公开(公告)号：WO2012109629A3

公开(公告)日：2012-10-11

申请号：PCT/US2012024774

申请日：2012-02-11

Applicant: SENSOR ELECTRONIC TECHNOLOGY INC ,  GASKA REMIGIJUS ,  YANG JINWEI ,  SHUR MICHAEL

Inventor： GASKA REMIGIJUS ,  YANG JINWEI ,  SHUR MICHAEL

IPC: H01L33/02

CPC classification number: H01L33/04 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/025 ,  H01L33/12 ,  H01S2301/173

Abstract: A solution for reducing a number of dislocations in an active region of an emitting device is provided. A dislocation bending structure can be included in the emitting device between the substrate and the active region. The dislocation bending structure can be configured to cause dislocations to bend and/or annihilate prior to reaching the active region, e.g., due to the presence of a sufficient amount of strain. The dislocation bending structure can include a plurality of layers with adjacent layers being composed of a material, but with molar fractions of an element in the respective material differing between the two layers. The dislocation bending structure can include at least forty pairs of adjacent layers having molar fractions of an element differing by at least five percent between the adjacent layers.

Abstract translation: 提供了用于减少发射装置的有源区域中的多个位错的解决方案。 位错弯曲结构可以包括在衬底和有源区之间的发射器件中。 位错弯曲结构可以被配置为在到达活性区域之前引起位错弯曲和/或湮灭，例如由于存在足够量的应变。 位错弯曲结构可以包括具有相邻层的多个层，其由材料组成，但是各个材料中的元素的摩尔分数在两层之间不同。 位错弯曲结构可以包括至少四十对相邻层之间相邻层之间具有至少百分之五的摩尔分数的相邻层。

公开(公告)号：WO2012109629A2

公开(公告)日：2012-08-16

申请号：PCT/US2012/024774

申请日：2012-02-11

Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC. ,  GASKA, Remigijus ,  YANG, Jinwei ,  SHUR, Michael

Inventor： GASKA, Remigijus ,  YANG, Jinwei ,  SHUR, Michael

IPC: H01L33/02

CPC classification number: H01L33/04 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/025 ,  H01L33/12 ,  H01S2301/173

Abstract: A solution for reducing a number of dislocations in an active region of an emitting device is provided. A dislocation bending structure can be included in the emitting device between the substrate and the active region. The dislocation bending structure can be configured to cause dislocations to bend and/or annihilate prior to reaching the active region, e.g., due to the presence of a sufficient amount of strain. The dislocation bending structure can include a plurality of layers with adjacent layers being composed of a material, but with molar fractions of an element in the respective material differing between the two layers. The dislocation bending structure can include at least forty pairs of adjacent layers having molar fractions of an element differing by at least five percent between the adjacent layers.

Abstract translation: 提供了一种用于减少发射装置的有源区域中的位错数量的解决方案。 在衬底和有源区之间的发射器件中可以包括位错弯曲结构。 例如，由于存在足够量的应变，位错弯曲结构可以被配置成使位错在到达有源区之前弯曲和/或消灭。 位错弯曲结构可以包括多个层，其中相邻层由材料组成，但是相应材料中的元素的摩尔分数在两个层之间不同。 位错弯曲结构可以包括至少四十对相邻层，这些相邻层具有在相邻层之间相差至少百分之五的元素的摩尔分数。

公开(公告)号：WO2012078849A2

公开(公告)日：2012-06-14

申请号：PCT/US2011/063915

申请日：2011-12-08

Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC. ,  SHATALOV, Maxim, S. ,  DOBRINSKY, Alexander ,  SHUR, Michael ,  GASKA, Remigijus

Inventor： SHATALOV, Maxim, S. ,  DOBRINSKY, Alexander ,  SHUR, Michael ,  GASKA, Remigijus

IPC: H01L33/06 ,  H01L33/04

CPC classification number: H01L33/06 ,  B82Y20/00 ,  H01L33/007 ,  H01L33/12 ,  H01S5/0224 ,  H01S5/0422 ,  H01S5/34333

Abstract: An emitting device including an active region having quantum wells alternating with barriers of varying compositions is provided. The barriers can be composed of a group Ill-nitride based material, in which a molar fraction of one or more of the group III elements in two barriers adjacent to a single quantum well differ by at least one percent. Two barriers adjacent to a single quantum well can have barrier heights differing by at least one percent.

Abstract translation: 提供了一种发射器件，其包括具有与不同组成的阻挡层交替的量子阱的有源区。 障碍物可以由III族氮化物基材料组成，其中与单个量子阱相邻的两个屏障中的III族元素中的一种或多种元素的摩尔分数相差至少一百分之一。 与单个量子阱相邻的两个障碍物可以具有至少百分之一百分比的屏障高度。

公开(公告)号：WO2009117286A2

公开(公告)日：2009-09-24

申请号：PCT/US2009/036761

申请日：2009-03-11

Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC. ,  ZUKAUSKAS, Arturas ,  VAICEKAUSKAS, Rimantas ,  IVANAUSKAS, Feliksas ,  VAIKEVICIUS, Henrikas ,  SHUR, Michael

Inventor： ZUKAUSKAS, Arturas ,  VAICEKAUSKAS, Rimantas ,  IVANAUSKAS, Feliksas ,  VAIKEVICIUS, Henrikas ,  SHUR, Michael

IPC: F21S2/00 ,  G02F1/01 ,  G01J1/10

CPC classification number: H01L33/504

Abstract: The invention relates to phosphor-conversion (PC) sources of white light, which are composed of at least two groups of emitters, such as ultraviolet (UV) light- emitting diodes (LEDs) and wide-band (WB) or narrow-band (NB) phosphors that completely absorb and convert the flux generated by the LEDs to other wavelengths, and to improving the color quality of the white light emitted by such light sources. In particular, embodiments of the present invention describe new 2-4 component combinations of peak wavelengths and bandwidths for white PC LEDs with complete conversion. These combinations are used to provide spectral power distributions that enable lighting with a considerable portion of a high number of spectrophotomethcally calibrated colors rendered almost indistinguishably from a blackbody radiator or daylight illuminant, and which differ from distributions optimized using standard color-rendering assessment procedures based on a small number of test color samples.

Abstract translation: 本发明涉及白光的磷光体转换（PC）源，其由至少两组发射体组成，例如紫外（UV）发光二极管（LED）和宽带（WB）或窄带 （NB）荧光体，其完全吸收并将由LED产生的光束转换成其他波长，并且改善由这种光源发射的白光的颜色质量。 特别地，本发明的实施例描述了具有完全转换的白色PC LED的新的峰值波长和带宽的2-4组分组合。 这些组合用于提供光谱功率分布，其使得相当大部分的分光光度校准颜色几乎与黑体散热器或日光照明器几乎无差别地进行照明，并且与使用基于以下的标准显色评估程序优化的分布不同 少量测试颜色样品。

公开(公告)号：WO2009002919A3

公开(公告)日：2008-12-31

申请号：PCT/US2008/067873

申请日：2008-06-23

Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC. ,  GASKA, Remigijus ,  HU, Xuhong ,  SHUR, Michael

Inventor： GASKA, Remigijus ,  HU, Xuhong ,  SHUR, Michael

IPC: H01L33/00

Abstract: A contact to a semiconductor including sequential layers of Cr, Ti, and Al is provided, which can result in a contact with one or more advantages over Ti/AI- based and Cr/AI-based contacts. For example, the contact can: reduce a contact resistance; provide an improved surface morphology; provide a better contact linearity; and/or require a lower annealing temperature, as compared to the prior art Ti/AI-based contacts.

Abstract translation: 提供了与包括顺序层的Cr，Ti和Al的半导体的接触，这可以导致与基于Ti / Al和Cr / Al的接触相比具有一个或多个优点的接触 。 例如，触点可以：减小接触电阻; 提供改善的表面形态; 提供更好的接触线性; 和/或需要较低的退火温度，与现有技术的基于Ti / Al的接触相比。

公开(公告)号：WO2007103704A3

公开(公告)日：2007-09-13

申请号：PCT/US2007/063030

申请日：2007-03-01

Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC. ,  GASKA, Remigijus ,  BILENKO, Yuriy ,  SHUR, Michael

Inventor： GASKA, Remigijus ,  BILENKO, Yuriy ,  SHUR, Michael

IPC: G01J3/10

Abstract: A solution for suppressing organism growth using ultraviolet radiation generated by solid state ultraviolet radiation emitters, such as ultraviolet diodes is provided. The invention includes a connection structure that includes a plurality of solid state ultraviolet radiation emitters disposed thereon. Each of the plurality of solid state ultraviolet radiation emitters emits ultraviolet radiation having a wavelength less than or equal to four hundred nanometers to harm a target organism that may be present on a surface. In one embodiment, the connection structure comprises a two-dimensional mesh that may be placed adjacent an air filter, incorporated in a cover, and/or moved with respect to a surface, such as the interior of an air duct. In this manner, the invention can suppress and/or prevent the growth of organisms, such as biofilms and mold, in locations that are susceptible to such growth.

公开(公告)号：WO2007095543A3

公开(公告)日：2007-08-23

申请号：PCT/US2007/062073

申请日：2007-02-13

Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC. ,  GASKA, Remigijus ,  SHUR, Michael ,  BILENKO, Yuriy

Inventor： GASKA, Remigijus ,  SHUR, Michael ,  BILENKO, Yuriy

IPC: A61M16/00

Abstract: A solution for sterilizing one or more hollow components of a device, such as a medical device, is provided. Ultraviolet radiation having one or more predominant wavelength(s) and a sufficient dose is generated and directed to an interior side of the hollow component(s). The predominant wavelength(s) is/are selected to harm one or more target organisms that may be present on the interior side. The ultraviolet radiation can be delivered by a structure that is periodically inserted and retracted into the hollow component. The structure can be configured to provide additional cleaning capability, such as suction, for removing matter that may be present in the hollow component.

公开(公告)号：WO2007089360A3

公开(公告)日：2007-08-09

申请号：PCT/US2006/060464

申请日：2006-11-02

Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC. ,  GASKA, Remigijus ,  SHUR, Michael ,  ZHANG, Jianping

Inventor： GASKA, Remigijus ,  SHUR, Michael ,  ZHANG, Jianping

IPC: H01L27/15

Abstract: A light emitting heterostructure and/or device in which the light generating structure is contained within a potential well is provided. The potential well is configured to contain electrons, holes, and/or electron and hole pairs within the light generating structure. A phonon engineering approach can be used in which a band structure of the potential well and/or light generating structure is designed to facilitate the emission of polar optical phonons by electrons entering the light generating structure. To this extent, a difference between an energy at a top of the potential well and an energy of a quantum well in the light generating structure can be resonant with an energy of a polar optical phonon in the light generating structure material. The energy of the quantum well can comprise an energy at the top of the quantum well, an electron ground state energy, and/or the like.

公开(公告)号：WO2006062880A2

公开(公告)日：2006-06-15

申请号：PCT/US2005/043866

申请日：2005-12-05

Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC. ,  GASKA, Remigijus ,  ZHANG, Jianping ,  SHUR, Michael

Inventor： GASKA, Remigijus ,  ZHANG, Jianping ,  SHUR, Michael

IPC: H01L31/109

CPC classification number: H01L33/06 ,  B82Y20/00 ,  H01L33/32 ,  H01S5/105 ,  H01S5/2009 ,  H01S5/3216 ,  H01S5/3407 ,  H01S5/3415 ,  H01S5/34333 ,  H01S5/34346

Abstract: An improved nitride-based light emitting heterostructure is provided. The nitride-based light emitting heterostructure includes an electron supply layer and a hole supply layer with a light generating structure disposed there between. The light generating structure includes a set of barrier layers, each of which has a graded composition and a set of quantum wells, each of which adjoins at least one barrier layer. Additional features, such as a thickness of each quantum well, can be selected/incorporated into the heterostructure to improve one or more of its characteristics. Further, one or more additional layers that include a graded composition can be included in the heterostructure outside of the light generating structure. The graded composition layer(s) cause electrons to lose energy prior to entering a quantum well in the light generating structure, which enables the electrons to recombine with holes more efficiently in the quantum well.

Abstract translation: 提供了一种改进的基于氮化物的发光异质结构。 氮化物系发光异质结构包括电子供给层和在其间设置有发光结构的空穴供给层。 光产生结构包括一组阻挡层，每个阻挡层具有梯度组成和一组量子阱，每个量子阱邻接至少一个势垒层。 诸如每个量子阱的厚度的其它特征可以被选择/并入到异质结构中以改善其一个或多个特性。 此外，包括渐变组合物的一个或多个附加层可以包含在发光结构外部的异质结构中。 渐变组分层在光生成结构中进入量子阱之前导致电子失去能量，这使得电子能够在量子阱中更有效地与空穴重新结合。

公开(公告)号：DE202015009236U1

公开(公告)日：2016-12-27

申请号：DE202015009236

申请日：2015-03-06

Applicant: SENSOR ELECTRONIC TECHNOLOGY INC

IPC: A61L2/10

Abstract: Gerät, aufweisend: einen Ultraviolett-transparenten Bildschirm, wobei eine Außenfläche des Ultraviolett-transparenten Bildschirms für einen Benutzer des Gerätes zugänglich ist; eine Abdeckung, die zum Bedecken des Ultraviolett-transparenten Bildschirms konfiguriert ist, wobei eine der Außenfläche des Ultraviolett-transparenten Bildschirms gegenüberliegende Innenfläche der Abdeckung reflektierend ist, wobei die Abdeckung eine Vielzahl von Rippen enthält, die sich von derselben erstrecken, wobei jede Rippe von einer benachbarten Rippe durch einen vorbestimmten Zwischenraum getrennt ist, wobei jede Rippe einen separaten Abschnitt der Außenfläche des Ultraviolett-transparenten Bildschirms in Erwiderung darauf berührt, dass sich die Abdeckung in einer geschlossenen Stellung befindet, so dass sich eine Luftschicht zwischen der Abdeckung und dem Ultraviolett-transparenten Bildschirm in jedem zwischen benachbarten Rippen gebildeten Zwischenraum befindet; einen Satz Ultraviolettstrahlungsquellen, der eine Stelle aufweist, die zumindest innerhalb eines inneren Abschnitts des Ultraviolett-transparenten Bildschirms nahe einer Seitenkante desselben und/oder in einer vertikalen Orientierung eine Innenfläche des Ultraviolett-transparenten Bildschirms oder die Außenfläche desselben berührend enthält, wobei der Satz Ultraviolettstrahlungsquellen zum Erzeugen einer in Richtung der Außenfläche des Ultraviolett-transparenten Bildschirms gerichteten Ultraviolettstrahlung konfiguriert ist; eine diffusiv reflektierende Schicht, die zwischen dem Ultraviolett-transparenten Bildschirm und der Abdeckung angeordnet ist, wobei jede Rippe einen separaten Abschnitt der diffusiv reflektierenden Schicht in Erwiderung darauf berührt, dass sich die Abdeckung in einer geschlossenen Stellung befindet, so dass sich eine Luftschicht zwischen der Abdeckung und der diffusiv reflektierenden Schicht in jedem Zwischenraum befindet, der zwischen benachbarten Rippen gebildet ist, wobei die diffusiv reflektierende Schicht konfiguriert ist, um von dem Satz Ultraviolettstrahlungsquellen emittierte Strahlung über den ganzen Ultraviolett-transparenten Bildschirm diffusiv zurückzureflektieren und die emittierte Strahlung in Richtung der Abdeckung teilweise zu transmittieren, wobei die teilweise transmittierte Strahlung in Richtung von zumindest einem der Zwischenräume gelenkt wird, wobei die teilweise transmittierte Strahlung von einer Grenzfläche mit dem zumindest einen Zwischenraum der Zwischenräume durch die diffusiv reflektierende Schicht hindurch zu dem Ultraviolett-transparenten Bildschirm zur Desinfektion desselben reflektiert wird; und ein Überwachungs- und Steuersystem, das sich in einem inneren Abschnitt des Gerätes befindet, zum Managen der Ultraviolettstrahlung durch Durchführen eines Verfahrens, das Folgendes aufweist: Überwachen eines Satzes Attribute in Bezug auf die Außenfläche des Ultraviolett-transparenten Bildschirms; und Steuern der auf die Außenfläche des Ultraviolett-transparenten Bildschirms gerichteten Ultraviolettstrahlung basierend auf der Überwachung.