公开(公告)号：US07386162B1

公开(公告)日：2008-06-10

申请号：US10874498

申请日：2004-06-23

Applicant: Srikanteswara Dakshina-Murthy ,  Bhanwar Singh ,  Ramkumar Subramanian

Inventor： Srikanteswara Dakshina-Murthy ,  Bhanwar Singh ,  Ramkumar Subramanian

IPC: G06K9/00

CPC classification number: G03F7/0002 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/67242

Abstract: The present invention relates generally to photolithographic systems and methods, and more particularly to systems and methodologies that facilitate compensating for imprint mask critical dimension error(s). An aspect of the invention generates feedback information that facilitates control of imprint mask critical dimension via employing a scatterometry system to detect imprint mask critical dimension error, and mitigating the error via a spacer etchback procedure.

Abstract translation: 本发明一般涉及光刻系统和方法，更具体地涉及有助于补偿压印掩模临界尺寸误差的系统和方法。 本发明的一个方面产生反馈信息，其通过使用散射测量系统来检测压印掩模临界尺寸误差并通过间隔回蚀程序来减轻误差，从而有助于控制压印掩模临界尺寸。

公开(公告)号：US07376259B1

公开(公告)日：2008-05-20

申请号：US10874499

申请日：2004-06-23

Applicant: Srikanteswara Dakshina-Murthy ,  Bhanwar Singh ,  Ramkumar Subramanian

Inventor： Srikanteswara Dakshina-Murthy ,  Bhanwar Singh ,  Ramkumar Subramanian

IPC: G06K9/00

CPC classification number: G03F7/0002 ,  B82Y10/00 ,  B82Y40/00

Abstract: The present invention relates generally to photolithographic systems and methods, and more particularly to systems and methodologies that modify an imprint mask. An aspect of the invention generates feedback information that facilitates control of imprint mask feature height via employing a scatterometry system to detect topography variation and, decreasing imprint mask feature height in order to compensate for topography variation.

Abstract translation: 本发明一般涉及光刻系统和方法，更具体地涉及修改压印掩模的系统和方法。 本发明的一个方面产生反馈信息，其通过使用散射测量系统来检测地形变化和减小压印掩模特征高度以便补偿地形变化，从而有助于控制印迹掩模特征高度。

公开(公告)号：US07374654B1

公开(公告)日：2008-05-20

申请号：US10978845

申请日：2004-11-01

Applicant: Mark S. Chang ,  Sergey D. Lopatin ,  Ramkumar Subramanian

Inventor： Mark S. Chang ,  Sergey D. Lopatin ,  Ramkumar Subramanian

IPC: C25F3/00 ,  C25F7/00 ,  C25D5/18 ,  C25D5/10 ,  B23H7/00

CPC classification number: C23C28/00 ,  G11C13/0014 ,  G11C13/0016 ,  G11C2213/56 ,  H01L27/285

Abstract: A method of making an organic memory cell which comprises two electrodes with a controllably conductive media between the two electrodes is disclosed. The present invention involves providing a dielectric layer having formed therein one or more first electrode pads; removing a portion of the first electrode pad to form a recessed area on top of the pads and in the dielectric layer using reverse electroplating; forming a controllably conductive media over the first electrode pad in the recessed area; and forming a second electrode over the conductive media. The controllably conductive media contains an organic semiconductor layer and a passive layer.

Abstract translation: 公开了一种制造有机存储单元的方法，该方法包括在两个电极之间具有可控导电介质的两个电极。 本发明涉及提供在其中形成有一个或多个第一电极焊盘的电介质层; 去除所述第一电极焊盘的一部分以在所述焊盘的顶部和所述电介质层中使用反向电镀形成凹陷区域; 在所述凹陷区域中的所述第一电极焊盘上形成可控导电介质; 以及在所述导电介质上形成第二电极。 可控导电介质包含有机半导体层和无源层。

公开(公告)号：US07368225B1

公开(公告)日：2008-05-06

申请号：US10925123

申请日：2004-08-24

Applicant: Ramkumar Subramanian ,  Scott A. Bell ,  Todd P. Lukanc ,  Marina V. Plat ,  Uzodinma Okoroanyanwu ,  Hung-Eil Kim

Inventor： Ramkumar Subramanian ,  Scott A. Bell ,  Todd P. Lukanc ,  Marina V. Plat ,  Uzodinma Okoroanyanwu ,  Hung-Eil Kim

IPC: G03F7/00

CPC classification number: G03F1/00 ,  H01L21/76816

Abstract: There is provided a method of making plurality of features in a first layer. A photoresist layer is formed over the first layer. Dense regions in the photoresist layer are exposed through a first mask under a first set of illumination conditions. Isolated regions in the photoresist layer are exposed through a second mask different from the first mask under a second set of illumination conditions different from the first set of illumination conditions. The exposed photoresist layer is patterned and then the first layer is patterned using the patterned photoresist layer as a mask.

Abstract translation: 提供了在第一层中制作多个特征的方法。 在第一层上形成光致抗蚀剂层。 光致抗蚀剂层中的密集区域在第一组照射条件下通过第一掩模曝光。 在与第一组照明条件不同的第二组照明条件下，光致抗蚀剂层中的隔离区域通过不同于第一掩模的第二掩模曝光。 曝光的光致抗蚀剂层被图案化，然后使用图案化的光致抗蚀剂层作为掩模来对第一层进行图案化。

公开(公告)号：US07310155B1

公开(公告)日：2007-12-18

申请号：US10958149

申请日：2004-10-04

Applicant: Luigi Capodieci ,  Amit P. Marathe ,  Bhanwar Singh ,  Ramkumar Subramanian

Inventor： Luigi Capodieci ,  Amit P. Marathe ,  Bhanwar Singh ,  Ramkumar Subramanian

IPC: G01B11/04 ,  G01B11/14

CPC classification number: G01B11/303 ,  G01N21/47 ,  G01N21/9501

Abstract: A system that facilitates extraction of line edge roughness measurements that are independent of proprietorship of a metrology device comprises a structure patterned onto silicon with known line edge roughness values associated therewith. A metrology device obtains line edge roughness measurements from the structure, and a correcting component generates an inverse function based upon a comparison between the known line edge roughness values and the measured line edge roughness values. The metrology device can thereafter measure line edge roughness upon a second structure patterned on the silicon, and the inverse function can be applied to such measured line edge roughness values to enable obtainment of line edge roughness measurements that are independent of proprietorship of the metrology device.

Abstract translation: 有助于提取独立于计量装置所有权的线边缘粗糙度测量的系统包括利用与其相关联的已知线边缘粗糙度值图案化到硅上的结构。 测量装置从该结构获得线边缘粗糙度测量，并且校正部件基于已知的线边缘粗糙度值与所测量的线边缘粗糙度值之间的比较产生反向函数。 测量装置此后可以在硅上图案化的第二结构上测量线边缘粗糙度，并且可以将反函数应用于这种测量的线边缘粗糙度值，以使得能够获得独立于计量装置所有权的线边缘粗糙度测量。

公开(公告)号：US07305645B1

公开(公告)日：2007-12-04

申请号：US10935488

申请日：2004-09-07

Applicant: Luigi Capodieci ,  Bhanwar Singh ,  Ramkumar Subramanian

Inventor： Luigi Capodieci ,  Bhanwar Singh ,  Ramkumar Subramanian

IPC: G06F17/50 ,  G06K9/00

CPC classification number: G06F17/5077 ,  G06F2217/12 ,  Y02P90/265

Abstract: The present invention is directed towards a system and/or methodology that facilitates controlling routing of blocks on a floor plan in an integrated circuit. A pattern collector receives a partially created routing pattern, and a comparing component makes a comparison between the at least partially created routing pattern with one or more patterns in a library of patterns. Routing is controlled based at least in part upon the comparison.

Abstract translation: 本发明涉及一种便于控制集成电路中的平面图上的块的路由的系统和/或方法。 模式收集器接收部分创建的路由模式，并且比较组件在至少部分创建的路由模式与模式库中的一个或多个模式之间进行比较。 至少部分地基于比较来控制路由。

公开(公告)号：US07289193B1

公开(公告)日：2007-10-30

申请号：US11000654

申请日：2004-12-01

Applicant: Ramkumar Subramanian ,  Bhanwar Singh ,  Khoi A. Phan

Inventor： Ramkumar Subramanian ,  Bhanwar Singh ,  Khoi A. Phan

IPC: G03B27/54 ,  G03B27/42

CPC classification number: G03F7/70341

Abstract: Disclosed are systems and methods that employ a structural framework of cell gratings placed on a wafer surface during an immersion lithography process to restrict motion of the immersion fluid. Thus, when the stepper lens comes in contact with the immersion fluid, a typically stable immersion fluid dynamics can be maintained with the cells during the immersion lithography process. In addition, various monitoring and control systems are employed to regulate stability of the immersion fluid.

Abstract translation: 公开了在浸没光刻工艺期间采用放置在晶片表面上的单元格栅的结构框架以限制浸没流体的运动的系统和方法。 因此，当步进透镜与浸没流体接触时，在浸没光刻工艺期间可以与电池一起保持典型稳定的浸没流体动力学。 此外，采用各种监控系统来调节浸液的稳定性。

公开(公告)号：US07251033B1

公开(公告)日：2007-07-31

申请号：US10858757

申请日：2004-06-02

Applicant: Khoi Phan ,  Bhanwar Singh ,  Bharath Rangarajan ,  Ramkumar Subramanian

Inventor： Khoi Phan ,  Bhanwar Singh ,  Bharath Rangarajan ,  Ramkumar Subramanian

IPC: G01N21/00

CPC classification number: G01N21/94 ,  G01N2021/95676 ,  G03F1/84 ,  G03F7/70916

Abstract: A system and method are provided for detecting contaminants or defects on a reticle in-situ. The system and method provide a system that measures the optical transmission through clear areas on a reticle and determines whether the optical transmission of a reticle has been degraded by contaminants or other defects.

Abstract translation: 提供了一种系统和方法来现场检测标线上的污染物或缺陷。 该系统和方法提供一种系统，其通过掩模版上的清晰区域测量光学透射，并确定掩模版的光学传输是否已被污染物或其他缺陷降解。

公开(公告)号：US07115440B1

公开(公告)日：2006-10-03

申请号：US10957247

申请日：2004-10-01

Applicant: Christopher F. Lyons ,  Ramkumar Subramanian ,  Sergey D. Lopatin ,  James J. Xie ,  Angela T. Hui

Inventor： Christopher F. Lyons ,  Ramkumar Subramanian ,  Sergey D. Lopatin ,  James J. Xie ,  Angela T. Hui

IPC: H01L21/00

CPC classification number: H01L51/0575 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/0016 ,  G11C2213/77 ,  H01L27/285 ,  H01L51/105

Abstract: Disclosed are methods of making memory cells and semiconductor devices containing the memory cells. The methods involve oxidizing a portion of a copper containing electrode to form a copper oxide layer; contacting the copper oxide layer with at least one of a sulfur containing gas or plasma to form a CuS layer; forming an organic semiconductor over the CuS layer; and forming an electrode over the organic semiconductor. Such devices containing the memory cells are characterized by light weight and robust reliability.

Abstract translation: 公开了制造存储单元和包含存储单元的半导体器件的方法。 所述方法包括氧化一部分含铜电极以形成氧化铜层; 使所述氧化铜层与含硫气体或等离子体中的至少一种接触以形成CuS层; 在CuS层上形成有机半导体; 并在有机半导体上形成电极。 包含存储器单元的这种器件的特征在于重量轻和鲁棒的可靠性。

公开(公告)号：US07084988B1

公开(公告)日：2006-08-01

申请号：US09893803

申请日：2001-06-28

Applicant: Bharath Rangarajan ,  Bhanwar Singh ,  Ramkumar Subramanian

Inventor： Bharath Rangarajan ,  Bhanwar Singh ,  Ramkumar Subramanian

IPC: G01B11/24

CPC classification number: H01L22/26

Abstract: A system and method for monitoring the creation of semiconductor features with multi-slope profiles by employing scatterometry is provided. The system includes a wafer partitioned into one or more portions and one or more light sources, each light source directing light to one or more devices etched on a wafer, the devices having multi-sloped profiles. Reflected light is collected and converted into data by a measuring system. The data is indicative of the etching at the one or more portions of the wafer. The measuring system provides the data to a process analyzer that determines whether adjustments to etching components are necessary by comparing the data to stored etch parameter values. The system also includes etching components. At least one etch component corresponds to a portion of the wafer and performs the etching thereof. The process analyzer selectively controls the etch components to promote consistent etching of multi-slope profiles/features to compensate for wafer to wafer variations.

Abstract translation: 提供了一种通过采用散射法来监测具有多斜率分布的半导体特征的创建的系统和方法。 该系统包括分为一个或多个部分和一个或多个光源的晶片，每个光源将光引导到在晶片上蚀刻的一个或多个器件，该器件具有多倾斜轮廓。 反射光被测量系统收集并转换成数据。 数据表示在晶片的一个或多个部分处的蚀刻。 测量系统将数据提供给过程分析仪，通过将数据与存储的蚀刻参数值进行比较来确定是否需要对蚀刻部件进行调整。 该系统还包括蚀刻部件。 至少一个蚀刻部件对应于晶片的一部分并执行其蚀刻。 过程分析器选择性地控制蚀刻部件以促进多斜率分布/特征的一致蚀刻以补偿晶片到晶片的变化。