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    Acoustic transducer and microphone using acoustic transducer
    113.
    发明专利
    Acoustic transducer and microphone using acoustic transducer 有权
    声学传感器和麦克风使用声学传感器

    公开(公告)号：JP2011250169A

    公开(公告)日：2011-12-08

    申请号：JP2010121680

    申请日：2010-05-27

    Applicant: Omron Corp ,  Stmicroelectronics Srl ,  エスティーマイクロエレクトロニクス エス.アール.エル.STMicroelectronics S.r.l. ,  オムロン株式会社

    Inventor： KASAI TAKASHI ,  UCHIDA YUKI ,  HORIMOTO YASUHIRO ,  SEBASTIANO CONTI

    IPC: H04R19/04

    CPC classification number: H04R3/00 ,  H04R19/016

    Abstract: PROBLEM TO BE SOLVED: To provide an acoustic sensor in which shock resistance is improved.SOLUTION: An acoustic sensor 11 comprises a vibration film 22 and a fixed film 23 formed on the upper surface of a semiconductor substrate and detects a sonic wave by changes in a capacitance between a vibration electrode 22a of the vibration film 22 and a fixed electrode 23a of the fixed film 23. The fixed film 23 has a plurality of sound hole parts 32 bored to allow the sonic wave to reach the vibration film 22 from outside, and the fixed electrode 23a is formed so that the boundary of an edge 40 does not cross the sound hole parts 32.

    Abstract translation: 要解决的问题：提供一种提高抗冲击性的声学传感器。 解决方案：声学传感器11包括形成在半导体衬底的上表面上的振动膜22和固定膜23，并且通过振动膜22的振动电极22a和 固定膜23的固定电极23a具有多个孔洞部分32，它们使声波从外部到达振动膜22，固定电极23a形成为使得边缘的边界 40不穿过声孔部件32.版权所有（C）2012，JPO＆INPIT

    Micro-electro-mechanical gyroscope with position control drive, and method for controlling micro-electro-mechanical gyroscope
    114.
    发明专利
    Micro-electro-mechanical gyroscope with position control drive, and method for controlling micro-electro-mechanical gyroscope 有权
    具有位置控制驱动的微电子机械陀螺仪和用于控制微机电陀螺仪的方法

    公开(公告)号：JP2011047921A

    公开(公告)日：2011-03-10

    申请号：JP2010126881

    申请日：2010-06-02

    Applicant: Stmicroelectronics Srl ,  エスティーマイクロエレクトロニクス エス.アール.エル.STMicroelectronics S.r.l.

    Inventor： PRANDI LUCIANO ,  CAMINADA CARLO

    IPC: B81B3/00 ,  G01C19/56

    CPC classification number: G01C19/56 ,  G01C19/5726 ,  G01C19/5762 ,  H03F3/70

    Abstract: PROBLEM TO BE SOLVED: To provide a micro-electro-mechanical gyroscope, along with a method for controlling the micro-electro-mechanical gyroscope, suitable for a wide-range development which is precise and whose reliability is high.
    SOLUTION: The MEMS gyroscope includes: a minute structure 2 having a fixed structure 6, a movable drive mass body 7 concerning the fixed structure 6 in accordance to a drive axis X, and a movable detection mass body 8 mechanically connected to the drive mass body 7 so as to be a motion state in accordance to the drive axis X and concerning the drive mass body 7 in accordance with a drive axis Y in response to rotation of the minute structure 2; and a drive device 3 for maintaining the drive mass body 7 at a drive frequency in a vibration state. The drive device 3 includes: a discrete time detection interface 20 for detecting the position of the drive mass body 7 concerning the drive axis X; and control means 21, 23, 24, 25 for controlling a drive frequency on the basis of the position of the drive mass body 7.
    COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题：提供微机电陀螺仪以及用于控制微机电陀螺仪的方法，适用于精确且可靠性高的广泛开发。 解决方案：MEMS陀螺仪包括：具有固定结构6的微小结构2，关于根据驱动轴线X的固定结构6的可移动驱动质量体7和机械地连接到驱动轴线X的可动检测质量体8 驱动质量体7，以响应于微小结构2的旋转，根据驱动轴线X和与驱动质量体7相关的驱动轴线Y的运动状态; 以及用于将驱动质量体7保持在振动状态的驱动频率的驱动装置3。 驱动装置3包括：离散时间检测接口20，用于检测驱动质量体7关于驱动轴线X的位置; 以及用于基于驱动质量体7的位置来控制驱动频率的控制装置21,23,24,25。版权所有（C）2011，JPO＆INPIT

    Production method and the integrated edge structure of the high-voltage semiconductor device for an integrated edge structure
    115.
    发明专利
    Production method and the integrated edge structure of the high-voltage semiconductor device for an integrated edge structure 有权

    公开(公告)号：JP4597293B2

    公开(公告)日：2010-12-15

    申请号：JP34835599

    申请日：1999-12-08

    Applicant: エスティーマイクロエレクトロニクス エス.アール.エル.STMicroelectronics S.r.l.

    Inventor： フリシナ フェルッチオ

    IPC: H01L29/78 ,  H01L21/336 ,  H01L29/06

    CPC classification number: H01L29/66712 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/7802 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Method of manufacturing an edge structure for a high voltage semiconductor device, comprising a first step of forming a first semiconductor layer (41) of a first conductivity type, a second step of forming a first mask (37) over the top surface of the first semiconductor layer (41), a third step of removing portions of the first mask (37) in order to form at least one opening (51) in it, a fourth step of introducing dopant of a second conductivity type in the first semiconductor layer (41) through the at least one opening (51), a fifth step of completely removing the first mask (37) and of forming a second semiconductor layer (42) of the first conductivity type over the first semiconductor layer (41), a sixth step of diffusing the dopant implanted in the first semiconductor layer (41) in order to form a doped region (220) of the second conductivity type in the first and second semiconductor layers (41, 42). The second step up to the sixth step are repeated at least one time in order to form a final edge structure comprising a number of superimposed semiconductor layers (41, 42, 43, 44, 45, 46) of the first conductivity type and at least two columns of doped regions (220, 230, 240, 250, 260) of the second conductivity type, the columns being inserted in the number of superimposed semiconductor layers (41, 42, 43, 44, 45, 46) and formed by means of superimposition of the doped regions (220, 230, 240, 250, 260) subsequently implanted through the mask openings, the column near the high voltage semiconductor device being deeper than the column farther to the high voltage semiconductor device.

    Method and hardware system for driving stepper motor in feed-forward voltage mode
    116.
    发明专利
    Method and hardware system for driving stepper motor in feed-forward voltage mode 有权
    用于在前馈电压模式下驱动步进电机的方法和硬件系统

    公开(公告)号：JP2010268675A

    公开(公告)日：2010-11-25

    申请号：JP2010106511

    申请日：2010-05-06

    Applicant: Dora Spa ,  Stmicroelectronics Srl ,  エスティーマイクロエレクトロニクスエス.アール.エルSTMicroelectronics S.r.l. ,  ドラ エス.ピー.エー.

    Inventor： BAGARELLI FULVIO GIACOMO ,  MARANO VINCENZO ,  POLI ENRICO

    IPC: H02P8/00

    CPC classification number: H02P8/12 ,  H02P8/22

    Abstract: PROBLEM TO BE SOLVED: To suppress a phase current generated in winding of a stator over a full speed range of motor when driving a stepper motor in a voltage mode. SOLUTION: A method of driving a stepper motor in feed-forward voltage mode includes (A) a step of setting the amplitude of a sinusoidal phase voltage of the stepper motor to a predetermined value to rotate the stepper motor at a desired speed. The predetermined value is the sum of a back-electromotive force (BEMF) estimated via a function of the desired speed and a product of a desired amplitude of a phase current (Iphase) and an estimated absolute value of the impedance of the stepper motor. COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题：在电压模式下驱动步进电机时，抑制在电动机的全速范围内的定子绕组中产生的相电流。 解决方案：一种以前馈电压模式驱动步进电动机的方法包括（A）将步进电动机的正弦相电压的振幅设定为预定值的步骤，以使步进电动机以期望的速度旋转 。 预定值是通过期望速度的函数估计的反电动势（BEMF）和相电流（Iphase）的期望幅度与步进电动机的阻抗的估计绝对值的乘积之和。 版权所有（C）2011，JPO＆INPIT

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