公开(公告)号：US20100078438A1

公开(公告)日：2010-04-01

申请号：US12520403

申请日：2006-12-16

Applicant: Jeong-Min Lee ,  Seong-Jae Lee

Inventor： Jeong-Min Lee ,  Seong-Jae Lee

IPC: B65D41/04 ,  B65D51/28

CPC classification number: B65D51/2864

Abstract: The present invention relates to a cap assembly mounted on a discharging portion of a container for containing an ingredient different from that in accommodated in a container, which comprise a cap body a cap body formed by an upper cap part and a lower cap part which may be divided along a cut-off line; a housing with a storage chamber for a secondary ingredient formed by the lower portion of the upper cap part; a sealing assembly provided below the lower cap part, comprising a sealing element and a space through which the secondary ingredient may be discharged in use; and a mouth formed above the lower cap part. The cap assembly of the present invention has advantageous effects of convenience in use and of preventing alteration thereof.

Abstract translation: 本发明涉及一种安装在容器的排放部分上的盖子组件，该容器用于容纳与容纳在容器中的成分不同的成分，该容器包括盖体，盖主体由上盖部分和下盖部分形成，盖主体可以由 沿着切断线划分; 具有由所述上盖部的下部形成的副成分的储存室的壳体; 设置在所述下盖部分下方的密封组件，包括密封元件和所述次要成分在使用中可以排出的空间; 以及形成在下盖部分上方的口。 本发明的盖组件具有使用方便和防止其变更的有利效果。

公开(公告)号：US07662282B2

公开(公告)日：2010-02-16

申请号：US11616197

申请日：2006-12-26

Applicant: Seong-Jae Lee ,  Dennis O'Neel

Inventor： Seong-Jae Lee ,  Dennis O'Neel

IPC: B01D35/06

CPC classification number: B03C1/288 ,  B03C2201/18 ,  B03C2201/30

Abstract: A permanent magnet array iron filter has a generally circular collar made of a high magnetic permeability material with a plurality of magnetic assemblies interiorly disposed longitudinally around an interior circumference therein. Each magnetic assembly has two magnets with opposite poles facing the center of the filter and a gap between the adjacent assemblies. This arrangement intensifies the resultant magnetic field and projects the field deeply within the interior region of the filter. Rare earth permanent magnets are used to maximize the magnetic field. The collar may be coated with a plastic coating to protect the filter. The collar has a gap to provide flexibility when sliding the filter over an oil filter. The thickness of the collar may be adjusted to meet the requirements of a particular application.

Abstract translation: 永磁体阵列铁过滤器具有由高磁导率材料制成的大致圆形的套环，多个磁性组件内部纵向地设置在其周围。 每个磁性组件具有两个磁体，其具有面向过滤器中心的相反极和相邻组件之间的间隙。 这种布置强化了所得到的磁场，并将场强投射到过滤器的内部区域内。 稀土永磁体用于使磁场最大化。 套环可以用塑料涂层涂覆以保护过滤器。 套筒有一个间隙，以便在过滤器上滑过油过滤器时提供灵活性。 可以调整套环的厚度以满足特定应用的要求。

公开(公告)号：US20100025356A1

公开(公告)日：2010-02-04

申请号：US12311598

申请日：2006-12-12

Applicant: Jeong-Min Lee ,  Seong-Jae Lee

Inventor： Jeong-Min Lee ,  Seong-Jae Lee

IPC: B65D51/28

CPC classification number: B65D47/243 ,  B65D51/2864

Abstract: A cap assembly having a storage chamber for a secondary ingredient with an integral type working device, which comprises a cap body and a working device; said cap body including a mouth and a housing sealing part with a droping space which is formed around the mouth; said working device adapted to move vertically, including an inner extended housing which is formed with a storage chamber for containing a secondary ingredient and having at least one outlet above seal portion formed at upper portion of the working device; and when the working device containing a secondary ingredient is assembled to the mouth of the cap body, the chamber is sealed by a housing sealing part.

Abstract translation: 一种盖组件，其具有用于具有一体式工作装置的次要成分的储存室，其包括盖体和加工装置; 所述盖体包括口部和壳体密封部分，所述壳体密封部分具有围绕所述口部形成的下落空间; 所述工作装置适于垂直移动，包括内部延伸壳体，该内部延伸壳体形成有用于容纳次要成分的储存室，并且在形成于工作装置上部的密封部分上方具有至少一个出口; 并且当将包含次要成分的工作装置组装到盖体的口部时，室被壳体密封部分密封。

公开(公告)号：US20100025268A1

公开(公告)日：2010-02-04

申请号：US12520415

申请日：2006-12-13

Applicant: Jeong-Min Lee ,  Seong-Jae Lee

Inventor： Jeong-Min Lee ,  Seong-Jae Lee

IPC: B65D51/28 ,  B65D25/08

CPC classification number: B65D51/2864 ,  B65D25/082 ,  B65D51/2835 ,  B65D81/3222

Abstract: The present invention relates to a cap assembly mounted on a discharging portion of a container for containing an ingredient different from that in accommodated in a container, which comprise a cap body having a housing formed with a chamber for storage of a secondary ingredient, a closing element provided at a lower end opening of the housing for opening the lower end opening under pressure so as to open the lower end opening.

Abstract translation: 本发明涉及一种安装在容器的排出部分上的盖组件，该容器包含与容纳在容器中的成分不同的成分，该容器包括盖主体，该主体具有形成有用于存储次要成分的室， 设置在壳体的下端开口处，用于在压力下打开下端开口以打开下端开口。

公开(公告)号：US20090250756A1

公开(公告)日：2009-10-08

申请号：US12485777

申请日：2009-06-16

Applicant: Yark Yeon Kim ,  Moon Gyu Jang ,  Jae Heon Shin ,  Seong Jae Lee

Inventor： Yark Yeon Kim ,  Moon Gyu Jang ,  Jae Heon Shin ,  Seong Jae Lee

IPC: H01L27/12

CPC classification number: H01L29/665 ,  H01L21/2252 ,  H01L21/2254 ,  H01L21/28518 ,  H01L21/28537 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66636 ,  H01L29/7834 ,  H01L29/7839

Abstract: An n-type SBTT and a manufacturing method thereof are provided. The SBTT includes a silicon layer, a gate, a double layer that has a rare-earth metal silicide layer and a transition metal silicide layer. The silicon layer has a channel region. The gate is formed in an overlapping manner on the channel region and has a gate dielectric layer on its interface with respect to the silicon layer. The double layer is formed as a source/drain that has the channel region interposed on the silicon layer.

Abstract translation: 提供了n型SBTT及其制造方法。 SBTT包括硅层，栅极，具有稀土金属硅化物层和过渡金属硅化物层的双层。 硅层具有沟道区。 栅极以重叠的方式形成在沟道区上，并且在其相对于硅层的界面上具有栅极介电层。 双层形成为具有介于硅层之间的沟道区的源极/漏极。

公开(公告)号：US20080128786A1

公开(公告)日：2008-06-05

申请号：US11950291

申请日：2007-12-04

Applicant: Taeyoub KIM ,  Myungsim JUN ,  Yark-Yeon KIM ,  Moon-Gyu JANG ,  Chel-Jong CHOI ,  Seong-Jae LEE ,  Byoungchul PARK

Inventor： Taeyoub KIM ,  Myungsim JUN ,  Yark-Yeon KIM ,  Moon-Gyu JANG ,  Chel-Jong CHOI ,  Seong-Jae LEE ,  Byoungchul PARK

IPC: H01L29/788 ,  H01L21/336

CPC classification number: H01L29/788 ,  B82Y10/00 ,  H01L29/40114 ,  H01L29/41725 ,  H01L29/42324 ,  H01L29/47 ,  H01L29/66825 ,  H01L29/7839 ,  H01L29/78654 ,  H01L29/7881

Abstract: Provided are a high density semiconductor memory device capable of precisely reading data by suppressing the occurrence of a leakage current due to the high-integration of the semiconductor memory device, and a method for manufacturing the semiconductor memory device. The high density semiconductor memory device includes: source and drain electrodes disposed over a substrate, and forming a Schottky junction with a channel region; and a floating gate disposed over the substrate of the channel region, and configured with a plurality of nanodots. The nanodots may be formed of a silicon compound or any material that can be charged.

Abstract translation: 提供一种能够通过抑制由于半导体存储器件的高集成度而导致的漏电流的发生而精确读取数据的高密度半导体存储器件以及半导体存储器件的制造方法。 高密度半导体存储器件包括：源极和漏极，设置在衬底上，并与沟道区形成肖特基结; 以及浮置栅极，设置在沟道区域的衬底上，并且配置有多个纳米点。 纳米点可以由硅化合物或可以被充电的任何材料形成。

公开(公告)号：US07312510B2

公开(公告)日：2007-12-25

申请号：US11187654

申请日：2005-07-22

Applicant: Jae Heon Shin ,  Moon Gyu Jang ,  Yark Yeon Kim ,  Seong Jae Lee

Inventor： Jae Heon Shin ,  Moon Gyu Jang ,  Yark Yeon Kim ,  Seong Jae Lee

IPC: H01L29/47

CPC classification number: H01L29/7839 ,  G11C11/56

Abstract: A device using an ambipolar transport of an SB-MOSFET and a method for operating the same are provided. The SB-MOSFET includes: a silicon channel region; a source and a drain contacted on both sides of the channel region and formed of material including metal layer; and a gate formed on the channel region, with a gate dielectric layer interposed therebetween. Positive (+), 0 or negative (−) gate voltage is selectively applied to the gate, the channel becomes off-state when the gate voltage between a negative threshold voltage and a positive threshold voltage is applied, and the channel becomes a first on-state and a second on-state when the gate voltage is lower than the negative threshold voltage or higher than the positive threshold voltage. Accordingly, it is possible to implement three current states, that is, hole current, electron current, and no current. The SB-MOSFET can be applied to a multi-bit memory and/or multi-bit logic device.

Abstract translation: 提供了使用SB-MOSFET的双极运输的装置及其操作方法。 SB-MOSFET包括：硅沟道区; 源极和漏极在沟道区域的两侧接触并由包括金属层的材料形成; 以及形成在沟道区上的栅极，介于其间的栅介质层。 正极（+），0或负（ - ）栅极电压选择性地施加到栅极，当施加负阈值电压和正阈值电压之间的栅极电压时，通道变为截止状态，并且通道变为第一个 当门电压低于负阈值电压或高于正阈值电压时，状态和第二导通状态。 因此，可以实现三种电流状态，即空穴电流，电子电流，无电流。 SB-MOSFET可以应用于多位存储器和/或多位逻辑器件。

公开(公告)号：US07268407B2

公开(公告)日：2007-09-11

申请号：US11196180

申请日：2005-08-03

Applicant: Moon Gyu Jang ,  Yark Yeon Kim ,  Jae Heon Shin ,  Seong Jae Lee

Inventor： Moon Gyu Jang ,  Yark Yeon Kim ,  Jae Heon Shin ,  Seong Jae Lee

IPC: H01L31/07

CPC classification number: H01L29/7613 ,  B82Y10/00 ,  H01L29/872

Abstract: Provided are a Schottky barrier tunnel single electron transistor and a method of manufacturing the same that use a Schottky barrier formed between metal and semiconductor by replacing a source and a drain with silicide as a reactant of silicon and metal, instead of a conventional method of manufacturing a single electron transistor (SET) that includes source and drain regions by implanting dopants such that an artificial quantum dot is formed in a channel region. As a result, it does not require a conventional PADOX process to form a quantum dot for a single electron transistor (SET), height and width of a tunneling barrier can be artificially adjusted by using silicide materials that have various Schottky junction barriers, and it is possible to improve current driving capability of the single electron transistor (SET).

Abstract translation: 提供了一种肖特基势垒隧道单电子晶体管及其制造方法，其替代传统的制造方法，而是用硅化物替代源极和漏极作为硅和金属的反应物，从而形成金属和半导体之间形成的肖特基势垒 单电子晶体管（SET），其通过注入掺杂剂而包括源极和漏极区域，使得在沟道区域中形成人造量子点。 结果，不需要传统的PADOX工艺来形成单电子晶体管（SET）的量子点，隧道势垒的高度和宽度可以通过使用具有各种肖特基结屏障的硅化物材料进行人工调整，而且 可以提高单电子晶体管（SET）的电流驱动能力。

公开(公告)号：US20070057668A1

公开(公告)日：2007-03-15

申请号：US11459157

申请日：2006-07-21

Applicant: Seong-Jae Lee ,  Sang-Hoon Song ,  Yevgen Melikhov ,  Choon-Mahn Park ,  Hans Hauser ,  David Jiles

Inventor： Seong-Jae Lee ,  Sang-Hoon Song ,  Yevgen Melikhov ,  Choon-Mahn Park ,  Hans Hauser ,  David Jiles

IPC: G01N27/82

CPC classification number: G01N21/21 ,  G01D5/145 ,  G01N21/1717

Abstract: A system and method to detect angular rotation, linear displacement and/or surface deformations is presented. The method is based on the ability of a linear polarized light to interact with magnetic materials and to change its polarization angle due to Faraday effect. A basic structure of the system consists of a magneto-optic (MO) film with a two-domain structure and a single domain wall which are generated by gradient magnetic field produced by opposite polarity permanent magnets placed near the film. An AC magnetic field applied perpendicular to the MO film surface causes the magnetic domain wall in the MO film to oscillate at the same frequency. This leads to a detected output AC modulated signal. By measuring the temporal changes in this signal, information on angular rotation, linear displacement and/or surface deformation can be obtained.

Abstract translation: 提出了检测角旋转，线性位移和/或表面变形的系统和方法。 该方法基于线性偏振光与磁性材料相互作用并由于法拉第效应而改变其偏振角的能力。 系统的基本结构由具有双畴结构的磁光（MO）膜和由放置在膜附近的相反极性永磁体产生的梯度磁场产生的单畴壁组成。 垂直于MO膜表面施加的AC磁场使得MO膜中的磁畴壁以相同的频率振荡。 这导致检测到的输出AC调制信号。 通过测量该信号的时间变化，可以获得关于角旋转，线性位移和/或表面变形的信息。

公开(公告)号：US07187933B2

公开(公告)日：2007-03-06

申请号：US11331221

申请日：2006-01-13

Applicant: Bong Yong Song ,  Jeong Chul Kim ,  Youl No Lee ,  Gab Seok Jang ,  Se Hyun Oh ,  Seong Jae Lee

Inventor： Bong Yong Song ,  Jeong Chul Kim ,  Youl No Lee ,  Gab Seok Jang ,  Se Hyun Oh ,  Seong Jae Lee

IPC: H04Q7/20 ,  H04Q7/00 ,  H04B7/216

CPC classification number: H04W72/0466 ,  H04B17/318 ,  H04B17/382 ,  H04B2201/70702 ,  H04W16/14 ,  H04W28/26 ,  H04W52/0206 ,  H04W72/02 ,  H04W72/0453 ,  H04W72/082 ,  H04W76/10 ,  H04W84/042 ,  Y02D70/00

Abstract: A method for assigning a channel in multi-FA CDMA mobile communication system according to the received power prevents communication quality of a FA from being inferior to that of the others by managing the interference level of the FA. The method comprises the steps of: comparing a first threshold value with received power when the base station receives a new call request; assigning a traffic channel in a first FA of the request, if the received power is less than the first threshold value, and searching a second FA of which received power is least, if not; comparing a second threshold value with the received power of the second FA; and assigning a traffic channel in the second FA if the received power is less than the second threshold value, and rejecting the request, if not.

Abstract translation: 根据接收到的功率，在多FA CDMA移动通信系统中分配信道的方法通过管理FA的干扰电平来防止FA的通信质量劣于其他信道。 该方法包括以下步骤：当基站接收到新的呼叫请求时，将第一阈值与接收功率进行比较; 如果接收功率小于第一阈值，则将业务信道分配到请求的第一FA中，并且如果不是则搜索接收功率最小的第二FA; 将第二阈值与所述第二FA的接收功率进行比较; 以及如果所接收的功率小于所述第二阈值，则在所述第二FA中分配业务信道，如果不是则拒绝所述请求。