Abstract:
PURPOSE: A private EV-DO and a data service method using the same are provided to simultaneously provide both public and private wireless EV-DO network services to users by using a CDMA 1x EV-DO type mobile terminal. CONSTITUTION: An AT(Access Terminal) transmits a signal requesting access to a private EV-DO wireless network to a private ANTS(Access Network Transceiver System)(S301). The private ANTS routes the private network access request signal to a pANC(private Access Network Control)(S302). The pANC determines whether the call connection signal is for a private EV-DO wireless network access or for a public EV-DO wireless network access(S303). If the call connection request signal is the private EV-DO wireless network access request signal, the pANC provides a session information request signal(S305). A pDLR(private Data Location Register) determines whether session information for the AT has been stored in a database(S306). If there is no session information on the AT, the pDLR requests session information on the AT from a public DLR of a public EV-DO wireless network(S307). The public DLR searches the session information on the AT and transmits it to the pDLR(S308). The pDLR authenticates the AT(S309). If the AT has been registered for the private EV-DO wireless network(S310), the pDLR stores the terminal session information transmitted from the public DLR in the database(S311) and then transmits it to the pANC(S312). The pANC allocates a traffic channel and processes a call(S313).
Abstract:
PURPOSE: A semiconductor memory device capable of testing a high frequency operation in a wafer state using a low frequency test equipment is provided whose operation can be tested with a high frequency in the wafer state. CONSTITUTION: According to the semiconductor memory device(200) capable of testing a high frequency operation in a wafer state, a clock generation part(210) generates an internal clock signal from a pulse generated at every edge of clock signals by inputting an external clock signal and a number of clock signals having a phase difference from the external clock signal from a test equipment(100). And a high frequency operation check part(220) compares core data of the semiconductor memory device in response to the internal clock signal.
Abstract:
본발명의다양한실시예는블루투스프로토콜에기반한데이터처리방법및 그전자장치에관한것으로, 상기전자장치는, 블루투스제어모듈; 상기블루투스제어모듈은애플리케이션사용을위한적어도둘 이상의 ATT(Attribute Protocol)를포함하는변경된블루투스저전력(bluetooth low energy: BLE) 프로토콜스택을저장하고, 상기변경된 BLE 프로토콜스택은제1 ATT 프로토콜을포함하여상기애플리케이션의 ATT 명령을처리하는제1 경로와제2 ATT 프로토콜을포함하여상기애플리케이션의 ATT 명령을처리하는제2 경로를포함하고; 및상기블루투스제어모듈에결합된프로세서를포함하고, 상기프로세서는상기블루투스제어모듈의상기적어도둘 이상의 ATT를포함하는변경된 BLE 프로토콜스택을이용하여상기 ATT 명령을포함하는상기애플리케이션의데이터를처리할수 있다. 다양한실시예가가능하다.
Abstract:
ASK 복조기 및 상기 복조기를 포함하는 통신 장치가 제공된다. 본 발명의 ASK 복조기는, 변조 신호(AMS)의 포락선을 검출하여 포락선 신호를 발생하는 포락선 검출기, 메인 클락 신호(MCLK)와 제1 내지 제n 클락 신호들을 생성하는 클락 생성기, 각각이 상기 포락선 신호를 제1 샘플링 클락 신호 및 제2 샘플링 클락 신호를 이용하여 샘플링하고, 샘플링된 포락선 신호간의 차이에 기초하여 기본 복조 신호를 출력하는 복수(2이상)의 기본 복조기들, 및 상기 복수의 기본 복조 신호들 중 어느 하나를 이용하여 최종 복조 신호를 생성하는 후신호 처리기를 포함한다.
Abstract:
PURPOSE: An image forming apparatus is provided to control the circulation of a stacking lever by the discharging state of a paper. CONSTITUTION: A discharging unit(110) discharges paper to the outside of a housing(1). Discharged paper is loaded to a paper loading part(120). A stacking lever is rotatably installed to the housing. The stacking lever guides the loading of the print media on the loading part. A driving unit(150) rotates the stacking lever. According to the discharged position, a control unit varies the circulation location of the stacking lever by controlling the driving unit.
Abstract:
A semiconductor integrated circuit device is provided to reduce unnecessary power consumption by supplying a minimum voltage capable of maintaining data in a logic block. A semiconductor integrated circuit device includes a logic block(500) and a power control circuit(100). The power control circuit controls power supplied to the logic block. The power control circuit supplies a minimum operation voltage required for maintaining the data stored in the logic block during data retention mode. The power control circuit includes a power gating circuit(120) supplying an operation voltage to the logic block during normal operation, a data retention circuit(130) supplying the minimum operation voltage to the logic block and a control part(110) controlling the power gating circuit and the data retention circuit in response to the data retention mode. The control part disables the power gating circuit and enables the data retention circuit, during the data retention mode.
Abstract:
A sense amplifier circuit of a semiconductor memory device and an operation method thereof are provided to improve data sensing characteristics, and to reduce chip size by removing or reducing a dummy cell. A bit line sense amplifier(611,612) is connected to a bit line, and senses and amplifies a signal of the bit line. A calibration circuit(620) calibrates a voltage level of the bit line on the basis of a logic threshold of the bit line sense amplifier. After the voltage level of the bit line is calibrated, the bit line sense amplifier senses and amplifies a signal of the bit line. The bit line sense amplifier comprises a 2-stage cascade type latch.