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    Widely wavelength tunable polychrome colloidal photonic crystal device
    92.
    发明授权
    Widely wavelength tunable polychrome colloidal photonic crystal device 失效
    宽波长可调多色胶体光子晶体器件

    公开(公告)号：US07616376B2

    公开(公告)日：2009-11-10

    申请号：US12046313

    申请日：2008-03-11

    Applicant: Andre Arsenault ,  Ian Manners ,  Hernan Miguez ,  Geoffrey Alan Ozin

    Inventor： Andre Arsenault ,  Ian Manners ,  Hernan Miguez ,  Geoffrey Alan Ozin

    IPC: G02F1/00 ,  G02F1/355

    CPC classification number: B82Y20/00 ,  C09K2019/0496 ,  G02B6/1225 ,  G02F1/01 ,  G02F1/19 ,  G02F1/21 ,  G02F2201/305 ,  G02F2201/346 ,  G02F2202/022 ,  G02F2202/32 ,  G02F2203/055 ,  Y10T428/1023

    Abstract: A method of wavelength tuning a composite material. The method includes the steps of: producing an ordered array of first constituents having a first refractive index embedded within a cross-linked metallopolymer network having a second refractive index different than the first refractive index, the ordered array of first constituents having a lattice spacing giving rise to Bragg diffraction when the composite material is illuminated; and switching the electronic configuration of the cross-linked metallopolymer network so that the cross-linked polymer network changes dimensions and modulates the lattice spacing of the ordered array of first constituents, which shifts the Bragg diffraction wavelength to a pre-selected wavelength.

    Abstract translation: 一种复合材料的波长调谐方法。 该方法包括以下步骤：产生具有嵌入在具有不同于第一折射率的第二折射率的交联金属聚合物网络的第一折射率的第一成分的有序阵列，第一成分的有序阵列具有晶格间距给出 当复合材料被照亮时上升到布拉格衍射; 并且交换交联金属聚合物网络的电子结构，使得交联聚合物网络改变尺寸并调制第一组分的有序阵列的晶格间距，这将布拉格衍射波长移动到预选波长。

    Laser Source for the Infrared Wavelength Range
    94.
    发明申请
    Laser Source for the Infrared Wavelength Range 审中-公开
    激光源用于红外波长范围

    公开(公告)号：US20090207876A1

    公开(公告)日：2009-08-20

    申请号：US12084296

    申请日：2006-10-31

    Applicant: Markus Henriksson ,  Fredrik Laurell ,  Valdas Pasiskevicius

    Inventor： Markus Henriksson ,  Fredrik Laurell ,  Valdas Pasiskevicius

    IPC: H01S3/08 ,  G02B5/32

    CPC classification number: G02F1/39 ,  G02F2001/3507 ,  G02F2001/3548 ,  G02F2201/16 ,  G02F2201/307 ,  G02F2201/346

    Abstract: The present invention relates to a laser source for the infrared wavelength range which comprises a pump laser (1) which emits radiation (PP) which is input radiation to a first optical parametric oscillator (3, 4, 5), whose output radiation (SP) is input radiation to a second step in the form of a second optical parametric oscillator (7, 8, 9) or an optical parametric generator. At least one of the reflective devices of the first optical parametric oscillator consist of a Bragg grating (5) in a bulk material.

    Abstract translation: 本发明涉及一种用于红外波长范围的激光源，其包括向第一光学参量振荡器（3,4,5）输入辐射的辐射（PP）的泵激光器（1），其输出辐射（SP ）是以第二光参量振荡器（7,8,9）或光参量发生器的形式的第二步的输入辐射。 第一光学参量振荡器的至少一个反射装置由散装材料中的布拉格光栅（5）组成。

    Rapidly reconfigurable all-optical universal logic gate
    96.
    发明申请
    Rapidly reconfigurable all-optical universal logic gate 有权
    快速可重新配置的全光通用逻辑门

    公开(公告)号：US20080130084A1

    公开(公告)日：2008-06-05

    申请号：US11805115

    申请日：2007-05-21

    Applicant: Lynford L. Goddard ,  Tiziana C. Bond ,  Jeffrey S. Kallman

    Inventor： Lynford L. Goddard ,  Tiziana C. Bond ,  Jeffrey S. Kallman

    IPC: G02F1/01

    CPC classification number: G02F3/00 ,  G02F3/026 ,  G02F2201/16 ,  G02F2201/346

    Abstract: A new reconfigurable cascadable all-optical on-chip device is presented. The gate operates by combining the Vernier effect with a novel effect, the gain-index lever, to help shift the dominant lasing mode from a mode where the laser light is output at one facet to a mode where it is output at the other facet. Since the laser remains above threshold, the speed of the gate for logic operations as well as for reprogramming the function of the gate is primarily limited to the small signal optical modulation speed of the laser, which can be on the order of up to about tens of GHz. The gate can be rapidly and repeatedly reprogrammed to perform any of the basic digital logic operations by using an appropriate analog optical or electrical signal at the gate selection port. Other all-optical functionality includes wavelength conversion, signal duplication, threshold switching, analog to digital conversion, digital to analog conversion, signal routing, and environment sensing. Since each gate can perform different operations, the functionality of such a cascaded circuit grows exponentially.

    Abstract translation: 提出了一种新的可重新配置的全光学片上设备。 门通过将游标效果与新颖效果（增益指数杆）结合起来，以帮助主动激光模式从在一个面处输出激光的模式移动到在另一个面处输出的模式。 由于激光器保持在阈值以上，逻辑运算的栅极速度以及对栅极功能重新编程的速度主要限于激光器的小信号光调制速度，其可以达到大约数量级 的GHz。 可以通过在门选择端口处使用适当的模拟光电或电信号，快速且重复地重新编程门来执行任何基本的数字逻辑操作。 其他全光学功能包括波长转换，信号复制，阈值切换，模数转换，数模转换，信号路由和环境感测。 由于每个门可以执行不同的操作，所以这种级联电路的功能呈指数增长。

    Widely wavelength tuneable polychrome colloidal photonic crystal device
    97.
    发明授权
    Widely wavelength tuneable polychrome colloidal photonic crystal device 有权
    宽波长可调多色胶体光子晶体装置

    公开(公告)号：US07364673B2

    公开(公告)日：2008-04-29

    申请号：US10681374

    申请日：2003-10-09

    Applicant: Andre Arsenault ,  Hernan Miguez ,  Ian Manners ,  Geoffrey Alan Ozin

    Inventor： Andre Arsenault ,  Hernan Miguez ,  Ian Manners ,  Geoffrey Alan Ozin

    IPC: G02B5/23 ,  F21V9/08 ,  G02F1/361

    CPC classification number: B82Y20/00 ,  C09K2019/0496 ,  G02B6/1225 ,  G02F1/01 ,  G02F1/19 ,  G02F1/21 ,  G02F2201/305 ,  G02F2201/346 ,  G02F2202/022 ,  G02F2202/32 ,  G02F2203/055 ,  Y10T428/1023

    Abstract: The present invention discloses a widely wavelength tunable polychrome colloidal photonic crystal device whose optical Bragg diffraction stop bands and higher energy bands wavelength, width and intensity can be tuned in a continuous and fine, rapid and reversible, reproducible and predictable fashion and over a broad spectral range by a controlled expansion or contraction of the colloidal photonic lattice dimension, effected by a predetermined change in the electronic configuration of the composite material. In its preferred embodiment, the material is a composite in the form of a film or a patterned film or shape of any dimension or array of shapes of any dimension comprised of an organized array of microspheres in a matrix of a cross-linked metallopolymer network with a continuously variable redox state of charge and fluid content. The chemo-mechanical and electro-mechanical optical response of the colloidal photonic crystal-metallopolymer gel is exceptionally fast and reversible, attaining its fully swollen state from the dry shrunken state and vice versa on a sub-second time-scale. These composite materials can be inverted by removal of the constituent microspheres from the aforementioned colloidal photonic crystal metallopolymer-gel network to create a macroporous metallopolymer-gel network inverse colloidal photonic crystal film or patterned film or shape of any dimension optical Bragg diffraction stop bands and higher energy bands wavelength, width and intensity can be redox tuned in a continuous and fine, rapid and reversible, reproducible and predictable fashion and over a broad spectral range by a controlled expansion or contraction of the colloidal photonic lattice dimensions.

    Abstract translation: 本发明公开了一种广泛波长可调谐的多色胶体光子晶体器件，其光学布拉格衍射阻挡带和更高能带的波长，宽度和强度可以以连续和精细，快速和可逆，可再现和可预测的方式调谐，并且在宽光谱 通过胶体光子晶格尺寸的受控扩展或收缩，由复合材料的电子构型的预定变化实现。 在其优选实施方案中，该材料是膜或图案化膜的形式的复合材料或任何尺寸或任何尺寸形状阵列的形状的复合材料，其包含在交联金属聚合物网络的基质中的有组织的微球阵列， 不断变化的氧化还原电荷和流体含量。 胶体光子晶体金属聚合物凝胶的化学机械和机电光学响应特别快速和可逆，在亚秒级时间范围内从干收缩状态获得完全膨胀的状态，反之亦然。 这些复合材料可以通过从上述胶体光子晶体金属聚合物 - 凝胶网络中除去组成微球而反转，以产生大孔金属聚合物 - 凝胶网络反胶体光子晶体膜或任何尺寸的光学布拉格衍射阻带的图案化膜或更高的形状 能带的波长，宽度和强度可以通过胶体光子晶格尺寸的受控扩展或收缩，以连续和精细，快速和可逆，可再现和可预测的方式以及在宽光谱范围内进行氧化还原。

    Photonic crystal semiconductor device and production method thereof
    98.
    发明申请
    Photonic crystal semiconductor device and production method thereof 失效
    光子晶体半导体器件及其制造方法

    公开(公告)号：US20070013991A1

    公开(公告)日：2007-01-18

    申请号：US11505428

    申请日：2006-08-17

    Applicant: Tomofumi Kise ,  Tatsuya Kimoto ,  Noriyuki Yokouchi ,  Toshihiko Baba

    Inventor： Tomofumi Kise ,  Tatsuya Kimoto ,  Noriyuki Yokouchi ,  Toshihiko Baba

    IPC: G02B26/00 ,  G02F1/03 ,  G02F1/00 ,  G02F1/07

    CPC classification number: B82Y20/00 ,  G02B6/1225 ,  G02F1/01708 ,  G02F1/025 ,  G02F2201/346 ,  G02F2202/32 ,  G02F2203/055 ,  H01S5/0265 ,  H01S5/105 ,  H01S5/12 ,  H01S5/18311 ,  H01S5/18319 ,  H01S5/18369 ,  H01S5/2027

    Abstract: To provide a photonic crystal semiconductor device which enables various kinds of optical devices having a photonic crystal structure which is readily formed using a semiconductor and a semiconductor manufacturing process, and a manufacturing method thereof. The object can be achieved by a photonic crystal structure, including a lower DBR layer 1, a core layer 2, an upper DBR layer 3, and a dielectric multilayer film 6 which are sequentially laminated from an n-InP substrate 11 side, a plurality of holes 9 formed in the direction of a film thickness in the core layer 2 and the upper DBR layer 3, and a line defect portion 10 with none of the plurality of holes formed therein and disposed between the plurality of holes 9, wherein the line defect portion 10 serves as an optical waveguide.

    Abstract translation: 本发明提供一种光子晶体半导体器件及其制造方法，该光子晶体半导体器件能够实现使用半导体和半导体制造工艺容易地形成的具有光子晶体结构的各种光学器件。 该目的可以通过光子晶体结构实现，其包括从n-InP衬底11侧依次层叠的下DBR层1，芯层2，上DBR层3和电介质多层膜6，多个 形成在芯层2和上DBR层3中的膜厚度方向上的孔9以及在其中形成有多个孔并且设置在多个孔9之间的线缺陷部10，其中线 缺陷部分10用作光波导。

    Integration of buried oxide layers with crystalline layers
    99.
    发明申请
    Integration of buried oxide layers with crystalline layers 有权
    将掩埋氧化物层与结晶层集成

    公开(公告)号：US20060276002A1

    公开(公告)日：2006-12-07

    申请号：US11433736

    申请日：2006-05-12

    Applicant: Sheila Tandon ,  Gale Petrich ,  Leslie Kolodziejski

    Inventor： Sheila Tandon ,  Gale Petrich ,  Leslie Kolodziejski

    IPC: H01L21/76

    CPC classification number: G02F1/3523 ,  G02F2201/346 ,  H01L33/10 ,  H01S3/1118 ,  H01S5/18311 ,  H01S5/18372

    Abstract: A method of forming a buried oxide/crystalline III-V semiconductor dielectric stack is presented. The method includes providing a substrate and forming a layered structure on the substrate comprising of layers of different materials, one of the different materials is selected to be an oxidizable material to form one or more buried low index oxide layers. A first sequence of oxidizing steps are performed on the layered structure by exposing the edges of the layered structure to a succession of temperature increases in the presence of steam from an initial temperature to the desired oxidation temperature for a time interval equal to the sum of the time intervals of the succession of temperature increases. Also, the method includes performing a second sequential oxidizing step with steam on the layered structure at the specific oxidation temperature for a specific time interval. Furthermore, the method includes performing a final sequence of oxidizing steps on the structure by ramping down from the desired oxidation temperature to a final temperature when the oxidizing material is completely oxidized to form the one or more buried low index oxide layers.

    Abstract translation: 提出了形成掩埋氧化物/晶体III-V半导体电介质堆叠的方法。 该方法包括提供衬底并在包括不同材料的层的衬底上形成层状结构，不同材料之一被选择为可氧化材料以形成一个或多个掩埋的低折射率氧化物层。 通过将层状结构的边缘暴露于蒸汽存在下的一连串的温度升高，在层状结构上进行第一序列氧化步骤，时间间隔等于初始温度至期望的氧化温度 温度连续的时间间隔增加。 此外，该方法包括在特定氧化温度下在特定时间间隔内在层状结构上用蒸汽进行第二顺序氧化步骤。 此外，该方法包括当氧化材料被完全氧化以形成一个或多个掩埋的低折射率氧化物层时，通过从期望的氧化温度向下倾斜到最终温度，在结构上执行最终的氧化步骤序列。

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