Abstract:
PROBLEM TO BE SOLVED: To provide a solid-state imaging element capable of suppressing deterioration in image quality due to a leakage current to a photoelectric conversion part.SOLUTION: The solid-state imaging element is configured to comprise: a substrate; a p-type photoelectric conversion part which is formed on the light incident side of the substrate and generates a signal charge corresponding to the quantity of light; a p-type transparent electrode provided on the light incident surface side of the photoelectric conversion part; and an electron barrier layer formed between the photoelectric conversion part and the transparent electrode.
Abstract:
PROBLEM TO BE SOLVED: To provide an imaging apparatus capable of obtaining an image of good quality even under low illuminance.SOLUTION: An infrared light cut-off filter layer 313 provided with an opening part 313a having translucency to visible light and infrared (IR) light and a non-opening part 313b having translucency to visible light and non-translucency to infrared light, and a color filter group 314 for separating the visible light region into the components R, G, and B are disposed integrally on a solid state imaging element 312. A wavelength region pixel 12A detects a wide wavelength region component including the visible light and the IR light having passed through the openings 313a to generate a brightness signal from its detected signal. Each of color pixels 12R, 12G, and 12B detects each of the color components R, G, and B having passed through the non-openings 313b to generate a color difference signal from each color signal. If needed, the color signal from the brightness signal based on the detected signal of the wavelength region pixel 12A is extracted to correct each color signal detected by each of the color pixels 12R, 12G, 12B, using its color signal.
Abstract:
PROBLEM TO BE SOLVED: To improve sensitivity through avalanche multiplication in a state where a light shot noise is controlled. SOLUTION: A solid-state imaging apparatus includes a first electrode 21, a second electrode 25 disposed opposing to the first electrode 21, and a photoelectric conversion film 24, which is disposed between the first electrode 21 and the second electrode 25 and in which narrow gap semiconductor quantum dots 23 are dispersed in a conductive film 22, wherein one electrode of the first electrode 21 and the second electrode 25 is formed from a transparent electrode and the other electrode is formed from a metal electrode or a transparent electrode. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a solid-state imaging element which is capable of securing a sufficient S/N ratio by reducing noise caused by a dark current. SOLUTION: The solid-state imaging element includes: a semiconductor layer; a photoelectric transducer formed in the semiconductor layer; a single crystal layer which is formed on at least a part wherein the photoelectric transducer is formed, of the semiconductor layer and is made of a material having a wider band gap than the semiconductor layer; and a superlattice provided between the semiconductor layer and the single crystal layer. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To apply an imaging apparatus which is excellent in color reproducibility, is satisfactory in light resistance, has durability, and is strong to a change with lapse of time by suppressing color mixing. SOLUTION: The imaging apparatus is equipped with a filter 10 constituted of multilayered films for the purpose of selecting the wavelength of light incident on the imaging apparatus. It is provided with the filter 10 so as to satisfy d=λ/(4xn) when the central wavelength of the selected light is defined as λ, the thickness of each layer of the multilayered films as d, and the refractive index of each layer as n. Also, the multilayered films composed of a combination of a silicon nitride film (Si x N y film; for example, Si 3 N 4 film) and silicon oxide (SiO x film; for example, SiO 2 film) are used as the multilayered films of the filter 10. COPYRIGHT: (C)2007,JPO&INPIT
Abstract translation:要解决的问题:为了应用色彩再现性优异的成像装置,耐光性良好,具有耐久性,并且通过抑制混色而随着时间的推移而变化强烈。 解决方案:成像装置配备有由多层膜构成的滤光片10,用于选择入射在成像装置上的光的波长。 当所选择的光的中心波长被定义为λ,多层膜的厚度为d,每层的折射率为d时,设置有滤波器10以满足d =λ/(4xn) 作为n。 此外,由氮化硅膜(Si x SB> N y SB>膜的组合构成的多层膜,例如Si 3 SB> N 4 SB>膜)和氧化硅(SiO xSX>膜,例如SiO 2 SB>膜)用作过滤器10的多层膜。
Abstract:
PROBLEM TO BE SOLVED: To provide a film forming method enabling convenient formation of a photonic-crystalline particulate film having a uniformly oriented state without unevenness and excellent reflection characteristics. SOLUTION: A substrate is immersed in a particulate dispersion dispersed with particulate in a dispersion medium (S1). A liquid film of the particulate dispersion is formed on the surface of the substrate by pulling up the substrate from the particulate dispersion into a gas phase (S2). The dispersing medium is evaporated from the liquid film to dry the substrate so as to form a particulate film composed of particulate assembled in a self-organizing way (S5). After the pulling up of the substrate into the gas phase (S2) and before drying up of the liquid film (S5), the substrate is immersed again in the particulate dispersion (S1), and the immersion of the substrate (S1) and the pulling up of the substrate (S2) are repeated. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a solid-state imaging element capable of securing a sufficient S/N ratio by reducing noise due to dark current. SOLUTION: The solid-state imaging element 1 having a photoelectric conversion element PD is formed in a semiconductor layer 11, and a single crystal layer 25 made of a material with a wider bandgap than the semiconductor layer 11 is formed at least on a region of the layer 11 where the photoelectric conversion element PD is formed. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a forming method for a particle structure by which a crystal grain boundary and a particle layer having less cracks can be formed, and can increase the mechanical strength by a high crystallinity, and to provide a particle structure having a high crystallinity and a screen which are formed by the forming method. SOLUTION: Cracks which occur when a particle layer is dried can be prevented from occurring by imparting flexibility to an underlayer particle layer by fixing underlayer particles which are accumulated on a base plate by a fixing agent, and a flat surface can be formed on the base plate. Thus, the occurrence of the crystal grain boundary of a particle arrangement layer which is formed on the layer can be prevented from occurring, and the particle structure of a high crystallinity can be formed. Also, the redissolution to a solvent can be prevented from occurring by fixing the underlayer particles or the arrangement particles by a bonding agent, and a uniform surface of the particle layer can be maintained. The particle structure and the screen which are formed by this method have a high crystallinity, and the mechanical strength which can be increased. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a light reflection type optical medium that selectively reflects the light of a visible light region and is little influenced by scattered light, and to provide a screen that hardly causes a display image contrast decrease due to scattered light. SOLUTION: The light reflection type optical medium is provided in which a reflection layer selectively reflects light of one or more visible light areas and a dye in the reflection layer decreases the effect of scattered light caused by defects in the reflection layer. By disposing the reflection layer and the dye, the screen that hardly causes contrast decrease can be provided. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a light reflection type optical medium having a reflection layer reflecting specified visible light and possessing structure where the deterioration of image quality caused by scattering external light unrelated to an image by the defect part of the reflection layer is hardly caused, and applied to a reflection type screen or the like. SOLUTION: The light reflection type optical medium is constituted by laminating a red light reflection layer 2, a green light reflection layer 3 and a blue light reflection layer 4 which are photonic crystal layers on a visible light absorbing layer 1. The reflection layers 2-4 selectively reflect three primary color light beams projected from a projector or the like and form a high-contrast full color image. Visible light absorbing substance is contained in at least one of the reflection layers 2-4 and/or at least one of boundary parts between the layers. Thus, even if the external light is made incident on a screen in a figure, it is partially absorbed by the visible light absorbing substance before it reaches the defect parts of the photonic crystal layers 2-4. Even if the external light is scattered, the scattered light is absorbed by the visible light absorbing substance, so that the scattered light reaching an observer's eye is reduced. COPYRIGHT: (C)2004,JPO&NCIPI