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    OPTOELEKTRONISCHER HALBLEITERCHIP
    101.
    发明公开
    OPTOELEKTRONISCHER HALBLEITERCHIP 审中-公开

    公开(公告)号：EP2415085A1

    公开(公告)日：2012-02-08

    申请号：EP10707304.1

    申请日：2010-03-10

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： AVRAMESCU, Adrian, Stefan ,  QUEREN, Désirée ,  EICHLER, Christoph ,  SABATHIL, Matthias ,  LUTGEN, Stephan ,  STRAUSS, Uwe

    IPC: H01L33/32 ,  H01L33/06

    CPC classification number: H01L33/06 ,  B82Y20/00 ,  H01L33/32 ,  H01L2924/0002 ,  H01S5/3407 ,  H01S5/3425 ,  H01S5/34333 ,  H01S2301/173 ,  Y10S977/95 ,  Y10S977/951 ,  H01L2924/00

    Abstract: In at least one embodiment of the optoelectronic semiconductor chip (1), said chip is based on a nitride material system and comprises at least one active quantum well (2). The at least one active quantum well (2) is designed to generate electromagnetic radiation during operation. Furthermore, in a direction parallel to a growth direction z of the semiconductor chip (1), the at least one active quantum well (2) has N successive zones (A), where N is a natural number higher than or equal to 2. At least two of the zones (A) of the active quantum well (2) have average indium contents c that are different from each other.

    Abstract translation: 在光电子半导体芯片（1）的至少一个实施例中，所述芯片基于氮化物材料系统并且包括至少一个有源量子阱（2）。 该至少一个有源量子阱（2）被设计成在操作期间产生电磁辐射。 此外，在与半导体芯片（1）的生长方向z平行的方向上，所述至少一个有源量子阱（2）具有N个连续区域（A），其中N是大于或等于2的自然数。 有源量子阱（2）的至少两个区（A）具有彼此不同的平均铟含量c。

    LEUCHTDIODE
    102.
    发明公开
    LEUCHTDIODE 有权
    发光二极管

    公开(公告)号：EP2412021A1

    公开(公告)日：2012-02-01

    申请号：EP10710274.1

    申请日：2010-03-15

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： SABATHIL, Matthias ,  KOCUR, Simon ,  GRÖTSCH, Stefan

    IPC: H01L25/075 ,  H01L33/08 ,  H01L33/22 ,  H01L33/58

    CPC classification number: H01L25/0756 ,  H01L33/08 ,  H01L33/22 ,  H01L33/382 ,  H01L33/502 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The invention relates to a light diode having a first semiconductor element (10) that comprises at least one active region (11) that is contacted electrically, wherein electromagnetic radiation (110) of a first wavelength region is created in the active region (11) in operation of the light diode, and a second semiconductor element (20) that is fastened on the first semiconductor element (10) to the top side (10a) of the first semiconductor element (10), wherein the second semiconductor element (20) has a re-emission region (21) having a multiple quantum well structure (213) and wherein electromagnetic radiation (110) of the first wavelength region is absorbed and electromagnetic radiation of a second wavelength region (220) is re-emitted in the re-emission region (21) in operation of the light diode, and a connection material (30) that is arranged between the first (10) and second semiconductor element (20), wherein the connection material (30) connects the first (10) and the second semiconductors (20) to one another mechanically.

    OPTOELEKTRONISCHER HALBLEITERKÖRPER
    103.
    发明公开
    OPTOELEKTRONISCHER HALBLEITERKÖRPER 有权
    OPTOELEKTRONISCHERHALBLEITERKÖRPER

    公开(公告)号：EP2340568A1

    公开(公告)日：2011-07-06

    申请号：EP09741206.8

    申请日：2009-09-30

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： ENGL, Karl ,  SABATHIL, Matthias

    IPC: H01L33/00 ,  H01L27/15 ,  H01L33/38 ,  H01L33/22 ,  H01L33/62

    CPC classification number: H01L33/382 ,  H01L33/22 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: An optoelectronic semi-conductor body is provided, having a semi-conductor layer sequence (1), which has an active layer (100) suited for generating electromagnetic radiation, and a first electric connecting layer (4). The semiconductor body is provided for emitting electromagnetic radiation from a front face (2). The semiconductor layer sequence (1) comprises at least one opening (110), which extends completely through the semiconductor layer sequence (1) from the front face (2) to a back face (3) opposite the front face (2). The first electric connecting layer (4) is disposed on the back face (3) of the semiconductor body, a partial piece (40) of the first electric connecting layer (4) runs from the back face (3) through the opening (110) to the front face (2) and covers a first partial region (11) of a front main surface (10) of the semiconductor layer sequence (1). A second partial region (12) of the front main surface (10) is not covered by the first electric connecting layer (4).

    Abstract translation: 公开了一种具有半导体层序列（1）的光电半导体本体，包括适于产生电磁辐射的有源层（100）的半导体层序列和第一电接触层（4）。 光电半导体本体被设置为用于从前侧（2）发射电磁辐射。 所述半导体层序列（1）包括至少一个开口（110），所述至少一个开口（110）在从所述正面（2）到与所述前侧（2）相反的方向上从所述半导体层序列（1） 2）。 第一电接触层（4）布置在半导体本体的后部（3）处，第一电接触层（4）的部分（40）从后侧（3）延伸穿过开口（110）至 所述前侧（2）并且覆盖所述半导体层序列（1）的前侧主面（10）的第一子区域（11）。 前侧主面（10）的第二子区域（12）不被第一电接触层（4）覆盖。

    OPTOELEKTRONISCHER HALBLEITERKÖRPER MIT TUNNELÜBERGANG UND VERFAHREN ZUR HERSTELLUNG EINES SOLCHEN
    104.
    发明公开
    OPTOELEKTRONISCHER HALBLEITERKÖRPER MIT TUNNELÜBERGANG UND VERFAHREN ZUR HERSTELLUNG EINES SOLCHEN 审中-公开
    与隧道过渡和方法光电子半导体本体，其制造方法

    公开(公告)号：EP2248192A1

    公开(公告)日：2010-11-10

    申请号：EP09715687.1

    申请日：2009-02-26

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： STRASSBURG, Martin ,  HÖPPEL, Lutz ,  SABATHIL, Matthias

    IPC: H01L33/00

    CPC classification number: H01L33/04 ,  H01L29/88 ,  H01L33/32 ,  H01L2924/0002 ,  H01S5/0421 ,  H01S5/3095 ,  H01S5/32341 ,  H01L2924/00

    Abstract: The invention specifies an optoelectronic semiconductor body having an epitaxial semiconductor layer sequence which has a tunnel junction (2) and an active layer (4) which is intended to emit electromagnetic radiation. The tunnel junction has an intermediate layer (23) between an n-type tunnel junction layer (21) and a p-type tunnel junction layer (22). In one embodiment, the intermediate layer has an n-type barrier layer (231) facing the n-type tunnel junction layer, a p-type barrier layer (233) facing the p-type tunnel junction layer and a middle layer (232). The material composition of the middle layer differs from the material composition of the n-type barrier layer and the p-type barrier layer. In another embodiment, the intermediate layer (23) is alternatively or additionally deliberately provided with defects (6). A method for producing such an optoelectronic semiconductor body is also specified.

    OPTOELEKTRONISCHES BAUELEMENT
    105.
    发明公开
    OPTOELEKTRONISCHES BAUELEMENT 有权
    OPTOELEKTRONISCHES宝石

    公开(公告)号：EP2191547A1

    公开(公告)日：2010-06-02

    申请号：EP08801251.3

    申请日：2008-08-29

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： SABATHIL, Matthias ,  BRICK, Peter ,  EICHLER, Christoph

    IPC: H01S5/04 ,  H01S5/34 ,  H01S5/40

    CPC classification number: H01S5/041 ,  B82Y20/00 ,  H01S5/026 ,  H01S5/34 ,  H01S5/4043

    Abstract: An optoelectronic component (1) is specified, comprising a semiconductor body (2) having a semiconductor layer sequence. The semiconductor layer sequence of the semiconductor body (2) has a pump region (3) provided for generating a pump radiation, and an emission region (4) provided for generating an emission radiation. The emission region (4) and the pump region (3) are arranged one above the other. The pump radiation optically pumps the emission region (4) during the operation of the optoelectronic component (1). The emission radiation emerges in a lateral direction from the semiconductor body (2) having the semiconductor layer sequence during the operation of the optoelectronic component (1).

    Abstract translation: 提供了一种光电子器件（1），包括具有半导体层序列的半导体本体（2）。 半导体本体（2）的半导体层序列具有用于产生泵浦辐射的泵浦区域（3）和用于产生发射辐射的发射区域（4）。 发射区域（4）和泵区域（3）一个在另一个之上布置。 泵浦辐射在光电子器件（1）的操作期间光学泵浦发射区域（4）。 发射辐射在光电子器件（1）的操作期间从具有半导体层序列的半导体本体（2）横向出现。

    OPTOELEKTRONISCHER HALBLEITERKÖRPER UND VERFAHREN ZUR HERSTELLUNG EINES SOLCHEN
    106.
    发明公开
    OPTOELEKTRONISCHER HALBLEITERKÖRPER UND VERFAHREN ZUR HERSTELLUNG EINES SOLCHEN 有权
    OPTOELEKTRONISCHERHALBLEITERKÖRPERUND VERFAHREN ZUR HERSTELLUNG EINES SOLCHEN

    公开(公告)号：EP2149159A1

    公开(公告)日：2010-02-03

    申请号：EP08748775.7

    申请日：2008-04-24

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： ENGL, Karl ,  RODE, Patrick ,  HÖPPEL, Lutz ,  SABATHIL, Matthias

    IPC: H01L33/00

    CPC classification number: H01L33/58 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/382 ,  H01L33/405 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The invention relates to an opto-electronic semiconductor body having a semiconductor layer sequence (2) comprising an active layer (23) suitable for generating electromagnetic radiation and a first and a second electrical connection layer (4, 6), wherein the semiconductor body is intended for the emission of electromagnetic radiation from a front side, the first and second electrical connection layers being located on a rear side opposite the front side and electrically insulated from each other by means of a separating layer (5), the first electrical connection layer (4), second electrical connection layer (6), and the separating layer (5) laterally overlapping each other, and a partial area of the second electrical connection layer (6) extending from the rear side through a penetration (3) through the active layer (23) in the direction of the front side. The invention further relates to a method for producing such an opto-electronic semiconductor body.

    Abstract translation: 本发明涉及一种具有半导体层序列（2）的光电半导体本体，所述半导体层序列包括适于产生电磁辐射的有源层（23）以及第一和第二电连接层（4,6），其中所述半导体本体是 用于从前侧发射电磁辐射，所述第一和第二电连接层位于与所述前侧相对的后侧上并且借助于分离层（5）彼此电绝缘，所述第一电连接层 ，所述第二电连接层（6）和所述分离层（5）彼此横向地重叠，并且所述第二电连接层（6）的部分区域从所述后侧穿过所述穿透部 有源层（23）在前侧的方向上。 本发明还涉及用于制造这种光电半导体本体的方法。

    LICHTEMITTIERENDE DÜNNFILM-DIODE MIT EINER SPIEGELSCHICHT UND VERFAHREN ZU DEREN HERSTELLUNG
    109.
    发明公开
    LICHTEMITTIERENDE DÜNNFILM-DIODE MIT EINER SPIEGELSCHICHT UND VERFAHREN ZU DEREN HERSTELLUNG 审中-公开
    具有镜面层的发光薄膜二极管及其制造方法

    公开(公告)号：EP3206238A1

    公开(公告)日：2017-08-16

    申请号：EP17159663.8

    申请日：2008-09-04

    Applicant: Osram Opto Semiconductors Gmbh

    Inventor： HAHN, Berthold ,  WEIMAR, Andreas ,  BAUR, Johannes ,  SABATHIL, Matthias ,  PLAINE, Glenn-Yves

    IPC: H01L33/38 ,  H01L33/14 ,  H01L33/40

    Abstract: Die Erfindung betrifft eine Dünnfilm-LED, die eine Barriereschicht (3), eine der Barriereschicht (3) nachfolgende erste Spiegelschicht (2), einen der ersten Spiegelschicht (2) nachfolgenden Schichtstapel (5), und mindestens eine dem Schichtstapel (5) nachfolgende Kontaktstruktur (6) umfasst. Der Schichtstapel (5) weist mindestens eine aktive Schicht (5a) auf, die elektromagnetische Strahlung emittiert. Die Kontaktstruktur (6) ist auf einer Strahlungsaustrittsfläche (4) angeordnet und weist eine Kontaktfläche (7) auf. Die erste Spiegelschicht (2) weist in einem der Kontaktfläche der Kontaktstruktur (6) gegenüberliegenden Bereich eine Aussparung auf, die größer als die Kontaktfläche (7) der Kontaktstruktur (6) ist. Dadurch erhöht sich die Effizienz der Dünnfilm-LED.

    Abstract translation: 本发明涉及一种薄膜LED，一个阻挡层（3），阻挡层（3）随后的第一镜面层（2），第一反射镜层中的一个（2）随后的下列层堆（5），和所述层堆叠中的至少一个（5） 接触结构（6）包括。 叠层（5）具有至少一个发射电磁辐射的有源层（5a）。 接触结构（6）布置在辐射出射表面（4）上并且具有接触表面（7）。 第一镜层（2）在与接触结构（6）的接触表面相对的区域中具有比接触结构（6）的接触表面（7）大的凹部。 这提高了薄膜LED的效率。

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