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    High linearity antenna swapping circuitry
    112.
    发明授权
    High linearity antenna swapping circuitry 有权

    公开(公告)号：US09735850B2

    公开(公告)日：2017-08-15

    申请号：US15084142

    申请日：2016-03-29

    Applicant: RF Micro Devices, Inc.

    Inventor： Nadim Khlat ,  Marcus Granger-Jones

    IPC: H04B1/44 ,  H04B7/06 ,  H04B1/00 ,  H04B1/401

    CPC classification number: H04B7/0608 ,  H04B1/0053 ,  H04B1/0064 ,  H04B1/0458 ,  H04B1/18 ,  H04B1/401 ,  H04B7/0602 ,  H04B7/0802

    Abstract: Antenna swapping circuitry includes a first pole, a second pole, a first throw, a second throw, and a number of switching elements. A first switching element is coupled between the first pole and the first throw. A second switching element is coupled between the first pole and the second throw. A third switching element is coupled between the second pole and the first throw. A fourth switching element is coupled between the second pole and the second throw. A linearity of the first switching element and the fourth switching element is higher in a closed state of operation than in an open state of operation. A linearity of the second switching element and a third switching element is higher in an open state of operation than in a closed state of operation.

    BAW resonator having lateral energy confinement and methods of fabrication thereof
    113.
    发明授权
    BAW resonator having lateral energy confinement and methods of fabrication thereof 有权

    公开(公告)号：US09735755B2

    公开(公告)日：2017-08-15

    申请号：US14876426

    申请日：2015-10-06

    Applicant: RF Micro Devices, Inc.

    Inventor： Gernot Fattinger ,  Alireza Tajic

    IPC: H03H9/02 ,  H03H9/13 ,  H03H3/02 ,  H03H9/17

    CPC classification number: H03H9/02157 ,  H03H3/02 ,  H03H9/02086 ,  H03H9/02118 ,  H03H9/132 ,  H03H9/171 ,  H03H9/175 ,  H03H2003/025

    Abstract: Embodiments of a Bulk Acoustic Wave (BAW) resonator in which an outer region of the BAW resonator is engineered in such a manner that lateral leakage of mechanical energy from an active region of the BAW resonator is reduced, and methods of fabrication thereof, are disclosed. In some embodiments, a BAW resonator includes a piezoelectric layer, a first electrode on a first surface of the piezoelectric layer, a second electrode on a second surface of the piezoelectric layer opposite the first electrode, and a passivation layer on a surface of the second electrode opposite the piezoelectric layer, the passivation layer having a thickness (TPA). The BAW resonator also includes a material on the second surface of the piezoelectric layer adjacent to the second electrode in an outer region of the BAW resonator. The additional material has a thickness that is n times the thickness (TPA) of the passivation layer.

    Method of manufacture for a silicon-on-plastic semiconductor device with interfacial adhesion layer
    114.
    发明授权
    Method of manufacture for a silicon-on-plastic semiconductor device with interfacial adhesion layer 有权

    公开(公告)号：US09735044B2

    公开(公告)日：2017-08-15

    申请号：US14715830

    申请日：2015-05-19

    Applicant: RF Micro Devices, Inc.

    Inventor： Julio C. Costa

    IPC: H01L21/00 ,  H01L21/762 ,  H01L27/12 ,  H01L23/29 ,  H01L23/36 ,  H01L23/373 ,  H01L29/786 ,  H01L23/31 ,  H01L21/56

    Abstract: A semiconductor device and methods for manufacturing the same are disclosed. The semiconductor device includes a polymer substrate and an interfacial layer over the polymer substrate. A buried oxide layer resides over the interfacial layer, and a device layer with at least a portion of a field effect device resides over the buried oxide layer. The polymer substrate is molded over the interfacial adhesion layer and has a thermal conductivity greater than 2 watts per meter Kelvin (W/mK) and an electrical resistivity greater than 1012 Ohm-cm. Methods of manufacture for the semiconductor device include removing a wafer handle to expose a first surface of the buried oxide layer, disposing the interfacial adhesion layer onto the first surface of the buried oxide layer, and molding the polymer substrate onto the interfacial adhesion layer.

    Triplexer architecture for aggregation
    115.
    发明授权
    Triplexer architecture for aggregation 有权

    公开(公告)号：US09729191B2

    公开(公告)日：2017-08-08

    申请号：US14659314

    申请日：2015-03-16

    Applicant: RF Micro Devices, Inc.

    Inventor： Nadim Khlat ,  Marcus Granger-Jones

    IPC: H04L5/00 ,  H04B1/525

    CPC classification number: H04B1/525

    Abstract: RF circuitry, which includes a first hybrid RF coupler, a second hybrid RF coupler, and a third hybrid RF coupler, is disclosed. The first hybrid RF coupler is coupled to a first RF antenna. The second hybrid RF coupler is configured to receive a first lowband RF receive signal via the first RF antenna. The first hybrid RF coupler is configured to receive one of a first midband RF receive signal and a first highband RF receive signal via the first RF antenna. The third hybrid RF coupler configured to receive another of the first midband RF receive signal and the first highband RF receive signal via the first RF antenna.

    Glass wafer assembly
    120.
    发明授权
    Glass wafer assembly 有权

    公开(公告)号：US09688529B2

    公开(公告)日：2017-06-27

    申请号：US14718408

    申请日：2015-05-21

    Applicant: RF Micro Devices, Inc.

    Inventor： Jan Edward Vandemeer ,  Jonathan Hale Hammond

    IPC: B81B3/00 ,  B81B7/00 ,  B81C1/00

    CPC classification number: B81B7/0006 ,  B81B2201/014 ,  B81B2207/092 ,  B81B2207/095 ,  B81B2207/096 ,  B81C1/00269 ,  B81C1/00301 ,  B81C2203/0109 ,  B81C2203/035 ,  H01L2224/48137

    Abstract: A glass wafer assembly is disclosed. In one aspect, the glass wafer assembly comprises a first glass wafer and a second glass wafer that are bonded by a conductive sealing ring. The conductive sealing ring defines a substantially hermetically sealed cavity between the first glass wafer and the second glass wafer. In another aspect, the first glass wafer and the second glass wafer each comprise a plurality of conductive through glass vias (TGVs). At least one active device is disposed in the substantially hermetically sealed cavity and can be electrically coupled to a conductive TGV in the first glass wafer and a conductive TGV in the second glass wafer to enable flexible electrical routing through the glass wafer assembly without wire bonding and over molding. As a result, it is possible to reduce footprint and height while improving radio frequency (RF) performance of the glass wafer assembly.

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