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    SOLDER BUMP SEALING METHOD AND DEVICE
    103.
    发明申请
    SOLDER BUMP SEALING METHOD AND DEVICE 审中-公开
    焊膏密封方法和装置

    公开(公告)号：WO2016025102A1

    公开(公告)日：2016-02-18

    申请号：PCT/US2015/039470

    申请日：2015-07-08

    Applicant: INNOVATIVE MICRO TECHNOLOGY

    Inventor： ZEYEN, Benedikt ,  PATIL, Vikram

    IPC: H01L21/00

    CPC classification number: H01H59/0009 ,  B81C1/00333 ,  H01H49/00 ,  H03H9/1057

    Abstract: A method for forming a cavity in a microfabricated structure, includes the sealing of that cavity with a low temperature solder. The method may include forming a sacrificial layer over a substrate, forming a flexible membrane over the sacrificial layer, forming a release hole through a flexible membrane to the sacrificial layer, introducing an etchant through the release hole to remove the sacrificial layer, and then sealing that release hole with a low temperature solder.

    Abstract translation: 用于在微细结构中形成空腔的方法包括用低温焊料密封该空腔。 该方法可以包括在衬底上形成牺牲层，在牺牲层上形成柔性膜，通过柔性膜形成到牺牲层的释放孔，通过释放孔引入蚀刻剂以去除牺牲层，然后密封 该释放孔与低温焊料。

    DUAL SUBSTRATE MEMS PLATE SWITCH AND METHOD OF MANUFACTURE
    104.
    发明申请
    DUAL SUBSTRATE MEMS PLATE SWITCH AND METHOD OF MANUFACTURE 审中-公开
    双基板MEMS板开关及其制造方法

    公开(公告)号：WO2008140668A1

    公开(公告)日：2008-11-20

    申请号：PCT/US2008/005267

    申请日：2008-04-24

    Applicant: INNOVATIVE MICRO TECHNOLOGY ,  FOSTER, John, S. ,  TURNER, Kimberly, L.

    Inventor： FOSTER, John, S. ,  TURNER, Kimberly, L.

    IPC: H01F7/08

    CPC classification number: H01H59/0009 ,  B81B2201/018 ,  B81C1/00333 ,  Y10T29/49105 ,  Y10T29/5317

    Abstract: Systems and methods for forming an electrostatic MEMS plate switch include forming a deformable plate on a first substrate, forming the electrical contacts on a second substrate, and coupling the two substrates using a hermetic seal. The deformable plate may have at least one shunt bar located at a nodal line of a vibrational mode of the deformable plate, so that the shunt bar remains relatively stationary when the plate is vibrating in that vibrational mode. The hermetic seal may be a gold/indium alloy, formed by heating a layer of indium plated over a layer of gold. Electrical access to the electrostatic MEMS switch may be made by forming vias through the thickness of the second substrate.

    Abstract translation: 用于形成静电MEMS板开关的系统和方法包括在第一衬底上形成可变形板，在第二衬底上形成电触点，并使用气密密封来连接两个衬底。 可变形板可以具有位于可变形板的振动模式的节点线处的至少一个分流杆，使得当板在该振动模式下振动时，分流棒保持相对静止。 气密密封可以是金/铟合金，通过加热镀在一层金上的铟层而形成。 可以通过形成穿过第二基板的厚度的通孔来进行对静电MEMS开关的电接入。

    LID STRUCTURE FOR MICRODEVICE AND METHOD OF MANUFACTURE
    105.
    发明申请
    LID STRUCTURE FOR MICRODEVICE AND METHOD OF MANUFACTURE 审中-公开
    MICRODEVICE的LID结构及其制造方法

    公开(公告)号：WO2008136930A1

    公开(公告)日：2008-11-13

    申请号：PCT/US2008/005268

    申请日：2008-04-24

    Applicant: INNOVATIVE MICRO TECHNOLOGY ,  HOVEY, Steven, H. ,  NGUYEN, Hug, D.

    Inventor： HOVEY, Steven, H. ,  NGUYEN, Hug, D.

    IPC: H01L23/02

    CPC classification number: G02B1/118 ,  B81B2201/047 ,  B81C1/00317 ,  B81C2201/019 ,  B81C2203/0109 ,  H01L23/04 ,  H01L33/483 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A system and a method are described for forming features at the bottom of a cavity in a substrate. Embodiments of the systems and methods provide an infrared transmitting, hermetic lid for a microdevice. The lid may be manufactured by first forming small, subwavelength features on a surface of an infrared transmitting substrate, and coating the subwavelength features with an etch stop material. A spacer wafer is then bonded to the infrared transmitting substrate, and a device cavity is etched into the spacer wafer down to the etch stop material, exposing the subwavelength features. The etch stop material may then be removed, and the microdevice enclosed in the device cavity, by bonding the device wafer to the lid.

    Abstract translation: 描述了用于在衬底中的空腔底部形成特征的系统和方法。 该系统和方法的实施例提供了用于微型装置的红外透射密封盖。 可以通过首先在红外线透射基板的表面上形成小的亚波长特征并用蚀刻停止材料涂覆亚波长特征来制造盖子。 然后将间隔晶片接合到红外线传输基板，并且将器件空腔蚀刻到间隔晶片中直到蚀刻停止材料，暴露亚波长特征。 然后可以通过将器件晶片结合到盖子上来去除蚀刻停止材料，并且将微器件封装在器件空腔中。

    HYSTERETIC MEMS THERMAL DEVICE AND METHOD OF MANUFACTURE
    106.
    发明申请
    HYSTERETIC MEMS THERMAL DEVICE AND METHOD OF MANUFACTURE 审中-公开
    HYSTERETIC MEMS THERMAL DEVICE AND METHODS MANUFACTURE

    公开(公告)号：WO2007084341A2

    公开(公告)日：2007-07-26

    申请号：PCT/US2007/000765

    申请日：2007-01-12

    Applicant: INNOVATIVE MICRO TECHNOLOGY ,  RUBEL, Paul, J.

    Inventor： RUBEL, Paul, J.

    IPC: H02N10/00

    CPC classification number: H02N10/00 ,  F03G7/06 ,  H01H61/02 ,  H01H61/04 ,  H01H2001/0047 ,  H01H2001/0068 ,  H01H2061/006 ,  H01H2061/008 ,  Y10T29/42 ,  Y10T29/49155 ,  Y10T29/49204

    Abstract: A MEMS hysteretic thermal device may have a cantilevered beam which bends about one or more points in at least two substantially different directions. In one exemplary embodiment, the MEMS hysteretic thermal device is made from a first segment coupled to an anchor point, and also coupled to a second segment by a joint. Heating two respective drive beams causes the first segment to bend in a direction substantially about th& anchor point and the second segment to bend in a direction substantially about the joint. By cooling the first drive beam faster than the second drive beam, the motion of the MEMS thermal device may be hysteretic. The MEMS hysteretic thermal device may be used for example, as an electrical switch or as a valve or piston.

    Abstract translation: MEMS迟滞热装置可以具有悬臂梁，其在至少两个基本上不同的方向上围绕一个或多个点弯曲。 在一个示例性实施例中，MEMS滞后热装置由耦合到锚定点的第一段制成，并且还通过接头耦合到第二段。 加热两个相应的驱动梁使得第一段在基本上约th和锚点的方向上弯曲，而第二段在基本上围绕接头的方向上弯曲。 通过比第二驱动光束更快地冷却第一驱动光束，MEMS热装置的运动可能是滞后的。 MEMS迟滞热装置可以例如用作电开关或阀或活塞。

    METHOD FOR FORMING THROUGH SUBSTRATE VIAS
    109.
    发明申请
    METHOD FOR FORMING THROUGH SUBSTRATE VIAS 审中-公开
    通过基板VIAS形成的方法

    公开(公告)号：WO2016053584A1

    公开(公告)日：2016-04-07

    申请号：PCT/US2015/049057

    申请日：2015-09-09

    Applicant: INNOVATIVE MICRO TECHNOLOGY

    Inventor： HARLEY, John, C.

    IPC: H01L21/768

    CPC classification number: H01L21/76898 ,  B81C1/00301 ,  H01L2224/02372 ,  H01L2224/05548

    Abstract: A method for forming through silicon vias (TSVs) in a silicon substrate is disclosed. The method involves forming a silicon post as an annulus in a first side of a silicon substrate, removing material from an opposite side to the level of the annulus, removing the silicon post and replacing it with a metal material to form a metal via extending through the thickness of the substrate.

    Abstract translation: 公开了一种在硅衬底中形成硅通孔（TSV）的方法。 该方法包括在硅衬底的第一侧中形成硅柱作为环状空间，从与环空的水平面相反的一侧去除材料，去除硅柱并用金属材料代替它，以通过延伸通过 基板的厚度。

    WAFER LEVEL HERMETIC BOND USING METAL ALLOY WITH RAISED FEATURE AND WETTING LAYER
    110.
    发明申请
    WAFER LEVEL HERMETIC BOND USING METAL ALLOY WITH RAISED FEATURE AND WETTING LAYER 审中-公开
    使用金属合金加成的特征和湿润层的波浪水平粘结

    公开(公告)号：WO2015134212A1

    公开(公告)日：2015-09-11

    申请号：PCT/US2015/017023

    申请日：2015-02-23

    Applicant: INNOVATIVE MICRO TECHNOLOGY

    Inventor： GUDEMAN, Christopher, S. ,  PROSENJIT SEN, Prosenjit

    IPC: H01L21/56

    CPC classification number: B81C1/00269 ,  B81C1/00849 ,  B81C2203/019

    Abstract: Systems and methods for forming an encapsulated device include a substantially hermetic seal which seals a device in an environment between two substrates. The substantially hermetic seal is formed by an alloy of two metal layers, one having a lower melting temperature than the other. The metal layers may be deposited two substrates, along with a raised feature formed under at least one of the metal layers. The two metals may form an alloy of a predefined stoichiometry in at least two locations on either side of the midpoint of the raised feature. The formation of the alloy may be improved by the use of an organic wetting layer adjacent to the lower melting temperature metal. Design guidelines are set forth for reducing or eliminating the leakage of molten metal into the areas adjacent to the bondlines.

    Abstract translation: 用于形成封装装置的系统和方法包括在两个基板之间的环境中密封装置的基本上气密的密封。 基本上气密的密封由两个金属层的合金形成，一个熔化温度低于另一个。 金属层可以沉积两个基底，以及形成在至少一个金属层下面的凸起特征。 两种金属可以在凸起特征的中点的任一侧上的至少两个位置中形成预定化学计量的合金。 可以通过使用与较低熔点金属相邻的有机润湿层来改善合金的形成。 阐述了设计准则，以减少或消除熔融金属泄漏到与粘接线相邻的区域。

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