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91.发明公开
公开(公告)号：EP1258064A2
公开(公告)日：2002-11-20
申请号：EP01925294.9
申请日：2001-02-23
Applicant: Osram Opto Semiconductors GmbH
Inventor： LELL, Alfred , LUFT, Johann , HÄRLE, Volker , HAHN, Berthold
CPC classification number: H01S5/2232 , H01S5/2063 , H01S5/2205 , H01S5/2215 , H01S5/2216 , H01S5/223 , H01S5/32341
Abstract: According to the invention, a semiconductor component is produced for the emission of electromagnetic radiation, in particular, light, which is characterised by comprising an active layer for production of radiation, a p contact, electrically connected to the active layer, an n contact, electrically connected to the active layer and a current limiting structure for the definition of a current path, whereby the current limiting structure is provided between the n contact and the active layer.
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92.发明授权
公开(公告)号：EP2198465B1
公开(公告)日：2019-05-15
申请号：EP08801322.2
申请日：2008-09-11
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： OTT, Hubert , LELL, Alfred , TAUTZ, Sönke , STRAUSS, Uwe , BAUMANN, Frank , PETERSEN, Kirstin
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公开(公告)号：EP2223397B1
公开(公告)日：2019-01-30
申请号：EP08865674.9
申请日：2008-12-17
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： LELL, Alfred , EICHLER, Christoph , SCHMID, Wolfgang , TAUTZ, Sönke , REILL, Wolfgang , DINI, Dimitri
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公开(公告)号：EP3206239A1
公开(公告)日：2017-08-16
申请号：EP17157898.2
申请日：2008-08-27
Applicant: Osram Opto Semiconductors Gmbh
Inventor： LELL, Alfred , EICHLER, Christoph , RUMBOLZ, Christian
CPC classification number: H01L33/44 , H01L2924/0002 , H01S5/2022 , H01S5/22 , H01S5/2205 , H01S5/2218 , H01S5/222 , H01L2924/00
Abstract: Die Erfindung betrifft einen Strahlung emittierenden Halbleiterchip (1), der eine aktive Zone (2) zur Erzeugung von Strahlung der Wellenlänge Lambda und einen strukturierten Bereich (3) mit unregelmäßig angeordneten Strukturelementen aufweist, die ein erstes Material mit einem ersten Brechungsindex n 1 enthalten und die von einem Medium umgeben sind, das ein zweites Material mit einem zweiten Brechungsindex n 2 aufweist, wobei die Dicke einer Zwischenschicht, welche die Strukturelemente und das Medium aufweist, einer maximalen Höhe der Strukturelemente entspricht, wobei für einen effektiven Brechungsindex neff der Zwischenschicht n2
Abstract translation: 本发明涉及一种发射辐射的半导体芯片（1）具有用于产生波长为λ的辐射，并且结构化的区域的活性区域（2）（3）与不规则地排列，其包括具有第一折射率n1和所述第一种材料的结构元件 通过具有第二折射率n2，其特征在于，中间层的厚度，其具有的结构元件和所述介质，所述结构元件的最大高度对应，第二材料的介质所包围，其中用于中间层内夫N2 <纳夫<的有效折射率 n1，并且其中相应结构元件的基面宽度g小于相应结构元件的高度h。 此外，指定了用于制造这种半导体芯片的方法。
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Patent Agency Ranking
公开(公告)号：EP2035801B1
公开(公告)日：2017-08-09
申请号：EP07764376.5
申请日：2007-06-15
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： HÄRLE, Volker , LELL, Alfred , OTT, Hubert , STATH, Norbert , STRAUSS, Uwe
CPC classification number: G01M11/088 , B60Q1/0011 , B60Q11/005 , F21S8/06 , F21S41/13 , F21S41/141 , F21S41/16 , F21S41/24 , F21S45/46 , F21S45/47 , F21V3/061 , F21V3/062 , F21V3/10 , F21V7/005 , F21V7/045 , F21V7/22 , F21V9/30 , F21Y2103/00 , G01M11/30
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公开(公告)号：EP2359605B1
公开(公告)日：2013-01-02
申请号：EP09767929.4
申请日：2009-10-19
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： LELL, Alfred , TAUTZ, Sönke , STRAUSS, Uwe , BEHRINGER, Martin Rudolf , BRÜNINGHOFF, Stefanie , DINI, Dimitri , EISERT, Dominik , EICHLER, Christoph
CPC classification number: H04N9/3161 , H01S5/005 , H01S5/02292 , H01S5/4093 , H04N9/3129
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97.发明公开
公开(公告)号：EP2460241A1
公开(公告)日：2012-06-06
申请号：EP10740507.8
申请日：2010-06-28
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： LELL, Alfred , RAMMELSBERGER, Stefanie
CPC classification number: H01S5/4031 , H01S5/2036 , H01S5/2086 , H01S5/22 , H01S5/2214 , H01S5/4081
Abstract: The invention relates to a broad area laser (1), which has an epitaxial stack of layers (2) that has a top side (22) and a bottom side (23). The stack of layers (2) comprises an active layer (21) that produces radiation. The stack (2) of layers further comprises holes (3), in which at least one layer of the stack of layers (2) is at least partially removed and which lead from the top side (22) in the direction of the bottom side (23). The stack of layers (2) comprises webs (4) on the top side, said webs each adjoining the holes (3) so that the stack of layers (2) is strip-shaped on the top side. The webs (4) and the holes (3) each have a width (d
1 , d
2 ) of at most 20 µm. The invention further relates to a method for producing such a broad area laser (1).-
98.发明授权
公开(公告)号：EP1258064B1
公开(公告)日：2011-04-06
申请号：EP01925294.9
申请日：2001-02-23
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： LELL, Alfred , LUFT, Johann , HÄRLE, Volker , HAHN, Berthold
CPC classification number: H01S5/2232 , H01S5/2063 , H01S5/2205 , H01S5/2215 , H01S5/2216 , H01S5/223 , H01S5/32341
Abstract: According to the invention, a semiconductor component is produced for the emission of electromagnetic radiation, in particular, light, which is characterised by comprising an active layer for production of radiation, a p contact, electrically connected to the active layer, an n contact, electrically connected to the active layer and a current limiting structure for the definition of a current path, whereby the current limiting structure is provided between the n contact and the active layer.
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公开(公告)号：EP2104872A1
公开(公告)日：2009-09-30
申请号：EP07856112.3
申请日：2007-12-14
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： OTT, Hubert , LELL, Alfred , STRAUSS, Uwe , HÄRLE, Volker , STATH, Norbert
IPC: G02B6/00
CPC classification number: G02B6/0003 , G02B6/001 , G02B6/03622 , G02B6/03638
Abstract: One embodiment of the invention proposes a light emitting device, comprising a radiation source (5) for emitting a radiation (11) of at least one first wavelength, and an elongated, curved optical fiber body (20), into which the radiation (11) emitted by the radiation source is coupled, and which decouples light at an angle to the longitudinal axis thereof due to the coupled-in radiation (12) of a first wavelength.
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