Abstract:
An electron emission device and a manufacturing method thereof. The electron emission device includes a first substrate and a second substrate opposing one another with a predetermined gap therebetween. The first and second substrates are interconnected using a sealant to thereby form a vacuum assembly. Cathode electrodes are formed on the first substrate, and electron emission sources are formed on the cathode electrodes. Further, gate electrodes are mounted on the cathode electrodes with a first insulation interposed therebetween. The gate electrodes are formed in a multi-layered structure of at least two layers. An anode electrode is formed on the second substrate, and a phosphor screen is formed on the anode electrode.
Abstract:
Disclosed herein is a fluorescent light source including an yttria layer. Specifically, the current invention provides a fluorescent light source having high quality and a long lifetime, which can prevent a decrease in initial luminance of a fluorescent light source, including a fluorescent lamp, and resist the radiation of ultraviolet light and the permeation of mercury, which are the causes of deterioration of the fluorescent light source, so as not to decrease the luminance in proportion to the lighting time of the fluorescent light source, thus assuring both initial luminance properties and luminance properties after use for a long period of time. Such a fluorescent light source includes glass, a fluorescent material layer, and an absorbing layer composed mainly of yttria particles formed between the glass and the fluorescent material layer or on the inner surface of the fluorescent material layer. In addition, an yttria coating composition used in the fluorescent light source and a method of fabricating the fluorescent light source using the composition are also provided.
Abstract:
A display device includes a display panel assembly having a plurality of pixels arranged in rows and columns and a backlight unit disposed behind the display panel assembly and having a plurality of pixels arranged in rows and columns. The number of the pixels of the backlight unit is less than a number of the pixels of the display panel assembly. The backlight unit includes a plurality of scan electrodes arranged along one of row and column directions and a plurality of data electrodes arranged along the other of the row and column directions; and the pixels of the backlight unit are adapted to emit lights having intensities in accordance with gray levels of the pixels of the display panel assembly.
Abstract:
An apparatus for receiving and processing a broadcast signal in a mobile broadcasting terminal is provided. A preprocessor receives a broadcast signal, converts the broadcast signal into a baseband signal, and then performs OFDM demodulation, Viterbi decoding, and convolutional deinterleaving thereon. A first Reed-Solomon (RS) decoder RS-decodes the signal output from the preprocessor, and outputs a Transport Stream (TS) packet. A checker checks Cyclic Redundancy Check (CRC) of the TS packet. A datagram extractor extracts a datagram having a good CRC result. A datagram controller receives the datagram having a good CRC result and outputs the received datagram to an application controller. The application controller decodes the broadcast data using the datagram received from the datagram controller and provides the decoded broadcast data to a user.
Abstract:
An apparatus and method for transmitting data in a wireless communication system using Code Division Multiplexing (CDM) are provided. A code controller distinguishes a Walsh code used for spreading during data transmission and a Walsh code unused for spreading based on a signal-to-interference ratio required by the system, and separately provides the Walsh codes. A CDM multiplexer CDM-multiplexes input data using the Walsh code used for spreading, provided from the code controller. A code modulator modulates input data using the Walsh code unused for spreading, provided from the code controller. A multiplexer multiplexes outputs of the CDM multiplexer and the code modulator.
Abstract:
A method of fabricating a semiconductor device forms a shallow source/drain region after a deep source/drain region. First, a gate insulating layer including a gate pattern and a gate electrode are formed on a semiconductor substrate. A buffer insulating layer, a first insulating layer, and a second insulating layer are then sequentially formed on the entire surface of the gate pattern and the semiconductor substrate. A first spacer is formed on the first insulating layer at both sidewalls of the gate pattern by etching the second insulating layer. A deep source/drain region is then formed on the semiconductor substrate as aligned by the first spacer. The first spacer is removed. Next, an offset spacer is formed at both sidewalls of the gate pattern by etching the first insulating layer. Finally, a shallow source/drain region is formed on the semiconductor substrate adjacent to the deep source/drain region as aligned by the offset spacer.
Abstract:
A computer system having a wireless input device and a coordinate processing method, where a computer system having a wireless input device inputs coordinate information into a computer or a terminal, the computer system having a wireless input device includes: a signal reflecting device, associated with the wireless input device, to receive and reflect a first signal and one or more second signals, the signals reflected from the signal reflecting device to determine position coordinates of the wireless input device; and a signal processing device to generate and transmit the first signal and the one or more second signals to the signal reflecting device and to determine the position coordinates of the wireless input device associated with the signal reflecting device, based on the returned first and second signals reflected by the signal reflecting device.
Abstract:
There are provided metal-insulator-metal (MIM) capacitors and methods of forming the same. The capacitors and the formation methods thereof provide a way of simplifying semiconductor fabrication processes, using component elements of the capacitor and insulating layers around the capacitor. To this end, lower and upper electrodes are sequentially stacked on a semiconductor substrate. A dielectric layer pattern is interposed between the upper and lower electrodes. An etch stop layer pattern and an etch buffer layer are disposed on the upper electrode and under the lower electrode, respectively. The upper and lower electrodes are disposed to expose the dielectric layer pattern and the etch buffer layer.
Abstract:
A method of forming metal wiring in a semiconductor device is disclosed. The method uses a dual damascene process in which a trench is formed prior to a via-hole.
Abstract:
Generally, this invention provides a toughened ceramic composite and a method of enhancing the mechanical strength of ceramic matrix composites through use of a transformation weakened interphase material. The ceramic composite provided in this invention includes a ceramic matrix, a second material as a second phase, and a metastable interphase material. The metastable interphase material is positioned between the ceramic matrix and the second phase material. The ceramic composite can include reinforcing elements such as fibers, whisker-shapes, platelets and particulates or have laminated or fibrous monolithic geometries. The metastable interphase material is capable of undergoing a shear or stress induced zero volume or negative volume, martensitic phase transformation, which may or may not be accompanied by a crystallographic unit cell shape change. In one embodiment, the metastable interphase material includes &bgr;-cristobalite.