Abstract:
L'invention concerne un coupleur/séparateur comprenant deux portions de guides d'onde coplanaires voisines (11, 13) s'étendant dans une même direction, la première portion (11) étant à section constante, la deuxième portion (13) étant à section variable de façon que l'indice effectif de la deuxième portion de guide d'onde passe, de l'amont vers l'aval, d'une première valeur inférieure à une deuxième valeur supérieure à l'indice effectif de la première portion, dans des conditions de couplage adiabatique.
Abstract:
Disclosed is an apparatus and method including a semiconductor substrate including a waveguide having a guiding region and one or more bounding regions coupled to the guiding region; a first PN junction disposed in the substrate and coupled to one or more of the one or more bounding regions; and dopant atoms disposed within the semiconductor substrate at the PN junction. An alternate embodiment includes a memory device, having a waveguide having a guiding region for propagating a radiation signal; an influencer, coupled to the waveguide, for controlling a characteristic of the radiation signal propagating in the waveguide between a first mode and a second mode; and a latching layer, coupled to the guiding region and responsive to the influencer, for retaining the characteristic of the radiation signal for a memory cycle.
Abstract:
A tunable optical signal device and method of using the same having at least two filter elements, each of said filter elements being made of a material having an adjustable parameter, wherein the adjustable parameter is maintained at slightly different values for adjacent filter elements.
Abstract:
An optical waveguide (2) formed on one major surface of a substrate (1) made of a non-linear optical crystal. A periodic polarization inversion region (3) where each polarization inverts periodically along the waveguiding direction is formed in the optical waveguide. In the polarization inversion region, the inversion period of the polarization is made shorter gradually toward the light-emitting end (2b) of the optical waveguide from the light-incident end (2a) thereof. A pair of electrodes (5,6) facing each other via the optical waveguide are formed. A voltage is applied to the optical waveguide in the direction perpendicular to the waveguiding direction by those electrodes. An electric field produced in the optical waveguide by the applied voltage induces an electrooptical effect which allows the individual refractive indices of the fundamental wave and second harmonic to be changed. The allowable fundamental wavelength band can be shifted to the short wavelength side or long wavelength side of the fundamental wavelength in accordance with the level of the applied voltage.
Abstract:
The invention relates to a planar optical element comprising a light-conducting layer 10 on a supporting material 11 having a refractive index which is lower than that of the light-conducting layer, which light-conducting layer comprises one or more waveguide channels 13. The waveguide channels are laterally delimited by metal layers 14,15 which extend on either side of each waveguide channel, which metal layers are located between the supporting material and the light-conducting layer and directly contact said light-conducting layer. Preferably, the metal layers are provided in the form of electrodes, such that an electric field can be applied transversely across one or more waveguide channels. Such a planar optical element can be used, for example, as an optical switch and in a device for doubling the frequency of a lightwave.
Abstract:
A thermo-optic phase shifter includes a substrate having a cavity formed into an upper region of the substrate. The thermo-optic phase shifter includes an optical waveguide disposed above the substrate. The optical waveguide extends across and above the cavity. The thermo-optic phase shifter also includes a heater device disposed along a lateral side of the optical waveguide. The heater device extends across and above the cavity. The cavity is formed by an undercut etching process after the optical waveguide and the heater device is formed. The optical waveguide can be formed to include one or more segments that pass over the cavity. Also, a second heater device can be included such that the one or more segments of the optical waveguide that extend over the cavity are bracketed by heater devices. Thermal transmission structures can be included to enhance heat transfer between the heater device(s) and the optical waveguide.
Abstract:
A thermo-optic phase shifter includes a substrate having a cavity formed into an upper region of the substrate. The thermo-optic phase shifter includes an optical waveguide disposed above the substrate. The optical waveguide extends across and above the cavity. The thermo-optic phase shifter also includes a heater device disposed along a lateral side of the optical waveguide. The heater device extends across and above the cavity. The cavity is formed by an undercut etching process after the optical waveguide and the heater device is formed. The optical waveguide can be formed to include one or more segments that pass over the cavity. Also, a second heater device can be included such that the one or more segments of the optical waveguide that extend over the cavity are bracketed by heater devices. Thermal transmission structures can be included to enhance heat transfer between the heater device(s) and the optical waveguide.
Abstract:
A programmable two-dimensional simultaneous multi-beam optically operated phased array receiver chip is manufactured based on silicon-on-insulator (SOI) and indium phosphide (InP) semiconductor manufacturing processes, including the SiN process. The InP-based semiconductor is used for preparing a laser array chip and a semiconductor optical amplifier array chip, the SiN is used for preparing an optical power divider, and the SOI semiconductor is used for preparing a silicon optical modulator, a germanium-silicon detector, an optical wavelength multiplexer, a true delay line, and other passive optical devices. The whole integration of the receiver chip is realized through heterogeneous integration of the InP-based chip and the SOI-based chip. Simultaneous multi-beam scanning can be realized through peripheral circuit programming control. The chip not only can realize two-dimensional multi-beam scanning, but also has strong expansibility, such that the chip can be used for ultra-wideband high-capacity wireless communication and simultaneous multi-target radar recognition systems.
Abstract:
Mach-Zehnder interferometers comprise heater elements configured to have projections in the plane of optical waveguides positioned such that two adjacent sections of one optical waveguide arms are heated by a common heater element. The heater and at least a substantial section of the heated waveguide segments can be curved. Configurations of an optical waveguide arm can comprise an outer curved heated section, an inner curved heated section, and a loopback waveguide section connecting the outer curved heated section and the inner curved heated section, with average radius of curvature selected to form an open accessible space. Appropriate configurations of the two optical waveguide arms provide for nested configurations of the arms that provide for a compact structure for the interferometer.