公开(公告)号：JP2009075427A

公开(公告)日：2009-04-09

申请号：JP2007245331

申请日：2007-09-21

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： WADA KENJI

IPC: G03F7/039 ,  G03F7/11 ,  G03F7/38 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a positive resist composition having good pattern formation and pattern collapse performance in normal exposure (dry exposure), liquid immersion exposure and double exposure, and to provide a pattern forming method using the positive resist composition, and a compound used for the positive resist composition. SOLUTION: The positive resist composition contains (A) a compound generating acid by irradiation with active light or radiation, (B) a resin increasing solubility to alkali developing solution by action of acid, and (C) a compound having a specific aromatic ring structure, decomposed by action of acid and generating acid. The pattern forming method using the positive resist composition and the compound used for the positive resist composition are provided. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供在正常曝光（干曝光），液浸曝光和双曝光中具有良好图案形成和图案塌陷性能的正性抗蚀剂组合物，并提供使用正性抗蚀剂组合物的图案形成方法， 和用于正性抗蚀剂组合物的化合物。 正型抗蚀剂组合物包含（A）通过用活性光或辐射照射产生酸的化合物，（B）通过酸作用增加对碱性显影液的溶解度的树脂，和（C）具有特定 芳环结构，通过酸的作用分解并产生酸。 提供使用正性抗蚀剂组合物和用于正性抗蚀剂组合物的化合物的图案形成方法。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2009075311A

公开(公告)日：2009-04-09

申请号：JP2007243532

申请日：2007-09-20

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： WADA KENJI

IPC: G03F7/039 ,  C08F220/28 ,  G03F7/11 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a positive resist composition having good sensitivity and line edge roughness in normal exposure (dry exposure), liquid immersion exposure and double exposure, and to provide a pattern forming method using the positive resist composition. SOLUTION: The positive resist composition contains (A) diaryl iodonium salt having an electron donar group on an aryl ring, and (B) a resin increasing solubility to alkali developing solution by action of acid. The pattern forming method uses the positive resist composition. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供在正常曝光（干式曝光），液浸曝光和双曝光中具有良好的灵敏度和线边缘粗糙度的正性抗蚀剂组合物，并提供使用正性抗蚀剂组合物的图案形成方法。 解决方案：正性抗蚀剂组合物含有（A）在芳基环上具有电子基团的二芳基碘鎓盐，和（B）通过酸作用增加对碱性显影液的溶解度的树脂。 图案形成方法使用正性抗蚀剂组合物。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008281980A

公开(公告)日：2008-11-20

申请号：JP2007227976

申请日：2007-09-03

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： WADA KENJI ,  TSUBAKI HIDEAKI ,  TARUYA SHINJI ,  HOSHINO WATARU ,  MIZUTANI KAZUYOSHI

IPC: G03F7/30 ,  G03F7/038 ,  G03F7/039 ,  G03F7/32 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a method for stably forming a high-accuracy fine pattern to be used in the production process of a semiconductor such as IC, in the production of a circuit substrate of liquid crystal, thermal head and the like or in other photofabrication processes, a resin composition to be used in the method and a developing solution to be used in the method. SOLUTION: The pattern forming method includes: (1) coating a resist composition that decreases the solubility in a negative developing solution upon irradiation with actinic rays or radiation; (2) exposing; and (3) developing with a negative developing solution. There are also provided the resist composition to be used in the method and the developing solution and a rinsing solution to be used in the method. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：为了提供一种用于稳定地形成用于诸如IC的半导体的制造过程中的高精度精细图案的方法，在制造液晶，热敏头和 或其他光制造方法中使用的方法中使用的树脂组合物和用于该方法的显影液。 图案形成方法包括：（1）在光化射线或辐射照射时，涂覆抗蚀剂组合物，其降低在显影液中的溶解度; （2）曝光; 和（3）用负显影液显影。 还提供了在该方法和显影液中使用的抗蚀剂组合物和用于该方法的冲洗溶液。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008203536A

公开(公告)日：2008-09-04

申请号：JP2007039591

申请日：2007-02-20

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： TSUBAKI HIDEAKI ,  WADA KENJI

IPC: G03F7/40 ,  G03F7/039 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a surface treating agent for a freezing process by which when a first resist pattern is formed on a first resist film, a second resist film is formed on the first resist pattern and in order to form a second resist pattern, the first resist pattern is chemically treated to change properties so that it is not dissolved in a second resist liquid, wherein the surface treating agent is used for chemically treating the first resist pattern so as to satisfy the requirements that the first resist pattern does not dissolve in the second resist liquid, the dimensions of the first resist pattern undergo no change, and the first and second resist patterns have the same dry etching resistance, and a pattern forming method using the surface treating agent. SOLUTION: The surface treating agent for pattern formation contains a polyhydric alcohol compound. The pattern forming method using the surface treating agent is also provided. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于冷冻处理的表面处理剂，其中当在第一抗蚀剂膜上形成第一抗蚀剂图案时，在第一抗蚀剂图案上形成第二抗蚀剂膜，以形成第一抗蚀剂图案 第二抗蚀剂图案，对第一抗蚀剂图案进行化学处理以改变其不溶于第二抗蚀剂液体的性质，其中表面处理剂用于化学处理第一抗蚀剂图案，以满足第一抗蚀剂图案的要求 图案不溶解在第二抗蚀剂液体中，第一抗蚀剂图案的尺寸不发生变化，并且第一和第二抗蚀剂图案具有相同的耐干蚀刻性，以及使用该表面处理剂的图案形成方法。 解决方案：用于图案形成的表面处理剂含有多元醇化合物。 还提供了使用表面处理剂的图案形成方法。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2008107806A

公开(公告)日：2008-05-08

申请号：JP2007239148

申请日：2007-09-14

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： SAEGUSA HIROSHI ,  WADA KENJI

IPC: G03F7/039 ,  C08F12/08 ,  C08F20/12 ,  C08F20/22 ,  C08F20/54 ,  C08F28/02 ,  C08F30/08 ,  G03F7/004 ,  G03F7/075 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a resist composition having improved line edge roughness not only in ordinary exposure (dry exposure) but also in immersion exposure, little in falling down of resist pattern due to PED between exposure and PEB and deterioration in profile, restrained in generation of scum, and good in the following ability of an immersion liquid at immersion exposure, and a pattern-forming method with the resist composition. SOLUTION: The resist composition is provided which comprises: (A) a resin with solubility in an alkali developer increased by action of an acid; (B) a compound generating an acid upon irradiation with actinic ray or radiation; (C) a resin having at least one of a fluorine atom and a silicon atom; and (D) a solvent, wherein the resin (C) has a degree of molecular weight dispersion of ≤1.3 and a weight average molecular weight of ≤1.0×10 4 . The pattern-forming method with the resist composition is provided. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：为了提供具有改善的线边缘粗糙度的抗蚀剂组合物，不仅在普通曝光（干曝光）中而且在浸没曝光中，由于曝光和PEB之间的PED而导致的抗蚀剂图案的下降很少， 轮廓，抑制浮渣的产生，以及在浸渍曝光时浸渍液的以下能力以及具有抗蚀剂组合物的图案形成方法。 解决方案：提供抗蚀剂组合物，其包含：（A）通过酸的作用增加在碱性显影剂中的溶解度的树脂; （B）在用光化射线或辐射照射时产生酸的化合物; （C）具有氟原子和硅原子中的至少一个的树脂; 和（D）溶剂，其中树脂（C）的分子量分散度≤1.3，重均分子量≤1.0×10 4 。 提供了具有抗蚀剂组合物的图案形成方法。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2007293249A

公开(公告)日：2007-11-08

申请号：JP2006257964

申请日：2006-09-22

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： KAMIMURA SATOSHI ,  SASAKI TOMOYA ,  KAWANISHI YASUHIRO ,  WADA KENJI

IPC: G03F7/039 ,  G03F7/004 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a positive resist composition simultaneously satisfying high sensitivity, high resolution, excellent pattern shape and line edge roughness. SOLUTION: The positive resist composition contains (Z) a compound having sulfonium cation having a structure expressed by general formula (Z-I), and (T) a low molecule compound increasing solubility to an alikali developer by action of acid. A pattern forming method using the positive resist composition is provided. In the general formula (Z-I), Y 1 -Y 13 each denote a hydrogen atom or a substitution group, and may be coupled by adjacent ones to form a ring. Z is single coupling or a bivalent coupling group. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供同时满足高灵敏度，高分辨率，优异的图案形状和线边缘粗糙度的正性抗蚀剂组合物。 解决方案：正型抗蚀剂组合物含有（Z）具有由通式（Z-I）表示的结构的锍阳离子的化合物，和（T）通过酸作用增加对阿利卡里显影剂的溶解度的低分子化合物。 提供了使用正性抗蚀剂组合物的图案形成方法。 在通式（Z-I）中，Y“表示氢原子或取代基，并且可以通过相邻的基团偶联形成环。 Z是单键或二价偶联基团。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2007065353A

公开(公告)日：2007-03-15

申请号：JP2005252017

申请日：2005-08-31

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： WADA KENJI

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a photosensitive composition which is improved in line edge roughness, pattern profile, EUV light exposing sensitivity, and dissolution contrast, and is used in manufacturing processes of semiconductors such as ICs, circuit boards for such as liquid crystals and thermal heads, and in other photofabrication processes, and also provide a pattern forming method using this composition. SOLUTION: This photosensitive composition contains compounds of specific structures, and this pattern forming method uses this photosensitive composition. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种在线边缘粗糙度，图案轮廓，EUV曝光灵敏度和溶解对比度方面得到改善的光敏组合物，并且用于诸如IC的半导体的制造工艺，诸如 液晶和热敏头，以及其他光加工工艺，并且还提供使用该组合物的图案形成方法。 该光敏组合物含有特定结构的化合物，该图案形成方法使用该感光性组合物。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2014013413A

公开(公告)日：2014-01-23

申请号：JP2013198915

申请日：2013-09-25

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： WADA KENJI

IPC: G03F7/004 ,  C08F220/26 ,  G03F7/039 ,  H01L21/027

CPC classification number: C08F20/10 ,  C07D211/96 ,  C07D243/04 ,  C07D295/26 ,  C08F214/18 ,  C08F220/26 ,  C08F220/34 ,  C08F220/38 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/2022 ,  G03F7/2041

Abstract: PROBLEM TO BE SOLVED: To provide a photosensitive composition allowing good pattern shape and line edge roughness in normal exposure (dry exposure), liquid immersion exposure and double exposure; a pattern formation method using the photosensitive composition; and a compound used in the photosensitive composition.SOLUTION: A photosensitive composition is characterized by containing a repeating unit corresponding to a compound represented by the general formula (I) and containing a resin (A) generating an acid group by irradiation with active rays or radial rays.

Abstract translation: 要解决的问题：提供在正常曝光（干式曝光），液浸曝光和双重曝光中允许良好图案形状和线边缘粗糙度的感光组合物; 使用该感光性组合物的图案形成方法; 和感光性组合物中使用的化合物。溶液：感光性组合物的特征在于含有对应于通式（I）表示的化合物的重复单元，并含有通过用活性射线照射产生酸基的树脂（A） 径向射线

公开(公告)号：JP2013050696A

公开(公告)日：2013-03-14

申请号：JP2012068197

申请日：2012-03-23

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： ARAYAMA KYOHEI ,  WADA KENJI ,  AMAMIYA TAKUMA

IPC: G03F7/039 ,  C08G73/10 ,  G03F7/004 ,  H01L21/027

CPC classification number: C08G73/10 ,  G03F7/0045 ,  G03F7/039 ,  G03F7/40

Abstract: PROBLEM TO BE SOLVED: To provide a photosensitive resin composition capable of forming a cured relief pattern which has a lithography performance excellent in resolution and sensitivity and prevents the warpage of a wafer through low-temperature curing, and to provide a relief pattern forming material using the photosensitive resin composition, a photosensitive film, a polyimide film, a cured relief pattern, a method for manufacturing the cured relief pattern, and a semiconductor device including the cured relief pattern.SOLUTION: A photosensitive resin composition contains (a) a resin having a repeating unit represented by formula (1), and (b) a compound for generating an acid by irradiation of active rays or radiation. In the formula (1), Rrepresents a bivalent organic group. A plurality of Rmay be the same or different from one another. At least one Rout of the plurality of Ris a bivalent organic group having an alicyclic group. Reach independently represents a hydrogen atom or an organic group. At least one -CORout of the plurality of -CORis a group which is decomposed by the action of an acid to generate an alkaline soluble group.

Abstract translation: 解决的问题：提供能够形成固化浮雕图案的感光性树脂组合物，其具有分辨率和灵敏度优异的光刻性能，并且通过低温固化来防止晶片的翘曲，并提供浮雕图案 使用感光性树脂组合物的成膜材料，感光性膜，聚酰亚胺膜，固化浮雕图案，固化浮雕图案的制造方法以及包括固化浮雕图案的半导体器件。 解决方案：感光性树脂组合物含有（a）具有由式（1）表示的重复单元的树脂和（b）通过活性射线或辐射的照射产生酸的化合物。 在式（1）中，R 2 表示二价有机基团。 多个R 2 可以彼此相同或不同。 多个R 2中的至少一个R 2 是具有脂环族基团的二价有机基团。 R 3 各自独立地表示氢原子或有机基团。 在多个-CO 2 中的至少一个-CO 2 R 3 < SB> R 3 是通过酸的作用分解产生碱溶性基团的基团。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2013029708A

公开(公告)日：2013-02-07

申请号：JP2011166394

申请日：2011-07-29

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： KANNA SHINICHI ,  WADA KENJI ,  AMAMIYA TAKUMA

IPC: G02B5/26 ,  C09K3/00 ,  G02B5/22 ,  H01L27/14

Abstract: PROBLEM TO BE SOLVED: To provide a near-infrared ray cut filter that is thin and has excellent heat resistance and spectral properties.SOLUTION: A near-infrared ray cut filter includes a near-infrared reflectance layer comprising a polyimide resin film and a dielectric multilayer, in which the thickness of the polyimide resin film is equal to or less than 80 μm.

Abstract translation: 要解决的问题：提供一种薄且具有优异的耐热性和光谱特性的近红外线截止滤光片。 解决方案：近红外线截止滤光器包括聚酰亚胺树脂膜和电介质多层膜的近红外反射层，其中聚酰亚胺树脂膜的厚度等于或小于80μm。 版权所有（C）2013，JPO＆INPIT