公开(公告)号：DE29711893U1

公开(公告)日：1997-09-11

申请号：DE29711893

申请日：1997-07-07

Applicant: LIN CHENG TAI

IPC: E06B9/36 ,  E06B9/322

公开(公告)号：WO2011146483A1

公开(公告)日：2011-11-24

申请号：PCT/US2011/036806

申请日：2011-05-17

Applicant: AERIE PHARMACEUTICALS, INC. ,  KOPCZYNSKI, Casey ,  LIN, Cheng-Wen ,  SUTAY, Chris

Inventor： KOPCZYNSKI, Casey ,  LIN, Cheng-Wen ,  SUTAY, Chris

IPC: A61K47/32

CPC classification number: A61K9/0051 ,  A61F9/0017 ,  A61K31/00 ,  A61K31/215 ,  A61K47/32 ,  A61K47/36

Abstract: Drug delivery devices comprising a non-bioabsorbable polymer structure configured to support a composition comprising an active agent. The devices include a plurality of portions fused together and a recess configured to support the composition. At least one of the portions includes an impermeable polymer and at least one other portion includes a rate-limiting water- permeable polymer. The rate-limiting water-permeable polymer allows for transportation of the active agent to an exterior of the device.

Abstract translation: 包括非生物可吸收聚合物结构的药物递送装置，其被配置为支持包含活性剂的组合物。 这些装置包括熔合在一起的多个部分和构造成支撑组合物的凹部。 至少一个部分包括不可渗透的聚合物，并且至少一个其它部分包括速率限制的水可渗透聚合物。 速率限制的透水性聚合物允许将活性剂运送到装置的外部。

公开(公告)号：WO2010135535A1

公开(公告)日：2010-11-25

申请号：PCT/US2010/035579

申请日：2010-05-20

Applicant: E. I. DU PONT DE NEMOURS AND COMPANY ,  ANDERSON, David, Kent ,  ANDERSON, Russell, David ,  HANG, Kenneth, Warren ,  KAO, Shih-Ming ,  LAUDISIO, Giovanna ,  LIN, Cheng-Nan ,  WU, Chun-Kwei

Inventor： ANDERSON, David, Kent ,  ANDERSON, Russell, David ,  HANG, Kenneth, Warren ,  KAO, Shih-Ming ,  LAUDISIO, Giovanna ,  LIN, Cheng-Nan ,  WU, Chun-Kwei

IPC: H01L31/0224 ,  H01B1/16

CPC classification number: H01L31/022425 ,  C03C8/02 ,  C03C8/10 ,  C03C8/24 ,  Y02E10/50

Abstract: A process of forming a front-grid electrode on a silicon wafer having an ARC layer, comprising the steps: (1) printing and drying a metal paste A comprising an inorganic content comprising 0.5 to 8 wt.-% of glass frit and having fire-through capability, wherein the metal paste A is printed on the ARC layer to form a bottom set of thin parallel finger lines, (2) printing and drying a metal paste B comprising an inorganic content comprising 0 to 3 wt.-% of glass frit over the bottom set of finger lines forming a top set of finger lines superimposing the bottom set of finger lines, (3) printing and drying a metal paste C comprising an inorganic content comprising 0.2 to 3 wt.-% of glass frit to form busbars intersecting the finger lines at right angle, and (4) firing the triple-printed silicon wafer, wherein the inorganic content of metal paste B as well as that of paste C contains less glass frit plus optionally present other inorganic additives than the inorganic content of metal paste A.

Abstract translation: 一种在具有ARC层的硅晶片上形成前栅格电极的方法，包括以下步骤：（1）印刷和干燥包含0.5至8重量％玻璃料并具有火焰的无机物含量的金属糊剂A 通过能力，其中金属膏A印刷在ARC层上以形成底部薄的平行指线，（2）印刷和干燥含有0至3重量％玻璃的无机物质的金属浆料B （3）印刷和干燥包含0.2至3重量％玻璃料的无机物含量的金属浆料C以形成玻璃料，以形成最下面的一组指纹， 母线与指纹线成直角相交，（4）烧制三印刷硅片，其中金属糊料B的无机物含量以及糊料C的无机物含量少于无机物含量的玻璃料加上任选存在的其它无机添加剂 的金属糊 一个。

公开(公告)号：WO2010135496A1

公开(公告)日：2010-11-25

申请号：PCT/US2010/035522

申请日：2010-05-20

Applicant: E. I. DU PONT DE NEMOURS AND COMPANY ,  ANDERSON, Russell, David ,  HANG, Kenneth, Warren ,  KAO, Shih-Ming ,  LAUDISIO, Giovanna ,  LIN, Cheng-Nan ,  WU, Chun-Kwei

Inventor： ANDERSON, Russell, David ,  HANG, Kenneth, Warren ,  KAO, Shih-Ming ,  LAUDISIO, Giovanna ,  LIN, Cheng-Nan ,  WU, Chun-Kwei

IPC: H01L31/0224 ,  H01B1/16

CPC classification number: H01L31/022433 ,  C03C8/02 ,  C03C8/10 ,  C03C8/24 ,  H01B1/16 ,  H01L31/022425 ,  Y02E10/50

Abstract: A process of forming a front-grid electrode on a silicon wafer having an ARC layer, comprising the steps: (1) printing and drying a metal paste A comprising an inorganic content comprising 0.5 to 8 wt.-% of glass frit and having fire-through capability, wherein the metal paste A is printed on the ARC layer to form a bottom set of thin parallel finger lines, (2) printing and drying a metal paste B comprising an inorganic content comprising 0.2 to 3 wt.-% of glass frit over the bottom set of finger lines, wherein the metal paste B is printed in a grid pattern which comprises (i) thin parallel finger lines forming a top set of finger lines superimposing the bottom set of finger lines and (ii) busbars intersecting the finger lines at right angle, and (3) firing the double-printed silicon wafer, wherein the inorganic content of metal paste B contains less glass frit plus optionally present other inorganic additives than the inorganic content of metal paste A.

Abstract translation: 一种在具有ARC层的硅晶片上形成前栅格电极的方法，包括以下步骤：（1）印刷和干燥包含0.5至8重量％玻璃料并具有火焰的无机物含量的金属糊剂A 通过能力，其中金属糊剂A印刷在ARC层上以形成底部薄的平行指线，（2）印刷和干燥包含含有0.2至3重量％玻璃的无机物质的金属浆料B 玻璃料覆盖在底部指状线组上，其中金属糊料B以网格图案打印，该网格图案包括（i）薄的平行指线，形成叠加了底部指状线组的顶部一组指纹线，以及（ii）与 指状物为直角，（3）烧制双面印刷的硅晶片，其中金属糊料B的无机物含量比金属糊剂A的无机物含量少，玻璃料加上任选存在的其它无机添加剂。

公开(公告)号：WO2010062918A2

公开(公告)日：2010-06-03

申请号：PCT/US2009/065812

申请日：2009-11-24

Applicant: LAM RESEARCH CORPORATION ,  KHOLODENKO, Arnold ,  LIN, Cheng-Yu, Sean ,  GINZBURG, Leon ,  MANDELBOYM, Mark ,  TOMASCH, Gregory, A. ,  HUSAIN, Anwar

Inventor： KHOLODENKO, Arnold ,  LIN, Cheng-Yu, Sean ,  GINZBURG, Leon ,  MANDELBOYM, Mark ,  TOMASCH, Gregory, A. ,  HUSAIN, Anwar

IPC: H01L21/302

CPC classification number: H01L21/6704 ,  B08B3/003 ,  C11D11/0047 ,  C11D11/0058 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6719 ,  H01L21/6776

Abstract: In an example embodiment, a linear wet system includes a carrier and a proximity head in a chamber. The proximity head includes three sections in a linear arrangement. The first section suctions liquid from the upper surface of a semiconductor wafer as the wafer is transported by the carrier under the proximity head. The second section is configured to cause a film (or meniscus) of cleaning foam which is a non-Newtonian fluid to flow onto the upper surface of the wafer. The third section is configured to cause a film of rinsing fluid to flow onto the upper surface of the wafer as the wafer is carried under the proximity head. The third section is defined partially around the second section and up to the first section, so that the third section and the first section create a confinement of the cleaning foam with respect to the chamber.

Abstract translation: 在示例性实施例中，线性湿系统包括腔室中的载体和临近头。 临近头包括三个线性排列的部分。 当晶片由邻近头下的载体传送时，第一部分从半导体晶片的上表面抽吸液体。 第二部分构造成使非牛顿流体的清洁泡沫的膜（或弯液面）流到晶片的上表面上。 第三部分被配置成当晶片在邻近头下被携带时使漂洗流体膜流到晶片的上表面。 第三部分被部分地限定在第二部分周围并且一直到第一部分，使得第三部分和第一部分形成清洁泡沫相对于腔室的限制。

公开(公告)号：WO2012077032A1

公开(公告)日：2012-06-14

申请号：PCT/IB2011/055453

申请日：2011-12-05

Applicant: LAM RESEARCH CORPORATION ,  LAM RESEARCH AG ,  HUANG, Chung-Ho ,  LIN, Cheng-Chieh

Inventor： HUANG, Chung-Ho ,  LIN, Cheng-Chieh

IPC: B05C11/00 ,  H01L21/3065

CPC classification number: B08B6/00 ,  G05B19/4184 ,  G05B19/41865 ,  G05B2219/32226 ,  G05B2219/45031 ,  Y02P90/14 ,  Y02P90/20

Abstract: Methods and apparatus for controlling a plasma processing system in a purely pull mode or a hybrid pull mode, in the purely pull mode, the back end assumes master control at least for requesting and scheduling loading of production wafers. In the hybrid pull mode, the back end assumes master control at least for tool maintenance/cleaning while the front end retains master control for production wafers.

Abstract translation: 在纯牵引模式中，纯拉动模式或混合牵引模式下等离子体处理系统的控制方法和装置，后端假定主控制至少用于请求和调度加工生产晶片。 在混合拉动模式中，后端至少为了进行工具维护/清洁而进行主控制，而前端保留用于生产晶片的主控制。

公开(公告)号：WO2010129115A3

公开(公告)日：2011-01-13

申请号：PCT/US2010029273

申请日：2010-03-30

Applicant: LAM RES CORP ,  LIN CHENG-YU SEAN ,  KAWAGUCHI MARK ,  WILCOXSON MARK ,  MARTIN RUSSELL ,  GINZBURG LEON

Inventor： LIN CHENG-YU SEAN ,  KAWAGUCHI MARK ,  WILCOXSON MARK ,  MARTIN RUSSELL ,  GINZBURG LEON

IPC: H01L21/302 ,  H01L21/304

CPC classification number: H01L21/67051 ,  Y10S134/902

Abstract: An upper processing head includes a topside module defined to apply a cleaning material to a top surface of a substrate and then expose the substrate to a topside rinsing meniscus. The topside module is defined to flow a rinsing material through the topside rinsing meniscus in a substantially uni-directional manner towards the cleaning material and opposite a direction of movement of the substrate. A lower processing head includes a bottomside module defined to apply a bottomside rinsing meniscus to the substrate so as to balance a force applied to the substrate by the topside rinsing meniscus. The bottomside module is defined to provide a drain channel for collecting and draining the cleaning material dispensed from the upper processing head when the substrate is not present between the upper and lower processing heads. The upper and lower processing heads can include multiple instantiations of the topside and bottomside modules, respectively.

Abstract translation: 上加工头包括顶层模块，其定义为将清洁材料施加到基板的顶表面，然后将基板暴露于顶侧冲洗弯液面。 顶部模块被定义为使冲洗材料以基本上单向的方式流过顶侧冲洗弯液面朝向清洁材料并与衬底的移动方向相反。 下处理头包括底部模块，所述底部模块限定为将底部冲洗弯液面施加到基底，以平衡由顶侧冲洗弯液面施加到基底的力。 底部模块被限定为当衬底不存在于上加工头和下加工头之间时，提供用于收集和排出从上加工头分配的清洁材料的排水通道。 上下处理头可以分别包括顶侧和底部模块的多个实例。

公开(公告)号：WO2010062918A3

公开(公告)日：2010-08-12

申请号：PCT/US2009065812

申请日：2009-11-24

Applicant: LAM RES CORP ,  KHOLODENKO ARNOLD ,  LIN CHENG-YU SEAN ,  GINZBURG LEON ,  MANDELBOYM MARK ,  TOMASCH GREGORY A ,  HUSAIN ANWAR

Inventor： KHOLODENKO ARNOLD ,  LIN CHENG-YU SEAN ,  GINZBURG LEON ,  MANDELBOYM MARK ,  TOMASCH GREGORY A ,  HUSAIN ANWAR

IPC: H01L21/302

CPC classification number: H01L21/6704 ,  B08B3/003 ,  C11D11/0047 ,  C11D11/0058 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6719 ,  H01L21/6776

Abstract: In an example embodiment, a linear wet system includes a carrier and a proximity head in a chamber. The proximity head includes three sections in a linear arrangement. The first section suctions liquid from the upper surface of a semiconductor wafer as the wafer is transported by the carrier under the proximity head. The second section is configured to cause a film (or meniscus) of cleaning foam which is a non-Newtonian fluid to flow onto the upper surface of the wafer. The third section is configured to cause a film of rinsing fluid to flow onto the upper surface of the wafer as the wafer is carried under the proximity head. The third section is defined partially around the second section and up to the first section, so that the third section and the first section create a confinement of the cleaning foam with respect to the chamber.

Abstract translation: 在一个示例性实施例中，线性湿式系统包括载体和室中的邻近头部。 接近头包括线性布置的三个部分。 第一部分在半导体晶片的上表面吸附液体，因为晶片由邻近头部下方的载体输送。 第二部分被配置为使得作为非牛顿流体的清洁泡沫的膜（或弯液面）流动到晶片的上表面上。 第三部分构造成当晶片被携带在邻近头部下方时，使冲洗流体膜流到晶片的上表面。 第三部分围绕第二部分和第一部分部分地限定，使得第三部分和第一部分产生相对于室的清洁泡沫的限制。

公开(公告)号：WO2010080622A1

公开(公告)日：2010-07-15

申请号：PCT/US2009/068748

申请日：2009-12-18

Applicant: AERIE PHARMACEUTICALS, INC. ,  KOPCZYNSKI, Casey ,  LIN, Cheng-Wen ,  SUTAY, Chris

Inventor： KOPCZYNSKI, Casey ,  LIN, Cheng-Wen ,  SUTAY, Chris

IPC: A61K9/00 ,  A61K47/32 ,  A61K47/34 ,  A61K47/36

CPC classification number: A61K9/0051 ,  A61K31/00

Abstract: Drug delivery devices comprising a non-bioabsorbable polymer structure and a composition comprising an active agent have been discovered. The drug delivery devices may be used to treat ocular conditions, among other diseases and conditions. In addition, a method of treating an ocular condition has been discovered comprising implanting a drug delivery device which releases the active agent at a rate of Q = 0.001 x N x C wherein C is the topical effective concentration (in milligram/mL) of the active agent and N=0.01 to 0.5 for prostaglandins in their ester, amide, free acid or salt form, and N=0.5 to 5 for any active agent other than prostaglandins in their ester, amide, free acid or salt form.

Abstract translation: 已经发现了包含非生物可吸收聚合物结构的药物递送装置和包含活性剂的组合物。 药物递送装置可用于治疗眼部疾病和病症等疾病。 此外，已经发现了治疗眼部病症的方法，其包括植入以Q = 0.001×N×C的速率释放活性剂的药物递送装置，其中C是局部有效浓度（以毫克/ mL计） 活性剂，对于前列腺素，其酯，酰胺，游离酸或盐形式的N = 0.01至0.5，对于除了前列腺素之外的任何活性剂，在其酯，酰胺，游离酸或盐形式中N = 0.5至5。

公开(公告)号：WO2009085250A3

公开(公告)日：2009-08-27

申请号：PCT/US2008013985

申请日：2008-12-19

Applicant: LAM RES CORP ,  KHOLODENKO ARNOLD ,  LIN CHENG-YU SEAN

Inventor： KHOLODENKO ARNOLD ,  LIN CHENG-YU SEAN

IPC: H01L21/302 ,  H01L21/30

CPC classification number: H01L21/67051 ,  H01L21/67057

Abstract: Methods configure a proximity head for conditioning fluid flow relative to a proximity head in processing of a surface of a wafer by a meniscus. The methods configure the head in one piece while maintaining head rigidity even as the head is lengthened for cleaning of large diameter wafers. The one-piece head configuring separates main fluid flows from separate flows of fluid relative to the wafer surface, with the separation being by a high resistance fluid flow configuration, resulting in substantially uniform fluid flows across increased lengths of the head in a unit for either fluid supply or return.

Abstract translation: 在弯液面处理晶片表面时，方法配置邻近头用于调节相对于邻近头的流体流动。 这种方法将头部配置成一体，同时保持头部刚度，即使头部被延长以清洁大直径晶片。 一体式头部构造将主要流体流相对于晶片表面的单独的流体流分离，其中分离是由高阻力流体流动构造，导致基本上均匀的流体流过头部的增加的长度， 流体供应或返回。