Lithographic apparatus and method
    112.
    发明专利
    Lithographic apparatus and method 有权
    LITHOGRAPHIC设备和方法

    公开(公告)号:JP2012222356A

    公开(公告)日:2012-11-12

    申请号:JP2012085380

    申请日:2012-04-04

    CPC classification number: G03F7/70916 G03F7/70808 G03F7/70933

    Abstract: PROBLEM TO BE SOLVED: To provide a lithographic apparatus and method which can prevent or restrict passage of contamination into a projection system of a lithographic apparatus.SOLUTION: A lithographic apparatus includes a projection system that includes a plurality of reflective optics. One of the reflective optics is provided with an opening which passes through the reflective optic. The opening is closed by a covering layer that is substantially transparent to EUV radiation. The covering layer prevents contamination from entering the projection system, while allowing patterned EUV radiation to pass from the projection system onto a substrate.

    Abstract translation: 要解决的问题:提供可以防止或限制污染物进入光刻设备的投影系统的光刻设备和方法。 解决方案:光刻设备包括包括多个反射光学器件的投影系统。 反射光学器件中的一个设置有穿过反射光学器件的开口。 开口由对EUV辐射基本透明的覆盖层封闭。 覆盖层防止污染物进入投影系统,同时允许图案化的EUV辐射从投影系统传递到基底上。 版权所有(C)2013,JPO&INPIT

    Radiation source, lithographic device, and device manufacturing method
    113.
    发明专利
    Radiation source, lithographic device, and device manufacturing method 有权
    辐射源,光刻设备和器件制造方法

    公开(公告)号:JP2012199582A

    公开(公告)日:2012-10-18

    申请号:JP2012129640

    申请日:2012-06-07

    CPC classification number: G03F7/70916 G03F7/70033 G03F7/70175 H05G2/003

    Abstract: PROBLEM TO BE SOLVED: To provide a radiation source having a contamination barrier for reducing a deposition rate of ions, atoms, molecules, granular debris and the like on a collector mirror of an EUV radiation source.SOLUTION: A radiation source includes a plasma formation portion, at which fuel comes into contact with a radiation beam to form a plasma. A collector with a mirror collects and reflects EUV radiation generated at a first focal point toward a second focal point. A contamination barrier is positioned so that a peripheral edge of the contamination barrier does not block more than 50% of a solid angle defined by a mirror at the second focal point, and thereby, the EUV radiation reflected by the collector mirror passes through the contamination barrier and is not attenuated excessively. The contamination barrier functions to trap fuel materials such as ions, atoms, molecules or nano droplets from the plasma, so as to prevent them from being accumulated on the collector mirror. A gas extraction port may be provided near the plasma formation portion to restrain diffusion of the fuel debris and contamination toward the collector mirror.

    Abstract translation: 要解决的问题:提供一种具有污染屏障的辐射源,用于降低EUV辐射源的集光镜上的离子,原子,分子,颗粒状碎屑等的沉积速率。 解决方案:辐射源包括等离子体形成部分,燃料与辐射束接触以形成等离子体。 具有反射镜的收集器收集并反射在第一焦点处产生的EUV辐射朝向第二焦点。 定位污染屏障,使得污染屏障的周边边缘不会阻挡由第二焦点上的反射镜限定的立体角的50%以上,从而由收集镜反射的EUV辐射通过污染物 并且不会过度衰减。 污染屏障用于从等离子体捕获诸如离子,原子,分子或纳米液滴的燃料材料,以防止它们聚集在收集器反射镜上。 可以在等离子体形成部分附近设置气体提取口,以限制燃料碎屑的扩散和污染朝向收集器反射镜。 版权所有(C)2013,JPO&INPIT

    Radiation source apparatus, lithographic apparatus, method of generating and delivering radiation and method for manufacturing device
    115.
    发明专利
    Radiation source apparatus, lithographic apparatus, method of generating and delivering radiation and method for manufacturing device 有权
    辐射源设备,光刻设备,产生和传送辐射的方法和制造设备的方法

    公开(公告)号:JP2011192989A

    公开(公告)日:2011-09-29

    申请号:JP2011047531

    申请日:2011-03-04

    CPC classification number: G03F7/70916 H05G2/003

    Abstract: PROBLEM TO BE SOLVED: To provide an alternative contaminant trap suitable for an EUV apparatus with a hydrogen or similar atmosphere.
    SOLUTION: A contaminant trap is used in an EUV radiation source apparatus. An EUV radiation beam is generated and focused through a low pressure gaseous atmosphere into a virtual source point. The EUV radiation creates a plasma in the low pressure hydrogen atmosphere through which it passes. A contaminant trap including electrodes is located in or around radiation beam as it approaches the virtual source point. A DC biasing source is connected to the electrodes to create an electric field oriented to deflect out of the beam path contaminant particles that have been negatively charged by the plasma. Additional RF electrodes and/or an ionizer enhance the plasma to increase the charging of the particles. The deflecting electrodes can be operated with RF bias for a short time, to ensure dissipation of the enhanced plasma.
    COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题:提供适用于具有氢气或类似气氛的EUV设备的替代污染物阱。 解决方案:在EUV辐射源设备中使用污染物阱。 产生EUV辐射束并通过低压气体气氛聚焦成虚拟源点。 EUV辐射在其通过的低压氢气氛中产生等离子体。 当辐射束接近虚拟源点时,包括电极的污染物陷阱位于辐射束内或周围。 DC偏置源连接到电极以产生电场,该电场被定向以偏离由等离子体带负电的光束路径污染物颗粒。 附加的RF电极和/或电离器增强等离子体以增加颗粒的充电。 偏转电极可以用RF偏压短时间操作,以确保增强等离子体的耗散。 版权所有(C)2011,JPO&INPIT

    Lithographic apparatus, device manufacturing method and computer readable medium
    116.
    发明专利
    Lithographic apparatus, device manufacturing method and computer readable medium 有权
    平面设备,设备制造方法和计算机可读介质

    公开(公告)号:JP2011146703A

    公开(公告)日:2011-07-28

    申请号:JP2011001569

    申请日:2011-01-07

    CPC classification number: G03B27/52 G03B27/54 G03F7/70266 G03F7/70891

    Abstract: PROBLEM TO BE SOLVED: To provide a lithographic apparatus with an EUV (Extreme UltraViolet) reflector that can maintain an accurate surface shape irrespective of a non-uniform heat load from a radiation beam.
    SOLUTION: The lithographic apparatus includes: a thermal actuator including a cooler for cooling part of the reflector and a heater for heating part of the reflector; and a control system for controlling the thermal actuator in order to change a relative amount of heating and cooling applied to part of the reflector so as to apply a force to the reflector. In the lithographic apparatus, part of a reflector is heated and cooled. The rate of heating and/or the rate of cooling is adjusted to adjust a temperature of the part. The change in a temperature of the part exerts a force on the reflector, which changes its shape.
    COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题:为光刻设备提供能够保持精确表面形状的EUV(Extreme UltraViolet)反射器,而与来自辐射束的不均匀的热负载无关。 光刻设备包括:热致动器,其包括用于冷却反射器的一部分的冷却器和用于加热反射器的一部分的加热器; 以及用于控制热致动器以便改变施加到反射器的一部分的加热和冷却的相对量以便向反射器施加力的控制系统。 在光刻设备中,反射体的一部分被加热和冷却。 调节加热速率和/或冷却速率以调节部件的温度。 部件的温度变化在反射器上施加力,其改变其形状。 版权所有(C)2011,JPO&INPIT

    Lithographic apparatus and device manufacturing method
    117.
    发明专利
    Lithographic apparatus and device manufacturing method 有权
    LITHOGRAPHIC装置和装置制造方法

    公开(公告)号:JP2011109093A

    公开(公告)日:2011-06-02

    申请号:JP2010251367

    申请日:2010-11-10

    CPC classification number: G03F7/70775 G01D5/38

    Abstract: PROBLEM TO BE SOLVED: To provide an alternative encode type position measurement system.
    SOLUTION: The position measurement system for measuring a position of a movable object relative to another object includes: two or more one dimensional encoder heads that are installed to one of the movable object and another object and are each capable of emitting a measurement beam along a measurement direction; one or a plurality of reference targets that are installed to the other of the movable object and another object, and each include a plane having a grid or a diffraction grating that collaborates with two or more one dimensional encoder heads; and a processor for calculating the position of the object based on the output of the two or more one dimensional encoder heads, wherein the measurement direction of each of the two or more one dimensional encoder heads is non-vertical to the plane of each reference target.
    COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题:提供替代的编码型位置测量系统。 解决方案:用于测量可移动物体相对于另一物体的位置的位置测量系统包括:安装到可移动物体和另一物体中的一个上的两个或更多个一维编码器头,并且能够发射测量 沿测量方向; 一个或多个参考目标被安装到另一个可移动物体和另一物体上,并且每个都包括具有与两个或更多个一维编码器头协作的栅格或衍射光栅的平面; 以及处理器,用于基于两个或更多个一维编码器头的输出来计算对象的位置,其中两个或更多个一维编码器头中的每一个的测量方向与每个参考目标的平面不垂直 。 版权所有(C)2011,JPO&INPIT

    Lithography device
    118.
    发明专利
    Lithography device 有权
    LITHOGRAPHY设备

    公开(公告)号:JP2010239146A

    公开(公告)日:2010-10-21

    申请号:JP2010132174

    申请日:2010-06-09

    CPC classification number: G03F7/70875 B05C9/12 G03F7/70341

    Abstract: PROBLEM TO BE SOLVED: To provide a suitable method of manufacturing a device that eases a problem related to residual immersion liquid in an immersion lithography device. SOLUTION: An active drying station ADS for actively removing liquid from an object W of an immersion lithography device, a substrate table WT, or both is provided between a projection system and a substrate post-exposure processing module. The substrate table WT carries the object W to the active drying station ADS. The active drying station ADS includes a gas flow means. COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题:提供一种适合于制造在浸没式光刻装置中减轻与残留浸液的问题有关的装置的方法。 解决方案:在投影系统和基板后曝光处理模块之间设置主动干燥台ADS,用于从浸没式光刻装置,衬底台WT或二者的物体W主动去除液体。 衬底台WT将物体W运送到主动干燥站ADS。 主动干燥站ADS包括气流装置。 版权所有(C)2011,JPO&INPIT

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