公开(公告)号：JPWO2014133018A1

公开(公告)日：2017-02-02

申请号：JP2015502961

申请日：2014-02-26

Applicant: 大塚電子株式会社

Inventor： 久志 白岩 ,  久志 白岩

IPC: G01J3/02 ,  G01J3/36

CPC classification number: G01J3/0264 ,  G01J1/44 ,  G01J3/02 ,  G01J3/0232 ,  G01J3/0262 ,  G01J3/2803 ,  G01J3/42 ,  G01J2001/4406 ,  G01J2001/444 ,  G01J2001/448

Abstract: 分光光度計であって、受光した光を電気信号に変換して出力する光検出部と、複数のゲインアンプと複数のADコンバータを含み、前記光検出部からの出力信号を、前記複数のゲインアンプを用いて複数のゲインで増幅するとともに、前記複数のADコンバータを用いてデジタル信号に変換して、複数の光量データとして出力する回路部と、前記回路部からの各光量データが飽和したか否かを判定する飽和判定部と、前記飽和判定部の判定結果に応じて、前記複数の光量データのうち一部または全部の光量データを用いて前記受光した光の測定結果を算出する測定結果算出部と、を含むことを特徴とする。

Abstract translation: 分光光度计，用于将所接收的光转换成电信号，包括：多个增益放大器和多个AD转换器，从光检测单元的输出信号的光检测单元，其中所述多个增益 通过使用放大器放大多个增益，并使用所述多个AD转换器，用于输出多个光量的数据的电路部分中的数字信号，或转换，从所述电路部分中的光量数据是饱和的 一饱和度确定单元确定是否，根据所述判断结果的饱和判断单元，所述测量并用的一部分，或者光量数据中的所有多个光量数据的结果来计算所接收的光的测定结果 计算单元，其特征在于它包括：a。

公开(公告)号：JPWO2002073956A1

公开(公告)日：2004-07-08

申请号：JP2002571700

申请日：2002-03-01

Applicant: 本田技研工業株式会社

Inventor： 篠塚　典之 ,  典之 篠塚 ,  武部　克彦 ,  克彦 武部

IPC: H04N5/335 ,  G01J1/44 ,  G01J1/46 ,  H01L27/146 ,  H04N5/341 ,  H04N5/355 ,  H04N5/357 ,  H04N5/369 ,  H04N5/372 ,  H04N5/374

CPC classification number: H04N5/35518 ,  G01J1/44 ,  G01J1/46 ,  G01J2001/448 ,  H04N5/35509 ,  H04N5/378

Abstract: 光検知時の入射光量に応じて光電変換素子PDに流れるセンサ電流をMOS型トランジスタQのサブスレッショルド領域の特性を利用した弱反転状態で対数特性をもって電圧信号に変換し、その変換された電圧信号に応じたセンサ出力を生ずるようにした光センサ回路において、光電変換素子PDによる光検知に先がけて、その寄生容量の残留電荷を排出させる初期化手段(1)を設ける。これによって、ダイナミックレンジの広い、入射光量が少ない場合でも残像を生ずることがないセンサ信号を得ることができる。

公开(公告)号：JPS61138145A

公开(公告)日：1986-06-25

申请号：JP27487585

申请日：1985-12-06

Applicant: Warner Lambert Technol Inc

Inventor： JIYON KEE MAIKARITSUKU

IPC: G01J1/44 ,  G01N21/41 ,  G01N21/43

CPC classification number: G01N21/43 ,  G01J2001/448 ,  G01N2021/414 ,  G01N2201/126

公开(公告)号：US12123772B2

公开(公告)日：2024-10-22

申请号：US17839698

申请日：2022-06-14

Applicant: Quantum-Si Incorporated

Inventor： Thomas Raymond Thurston ,  Benjamin Cipriany ,  Joseph D. Clark ,  Todd Rearick ,  Keith G. Fife

IPC: G01J1/44 ,  G01N21/64 ,  G06T7/00 ,  H04N25/76 ,  H04N25/77

CPC classification number: G01J1/44 ,  G01N21/6408 ,  G01N21/6458 ,  H04N25/77 ,  G01J2001/446 ,  G01J2001/448 ,  G01N21/6428 ,  G01N2021/6439 ,  G06T7/0012 ,  G06T2207/10028 ,  G06T2207/10064 ,  G06T2207/30204 ,  H04N25/76

Abstract: An integrated circuit includes a photodetection region configured to receive incident photons. The photodetection region is configured to produce a plurality of charge carriers in response to the incident photons. The integrated circuit includes a charge carrier storage region. The integrated circuit also includes a charge carrier segregation structure configured to selectively direct charge carriers of the plurality of charge carriers directly into the at least one charge carrier storage region based upon times at which the charge carriers are produced.

公开(公告)号：US12123769B2

公开(公告)日：2024-10-22

申请号：US17412739

申请日：2021-08-26

Applicant: Sense Photonics, Inc.

Inventor： Scott Burroughs ,  Brent Fisher ,  James Carter

IPC: G01J1/44 ,  F21V5/04 ,  G01S7/481 ,  G01S17/02 ,  G01S17/89 ,  G01S17/894 ,  G02B5/08 ,  G02B26/10 ,  H01L25/00 ,  H01L31/167 ,  H01L31/18 ,  H01S3/02 ,  H01S5/00 ,  H01S5/02253 ,  H01S5/02375 ,  H01S5/026 ,  H01S5/042 ,  H01S5/062 ,  H01S5/12 ,  H01S5/183 ,  H01S5/30 ,  H01S5/40 ,  H01S5/42 ,  G02B3/00 ,  H01S5/02 ,  H01S5/02255

CPC classification number: G01J1/44 ,  F21V5/041 ,  F21V5/045 ,  G01S7/4815 ,  G01S17/02 ,  G01S17/89 ,  G01S17/894 ,  G02B5/0883 ,  G02B26/10 ,  H01L25/50 ,  H01L31/167 ,  H01L31/18 ,  H01S3/025 ,  H01S5/0028 ,  H01S5/0071 ,  H01S5/02253 ,  H01S5/02375 ,  H01S5/026 ,  H01S5/0262 ,  H01S5/04254 ,  H01S5/062 ,  H01S5/12 ,  H01S5/183 ,  H01S5/18394 ,  H01S5/18397 ,  H01S5/30 ,  H01S5/40 ,  H01S5/4025 ,  H01S5/4037 ,  H01S5/4075 ,  H01S5/423 ,  G01J2001/448 ,  G02B3/0006 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/02255 ,  H01S5/04257

Abstract: A laser diode includes a semiconductor structure of a lower Bragg reflector layer, an active region, and an upper Bragg reflector layer. The upper Bragg reflector layer includes a lasing aperture having an optical axis oriented perpendicular to a surface of the active region. The active region includes a first material, and the lower Bragg reflector layer includes a second material, where respective lattice structures of the first and second materials are independent of one another. Related laser arrays and methods of fabrication are also discussed.

公开(公告)号：US11888000B2

公开(公告)日：2024-01-30

申请号：US17470178

申请日：2021-09-09

Applicant: LG INNOTEK CO., LTD.

Inventor： Mark Allen Itzler ,  Brian Piccione ,  Xudong Jiang ,  Krystyna Slomkowski

IPC: H01L27/144 ,  H01L31/107 ,  H01L27/146 ,  H01L31/02 ,  G01J1/44 ,  H01C7/00

CPC classification number: H01L27/1446 ,  G01J1/44 ,  H01L31/02027 ,  H01L31/107 ,  G01J2001/448 ,  G01J2001/4466 ,  H01C7/006 ,  H01L27/14609

Abstract: A GmAPD FPA having increased tolerance optical overstress includes a limit resistor that is monolithically integrated into each pixel in the FPA, and which limits the magnitude of the current entering the read out integrated circuit.

公开(公告)号：US20230371780A1

公开(公告)日：2023-11-23

申请号：US18223390

申请日：2023-07-18

Applicant: Cedars-Sinai Medical Center

Inventor： Pramod BUTTE ,  Adam MAMELAK

IPC: A61B1/00 ,  G01J1/04 ,  G01J1/44 ,  A61B1/04 ,  A61B1/06 ,  A61B1/07 ,  G01J3/44 ,  A61B1/05 ,  H04N23/10 ,  H04N23/11 ,  H04N23/51 ,  H04N23/56 ,  H04N23/74 ,  G01N21/64 ,  G06T7/00 ,  H04N5/33

CPC classification number: A61B1/00009 ,  G01J1/0414 ,  G01J1/44 ,  A61B1/043 ,  A61B1/00117 ,  A61B1/063 ,  A61B1/0646 ,  A61B1/00045 ,  A61B1/07 ,  G01J3/44 ,  A61B1/042 ,  A61B1/00186 ,  A61B1/0638 ,  A61B1/00188 ,  A61B1/0669 ,  A61B1/05 ,  H04N23/10 ,  H04N23/11 ,  H04N23/51 ,  H04N23/56 ,  H04N23/74 ,  G01N21/6456 ,  G06T7/0012 ,  H04N5/33 ,  G01J2001/448 ,  G01N2021/6463

Abstract: The invention provides systems and methods for imaging a sample. In various embodiments, the invention provides a system comprising an image sensor, a laser for emitting excitation light for an infrared or near-infrared fluorophore, a visible light source, a notch beam splitter, a notch filter, a synchronization module, an image processing unit, an image displaying unit, and light-conducting channels. In various embodiments, the present invention provides a system comprising an image sensor, a laser for emitting excitation light for an infrared or near-infrared fluorophore, a laser clean-up filter, a notch filter, a white light source, an image processing unit, an image displaying unit, and light-conducting channels. In accordance with the present invention, the image sensor can detect both visible light and infrared light.

公开(公告)号：US11815628B2

公开(公告)日：2023-11-14

申请号：US18158448

申请日：2023-01-23

Applicant: STMICROELECTRONICS (RESEARCH & DEVELOPMENT) LIMITED

Inventor： Christopher Townsend ,  Thineshwaran Gopal Krishnan ,  James Peter Drummond Downing ,  Kevin Channon

IPC: G01S7/481 ,  G01J1/44 ,  G01S17/10 ,  G02B27/30 ,  H01S5/42 ,  H01S5/02253

CPC classification number: G01S7/4814 ,  G01J1/44 ,  G01S7/4816 ,  G01S17/10 ,  G02B27/30 ,  H01S5/02253 ,  H01S5/423 ,  G01J2001/448 ,  G01J2001/4466

Abstract: An apparatus comprises an array of vertical-cavity surface-emitting lasers. Each of the vertical-cavity surface-emitting lasers is configured to be a source of light. The apparatus also comprises an optical arrangement configured to receive light from a plurality of the vertical-cavity surface-emitting lasers and to output a plurality of light beams.

公开(公告)号：US20230332948A1

公开(公告)日：2023-10-19

申请号：US18043081

申请日：2021-08-26

Applicant: ams International AG

Inventor： André VAN DER AVOIRD ,  Bobby DANIEL ,  Erik JAN LOUS ,  Jagruth PRASANNA KUMAR

IPC: G01J1/44

CPC classification number: G01J1/44 ,  G01J2001/4466 ,  G01J2001/448

Abstract: A radiation-sensitive device is disclosed. The device includes an array of single photon avalanche diodes (SPADs) and circuitry configured to measure an intensity of incident radiation from the array of SPADs with a plurality of different measurement windows to provide an associated plurality of results. The circuitry is configured to determine the intensity of the incident radiation from one of the plurality of results, a selection of the result determined by whether the result exceeds a maximum count defined, at least in part, by a duration of the measurement window associated with the result. An associated method of increasing a dynamic range of a radiation-sensitive device comprising an array of SPADs is also disclosed.

公开(公告)号：US20230324220A1

公开(公告)日：2023-10-12

申请号：US18043084

申请日：2021-08-26

Applicant: ams International AG

Inventor： André VAN DER AVOIRD ,  Bobby DANIEL ,  Erik Jan LOUS ,  Jagruth PRASANNA KUMAR

IPC: G01J1/44

CPC classification number: G01J1/44 ,  G01J2001/4466 ,  G01J2001/442 ,  G01J2001/448 ,  G01J2001/444

Abstract: A radiation-sensitive device is disclosed. The device comprises a plurality of single photon avalanche diodes (SPADs) and circuitry configured to adapt a read-out rate of the plurality of SPADs in relation to an intensity of incident radiation. Also disclosed is an associated method of increasing a dynamic range of a radiation-sensitive device comprising a plurality of SPADs. The method comprises adapting a read-out rate of the plurality of SPADs in relation to an intensity of incident radiation.