公开(公告)号：EP0525455A2

公开(公告)日：1993-02-03

申请号：EP92111576.2

申请日：1992-07-08

Applicant: SHIN-ETSU HANDOTAI COMPANY LIMITED

Inventor： Netsu, Shigeyoshi ,  Tomizawa, Shinichi

IPC: H01L21/322 ,  H01L21/304

CPC classification number: H01L21/0201 ,  H01L21/02016 ,  H01L21/3221

Abstract: A semiconductor substrate and a method of making the same are disclosed in which an inorganic protective film is formed on the back side of a silicon single crystal wafer and then a distorted layer is introduced in the back side of the wafer by sandblasting, without generating mechanical fractures on the back surface. The semiconductor substrate having such distorted layer is able to provide a long lasting extrinsic gettering effect when subjected to a high temperature heat treatment achieved when the semiconductor substrate is processed into a device.

Abstract translation: 公开了一种半导体基板及其制造方法，其中在硅单晶晶片的背面上形成无机保护膜，然后通过喷砂将失真层引入晶片的背面，而不产生机械 背面有裂缝。 具有这种失真层的半导体衬底当经受半导体衬底被加工成器件时实现的高温热处理，能够提供长时间的外在吸气效果。

公开(公告)号：EP0137790B1

公开(公告)日：1987-05-06

申请号：EP84900442.9

申请日：1983-12-16

Applicant: Hughes Aircraft Company

Inventor： LITTLE, Michael, J. ,  BROWN, Roger, H. ,  EFRON, Uzi ,  HOBERG, Clarence, P.

IPC: H01L31/02 ,  H01L21/302 ,  B21D22/10 ,  G01B11/26

CPC classification number: H01L21/0201 ,  G01B11/26 ,  H01L31/0203

Abstract: A semiconductive substrate (1), such as a silicon wafer, is mounted on a baseplate (3), for inclusion in an optical device such as a liquid crystal light valve. An optical flat (9) presses the top surface of the silicon wafer toward the baseplate and against a ring seal (5) surrounding a fluid adhesive (7). The fluid adhesive hydrostatically distributes the force of compression to guarantee optical flatness and self-compensation for the amount fluid adhesive surrounded by the O-ring. The optical flatness of the semiconductor substrate is limited only by the flatness of the optical flat against which it is compressed. Parallel alignment of the optical flat (9), the substrate (1) and the baseplate (3) is achieved by reflecting a laser beam (20) through the semiconductive substrate and observing the interference fringes therein, while adjusting the relative alignment so as to maximize the distance between fringes.

Abstract translation: 将诸如硅晶片的半导体基板安装在基板上以包含在诸如液晶光阀的光学装置中。 光学平面将硅晶片的顶表面朝向基板压靠在环绕流体粘合剂的O形圈密封件上。 流体粘合剂可以流体分配压缩力，以保证由O形环包围的流体粘合剂的光学平面度和自我补偿。 半导体基板的光学平面度仅受到被压缩的光学平面的平坦度的限制。 光学平面，基板和基板的平行对准是通过将激光束反射通过半导体基板并观察其中的干涉条纹而实现的，同时调整相对对准以使条纹之间的距离最大化。

公开(公告)号：EP0137790A1

公开(公告)日：1985-04-24

申请号：EP84900442.0

申请日：1983-12-16

Applicant: Hughes Aircraft Company

Inventor： LITTLE, Michael, J. ,  BROWN, Roger, H. ,  EFRON, Uzi ,  HOBERG, Clarence, P.

IPC: G01J1 ,  G01B11 ,  H01L21 ,  H01L31

CPC classification number: H01L21/0201 ,  G01B11/26 ,  H01L31/0203

Abstract: Un substrat semiconducteur (1), par exemple une tranche de silicium, est monté sur une plaque de base (3) afin d'être inclus dans un dispositif optique comme un relais optique à cristaux liquides. Un plan optique (9) presse la surface supérieure de la tranche de silicium en direction de la plaque de base et contre un joint annulaire (5) entourant un adhésif fluide (7). L'adhésif fluide distribue de manière hydrostatique la force de compression afin de garantir une absence de distorsion optique et une autocompensation pour la quantité d'adhésif fluide entouré par le joint torique. L'absence de distorsion optique du substrat semiconducteur n'est limitée que par l'absence de distorsion du plan optique contre lequel il est comprimé. On obtient un alignement parallèle du plan optique (9), du substrat (1) et de la plaque de base (3) en faisant réfléchir un rayon laser (20) à travers le substrat semiconducteur et en y observant les franges d'interférence, tout en ajustant l'alignement relatif de manière à maximaliser la distance séparant les franges.

Abstract translation: 将诸如硅晶片的半导体基板安装在基板上以包含在诸如液晶光阀的光学装置中。 光学平面将硅晶片的顶表面朝向基板压靠在环绕流体粘合剂的O形圈密封件上。 流体粘合剂可以流体分配压缩力，以保证由O形环包围的流体粘合剂的光学平面度和自我补偿。 半导体基板的光学平面度仅受到被压缩的光学平面的平坦度的限制。 光学平面，基板和基板的平行对准是通过将激光束反射通过半导体基板并观察其中的干涉条纹而实现的，同时调整相对对准以使条纹之间的距离最大化。

公开(公告)号：US20240258179A1

公开(公告)日：2024-08-01

申请号：US18413289

申请日：2024-01-16

Applicant: DISCO CORPORATION

Inventor： Atsushi KOMATSU ,  Koichi MAKINO

IPC: H01L21/66 ,  B23K31/10 ,  B23K101/40 ,  H01L21/02 ,  H01L21/304

CPC classification number: H01L22/12 ,  B23K31/10 ,  H01L21/0201 ,  H01L21/304 ,  B23K2101/40

Abstract: A cutting method that measures heights of an outer periphery of a wafer, calculates height distribution data, and then calculates change rates of the heights of the outer periphery of the wafer. Based on results of a comparison between the height change rates and a threshold, the cutting method determines whether or not foreign matter exists on a back surface of the wafer (i.e., whether or not foreign matter exists on a holding surface of a chuck table). The existence of foreign matter on the holding surface can hence be detected appropriately. If foreign matter exists on the holding surface, a worker is notified, and the cutting operation is cancelled. Therefore, the cutting method can appropriately give notification to the worker that foreign matter is stuck on the holding surface, and can also appropriately avoid performing cutting processing with foreign matter stuck on the holding surface.

公开(公告)号：US10014400B2

公开(公告)日：2018-07-03

申请号：US15650504

申请日：2017-07-14

Applicant: Infineon Technologies AG

Inventor： Helmut Oefner ,  Nico Caspary ,  Mohammad Momeni ,  Reinhard Ploss ,  Francisco Javier Santos Rodriguez ,  Hans-Joachim Schulze

IPC: H01L29/739 ,  H01L21/02 ,  H01L29/66 ,  H01L21/324 ,  H01L21/268 ,  H01L29/10 ,  H01L21/18 ,  H01L21/322 ,  H01L21/28 ,  H01L21/225

CPC classification number: H01L29/7393 ,  H01L21/02002 ,  H01L21/02005 ,  H01L21/02008 ,  H01L21/0201 ,  H01L21/02016 ,  H01L21/187 ,  H01L21/2257 ,  H01L21/268 ,  H01L21/28238 ,  H01L21/3221 ,  H01L21/3225 ,  H01L21/324 ,  H01L21/3242 ,  H01L21/76256 ,  H01L29/1095 ,  H01L29/32 ,  H01L29/66325 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7813

Abstract: A semiconductor device includes: a semiconductor substrate having a first side, a second side opposite the first side, and a thickness; at least one semiconductor component integrated in the semiconductor substrate; a first metallization at the first side of the semiconductor substrate; and a second metallization at the second side of the semiconductor substrate. The semiconductor substrate has an oxygen concentration along a thickness line of the semiconductor substrate which has a global maximum at a position of 20% to 80% of the thickness relative to the first side. The global maximum is at least 2-times larger than the oxygen concentrations at each of the first side and the second side of the semiconductor substrate.

公开(公告)号：US09991175B2

公开(公告)日：2018-06-05

申请号：US15300653

申请日：2015-03-10

Applicant: Toyo Tanso Co., Ltd.

Inventor： Satoshi Torimi ,  Norihito Yabuki ,  Satoru Nogami

IPC: H01L21/00 ,  H01L21/66 ,  H01L21/02 ,  H01L21/04 ,  H01L29/16

CPC classification number: H01L22/12 ,  H01L21/0201 ,  H01L21/02019 ,  H01L21/02024 ,  H01L21/0475 ,  H01L21/3065 ,  H01L29/1608

Abstract: This method for estimating the depth of latent scratches in SiC substrates includes an etching step, a measurement step, and an estimation step. In the etching step, a SiC substrate in which at least the surface is formed from single crystal SiC, and which has been subjected to machining, is subjected to heat treatment under Si atmosphere to etch the surface of the SiC substrate. In the measurement step, the surface roughness or the residual stress of the SiC substrate which has been subjected to the etching step is measured. In the estimation step, the depth of latent scratches or the presence or absence of latent scratches in the SiC substrate before the etching step are estimated on the basis of the results obtained in the measurement step.

公开(公告)号：US20180085851A1

公开(公告)日：2018-03-29

申请号：US15714574

申请日：2017-09-25

Applicant: DISCO CORPORATION

Inventor： Kazuya Hirata

IPC: B23K26/00 ,  B23K26/06 ,  B23K26/40 ,  B23K26/38

CPC classification number: B23K26/53 ,  B23K26/0006 ,  B23K26/0622 ,  B23K26/0626 ,  B23K26/0823 ,  B23K26/0853 ,  B23K26/38 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/56 ,  H01L21/02005 ,  H01L21/0201

Abstract: A SiC wafer is produced from a single crystal SiC ingot. A modified layer is formed by setting a focal point of a pulsed laser beam inside the ingot at a predetermined depth from the upper surface of the ingot, the predetermined depth corresponding to the thickness of the wafer to be produced. The pulsed laser beam is applied to the ingot while moving the ingot in a first direction perpendicular to a second direction where an off angle is formed, thereby forming a modified layer in the first direction inside the ingot and cracks propagating from the modified layer along a c-plane. A separation surface is formed by indexing the ingot in the second direction and applying the laser beam plural times to thereby form a separation surface inside the ingot. Part of the ingot is separated along the separation surface to thereby produce the wafer.

公开(公告)号：US20170110378A1

公开(公告)日：2017-04-20

申请号：US15300653

申请日：2015-10-03

Applicant: Toyo Tanso Co., Ltd.

Inventor： Satoshi Torimi ,  Norihito Yabuki ,  Satoru Nogami

IPC: H01L21/66 ,  H01L21/02

CPC classification number: H01L22/12 ,  H01L21/0201 ,  H01L21/02019 ,  H01L21/02024 ,  H01L21/0475 ,  H01L21/3065 ,  H01L29/1608

Abstract: This method for estimating the depth of latent scratches in SiC substrates includes an etching step, a measurement step, and an estimation step. In the etching step, a SiC substrate in which at least the surface is formed from single crystal SiC, and which has been subjected to machining, is subjected to heat treatment under Si atmosphere to etch the surface of the SiC substrate. In the measurement step, the surface roughness or the residual stress of the SiC substrate which has been subjected to the etching step is measured. In the estimation step, the depth of latent scratches or the presence or absence of latent scratches in the SiC substrate before the etching step are estimated on the basis of the results obtained in the measurement step.

公开(公告)号：US20170080696A1

公开(公告)日：2017-03-23

申请号：US15219743

申请日：2016-07-26

Applicant: GRAPHENE FRONTIERS

Inventor： Bruce Ira WILLNER

IPC: B32B37/24 ,  B32B38/10

CPC classification number: B32B37/24 ,  B32B38/08 ,  B32B38/10 ,  B32B2037/243 ,  B32B2037/246 ,  C01B32/184 ,  C01B32/194 ,  H01L21/0201 ,  H01L21/67092 ,  H01L21/67132

Abstract: A method is disclosed which includes: forming at least one layer of material on at least part of a surface of a first substrate, wherein a first surface of the at least one layer of material is in contact with the first substrate thereby defining an interface; attaching a second substrate to a second surface of the at least one layer of material; forming bubbles at the interface; and applying mechanical force; whereby the second substrate and the at least one layer of material are jointly separated from the first substrate. Related arrangements are also described.

公开(公告)号：US09427946B2

公开(公告)日：2016-08-30

申请号：US14445746

申请日：2014-07-29

Applicant: Graphene Frontiers

Inventor： Bruce Ira Willner

IPC: H01L21/02 ,  H01L21/67 ,  B32B37/24 ,  B32B38/08 ,  C01B31/04

CPC classification number: B32B37/24 ,  B32B38/08 ,  B32B38/10 ,  B32B2037/243 ,  B32B2037/246 ,  C01B32/184 ,  C01B32/194 ,  H01L21/0201 ,  H01L21/67092 ,  H01L21/67132

Abstract: A method is disclosed which includes: forming at least one layer of material on at least part of a surface of a first substrate, wherein a first surface of the at least one layer of material is in contact with the first substrate thereby defining an interface; attaching a second substrate to a second surface of the at least one layer of material; forming bubbles at the interface; and applying mechanical force; whereby the second substrate and the at least one layer of material are jointly separated from the first substrate. Related arrangements are also described.

Abstract translation: 公开了一种方法，其包括：在第一衬底的表面的至少一部分上形成至少一层材料，其中所述至少一层材料的第一表面与所述第一衬底接触，从而限定界面; 将第二衬底附接到所述至少一层材料的第二表面; 在界面处形成气泡; 并施加机械力; 由此所述第二基板和所述至少一个材料层与所述第一基板共同分离。 还描述了相关的布置。