公开(公告)号：JP2010150656A

公开(公告)日：2010-07-08

申请号：JP2009267296

申请日：2009-11-25

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： NISHIMURA HIDEKI ,  MATSUKI YASUO

IPC: C23C16/18 ,  C01G51/02 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L23/52

Abstract: PROBLEM TO BE SOLVED: To provide a cobalt precursor composition in which preservation stability of a cobalt precursor is excellent, and sublimation residues are reduced even when being subjected to chemical vapor deposition after long term preservation, and to provide a method for forming a cobalt film by chemical vapor deposition in which utilization efficiency of the cobalt precursor is high.
SOLUTION: The composition contains a cobalt carbonyl complex and a solvent, wherein the concentration of carbon monoxide dissolved in the solvent is 0.001 to 1% by weight. The method includes: sublimating a cobalt carbonyl complex derived from the cobalt carbonyl complex composition and supplying it on the surface of a substrate; and converting the cobalt carbonyl complex into cobalt on the substrate.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 待解决的问题：提供一种钴前体组合物，其中钴前体的保存稳定性优异，并且即使长期保存后进行化学气相沉积，升华残渣也降低，并且提供一种形成方法 通过化学气相沉积法，钴前体的利用效率高的钴膜。 溶液：组合物含有羰基钴络合物和溶剂，其中溶解在溶剂中的一氧化碳的浓度为0.001〜1重量％。 该方法包括：升华由钴羰基络合物组合物衍生的羰基钴配合物，并将其供给到基材的表面上; 并将羰基钴络合物转化成基底上的钴。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2010077468A

公开(公告)日：2010-04-08

申请号：JP2008244686

申请日：2008-09-24

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： SAKAI TATSUYA ,  MATSUKI YASUO

IPC: C23C18/02 ,  C23C18/14 ,  H01L21/28 ,  H01L21/288

Abstract: PROBLEM TO BE SOLVED: To provide a composition for forming a ruthenium film by a simple and inexpensive coating method, and a method for forming the ruthenium film by the coating using the composition.
SOLUTION: The composition for forming the ruthenium film includes ruthenium compounds such as tetra (μ-trifluoro-acetate) di (acetone) di-ruthenium, and a tetra (μ-pentafluoro-propionate) di (acetone) di-ruthenium, and solvent. In the method for forming the ruthenium film, the ruthenium film is formed on a base body by coating the composition for forming the ruthenium film on the base body, and heating the composition and/or applying the light thereon.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 待解决的问题：通过简单且便宜的涂布方法提供用于形成钌膜的组合物，以及通过使用该组合物的涂层形成钌膜的方法。 解决方案：用于形成钌膜的组合物包括钌化合物如四（μ-三氟乙酸酯）二（丙酮）二钌和四（五氟丙酸酯）二（丙酮）二钌 ，和溶剂。 在形成钌膜的方法中，通过在基体上涂布用于形成钌膜的组合物，并在其上加热组合物和/或施加光，在基体上形成钌膜。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2009102224A

公开(公告)日：2009-05-14

申请号：JP2008303482

申请日：2008-11-28

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： IWAZAWA HARUO ,  WANG DAOHAI ,  MATSUKI YASUO ,  KATO HITOSHI

IPC: C01B33/04 ,  C01B33/02 ,  C01B33/08 ,  C09D4/00 ,  C09D183/16 ,  C23C18/08 ,  C23C18/14 ,  H01L21/208

CPC classification number: C09D183/16 ,  C01B33/08 ,  C09D4/00 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02628 ,  C08G77/00

Abstract: PROBLEM TO BE SOLVED: To provide a silane polymer having a higher molecular weight, especially a composition capable of easily forming a high-quality silicon film from the viewpoints of wettability, a boiling point and safety for its application to a substrate.
SOLUTION: The composition for forming a silicon film comprises a silane polymer obtained by irradiating a photopolymerizable silane compound with light of a specific wavelength range to photopolymerize it, and a method for forming a silicon film which comprises applying the composition to the substrate and subjecting the coated material to heat treatment and/or light treatment.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：为了提供具有较高分子量的硅烷聚合物，特别是从润湿性，沸点和其对基材的应用的安全性的角度考虑，可以容易地形成高质量硅膜的组合物。 解决方案：用于形成硅膜的组合物包括通过用光聚合硅烷化合物与特定波长范围的光照射光聚合而获得的硅烷聚合物，以及一种形成硅膜的方法，该方法包括将该组合物施加于基材 并对被覆材料进行热处理和/或光处理。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2009038097A

公开(公告)日：2009-02-19

申请号：JP2007199098

申请日：2007-07-31

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： MATSUKI YASUO

IPC: H01L21/285 ,  C23C16/18 ,  H01L21/28

Abstract: PROBLEM TO BE SOLVED: To provide a method of forming a platinum film on a base like an organic film.
SOLUTION: The method of forming the platinum film is provided, wherein a platinum compound is sublimated from a second base containing the platinum compound and sublimated gas thereof is supplied onto a first base for formation of the platinum film and decomposed to form the platinum film on a surface of the fist base.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 待解决的问题：提供在有机膜的基体上形成铂膜的方法。 解决方案：提供形成铂膜的方法，其中铂化合物从含有铂化合物的第二碱升华，并将升华的气体提供到用于形成铂膜的第一基底上，并分解形成 在白色薄膜表面的拳头基地。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008227389A

公开(公告)日：2008-09-25

申请号：JP2007066909

申请日：2007-03-15

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： IWAZAWA HARUO ,  MATSUKI YASUO ,  TAMAKI KENTARO

IPC: H01L21/316 ,  H01L21/312

Abstract: PROBLEM TO BE SOLVED: To provide a composition for forming a silicon dioxide film high in purity and density. SOLUTION: A composition for forming an oxidized silicon contains a silicide shown by a formula (1) (R 1 3 SiO 0.5 ) k (R 2 2 SiO) m (R 3 SiO 1.5 ) n and a carbonate composition shown by a formula (2), where in the formula (2): R 4 and R 5 are independent from each other, and show an straight-chained or branched alkyl group having a hydrogen atom and 1 to 20 carbon atoms, a monovalent aromatic hydro carbon group having 6 to 20 carbon atoms, or a monovalent halogenated aromatic hydro carbon group having 6 to 20 carbon atoms; and R 6 shows a substituted or unsubstituted organic group having 1 to 20 carbon atoms. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 待解决的问题：提供高纯度和密度的用于形成二氧化硅膜的组合物。 ＆lt; P＆gt;解决方案：用于形成氧化硅的组合物含有式（1）所示的硅化物（R 1 SiO 0.5 ） ķ（R 2 2 SIO）米（R 3 的SiO （2）中所示的碳酸酯组合物：其中在式（2）中：R 4 和R 5 / SP>彼此独立，并且显示具有氢原子和1至20个碳原子的直链或支链烷基，具有6至20个碳原子的一价芳族碳氢基团或一价卤代芳族烃碳 具有6至20个碳原子的基团; R 6表示具有1〜20个碳原子的取代或未取代的有机基团。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2006237392A

公开(公告)日：2006-09-07

申请号：JP2005051655

申请日：2005-02-25

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： SAKAI TATSUYA ,  MATSUKI YASUO

IPC: H01L21/28 ,  H01L21/288

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a conductive foundation film for burying a trench by a plating method to an insulating base having a trench of a small opening width and a large aspect ratio, or a formation method for forming an aluminum film which is useful as a method for forming a conductive film of a uniform thickness in an inner surface of a through-hole of a multilayer structure.
SOLUTION: The method for forming an aluminum film comprises a process (1) for preparing a base with a trench or a hole, a process (2) for applying a composition comprising compound and solvent comprising at least one kind of atom selected from a group consisting of titanium, palladium and aluminum on the base under a first pressure, a process (3) for putting the base after applied under a second pressure which is smaller than the first pressure in the application process, a process (4) for performing heat treatment for the base, a process (5) for applying a composition comprising a complex and solvent of amine compound and aluminum hydride, and a process (6) for performing heat treatment for the base.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种用于通过电镀方法将沟槽埋入的导电基底膜形成到具有小开口宽度和大纵横比的沟槽的绝缘基底的方法或用于形成的形成方法 铝膜，其可用作在多层结构的通孔的内表面中形成均匀厚度的导电膜的方法。 解决方案：用于形成铝膜的方法包括用于制备具有沟槽或孔的基底的方法（1），用于施加包含化合物和包含至少一种选择的原子的溶剂的组合物的方法（2） 在第一压力下在基材上由钛，钯和铝组成的组中，在施加过程中在小于第一压力的第二压力下施加基体的工序（3），工序（4） 用于对基底进行热处理的方法（5），用于施加包含胺化合物和氢化铝的络合物和溶剂的组合物的方法（5）和用于对所述碱进行热处理的方法（6）。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2006093256A

公开(公告)日：2006-04-06

申请号：JP2004274437

申请日：2004-09-22

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： IWAZAWA HARUO ,  MATSUKI YASUO ,  O DOUKAI

IPC: H01L21/208 ,  H01L31/04

CPC classification number: Y02E10/50

Abstract: PROBLEM TO BE SOLVED: To provide a silicon film of which thickness is large and of which quality is high, and to provide a convenient and simple method to form the silicon film. SOLUTION: The silicon film has a plurality of parts formed like a dome. The method for forming the silicon film includes a step where a silicon precursor or a solution containing a silicon precursor is applied like a pattern and it is processed thermally and/or optically. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供厚度大且质量高的硅膜，并提供形成硅膜的方便和简单的方法。 解决方案：硅膜具有多个形成为圆顶的部分。 形成硅膜的方法包括以下步骤：其中硅前体或含有硅前体的溶液以图案形式施加，并且其热和/或光学加工。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2006075744A

公开(公告)日：2006-03-23

申请号：JP2004263224

申请日：2004-09-10

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： MATSUKI YASUO ,  KAWAGUCHI KAZUO

IPC: B05D7/24 ,  B05D1/28 ,  H01B13/00 ,  H01L21/288 ,  H01L21/3205 ,  H01L23/52

Abstract: PROBLEM TO BE SOLVED: To provide a simple method of forming an aluminum pattern.
SOLUTION: The method comprises applying an alane-amine complex to a substrate by an applicator using a pen body composed of a fibrous strand, a felt or a porous material as an application medium and treating the coated substrate with heat and/or light.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种形成铝图案的简单方法。 解决方案：该方法包括使用由纤维束，毛毡或多孔材料构成的笔体作为施加介质的施用器将涂布器施加到基底上，并用热和/或 光。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2006057112A

公开(公告)日：2006-03-02

申请号：JP2004236910

申请日：2004-08-17

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： SAKAI TATSUYA ,  HASHIMOTO SACHIKO ,  MATSUKI YASUO

IPC: C23C16/52 ,  C23C16/16 ,  H01L21/28 ,  H01L21/285

Abstract: PROBLEM TO BE SOLVED: To provide a chemical vapor deposition method capable of performing a stable film deposition and obtaining a high-definition film even when using a raw material having low decomposition temperature. SOLUTION: The chemical vapor deposition method is characterized in that the pressure in a reaction chamber is varied by being reached to a first set pressure and a second set pressure, which is higher than the first set pressure, alternately. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 解决的问题：即使在使用分解温度低的原料的情况下，也能够提供能够进行稳定的膜沉积和获得高清晰度膜的化学气相沉积方法。 解决方案：化学气相沉积方法的特征在于，反应室中的压力交替地达到第一设定压力和第二设定压力而变化，第二设定压力高于第一设定压力。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2005298897A

公开(公告)日：2005-10-27

申请号：JP2004116730

申请日：2004-04-12

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： MATSUKI YASUO ,  KAWAGUCHI KAZUO

IPC: C23C18/10 ,  C23C18/14

Abstract: PROBLEM TO BE SOLVED: To provide a method for easily forming an aluminum pattern.
SOLUTION: In the aluminum pattern forming method, alan-amine complexes are coated on a base body by using a coating machine having a ballpoint pen tip structure with a rotatable ball as a coating medium, and the coated base body is treated with heat and/or light.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种容易地形成铝图案的方法。 解决方案：在铝图案形成方法中，通过使用具有可旋转球的圆珠笔笔尖结构的涂布机作为涂布介质，将胺 - 胺复合物涂覆在基体上，并且涂覆的基体用 热和/或光。 版权所有（C）2006，JPO＆NCIPI