公告)号：JP2010165456A

    公开(公告)日：2010-07-29

    申请号：JP2010106014

    申请日：2010-04-30

    Applicant: Stmicroelectronics Srl ,  エスティーマイクロエレクトロニクス エス.アール.エル.STMicroelectronics S.r.l.

    Inventor： MICHELONI RINO ,  LOSAVIO ALDO

    IPC: G11C16/06 ,  G11C29/12 ,  G11C29/00 ,  G11C29/04 ,  G11C29/44

    CPC classification number: G11C29/82 ,  G11C29/846

    Abstract: PROBLEM TO BE SOLVED: To internally identify and correct a defective part in the memory device, increase service life thereof and improve manufacturing yield. SOLUTION: The memory device (20) has: a memory block (1) formed by a plurality of standard sectors (15) and a redundancy portion (2); a control circuit (3) which controls programming and erasing of the data of the memory cells; and a correctness verifying circuit (7) for the data stored in the memory cells. The correctness verifying circuit (7) is enabled by the control circuit (3) and generates an incorrect-datum signal in the event of detection of at least one non-functioning cell. The control circuit moreover activates redundancy, enables the redundancy portion (2) and stores redundancy data in a redundancy-memory stage (5b) in the presence of an incorrect datum. Various solutions are presented that implement column, row and sector redundancy, both in case of erasing and programming. COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题：为了内部识别和纠正存储器件中的缺陷部件，增加其使用寿命并提高制造成品率。 存储装置（20）具有：由多个标准扇区（15）和冗余部分（2）形成的存储块（1）。 控制电路（3），其控制存储器单元的数据的编程和擦除; 以及用于存储在存储单元中的数据的正确性验证电路（7）。 正确性验证电路（7）由控制电路（3）使能，并且在检测至少一个非功能单元的情况下产生不正确的基准信号。 此外，控制电路激活冗余，使得冗余部分（2）能够在存在不正确的数据的情况下将冗余数据存储在冗余存储器级（5b）中。 提出了实现列，行和扇区冗余的各种解决方案，无论在擦除和编程的情况下。 版权所有（C）2010，JPO＆INPIT

    Non-volatile memory with ovonic threshold switch
    96.
    发明专利
    Non-volatile memory with ovonic threshold switch 审中-公开
    具有OVONIC阈值开关的非易失性存储器

    公开(公告)号：JP2010157316A

    公开(公告)日：2010-07-15

    申请号：JP2010000255

    申请日：2010-01-04

    Applicant: Stmicroelectronics Srl ,  エスティーマイクロエレクトロニクス エス.アール.エル.STMicroelectronics S.r.l.

    Inventor： KAU DERCHANG ,  ATWOOD GREG ,  SPADINI GIANPAOLO

    IPC: G11C13/00 ,  H01L27/10 ,  H01L27/105 ,  H01L45/00

    CPC classification number: G11C8/14 ,  G11C13/0004 ,  G11C13/0028 ,  G11C13/003 ,  G11C2213/76

    Abstract: PROBLEM TO BE SOLVED: To prevent the occurrence of a current spike flowing across the storage element of a memory cell having an OTS selector during the selection of the memory cell. SOLUTION: A memory device 100 includes a plurality of memory cells 110 being arranged in a matrix 105 having a plurality of rows and a plurality of columns. Each memory cell 110 includes the storage element P and a selector S for selecting the storage element P. The memory device 100 also includes a plurality of array lines having a plurality of row lines BL each one for selecting the memory cell P of a corresponding row and a plurality of column lines WL each one for selecting the memory cell P of a corresponding column. The memory device further includes for each line among the row lines BL and/or the column lines WL a respective set of local lines LWL each one for selecting a group of memory cells P of the corresponding line, and also a respective set of selection elements each one for selecting the corresponding local line LWL in response to the selection of the respective lines. COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题：为了防止在选择存储单元期间流过具有OTS选择器的存储单元的存储元件的电流尖峰的出现。 解决方案：存储器件100包括多个存储单元110，其布置在具有多行和多列的矩阵105中。 每个存储单元110包括存储元件P和用于选择存储元件P的选择器S.存储器件100还包括具有多条行线BL的多条阵列线，每条阵列线用于选择相应行的存储单元P 以及多个列线WL，每一列用于选择相应列的存储单元P. 存储装置还包括行行BL和/或列线WL中的每一行，各自的一组本地线LWL用于选择相应行的一组存储单元P，以及相应的选择元素组 每个用于响应于各行的选择来选择对应的本地行LWL。 版权所有（C）2010，JPO＆INPIT

    Microelectromechanical gyroscope with rotary driving motion and improved electrical properties
    97.
    发明专利
    Microelectromechanical gyroscope with rotary driving motion and improved electrical properties 有权
    具有旋转驱动运动的微电子陀螺仪和改进的电气特性

    公开(公告)号：JP2010151808A

    公开(公告)日：2010-07-08

    申请号：JP2009268139

    申请日：2009-11-25

    Applicant: Stmicroelectronics Srl ,  エスティーマイクロエレクトロニクス エス.アール.エル.STMicroelectronics S.r.l.

    Inventor： CORONATO LUCA ,  CAZZANIGA GABRIELE ,  ZERBINI SARAH

    IPC: G01C19/56

    CPC classification number: G01C19/56 ,  G01C19/5712 ,  Y10T29/49002

    Abstract: PROBLEM TO BE SOLVED: To provide a biaxial or triaxial gyroscope satisfactory in sensitivity. SOLUTION: An integrated microelectromechanical structure 30 includes: a die 2, having a substrate 2a and a frame 2b, defining inside it a detection region 2c and having a first side extending along a first horizontal axis x; a driving mass 3, anchored to the substrate 2a, set in the detection region 2c, and rotatable in a plane xy with an actuation movement about a vertical axis z; and first and second pairs 16a', 16b' and 16c', 16d' of sensing masses, suspended inside the driving mass 3 via elastic supporting elements 20 so as to be fixed with respect thereto and so as to perform a detection movement of rotation out of the plane xy in response to a first angular velocity; wherein the sensing masses of the first pair 16a', 16b' and the sensing masses of the second pair 16c', 16d' are aligned in respective directions, having non-zero inclinations of opposite sign with respect to the first horizontal axis x. COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题：提供令人满意的灵敏度的双轴或三轴陀螺仪。 集成微电子机械结构30包括：具有基板2a和框架2b的模具2，在其内部限定有检测区域2c，并且具有沿第一水平轴线x延伸的第一侧面; 固定在基板2a上的驱动质量块3，其设置在检测区域2c中，并且可以在平面xy中以围绕垂直轴线z的致动运动旋转; 以及感测质量的第一和第二对16a'，16b'和16c'，16d'，经由弹性支撑元件20悬挂在驱动块3内部，以便相对于其固定，以便执行旋转检测 响应于第一角速度的平面xy; 其中第一对16a'，16b'的感测质量和第二对16c'，16d'的感测质量在相对于第一水平轴线x具有相反符号的非零倾斜的各个方向上对准。 版权所有（C）2010，JPO＆INPIT

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