公开(公告)号：JPS5961983A

公开(公告)日：1984-04-09

申请号：JP17221482

申请日：1982-09-30

Applicant: Sony Corp

Inventor： MATSUDA OSAMU ,  KANEKO KUNIO

IPC: H01S5/00 ,  H01S5/20 ,  H01S5/223

CPC classification number: H01S5/223 ,  H01S5/2063

Abstract: PURPOSE:To reduce the light source noise caused by feedback lights by a method wherein a gain guide type structure with narrow stripe due to proton implantation is formed. CONSTITUTION:A first clad layer 12 is epitaxially grown and an active layer 13 is epitaxially grown on the layer 12 and a second clad layer 14 is epitaxially grown on the layer 13 and a cap layer 15 is further epitaxially grown on the layer 14. High resistance regions 16 are formed by selectively implanting proton from the surface of the side whereon the clad layer 14 is formed i.e. the surface of the cap layer 15. The high resistance regions 16 are formed on boeh sides of a stripe part with specified width W extending in one direction and the implanted ends 16a (bottom surfaces) contained in the second clad layer 14 are set up so that the distance from the active layer 13 may be 0.2-0.5mum. These proton implanted regions 16 may be selectively formed by coating the cap layer 15 with e.g. Av mask and the like and implating proton through the cap layer 15.

Abstract translation: 目的：通过形成由于质子注入形成具有窄条纹的增益导向型结构的方法来减少由反馈光引起的光源噪声。 构成：外延生长第一包层12，在层12上外延生长有源层13，在层13上外延生长第二覆层14，并在层14上进一步外延生长覆盖层15.高 通过从形成包层14的一侧的表面（即覆盖层15的表面）选择性地注入质子而形成电阻区域16.高电阻区域16形成在具有指定宽度W的条带部分的勃 在一个方向上并且包含在第二包层14中的植入端16a（底面）被设置成使得距离有源层13的距离可以为0.2-0.5μm。 这些质子注入区域16可以通过用例如涂覆覆盖层15来选择性地形成。 Av掩模等，并通过盖层15引入质子。