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    91.
    发明专利
    未知

    公开(公告)号：AT163498T

    公开(公告)日：1998-03-15

    申请号：AT93202454

    申请日：1986-11-14

    Applicant: CANON KK

    Inventor： OHZU HAYAO ,  SUZUKI TOSHIJI ,  ISHIZAKI AKIRA ,  TANAKA NOBUYOSHI ,  SUGAWA SHIGETOSHI ,  HASHIMOTO SEIJI ,  HARADA TADANORI

    IPC: H04N5/359 ,  H04N5/361 ,  H04N5/374 ,  H04N5/378 ,  H04N3/15 ,  H04N5/217

    Abstract: In a photoelectric transducer apparatus having a plurality of photoelectric transducer elements each having a capacitor electrode formed on a control electrode of a corresponding semiconductor transistor, the apparatus being adapted to sequentially select each element in units of lines, to control a potential of the control electrode of the selected photoelectric transducer element through the capacitor electrode, to store carriers in the control electrode region, and to read out a signal component corresponding to the amount of charge, the apparatus includes: optical information storing means for storing optical information read out from the photoelectric transducer element; and dark voltage storing means for storing a voltage corresponding to a dark voltage read out from the photoelectric transducer element, and actual optical information stored in the optical information storing means and information corresponding to the dark voltage component stored in the dark voltage storing means are simultaneously read out onto different information output lines.

    93.
    发明专利
    未知

    公开(公告)号：DE69222664D1

    公开(公告)日：1997-11-20

    申请号：DE69222664

    申请日：1992-01-10

    Applicant: CANON KK

    Inventor： SUGAWA SHIGETOSHI

    IPC: H01L27/146 ,  H01L31/107 ,  H01L31/20

    Abstract: A photoelectric converting device has a photoelectric converting part which consists of a light absorbing layer of a predetermined forbidden band width Eg1 and a carrier multiplying layer, positioned in laminate structure between charge injection blocking layers. The multiplying layer is composed of a layer or plural layers with a stepback structure of the forbidden band width having a minimum width Eg2 and a maximum width Eg3 in alternate manner and showing a continuous variation therebetween in each layer. The charge injection blocking layers, light absorbing layer and carrier multiplying layer are composed of non-monocrystalline semiconductors and at least having the minimum forbidden band width Eg2 and/or the maximum forbidden band width Eg3 contain a microcrystalline structure.

    94.
    发明专利
    未知

    公开(公告)号：DE3788393T2

    公开(公告)日：1994-04-14

    申请号：DE3788393

    申请日：1987-09-07

    Applicant: CANON KK

    Inventor： SUGAWA SHIGETOSHI ,  TANAKA NOBUYOSHI ,  SUZUKI TOSHIJI

    IPC: H01L27/146 ,  H01L31/10 ,  H04N5/335 ,  H04N5/357 ,  H04N5/369 ,  H04N5/374 ,  H04N5/378 ,  H01L27/14

    Abstract: A photoelectric conversion apparatus comprising a plurality of photoelectric conversion cells, each including a semiconductor transistor having a control electrode area which in turn includes a plurality of main electrode areas for reading signals, wherein the potential of the control electrode area is controlled to store carriers produced by optical pumping in the control electrode area, to read, from the main electrode area, a signal controlled by the storage voltage produced due to the storage, and to perform a refreshing operation to nullify the carriers stored in the control electrode area. A device is provided for performing a peak detection on the basis of signals from the main electrode area. At least one of the photoelectric conversion cells is shielded from light. The peak detection device performs the peak detection by detecting the difference between a peak signal obtained on the basis of a signal from the photoelectric conversion cells and a dark signal from the photoelectric conversion cells shielded from light.

    PHOTOELECTRIC CONVERSION DEVICE
    97.
    发明专利
    PHOTOELECTRIC CONVERSION DEVICE 未知

    公开(公告)号：CA1278079C

    公开(公告)日：1990-12-18

    申请号：CA542160

    申请日：1987-07-15

    Applicant: CANON KK

    Inventor： TANAKA NOBUYOSHI ,  NAKAMURA YOSHIO ,  SUGAWA SHIGETOSHI ,  OHZU HAYAO

    IPC: H01L27/146 ,  H04N1/028 ,  H04N5/335 ,  H04N5/353 ,  H04N5/365 ,  H04N5/369 ,  H04N5/374 ,  H01L27/14 ,  H04N3/15

    Abstract: A photoelectric conversion device includes a first main electrode region of a first conductivity type; a second main electrode region of a first conductivity type; a control electrode region of a second conductivity type opposite to the first conductivity type serving as an accumulation region for carriers induced by an electromagnetic wave; a first circuit for setting the control electrode region selectively at a constant potential and at a floating state; and a second circuit for setting the first main electrode region selectively at a low impedance state and at a floating state; whereby the first and second circuits control the carrier removal, accumulation and readout operations in accordance with the selection conditions by the first and second circuits.

    100.
    发明专利
    未知

    公开(公告)号：DE69922730T2

    公开(公告)日：2005-12-15

    申请号：DE69922730

    申请日：1999-04-21

    Applicant: CANON KK

    Inventor： HIYAMA HIROKI ,  SUGAWA SHIGETOSHI ,  UENO ISAMU ,  KOIZUMI TORU ,  KOCHI TETSUNOBU ,  SAKURAI KATSUHITO

    IPC: H04N5/365 ,  H04N5/3745 ,  H04N5/378 ,  H04N3/15

    Abstract: In a solid-state image sensing apparatus, each pixel includes a photodiode, a MOS amplifier whose gate receives photo-charge generated by the photodiode, and a MOS switch for controlling connection between the photodiode and the gate of the MOS amplifier, and transference of the photo-charge from the photodiode to the gate of the MOS amplifier is performed under a condition that a channel is formed under the gate of the MOS amplifier.

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