Abstract:
Methods of circumscribing defects in optical devices are described. A perimeter is formed about a defect by laser ablation, where the perimeter electrically isolates the defect. The perimeter does not have damage due to excess energy from the laser and thus does not create new electrical shorts.
Abstract:
The present invention is a substrate for a display device comprising an active matrix substrate and an opposed substrate which are opposed to each other with a display medium layer interposed therebetween, said active matrix substrate including a pixel electrode arranged in a matrix shape on the side of the display medium layer and said opposed substrate including a common electrode opposing to the pixel electrode on the side of the display medium layer, wherein said substrate for a display device includes an electrode slit formed in one of the pixel electrode and the common electrode; and at least one of the electrical connecting portions of said electrode slit is provided outside of a light-blocking region.
Abstract:
A method of manufacturing a tiled display comprising: a) selecting a plurality of flat-panel displays, each having a display area comprising a plurality of pixels arranged in an array and having at least one defective pixel; and b) forming a tiled display by locating one or more faceplates in alignment with the plurality of flat-panel displays, the faceplates having a plurality of lightpipes in an array, the lightpipes having input and output end faces for transmitting light from the display areas of the flat-panel displays to a display surface of the tiled display, wherein the input end face of each of the lightpipes has an area larger than the area of one pixel of the selected flat-panel displays, and wherein each lightpipe transmits light from more than one pixel from the display area of the flat-panel displays to the display surface of the tiled display.
Abstract:
Electrochromic devices and methods may employ the addition of a defect-mitigating insulating layer which prevents electronically conducting layers and/or electrochromically active layers from contacting layers of the opposite polarity and creating a short circuit in regions where defects form. In some embodiments, an encapsulating layer is provided to encapsulate particles and prevent them from ejecting from the device stack and risking a short circuit when subsequent layers are deposited. The insulating layer may have an electronic resistivity of between about 1 and 108 Ohm-cm. In some embodiments, the insulating layer contains one or more of the following metal oxides: aluminum oxide, zinc oxide, tin oxide, silicon aluminum oxide, cerium oxide, tungsten oxide, nickel tungsten oxide, and oxidized indium tin oxide. Carbides, nitrides, oxynitrides, and oxycarbides may also be used.
Abstract:
Electrochromic devices and methods may employ the addition of a defect-mitigating insulating layer which prevents electronically conducting layers and/or electrochromically active layers from contacting layers of the opposite polarity and creating a short circuit in regions where defects form. In some embodiments, an encapsulating layer is provided to encapsulate particles and prevent them from ejecting from the device stack and risking a short circuit when subsequent layers are deposited. The insulating layer may have an electronic resistivity of between about 1 and 108 Ohm-cm. In some embodiments, the insulating layer contains one or more of the following metal oxides: aluminum oxide, zinc oxide, tin oxide, silicon aluminum oxide, cerium oxide, tungsten oxide, nickel tungsten oxide, and oxidized indium tin oxide. Carbides, nitrides, oxynitrides, and oxycarbides may also be used.
Abstract:
Electrochromic devices and methods may employ the addition of a defect-mitigating insulating layer which prevents electronically conducting layers and/or electrochromically active layers from contacting layers of the opposite polarity and creating a short circuit in regions where defects form. In some embodiments, an encapsulating layer is provided to encapsulate particles and prevent them from ejecting from the device stack and risking a short circuit when subsequent layers are deposited. The insulating layer may have an electronic resistivity of between about 1 and 108 Ohm-cm. In some embodiments, the insulating layer contains one or more of the following metal oxides: aluminum oxide, zinc oxide, tin oxide, silicon aluminum oxide, cerium oxide, tungsten oxide, nickel tungsten oxide, and oxidized indium tin oxide. Carbides, nitrides, oxynitrides, and oxycarbides may also be used.