公开(公告)号：EP2519985A1

公开(公告)日：2012-11-07

申请号：EP11711853.9

申请日：2011-03-28

Applicant: Osram Opto Semiconductors Gmbh

Inventor： ILLEK, Stefan ,  LINKOV, Alexander ,  SABATHIL, Matthias

IPC: H01L33/48 ,  H01L33/50 ,  H01L33/56 ,  H01L33/54 ,  G02B6/00 ,  H01L33/60

CPC classification number: G02B6/0023 ,  G02B6/0073 ,  H01L33/501 ,  H01L33/502 ,  H01L33/505 ,  H01L33/56 ,  H01L33/60 ,  H01L2224/48091 ,  H01L2224/8592 ,  H01L2933/0091 ,  H01L2924/00014

Abstract: An optoelectronic component (1) comprises a carrier (2) and at least one semiconductor chip (3). The semiconductor chip (3) is arranged on the carrier (2) and equipped to emit a primary radiation (6). The semiconductor chip (3) is enclosed at least partially by an at least partially transparent medium (7) having a height (8) above the carrier (2) and a width (9) along the carrier (2). Particles (10, 11) that interact with the primary radiation (6) are introduced into the medium (7). The medium (7) has a ratio of height (8) to width (9) of more than 1.

Abstract translation: 一种光电子器件（1）包括载体（2）和至少一个半导体芯片（3）。 半导体芯片（3）布置在载体（2）上并且被配备为发射初级辐射（6）。 半导体芯片（3）至少部分地由在载体（2）上方具有高度（8）和沿着载体（2）的宽度（9）的至少部分透明的介质（7）封闭。 与初级辐射（6）相互作用的颗粒（10,11）被引入到介质（7）中。 介质（7）的高度（8）与宽度（9）的比率大于1。

公开(公告)号：EP2465148A1

公开(公告)日：2012-06-20

申请号：EP10726134.9

申请日：2010-06-30

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： PETER, Matthias ,  MEYER, Tobias ,  OFF, Jürgen ,  TAKI, Tetsuya ,  HERTKORN, Joachim ,  SABATHIL, Matthias ,  LAUBSCH, Ansgar ,  BIEBERSDORF, Andreas

IPC: H01L33/32 ,  H01L33/06

CPC classification number: H01L33/06 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention relates to at least one embodiment of the electrically pumped optoelectronic semiconductor chip (1) comprising at least two radioactive quantum wells (2), wherein the radioactive quantum wells (2) comprise or are made of InGaN. The optoelectronic semiconductor chip (1) further comprises at least two coatings (4) comprising or made of AlGaN. Each of the coatings (4) is associated with exactly one of the radioactive quantum wells (2). The coatings (4) are each present at a p-side of the associated radioactive quantum well (2). A distance between the radioactive quantum well (2) and the associated coating (4) is no greater than 1.5 mm.

Abstract translation: 电泵浦光电子半导体芯片包括至少两个包含InGaN的辐射活性量子阱或者由它们组成。 光电半导体芯片包括至少两个包括AlGaN或其组成的覆盖层。 每个覆盖层被精确地分配给辐射有源量子阱中的一个。 覆盖层各自位于相关联的辐射有源量子阱的p侧上。 辐射有源量子阱与相关覆盖层之间的距离为1.5nm以下。

公开(公告)号：EP2011161A2

公开(公告)日：2009-01-07

申请号：EP07722298.2

申请日：2007-04-25

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： EICHLER, Christoph ,  MILLER, Stephan ,  STRAUSS, Uwe ,  HÄRLE, Volker ,  SABATHIL, Matthias

IPC: H01L33/00

CPC classification number: H01L33/465 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/405 ,  H01L2924/0002 ,  H01L2933/0091 ,  H01L2924/00

Abstract: Disclosed is an optoelectronic semiconductor component comprising a supporting substrate as well as an intermediate layer that provides adhesion between the supporting substrate and a component structure. The component structure encompasses an active layer that is used for generating radiation.

Abstract translation: 公开了一种光电子半导体部件，其包括支撑衬底以及提供支撑衬底和部件结构之间的粘合的中间层。 部件结构包含用于产生辐射的有源层。

公开(公告)号：EP2191520B8

公开(公告)日：2017-08-30

申请号：EP08801300.8

申请日：2008-09-04

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： HAHN, Berthold ,  WEIMAR, Andreas ,  BAUR, Johannes ,  SABATHIL, Matthias ,  PLAINE, Glenn-Ives

IPC: H01L33/40 ,  H01L33/38 ,  H01L33/14 ,  H01L33/00

CPC classification number: H01L33/38 ,  H01L33/10 ,  H01L33/145 ,  H01L33/405 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP2465148B1

公开(公告)日：2017-08-09

申请号：EP10726134.9

申请日：2010-06-30

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： PETER, Matthias ,  MEYER, Tobias ,  OFF, Jürgen ,  TAKI, Tetsuya ,  HERTKORN, Joachim ,  SABATHIL, Matthias ,  LAUBSCH, Ansgar ,  BIEBERSDORF, Andreas

IPC: H01L33/32 ,  H01L33/06

CPC classification number: H01L33/06 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP2149159B1

公开(公告)日：2017-03-01

申请号：EP08748775.7

申请日：2008-04-24

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： ENGL, Karl ,  RODE, Patrick ,  HÖPPEL, Lutz ,  SABATHIL, Matthias

IPC: H01L33/00

CPC classification number: H01L33/58 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/382 ,  H01L33/405 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP2165374B1

公开(公告)日：2016-08-17

申请号：EP08773274.9

申请日：2008-06-20

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： STRASSBURG, Martin ,  HÖPPEL, Lutz ,  SABATHIL, Matthias ,  PETER, Matthias ,  STRAUSS, Uwe

IPC: H01L33/04 ,  H01L33/32 ,  H01S5/30 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/343

CPC classification number: H01L33/32 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/06 ,  H01S5/3095 ,  H01S5/34333

公开(公告)号：EP2260516B1

公开(公告)日：2016-05-11

申请号：EP09727845.1

申请日：2009-03-13

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： ENGL, Karl ,  HÖPPEL, Lutz ,  RODE, Patrick ,  SABATHIL, Matthias

IPC: H01L33/40 ,  H01L33/10 ,  H01L33/38 ,  H01L33/46 ,  H01L33/62

CPC classification number: H01L33/382 ,  H01L33/10 ,  H01L33/40 ,  H01L33/46 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP2446321B1

公开(公告)日：2013-06-05

申请号：EP10725675.2

申请日：2010-06-15

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： GRÖTSCH, Stefan ,  KOCUR, Simon ,  SABATHIL, Matthias

IPC: G03B21/20 ,  H04N9/31 ,  H01L33/50 ,  G03B21/14 ,  G03B33/08

CPC classification number: H04N9/3111 ,  G03B21/2013 ,  G03B21/204 ,  G03B33/08 ,  H01L25/0756 ,  H01L27/15 ,  H01L33/22 ,  H01L33/382 ,  H01L2924/0002 ,  H04N9/3164 ,  H01L2924/00

公开(公告)号：EP2529399A1

公开(公告)日：2012-12-05

申请号：EP11700426.7

申请日：2011-01-17

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： SABATHIL, Matthias ,  VON MALM, Norwin ,  HOEPPEL, Lutz ,  ILLEK, Stefan ,  BARCHMANN, Bernd ,  RODE, Patrick

IPC: H01L25/075 ,  F21K99/00

CPC classification number: H01L25/0753 ,  H01L33/22 ,  H01L33/507 ,  H01L33/58 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A lighting device with front carrier, rear carrier and plurality of light-emitting diode chips, which when in operation emits light and releases waste heat, wherein rear carrier is covered at least in selected locations by front carrier, light-emitting diode chips are arranged between rear carrier and front carrier to form array, light-emitting diodes are contacted electrically by rear and/or front carrier and immobilized mechanically by rear carrier and front carrier, front carrier is coupled thermally conductively to light-emitting diode chips and includes light outcoupling face remote from light-emitting diode chips, which light outcoupling face releases some of waste heat released by light-emitting diode chips into surrounding environment, each light-emitting diode chip is actuated with electrical nominal power of 100 mW or less when lighting device is in operation and has light yield of 100 lm/W or more.

Abstract translation: 具有前载体，后载体和多个发光二极管芯片的照明装置，其在运行时发光并释放废热，其中后载体至少在前载体的选定位置被覆盖，发光二极管芯片被布置 在后部载体和前部载体之间形成阵列，发光二极管通过后部和/或前部载体电接触并且由后部载体和前部载体机械固定，前部载体与导热地耦合到发光二极管芯片并且包括光输出耦合 远离发光二极管芯片，该光耦合面将由发光二极管芯片释放的一些废热释放到周围环境中，当照明设备是光源时，每个发光二极管芯片以100mW或更小的电标称功率被致动 并且具有100lm / W或更高的光产量。