公开(公告)号：WO2018044045A1

公开(公告)日：2018-03-08

申请号：PCT/KR2017/009437

申请日：2017-08-29

Applicant: SEOUL VIOSYS CO., LTD. ,  SENSOR ELECTRONIC TECHNOLOGY, INC.

Inventor： SHUR, Michael ,  DOBRINSKY, Alexander ,  SHATALOV, Maxim S. ,  BARBER III, Arthur Peter

IPC: A01G7/04 ,  A01G7/06 ,  A01G1/00 ,  G06Q50/02

Abstract: An approach for controlling light exposure of a light sensitive object is described. Aspects of this approach involve using a first set of radiation sources to irradiate the object with visible radiation and infrared radiation. A second set of radiation sources spot irradiate the object in a set of locations with a target ultraviolet radiation having a range of wavelengths. Radiation sensors detect radiation reflected from the object and environment condition sensors detect conditions of the environment in which the object is located during irradiation. A controller controls irradiation of the light sensitive object by the first and second set of radiation sources according to predetermined optimal irradiation settings specified for various environmental conditions. In addition, the controller adjusts irradiation settings of the first and second set of radiation sources as a function of measurements obtained by the various sensors.

Abstract translation: 描述了用于控制光敏对象的曝光的方法。 这种方法的一些方面涉及使用第一组辐射源来用可见辐射和红外辐射照射物体。 第二组辐射源光点用具有一定波长范围的目标紫外辐射在一组位置照射物体。 辐射传感器检测从物体反射的辐射，并且环境条件传感器在辐射期间检测物体所处的环境条件。 控制器根据针对各种环境条件指定的预定最优照射设置来控制第一组放射线源和第二组放射线源对光敏对象的照射。 另外，控制器根据由各种传感器获得的测量结果调整第一和第二组辐射源的辐照设置。

公开(公告)号：WO2018022724A3

公开(公告)日：2018-02-01

申请号：PCT/US2017/043896

申请日：2017-07-26

Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC. ,  SEOUL VIOSYS CO., LTD.

Inventor： DOBRINSKY, Alexander ,  SHUR, Michael ,  BARBER III, Arthur Peter ,  SHATALOV, Maxim, S.

IPC: A01G7/04 ,  A01G7/06 ,  A01N3/00

Abstract: A solution for controlling mildew in a cultivated area is described. The solution can include a set of ultraviolet sources that are configured to emit ultraviolet radiation in an ultraviolet range of approximately 260 nanometers to approximately 310 nanometers to harm mildew present on a plant or ground surface. A set of sensors can be utilized to acquire plant data for at least one plant surface of a plant, which can be processed to determine a presence of mildew on the at least one plant surface. Additional features can be included to further affect the growth environment for the plant. A feedback process can be implemented to improve one or more aspects of the growth environment.

Abstract translation: 描述了用于控制栽培区域中的霉菌的解决方案。 该解决方案可以包括一组紫外线源，其被配置为发射紫外线范围为大约260纳米至大约310纳米的紫外线辐射，以破坏存在于植物或地面上的霉菌。 可以使用一组传感器来获取植物的至少一个植物表面的植物数据，该植物数据可以被处理以确定在至少一个植物表面上存在霉变。 其他功能可以包括进一步影响植物的生长环境。 可以实施反馈过程以改善增长环境的一个或多个方面。

公开(公告)号：WO2017176083A1

公开(公告)日：2017-10-12

申请号：PCT/KR2017/003809

申请日：2017-04-07

Applicant: SEOUL VIOSYS CO., LTD. ,  SENSOR ELECTRONIC TECHNOLOGY, INC.

Inventor： DOBRINSKY, Alexander ,  SHUR, Michael ,  LAKIOS, Emmanuel

IPC: F21V8/00 ,  G02B19/00 ,  G02B5/02

Abstract: A diffusive ultraviolet illuminator is provided. The illuminator can include a reflective mirror and a set of ultraviolet radiation sources located within a proximity of the focus point of the reflective mirror. The ultraviolet radiation from the set of ultraviolet radiation sources is directed towards a reflective surface located adjacent to the illuminator. The reflective surface can diffusively reflect at least 30% the ultraviolet radiation and the diffusive ultraviolet radiation can be within at least 40% of Lambertian distribution. A set of optical elements can be located between the illuminator and the reflective surface in order to direct the ultraviolet radiation towards at least 50% of the reflective surface.

Abstract translation: 提供漫射紫外照明器。 照明器可以包括反射镜和位于反射镜的焦点附近的一组紫外辐射源。 来自该组紫外线辐射源的紫外辐射被导向位于照明器附近的反射表面。 反射表面可以漫射地反射至少30％的紫外辐射，并且漫射的紫外辐射可以在朗伯分布的至少40％内。 一组光学元件可以位于照明器和反射表面之间，以便将紫外线辐射导向至少50％的反射表面。

公开(公告)号：WO2017171463A1

公开(公告)日：2017-10-05

申请号：PCT/KR2017/003543

申请日：2017-03-31

Applicant: SEOUL VIOSYS CO., LTD. ,  SENSOR ELECTRONIC TECHNOLOGY, INC.

Inventor： BILENKO, Yuri ,  SHUR, Michael ,  DOBRINSKY, Alexander

IPC: G01J3/10 ,  G01J3/427 ,  G01J3/28

Abstract: An adjustable multi-wavelength lamp is described. The lamp can include a plurality of emitters. The emitters can include at least one ultraviolet emitter, at least one visible light emitter, and at least one infrared emitter. The lamp can include a control system for controlling operation of the plurality of emitters. The control system can be configured to selectively deliver power to any combination of one or more of the plurality of emitters to generate light approximating a target spectral distribution of intensity.

Abstract translation: 描述了一种可调节的多波长灯。 该灯可以包括多个发射器。 发射器可以包括至少一个紫外发射器，至少一个可见光发射器和至少一个红外发射器。 灯可以包括用于控制多个发射器的操作的控制系统。 控制系统可以被配置为选择性地将功率输送到多个发射器中的一个或多个发射器的任何组合以产生接近强度的目标光谱分布的光。

公开(公告)号：WO2016064134A3

公开(公告)日：2017-05-04

申请号：PCT/KR2015010874

申请日：2015-10-15

Applicant: SEOUL VIOSYS CO LTD

Inventor： KIM CHANG YEON ,  PARK JU YONG ,  SON SUNG SU

IPC: H01L33/36

CPC classification number: H01L33/42 ,  H01L33/382 ,  H01L33/405

Abstract: A light emitting device and a method of fabricating the same. The light emitting device includes: a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, an active layer, and a partially exposed region of an upper surface of the first conductive type semiconductor layer; a transparent electrode disposed on the second conductive type semiconductor layer; a first insulation layer including a first opening and a second opening; a metal layer at least partially covering the first insulation layer; a first electrode electrically connected to the first conductive type semiconductor layer; and a second electrode electrically connected to the transparent electrode.

Abstract translation: 发光器件及其制造方法。 该发光器件包括：发光结构，该发光结构包括第一导电类型半导体层，第二导电类型半导体层，有源层以及第一导电类型半导体层的上表面的部分暴露区域; 设置在第二导电类型半导体层上的透明电极; 包括第一开口和第二开口的第一绝缘层; 至少部分地覆盖第一绝缘层的金属层; 电连接到第一导电类型半导体层的第一电极; 以及电连接到透明电极的第二电极。

公开(公告)号：WO2016129873A2

公开(公告)日：2016-08-18

申请号：PCT/KR2016001255

申请日：2016-02-04

Applicant: SEOUL VIOSYS CO LTD

Inventor： KIM JONG KYU ,  LEE SO RA ,  YOON YEO JIN ,  KIM JAE KWON ,  LEE JOON SUP ,  KANG MIN WOO ,  OH SE HEE ,  KIM HYUN A ,  LIM HYOUNG JIN

IPC: H01L33/64 ,  H01L33/08 ,  H01L33/38 ,  H01L33/58 ,  H01L33/60

CPC classification number: H01L27/156 ,  H01L33/08 ,  H01L33/36 ,  H01L33/38 ,  H01L33/58 ,  H01L33/60 ,  H01L33/62 ,  H01L33/64 ,  H01L2224/16225 ,  H01L2224/32245 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2933/0016 ,  H01L2924/00012

Abstract: The present invention relates to a light-emitting element, and the light-emitting element according to one embodiment of the present invention comprises: a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode and a second contact electrode located on the light-emitting structure, and respectively making ohmic contact with the first conductive semiconductor layer and the second conductive semiconductor layer; an insulation layer for covering a part of the first contact electrode and the second contact electrode so as to insulate the first contact electrode and the second contact electrode; a first electrode pad and a second electrode pad electrically connected to each of the first contact electrode and the second contact electrode; and a radiation pad formed on the insulation layer, and radiating heat generated from the light-emitting structure, wherein at least three plane-shaped sides of the radiation pad can be exposed to the outer side.

Abstract translation: 本发明涉及一种发光元件，根据本发明的一个实施例的发光元件包括：发光结构，包括第一导电半导体层，第二导电半导体层和插入有源层的有源层 在所述第一导电半导体层和所述第二导电半导体层之间; 位于发光结构上的第一接触电极和第二接触电极，分别与第一导电半导体层和第二导电半导体层欧姆接触; 绝缘层，用于覆盖所述第一接触电极和所述第二接触电极的一部分，以使所述第一接触电极和所述第二接触电极绝缘; 电连接到第一接触电极和第二接触电极中的每一个的第一电极焊盘和第二电极焊盘; 以及形成在所述绝缘层上的辐射焊盘，并且辐射从所述发光结构产生的热，其中所述辐射焊盘的至少三个平面形状的侧面可以暴露于所述外侧。

公开(公告)号：WO2016108423A1

公开(公告)日：2016-07-07

申请号：PCT/KR2015/012156

申请日：2015-11-12

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： MOON, Soo Young ,  HAN, Yu Dae

IPC: H01L33/22 ,  H01L33/06

CPC classification number: H01L33/06 ,  H01L33/025 ,  H01L33/145 ,  H01L33/24 ,  H01L33/32 ,  H01L33/325

Abstract: A light emitting device is disclosed. The light emitting device includes an n-type nitride semiconductor layer; a V-pit creation layer; an active layer; a p-type nitride semiconductor layer; a V-pit; a high resistance embedment layer; and an n-type doped region overlapping at least part of the active layer, wherein the active layer includes a multi-quantum well structure including pluralities of barrier layers and well layers, at least one of interfaces between the barrier layers and the well layers is disposed within the n-type doped region, the n-type doped region includes a lower surface and an upper surface, and at least one of the upper and lower surfaces of the n-type doped region does not overlap the interfaces between the barrier layers and the well layers.

Abstract translation: 公开了一种发光器件。 发光器件包括n型氮化物半导体层; V坑创建层; 活性层 p型氮化物半导体层; 一个V坑; 高电阻嵌入层; 以及与所述有源层的至少一部分重叠的n型掺杂区域，其中所述有源层包括包含多个势垒层和阱层的多量子阱结构，所述势垒层和阱层之间的至少一个界面是 设置在n型掺杂区域内，n型掺杂区域包括下表面和上表面，并且n型掺杂区域的上表面和下表面中的至少一个不与阻挡层之间的界面重叠 和井层。

公开(公告)号：WO2016108422A1

公开(公告)日：2016-07-07

申请号：PCT/KR2015/012104

申请日：2015-11-11

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： KIM, Min Kyu ,  YUN, Jun Ho ,  CHO, Sung Ryoung

IPC: H01L33/22 ,  H01L33/36

CPC classification number: H01L33/20 ,  H01L33/0025 ,  H01L33/0075

Abstract: Disclosed are a vertical type light emitting diode and a method of fabricating the same. The vertical type light emitting diode includes: a support substrate; a p-type electrode formed on the support substrate; a p-type semiconductor layer formed on the p-type electrode; an active layer formed on the p-type semiconductor layer; an n-type semiconductor layer formed on the active layer; a nitride semiconductor layer formed on the n-type semiconductor layer and having V-pits filled with the nitride semiconductor layer; and an n-type electrode formed on the nitride semiconductor layer, wherein a plurality of protrusions formed on a growth substrate for growing the nitride semiconductor layer causes the V-pits to be formed in alignment with the plurality of protrusions, and V-pit regions have higher resistance than surrounding regions.

Abstract translation: 公开了垂直型发光二极管及其制造方法。 垂直型发光二极管包括：支撑基板; 形成在所述支撑基板上的p型电极; 形成在p型电极上的p型半导体层; 形成在p型半导体层上的有源层; 形成在有源层上的n型半导体层; 形成在所述n型半导体层上并具有填充有所述氮化物半导体层的V凹点的氮化物半导体层; 以及形成在所述氮化物半导体层上的n型电极，其中形成在生长衬底上的用于使所述氮化物半导体层生长的多个突起使得形成与所述多个突起对准的所述V形凹坑，并且V凹坑区域 具有比周边地区更高的抵抗力。

公开(公告)号：WO2016089088A1

公开(公告)日：2016-06-09

申请号：PCT/KR2015/013004

申请日：2015-12-01

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： JEONG, Jae-Hak ,  SONG, Hyun-Su ,  KOO, Jong-Hyun

IPC: A61L9/16 ,  A61L9/20 ,  B01D53/86

CPC classification number: B01D53/885 ,  A61L9/205 ,  A61L2209/14 ,  B01D2255/802

Abstract: The disclosed invention relates to a multifunctional photocatalytic module which includes a duct 10 having a flow cross section with long sides 11 and short sides 12; a suction port 13 and a discharge port 14, the suction port 13 and the discharge port 14 being informed on both ends of the duct; a fan 20 disposed close to the suction port in the duct, the fan introducing air from the suction port and apply pressure to the air toward the discharge port; a photocatalytic filter 40 disposed close to the discharge port in the duct; and a light source disposed between the photocatalytic filter 40 and the fan 20 and configured to radiate ultraviolet light toward the photocatalytic filter.

Abstract translation: 所公开的发明涉及一种多功能光催化剂组件，其包括具有长边11和短边12的流动横截面的管道10; 吸入口13和排出口14，在管道的两端通知吸入口13和排出口14; 风扇20，其布置在靠近管道中的吸入口处，风扇从吸入口引入空气并向排出口施加压力至空气; 设置在管道中的排出口附近的光催化过滤器40; 以及设置在光催化过滤器40和风扇20之间并被配置为向光催化过滤器辐射紫外光的光源。

公开(公告)号：WO2016064134A2

公开(公告)日：2016-04-28

申请号：PCT/KR2015/010874

申请日：2015-10-15

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： KIM, Chang Yeon ,  PARK, Ju Yong ,  SON, Sung Su

IPC: H01L33/36

CPC classification number: H01L33/42 ,  H01L33/382 ,  H01L33/405

Abstract: A light emitting device and a method of fabricating the same. The light emitting device includes: a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, an active layer, and a partially exposed region of an upper surface of the first conductive type semiconductor layer; a transparent electrode disposed on the second conductive type semiconductor layer; a first insulation layer including a first opening and a second opening; a metal layer at least partially covering the first insulation layer; a first electrode electrically connected to the first conductive type semiconductor layer; and a second electrode electrically connected to the transparent electrode.

Abstract translation: 发光器件及其制造方法。 发光器件包括：发光结构，包括第一导电类型半导体层，第二导电类型半导体层，有源层和第一导电类型半导体层的上表面的部分曝光区域; 设置在所述第二导电型半导体层上的透明电极; 包括第一开口和第二开口的第一绝缘层; 至少部分地覆盖所述第一绝缘层的金属层; 电连接到第一导电类型半导体层的第一电极; 和与透明电极电连接的第二电极。