中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

145 records (took 0.03 seconds)

    VERFAHREN ZUR HERSTELLUNG EINES HALBLEITERBAUELEMENTS AUF GAN-BASIS
    92.
    发明公开
    VERFAHREN ZUR HERSTELLUNG EINES HALBLEITERBAUELEMENTS AUF GAN-BASIS 有权

    公开(公告)号：EP1327267A1

    公开(公告)日：2003-07-16

    申请号：EP01987950.1

    申请日：2001-10-08

    Applicant: Osram Opto Semiconductors GmbH

    Inventor： BADER, Stefan ,  EISERT, Dominik ,  HAHN, Berthold ,  HÄRLE, Volker

    IPC: H01L33/00 ,  H01L27/15 ,  H01L21/18

    CPC classification number: H01L33/405 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/44

    Abstract: The invention relates to a method for the production of a semiconductor component, comprising a number of GaN layers, preferably serving as a radiation generator. A number of GaN-based layers (4) are deposited on a composite substrate, comprising a substrate body (1) and an intermediate layer (2), whereby the thermal coefficient of expansion of the substrate body (1) is similar to, or preferably greater than the thermal coefficient of expansion of the layers (4) based on GaN and the GaN-based layers (4) are deposited on the intermediate layer (2). The intermediate layer and the substrate body are connected by means of a wafer bonding process.

    Abstract translation: 半导体部件具有多个GaN基层，其优选用于产生在制造工艺中产生的辐射。 在该过程中，将多个GaN基层施加到包括基板主体和中间层的复合基板上。 衬底体的热膨胀系数与GaN基层的热膨胀系数相似或优选大于GaN基层的热膨胀系数，并且GaN基层沉积在中间层上。 中间层和基板主体优选通过晶片接合工艺接合。

    LUMINESZENZDIODENCHIP AUF DER BASIS VON GAN UND VERFAHREN ZUM HERSTELLEN EINES LUMINESZENDIODENBAUELEMENTS
    93.
    发明公开
    LUMINESZENZDIODENCHIP AUF DER BASIS VON GAN UND VERFAHREN ZUM HERSTELLEN EINES LUMINESZENDIODENBAUELEMENTS 有权

    公开(公告)号：EP1277241A1

    公开(公告)日：2003-01-22

    申请号：EP01931364.2

    申请日：2001-03-16

    Applicant: Osram Opto Semiconductors GmbH

    Inventor： BADER, Stefan ,  HAHN, Berthold ,  HÄRLE, Volker ,  LUGAUER, Hans-Jürgen ,  MUNDBROD-VANGEROW, Manfred

    IPC: H01L33/00

    CPC classification number: H01L33/0079 ,  H01L33/10 ,  H01L33/145 ,  H01L33/32 ,  H01L33/40 ,  H01L33/405 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/32245 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

    Abstract: The invention relates to a light-emitting diode chip comprising an electrically conductive substrate that is permeable to radiation. In said chip, the sequence of epitaxial layers (3) is covered, on substantially the whole surface of its p-doped side (9) that faces away from the substrate (2), with a reflective, bondable p-contact layer (6). On the substrate (2), the principal surface (10) facing away from the sequence of epitaxial layers (3) is provided with a metallic contact (7) that covers only part of said principal surface (10) and light is coupled out of the chip (1) via the exposed area on the principal surface (10) of the substrate (2) and via the sides of said chip (14). An additional light-emitting diode chip comprises exclusively epitaxial layers. The p-conductive epitaxial layer (5) is covered on substantially the whole of its principal surface (9) facing away from the n-conductive epitaxial layer (4), with a reflective, bondable p-contact layer (6) and on the n-conductive epitaxial layer (4), the principal surface (8) facing away from the p-conductive epitaxial layer (5) is provided with an n-contact layer (7) that covers only part of said principal surface. Light is coupled out of this chip (1) via the exposed area on the principal surface (8) of the n-conductive epitaxial layer (4) and via the sides of said chip (14).

    Abstract translation: 发光二极管芯片技术领域本发明涉及一种发光二极管芯片，其包括可透过辐射的导电基板。 在所述芯片中，外延层（3）的序列基本上在其背离衬底（2）的p掺杂侧（9）的整个表面上被反射性可结合p接触层（6 ）。 在衬底（2）上，远离外延层（3）的序列的主表面（10）设置有仅覆盖所述主表面（10）的一部分的金属接触件（7），并且光被耦合出 芯片（1）经由衬底（2）的主表面（10）上的暴露区域并经由所述芯片（14）的侧面。 另外的发光二极管芯片包括专门的外延层。 p-导电外延层（5）基本上在其背离n导电外延层（4）的整个主表面（9）上被覆盖，具有可反射的可结合的p-接触层（6） n导电外延层（4）中，远离p导电外延层（5）的主表面（8）设置有仅覆盖所述主表面的一部分的n接触层（7）。 光通过n导电外延层（4）的主表面（8）上的暴露区域并经由所述芯片（14）的侧面耦合出该芯片（1）。

Patent Agency Ranking