公开(公告)号：US09906354B2

公开(公告)日：2018-02-27

申请号：US14254343

申请日：2014-04-16

Applicant: RF Micro Devices, Inc.

Inventor： Nadim Khlat

IPC: H04L5/14 ,  H04B1/00 ,  H04B1/10 ,  H04L5/08

CPC classification number: H04L5/1461 ,  H04B1/006 ,  H04B1/0064 ,  H04B1/1027 ,  H04B2001/1072 ,  H04L5/08 ,  H04L5/14

Abstract: The disclosure includes communication circuitry with a tunable filter configured to tunably filter in a split band. In a first embodiment, communication circuitry includes a tunable filter and a first additional filter. The communication circuitry is configured to communicate within a low target band and within a high target band, wherein an exclusion band is located between the low target band and the high target band. The tunable filter is configured to filter within a low tunable band when tuned within the low tunable band, and configured to filter within a high tunable band when tuned within the high tunable band. The first additional filter is configured to filter in a first additional filter band located in an upper edge of the low target band.

公开(公告)号：US09893709B2

公开(公告)日：2018-02-13

申请号：US14673192

申请日：2015-03-30

Applicant: RF Micro Devices, Inc.

Inventor： Nadim Khlat ,  Marcus Granger-Jones

IPC: H03H7/46 ,  H03H9/70 ,  H03H7/01 ,  H01P5/22 ,  H03H9/72 ,  H04B1/525 ,  H04B1/58

CPC classification number: H03H7/46 ,  H01P5/22 ,  H01P5/227 ,  H03H7/0138 ,  H03H7/463 ,  H03H9/706 ,  H03H9/725 ,  H04B1/525 ,  H04B1/58

Abstract: RF circuitry, which includes a first hybrid RF coupler, a second hybrid RF coupler, a third hybrid RF coupler, and RF filter circuitry, is disclosed. The first hybrid RF coupler provides a first main port, a first pair of quadrature ports, and an isolation port. The second hybrid RF coupler provides a second main port and a second pair of quadrature ports. The third hybrid RF coupler provides a third main port and a third pair of quadrature ports. RF filter circuitry is coupled to the first pair of quadrature ports, the second pair of quadrature ports, and the third pair of quadrature ports. The first main port, the second main port, and the third main port provide main ports of the RF triplexer. The isolation port is a common port of the RF triplexer for coupling to an RF antenna.

公开(公告)号：US09871499B2

公开(公告)日：2018-01-16

申请号：US14554943

申请日：2014-11-26

Applicant: RF Micro Devices, Inc.

Inventor： George Maxim ,  Dirk Robert Walter Leipold ,  Baker Scott

IPC: H03H7/01 ,  H03H7/40 ,  H01F17/00 ,  H03F1/56 ,  H03F3/24 ,  H03H7/38

CPC classification number: H03H7/0161 ,  H01F17/0013 ,  H03F1/565 ,  H03F3/245 ,  H03F2200/546 ,  H03H7/0115 ,  H03H7/1708 ,  H03H7/1716 ,  H03H7/1766 ,  H03H7/1775 ,  H03H7/40 ,  H03H2007/386

Abstract: Radio frequency (RF) filter structures and related methods and RF front-end circuitry are disclosed. In one embodiment, an RF filter structure includes a first terminal and a first tunable RF filter path defined between the first terminal and a second terminal. The first tunable RF filter path is tunable to provide impedance matching between the first terminal and the second terminal at a first frequency. The first frequency may be provided within a first frequency band. Additionally, the RF filter structure includes a second tunable RF filter path defined between the first terminal and the second terminal. The second tunable RF filter path is tunable to provide impedance matching between the first terminal and the second terminal at a second frequency. The second frequency may be within a second frequency band. In this manner, the RF filter structure is configured to provide impedance tuning for multiple impedance bands simultaneously.

公开(公告)号：US09865922B2

公开(公告)日：2018-01-09

申请号：US14465142

申请日：2014-08-21

Applicant: RF Micro Devices, Inc.

Inventor： Daniel Charles Kerr ,  Christian Rye Iversen ,  Eric K. Bolton ,  Ruediger Bauder ,  Nadim Khlat

IPC: H01Q5/328 ,  H01Q5/335

CPC classification number: H01Q5/328 ,  H01Q5/335

Abstract: Antenna tuning circuitry includes an antenna tuning node, an antenna tuning switch, and a resonant tuning circuit. The antenna tuning node is coupled to a resonant conduction element of an antenna. The antenna tuning switch and the resonant tuning circuit are coupled in series between the antenna tuning switch and the antenna tuning node, such that the resonant tuning circuit is between the antenna tuning node and the antenna tuning switch. The resonant tuning circuit is configured to resonate at one or more harmonic frequencies generated by the antenna tuning switch such that a high impedance path is formed between the antenna tuning switch and the antenna tuning node at harmonic frequencies generated by the antenna tuning switch. Accordingly, harmonic interference generated by the antenna tuning switch is prevented from reaching the antenna, while simultaneously allowing for tuning of the antenna.

公开(公告)号：US09859863B2

公开(公告)日：2018-01-02

申请号：US14554975

申请日：2014-11-26

Applicant: RF Micro Devices, Inc.

Inventor： George Maxim ,  Dirk Robert Walter Leipold ,  Baker Scott

IPC: H03H7/01 ,  H03H7/46 ,  H03H7/09 ,  H01F17/00 ,  H03F3/195 ,  H03F3/24 ,  H03F3/68

CPC classification number: H03H7/0161 ,  H01F17/0013 ,  H03F3/195 ,  H03F3/245 ,  H03F3/68 ,  H03F2200/168 ,  H03F2200/546 ,  H03H7/0115 ,  H03H7/0153 ,  H03H7/09 ,  H03H7/463

Abstract: Radio frequency (RF) front-end circuitry that includes control circuitry and an RF filter structure that includes a plurality of resonators are disclosed. In one embodiment, a first tunable RF filter path is defined by a first set of the plurality of resonators such that the first tunable RF filter path has a first amplitude and a first phase. A second tunable RF filter path is defined by a second set of the plurality of resonators such that the second tunable RF filter path has a second amplitude and a second phase. To provide antenna diversity and/or beam forming/beam steering, the control circuitry is configured to set a first amplitude difference between the first amplitude and the second amplitude to approximately a first target amplitude difference and set a first phase difference between the first phase and the second phase to approximately a first target phase difference.

公开(公告)号：US09853624B2

公开(公告)日：2017-12-26

申请号：US14939751

申请日：2015-11-12

Applicant: RF Micro Devices, Inc.

Inventor： Benjamin P. Abbott ,  Yiliu Wang

IPC: H03H9/25 ,  H03H9/64 ,  H03H9/02 ,  H03H9/145

CPC classification number: H03H9/02818 ,  H03H9/14582 ,  H03H9/25 ,  H03H9/6433 ,  H03H9/6496

Abstract: A surface acoustic wave (SAW) resonator is provided with reduced rattling at frequencies lower than the resonance value. The SAW resonator includes an interdigital transducer (IDT) on a piezoelectric substrate. The IDT includes a first set of interdigital electrodes distributed between and parallel to the first end of the IDT and the second end of the IDT and a second set of interdigital electrodes interleaved with the first plurality of interdigital electrodes. A first resonant cavity is formed a predetermined distance from the first end of the IDT, and a second resonant cavity is formed a predetermined distance from the second end of the IDT. Additionally, a radio frequency (RF) filter is provided that includes multiple SAW resonators that include the resonant cavities formed a predetermined distance from the first and second ends of the IDT. This RF filter may provide increased bandwidth and reduced insertion loss.

公开(公告)号：US09825656B2

公开(公告)日：2017-11-21

申请号：US14450204

申请日：2014-08-01

Applicant: RF Micro Devices, Inc.

Inventor： George Maxim ,  Dirk Robert Walter Leipold ,  Baker Scott

IPC: H04B1/04 ,  H03F3/24 ,  H04B1/16 ,  H03F3/19 ,  H03F1/56 ,  H03F3/193 ,  H03F3/68 ,  H03F3/72 ,  H03H7/09 ,  H03H7/01

CPC classification number: H04B1/0475 ,  H03F1/565 ,  H03F3/193 ,  H03F3/245 ,  H03F3/68 ,  H03F3/72 ,  H03F2200/111 ,  H03F2200/267 ,  H03F2200/451 ,  H03F2203/7209 ,  H03H7/09 ,  H03H7/1775 ,  H03H2210/025 ,  H04B1/0458

Abstract: RF communications circuitry, which includes a first tunable RF filter and an RF power amplifier (PA), is disclosed. The first tunable RF filter includes a pair of weakly coupled resonators, and receives and filters a first upstream RF signal to provide a first filtered RF signal. The RF PA is coupled to the first tunable RF filter, and receives and amplifies an RF input signal to provide an RF output signal.

公开(公告)号：US09824951B2

公开(公告)日：2017-11-21

申请号：US14851652

申请日：2015-09-11

Applicant: RF Micro Devices, Inc.

Inventor： Dirk Robert Walter Leipold ,  Julio C. Costa ,  Baker Scott

IPC: H01L23/31 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/56 ,  H01L21/683 ,  H01L21/762 ,  H01L23/29 ,  H01L23/367 ,  H01L23/373

CPC classification number: H01L23/3135 ,  H01L21/0217 ,  H01L21/31055 ,  H01L21/31111 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/762 ,  H01L21/76264 ,  H01L23/291 ,  H01L23/293 ,  H01L23/3128 ,  H01L23/367 ,  H01L23/3737 ,  H01L2221/68327 ,  H01L2221/68381 ,  H01L2224/16238 ,  H01L2224/73253 ,  H01L2224/81801 ,  H01L2224/97 ,  H01L2924/15174 ,  H01L2924/15313 ,  H01L2924/18161 ,  H01L2224/81 ,  H01L2924/00014

Abstract: A printed circuit module and methods for manufacturing the same are disclosed. The printed circuit module includes a printed circuit substrate with a thinned die attached to the printed circuit substrate. The thinned die includes at least one device layer over the printed circuit substrate and a buried oxide (BOX) layer over the at least one device layer. A polymer layer is disposed over the BOX layer, wherein the polymer has a thermal conductivity greater than 2 watts per meter Kelvin (W/mK) and an electrical resistivity of greater than 103 Ohm-cm.

公开(公告)号：US09787270B2

公开(公告)日：2017-10-10

申请号：US14554681

申请日：2014-11-26

Applicant: RF Micro Devices, Inc.

Inventor： Baker Scott ,  George Maxim ,  Dirk Robert Walter Leipold

IPC: H03F1/52 ,  H03G3/30 ,  H03F1/02 ,  H03F3/19 ,  H04B1/04 ,  H03F1/32 ,  H03F3/68 ,  H03F1/22 ,  H03F1/56 ,  H03F3/45 ,  H03F3/193

CPC classification number: H03G3/3036 ,  H03F1/0211 ,  H03F1/0272 ,  H03F1/223 ,  H03F1/32 ,  H03F1/523 ,  H03F1/565 ,  H03F3/19 ,  H03F3/193 ,  H03F3/24 ,  H03F3/45179 ,  H03F3/45394 ,  H03F3/68 ,  H03F2200/324 ,  H03F2200/387 ,  H03F2200/451 ,  H03F2200/471 ,  H03F2201/3236 ,  H03G3/3042 ,  H04B1/0475 ,  H04B2001/0408 ,  H04B2001/0416 ,  H04B2001/0425

Abstract: A power amplifier includes an amplifier element and overstress management circuitry coupled to the amplifier element. The overstress management circuitry is configured to detect an overstress condition of the amplifier element and adjust one or more operating parameters of the amplifier element in response to the detection of an overstress condition of the amplifier element. Using the overstress management circuitry prevents damage to the amplifier element that may occur due to uncorrected overstress conditions which may degrade or destroy a gate oxide of the amplifier element. Accordingly, the longevity of the amplifier element is improved.

公开(公告)号：US09774311B2

公开(公告)日：2017-09-26

申请号：US14555371

申请日：2014-11-26

Applicant: RF Micro Devices, Inc.

Inventor： George Maxim ,  Baker Scott ,  Dirk Robert Walter Leipold

IPC: H03H7/01 ,  H03H7/09 ,  H01F17/00 ,  H03F1/56 ,  H03F3/195 ,  H03F3/24 ,  H03F3/68 ,  H03H7/46

CPC classification number: H03H7/0161 ,  H01F17/0013 ,  H03F1/56 ,  H03F3/195 ,  H03F3/245 ,  H03F3/68 ,  H03F2200/111 ,  H03F2200/294 ,  H03F2200/387 ,  H03F2200/411 ,  H03F2200/429 ,  H03F2200/546 ,  H03H7/0115 ,  H03H7/0153 ,  H03H7/09 ,  H03H7/463

Abstract: RF communications circuitry, which includes a first RF filter structure and RF detection circuitry, is disclosed. The first RF filter structure includes a first group of RF resonators, which include a first pair of weakly coupled RF resonators coupled to a signal path of a first RF signal. One of the first group of RF resonators provides a first sampled RF signal. The RF detection circuitry detects the first sampled RF signal to provide a first detected signal. The first RF filter structure adjusts a first filtering characteristic of the first RF filter structure based on the first detected signal.