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    OPTOELEKTRONISCHE VORRICHTUNG
    91.
    发明公开
    OPTOELEKTRONISCHE VORRICHTUNG 有权

    公开(公告)号：EP2359668A2

    公开(公告)日：2011-08-24

    申请号：EP09774905.5

    申请日：2009-12-14

    Applicant: Osram Opto Semiconductors Gmbh

    Inventor： WIRTH, Ralph ,  KLEIN, Markus

    IPC: H05B33/08

    CPC classification number: H05B33/0869 ,  H05B33/0872

    Abstract: The invention relates to an optoelectronic device for radiating mixed light in a first wavelength range and a second wavelength range different from the first wavelength range, comprising a first or second semiconductor light source (1, 2) having a first or second light-emitting diode (11, 21), which radiates light having a first or second characteristic wavelength in the first or second wavelength range and having a first or second intensity when a first or second current (41, 42) is applied, an optical sensor (3) for converting a part (110, 510) of the respective radiated light from the semiconductor light sources (1, 2) into a first or second sensor signal (341, 342), and a control device (4) for controlling the first and second currents (41, 42) according to the first and second sensor signals (341, 342), wherein the characteristic wavelengths and intensities of the respective light radiated by the first and second semiconductor light sources (1, 2) have a first temperature- and/or current- and/or aging-dependence or second temperature- and/or current- and/or aging dependence (931, 932, 941, 942) different from the first temperature- and/or current- and/or aging-dependence, the optical sensor (3) has a first or second wavelength-dependent sensitivity in the first or second wavelength range, wherein said first and second wavelength-dependent sensitivities are adapted to the first and second temperature dependences (931, 932, 941, 942), and the control device (4) controls the first and second currents (41, 42) in such a way that there is a predetermined ratio of the first to the second sensor signal (341, 342).

    Abstract translation: 本发明涉及一种用于辐射第一波长范围和不同于第一波长范围的第二波长范围的混合光的光电子器件，包括：第一或第二半导体光源（1,2），其具有第一或第二发光二极管 （11,21），其在施加第一或第二电流（41,42）时发射具有第一或第二波长范围中的第一或第二特征波长的光并具有第一或第二强度，光学传感器（3） ，用于将来自半导体光源（1,2）的相应辐射光的一部分（110,510）转换成第一或第二传感器信号（341,342）;以及控制装置（4），用于控制第一和第二 根据所述第一传感器信号和所述第二传感器信号（341,342）产生电流（41,42），其中由所述第一半导体光源（1）和所述第二半导体光源（2）辐射的各个光的特征波长和强度具有第一温度，并且 /要么 电流和/或老化依赖性或与第一温度和/或电流和/或老化依赖性不同的第二温度和/或电流和/或老化依赖性（931,932,941,942），所述 光学传感器（3）在第一或第二波长范围内具有第一或第二波长相关灵敏度，其中所述第一和第二波长相关灵敏度适应于第一和第二温度相关性（931,932,941,942）， 并且控制装置（4）以这样的方式控制第一和第二电流（41,42），使得存在第一和第二传感器信号（341,342）的预定比率。

    OPTOELEKTRONISCHES BAUELEMENT
    92.
    发明公开
    OPTOELEKTRONISCHES BAUELEMENT 审中-公开
    光电组件

    公开(公告)号：EP2316130A2

    公开(公告)日：2011-05-04

    申请号：EP09798867.9

    申请日：2009-11-02

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： WIRTH, Ralph

    IPC: H01L25/075 ,  H01L33/00

    CPC classification number: H01L25/0753 ,  H01L25/167 ,  H01L33/50 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

    Abstract: The invention relates to an optoelectronic component (1) comprising a connection support (2), on which at least two radiation-emitting semiconductor chips (3) are located and a conversion element (4) that is fixed to the connection support (2), said conversion element (4) spanning the semiconductor chips (3) in such a way that the chips (3) are surrounded by the conversion element (4) and the connection support (2). At least two of the radiation-emitting semiconductor chips (3) differ from one another with respect to the wavelengths of the electromagnetic radiation that they emit during operation.

    LUMINESZENZDIODENCHIP MIT WINKELFILTERELEMENT
    93.
    发明公开
    LUMINESZENZDIODENCHIP MIT WINKELFILTERELEMENT 有权

    公开(公告)号：EP2149163A1

    公开(公告)日：2010-02-03

    申请号：EP08758109.6

    申请日：2008-05-21

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： STREUBEL, Klaus ,  WIRTH, Ralph

    IPC: H01L33/00

    CPC classification number: H01L33/50 ,  H01L33/22 ,  H01L33/44 ,  H01L33/46

    Abstract: The invention relates to a luminescence diode chip comprising a semiconductor body (1) producing radiation having a first wavelength, a luminescence conversion element (5) that produces radiation having a second wavelength from the radiation having the first wavelength, and an angle filter element (4) that reflects radiation that impacts said angle filter element at a particular angle relative to a primary emission direction back in the direction of the semiconductor body.

    Abstract translation: 发光二极管芯片包括产生第一波长的辐射的半导体本体。 发光转换元件从第一波长的辐射产生第二波长的辐射。 角度滤波器元件以相对于半导体主体的方向的主发射方向以特定角度反射照射在角度滤波器元件上的辐射。

    LED-HALBLEITERKÖRPER UND VERWENDUNG EINES LED-HALBLEITERKÖRPERS
    94.
    发明公开
    LED-HALBLEITERKÖRPER UND VERWENDUNG EINES LED-HALBLEITERKÖRPERS 审中-公开
    LED-HALBLEITERKÖRPERUND VERWENDUNG EINES LED-HALBLEITERKÖRPERS

    公开(公告)号：EP2067178A1

    公开(公告)日：2009-06-10

    申请号：EP07817458.8

    申请日：2007-08-28

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： HEIDBORN, Peter ,  WINDISCH, Reiner ,  WIRTH, Ralph

    IPC: H01L33/00 ,  H01L25/075

    CPC classification number: H01L25/0756 ,  H01L33/08 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The invention relates to an LED semiconductor element comprising at least one first radiation-generating active layer and at least one second radiation-generating active layer which is stacked on top of the first active layer in a vertical direction and is serially connected to the first active layer. The first active layer and the second active layer are connected in an electrically conducting manner by means of a contact zone. The invention further relates to different uses of said LED semiconductor element.

    Abstract translation: 本发明涉及一种LED半导体元件，其包括至少一个第一辐射产生活性层和至少一个第二辐射产生活性层，所述第二辐射产生活性层在垂直方向上堆叠在第一活性层的顶部上并且串联连接到第一活性层 层。 第一有源层和第二有源层借助于接触区以导电的方式连接。 本发明还涉及所述LED半导体元件的不同用途。

    VERFAHREN ZUR HERSTELLUNG EINES BEREICHS MIT REDUZIERTER ELEKTRISCHER LEITFÄHIGKEIT INNERHALB EINER HALBLEITERSCHICHT UND OPTOELEKTRONISCHES HALBLEITERBAUELEMENT
    96.
    发明公开
    VERFAHREN ZUR HERSTELLUNG EINES BEREICHS MIT REDUZIERTER ELEKTRISCHER LEITFÄHIGKEIT INNERHALB EINER HALBLEITERSCHICHT UND OPTOELEKTRONISCHES HALBLEITERBAUELEMENT 有权
    方法生产具有减少的电导的区域内的半导体层和光电半导体器件

    公开(公告)号：EP1749317A1

    公开(公告)日：2007-02-07

    申请号：EP05747600.4

    申请日：2005-04-25

    Applicant: Osram Opto Semiconductors GmbH

    Inventor： ILLEK, Stefan ,  STEIN, Wilhelm ,  WALTER, Robert ,  WIRTH, Ralph

    IPC: H01L33/00 ,  H01L21/363 ,  H01L21/24

    CPC classification number: H01L21/02461 ,  H01L21/02463 ,  H01L21/02554 ,  H01L21/02573 ,  H01L21/02631 ,  H01L21/7605 ,  H01L33/0062 ,  H01L33/42

    Abstract: The invention relates to a method for producing at least one area (8) having reduced electrical conductivity within an electrically conducting III-V semiconductor layer (3). The inventive method is characterized in that a ZnO layer (1) is applied to the area (8) of the semiconductor layer (3) and is then preferably annealed at a temperature ranging from 300 °C to 500 °C. The ZnO layer (1) is preferably deposited onto the III-V semiconductor layer (3) at a temperature of less than 150 °C, preferably between and including 25 °C and including 120 °C. The area (8) having reduced electrical conductivity is preferably disposed in a radiation-emitting optoelectronic component between the active zone (4) and a connecting contact (7), thereby reducing current injection into the areas of the active zone (4) opposite the connecting contact (7).

    Abstract translation: 在用于在导电III-V族半导体层（3），ZnO层内具有减小的导电率产生至少至少一个区域（8）的方法（1）被施加到区域（8）的半导体层（ 3），随后在优选300℃和500℃下的氧化锌层（1的温度下退火）在低于150℃的温度下的III-V族半导体层（3）上优选沉积，优选 在温度大于或等于25℃且小于或等于120℃具有降低的电导率优选地位于一个辐射发射有源区之间光电子装置的区域（8）（4）和连接 为了（7）接触，以降低电流注入到位于相对于连接（7）接触的有源区（4）的区域。

    LED MIT AUSKOPPELSTRUKTUR
    98.
    发明公开
    LED MIT AUSKOPPELSTRUKTUR 审中-公开
    LED与分离结构

    公开(公告)号：EP1295348A1

    公开(公告)日：2003-03-26

    申请号：EP01943139.4

    申请日：2001-05-23

    Applicant: Osram Opto Semiconductors GmbH

    Inventor： LINDER, Norbert ,  WIRTH, Ralph ,  ZULL, Heribert

    IPC: H01L33/00 ,  H01L27/15

    CPC classification number: H01L33/38 ,  H01L33/14 ,  H01L33/20

    Abstract: According to the invention, a textured coupling-out layer (6) with flanks (16) is located on an upper surface. Said flanks are aligned at an angle of between 60° and 88° in relation to the layer plane and form the boundaries of the coupling-out regions that are offset in relation to one another and are provided for emitting the radiation. The portions of the coupling-out layer that are located in the coupling-out regions can take the form of flat truncated cones and their flanks can be fluted or serrated, in order to increase the probability that the generated radiation strikes the external limiting surface of the coupling-out layer at a steeper angle than the critical angle of the total internal reflection.

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