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    LICHTEMITTIERENDES HALBLEITERBAUELEMENT MIT EINER SCHUTZDIODE
    93.
    发明公开
    LICHTEMITTIERENDES HALBLEITERBAUELEMENT MIT EINER SCHUTZDIODE 有权
    有保护二极管的半导体发光元件

    公开(公告)号：EP1687879A1

    公开(公告)日：2006-08-09

    申请号：EP04790047.7

    申请日：2004-10-26

    Applicant: Osram Opto Semiconductors GmbH

    Inventor： ALBRECHT, Tony ,  BRICK, Peter ,  PHILIPPENS, Marc ,  PLAINE, Glenn-Yves

    IPC: H01S5/026 ,  H01L27/15

    CPC classification number: H01S5/0261 ,  H01L23/62 ,  H01L27/15 ,  H01L2924/0002 ,  H01S5/042 ,  H01S5/06825 ,  H01S5/18311 ,  H01S5/40 ,  H01L2924/00

    Abstract: The invention relates to a light-emitting semiconductor component comprising a sequence of semiconductor layers (2) with an area of p-doped semiconductor layers (4) and n-doped semiconductor layers (3) between which a first pn junction (5a, 5b) is embodied. The pn junction (5a, 5b) is subdivided into a light-emitting section (7) and a protective diode section (8) in a lateral direction by means of an insulating section (6). An n-doped layer (9) which forms a second pn junction (10) that acts as a protective diode along with the p-doped area (4) is applied to the p-doped area (4) in the zone of the protective diode section (8). The first pn junction (5b) in the protective diode section (8) is provided with a larger area than the first pn junction (5a) in the light-emitting section (7). The protective diode section (8) protects the semiconductor component from voltage pulses due to electrostatic discharges (ESD).

    LUMINESZENZDIODENCHIP
    96.
    发明公开
    LUMINESZENZDIODENCHIP 有权

    公开(公告)号：EP2342765A2

    公开(公告)日：2011-07-13

    申请号：EP09756407.4

    申请日：2009-10-16

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： BRICK, Peter ,  LUCKNER, Hagen ,  SABATHIL, Matthias

    IPC: H01L33/38

    CPC classification number: H01L33/387 ,  H01L33/20 ,  H01L33/22 ,  H01L33/486 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A luminescent diode chip is disclosed which comprises a series of semiconductor layers, including an active layer suitable for generating electromagnetic radiation, and a first electrical connection layer that touches and contacts the series of semiconductor layers in an electrically conducting manner. The first electrical connection layer touches and contacts the series of semiconductor layers especially by means of a plurality of contact surfaces (21). Said luminescent diode chip specifically has a non-homogeneous current density distribution or current distribution in the series of semiconductor layers as a result of a non-homogeneous distribution of a mass per unit area of the contact surfaces along a main direction in which the series of semiconductor layers extends.

    VERFAHREN ZUR HERSTELLUNG EINES STRAHLUNGSEMITTIERENDEN BAUELEMENTS UND STRAHLUNGSEMITTIERENDES BAUELEMENT
    99.
    发明公开
    VERFAHREN ZUR HERSTELLUNG EINES STRAHLUNGSEMITTIERENDEN BAUELEMENTS UND STRAHLUNGSEMITTIERENDES BAUELEMENT 有权

    公开(公告)号：EP2191548A2

    公开(公告)日：2010-06-02

    申请号：EP08801200.0

    申请日：2008-08-18

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： BRICK, Peter

    IPC: H01S5/40 ,  H01S5/00

    CPC classification number: H01S5/4043 ,  H01S5/0035 ,  H01S5/1064 ,  H01S5/2004 ,  H01S5/22 ,  H01S5/3095 ,  H01S2301/18 ,  H01S2301/206

    Abstract: A method for producing a radiation-emitting component (1) is provided. A radiation characteristic in the far field is specified. From the predetermined radiation characteristic a refractive index profile is determined for the radiation-emitting component (1) in a direction extending perpendicular to a primary radiation direction of the component. A design for the component is determined such that the component has the previously determined refractive index profile. The component (1) is configured in accordance to the previously determined design. Furthermore, a radiation-emitting component is provided.

    Abstract translation: 提供了一种用于制造辐射发射部件（1）的方法。 指定远场的辐射特性。 根据预定的辐射特性，在垂直于部件的主辐射方向延伸的方向上为辐射发射部件（1）确定折射率分布。 确定组件的设计，使得组件具有先前确定的折射率分布。 组件（1）根据先前确定的设计来配置。 此外，提供发射辐射的部件。

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