Abstract:
PROBLEM TO BE SOLVED: To provide a system that reduces lithography errors caused by immersion liquid.SOLUTION: A lithographic apparatus comprises: an illumination system configured to adjust a radiation beam; a support body configured to support a pattern forming device capable of imparting a pattern to the radiation beam in a cross section of the radiation beam to form a pattern formed radiation beam; a substrate table configured to hold a substrate; a projection system configured to project the pattern formed radiation beam onto a target portion of the substrate; a liquid supply system configured to fill at least a part of space between a final element of the projection system and the substrate with liquid; a seal member arranged to substantially contain the liquid within the space between the final element of the projection system and the substrate; and elements to control and/or compensate for evaporation of the immersion liquid from the substrate.
Abstract:
PROBLEM TO BE SOLVED: To provide a lithographic apparatus and method which can prevent or restrict passage of contamination into a projection system of a lithographic apparatus.SOLUTION: A lithographic apparatus includes a projection system that includes a plurality of reflective optics. One of the reflective optics is provided with an opening which passes through the reflective optic. The opening is closed by a covering layer that is substantially transparent to EUV radiation. The covering layer prevents contamination from entering the projection system, while allowing patterned EUV radiation to pass from the projection system onto a substrate.
Abstract:
PROBLEM TO BE SOLVED: To provide a radiation source having a contamination barrier for reducing a deposition rate of ions, atoms, molecules, granular debris and the like on a collector mirror of an EUV radiation source.SOLUTION: A radiation source includes a plasma formation portion, at which fuel comes into contact with a radiation beam to form a plasma. A collector with a mirror collects and reflects EUV radiation generated at a first focal point toward a second focal point. A contamination barrier is positioned so that a peripheral edge of the contamination barrier does not block more than 50% of a solid angle defined by a mirror at the second focal point, and thereby, the EUV radiation reflected by the collector mirror passes through the contamination barrier and is not attenuated excessively. The contamination barrier functions to trap fuel materials such as ions, atoms, molecules or nano droplets from the plasma, so as to prevent them from being accumulated on the collector mirror. A gas extraction port may be provided near the plasma formation portion to restrain diffusion of the fuel debris and contamination toward the collector mirror.
Abstract:
PROBLEM TO BE SOLVED: To provide a lithographic apparatus and a method of manufacturing a device.SOLUTION: A lithographic projection apparatus for using with immersion liquid placed between a final element of a projection system and a substrate W is disclosed. A plurality of methods for protecting the projection system, a substrate table, and components of a liquid constraint system are disclosed. These methods include: a step of applying a protective coating on the final element 20 of the projection system; and a step of providing sacrificial bodies to an upstream side of the components. A two-component final optical element of CaFis also disclosed.
Abstract:
PROBLEM TO BE SOLVED: To provide an alternative contaminant trap suitable for an EUV apparatus with a hydrogen or similar atmosphere. SOLUTION: A contaminant trap is used in an EUV radiation source apparatus. An EUV radiation beam is generated and focused through a low pressure gaseous atmosphere into a virtual source point. The EUV radiation creates a plasma in the low pressure hydrogen atmosphere through which it passes. A contaminant trap including electrodes is located in or around radiation beam as it approaches the virtual source point. A DC biasing source is connected to the electrodes to create an electric field oriented to deflect out of the beam path contaminant particles that have been negatively charged by the plasma. Additional RF electrodes and/or an ionizer enhance the plasma to increase the charging of the particles. The deflecting electrodes can be operated with RF bias for a short time, to ensure dissipation of the enhanced plasma. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a lithographic apparatus with an EUV (Extreme UltraViolet) reflector that can maintain an accurate surface shape irrespective of a non-uniform heat load from a radiation beam. SOLUTION: The lithographic apparatus includes: a thermal actuator including a cooler for cooling part of the reflector and a heater for heating part of the reflector; and a control system for controlling the thermal actuator in order to change a relative amount of heating and cooling applied to part of the reflector so as to apply a force to the reflector. In the lithographic apparatus, part of a reflector is heated and cooled. The rate of heating and/or the rate of cooling is adjusted to adjust a temperature of the part. The change in a temperature of the part exerts a force on the reflector, which changes its shape. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an alternative encode type position measurement system. SOLUTION: The position measurement system for measuring a position of a movable object relative to another object includes: two or more one dimensional encoder heads that are installed to one of the movable object and another object and are each capable of emitting a measurement beam along a measurement direction; one or a plurality of reference targets that are installed to the other of the movable object and another object, and each include a plane having a grid or a diffraction grating that collaborates with two or more one dimensional encoder heads; and a processor for calculating the position of the object based on the output of the two or more one dimensional encoder heads, wherein the measurement direction of each of the two or more one dimensional encoder heads is non-vertical to the plane of each reference target. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a suitable method of manufacturing a device that eases a problem related to residual immersion liquid in an immersion lithography device. SOLUTION: An active drying station ADS for actively removing liquid from an object W of an immersion lithography device, a substrate table WT, or both is provided between a projection system and a substrate post-exposure processing module. The substrate table WT carries the object W to the active drying station ADS. The active drying station ADS includes a gas flow means. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an immersion lithographic projection apparatus. SOLUTION: The immersion lithographic projection apparatus is disclosed in which an immersion liquid is sealed between a final element of a projection system and a substrate. Use of both hydrophobic and hydrophilic layers on various elements of the apparatus is disclosed. The use of the layers helps to prevent formation of bubbles in the immersion liquid and reduce residue on the elements after being immersed in the liquid. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an immersion type lithography projection apparatus with improved functionality. SOLUTION: The lithography projection apparatus includes: a radiation system Ex, IL also equipped with a radiation source LA, for providing the projection beams PB of radiation; a first object table (mask table) MT connected to a first positioning means, for correctly positioning a mask with respect to a member PL; a second object table (substrate table) WT connected to a second positioning means, for correctly positioning a substrate with respect to the member PL; and a projection system PL for forming an image of the radiated part of the mask MA on the target part C of the substrate W. COPYRIGHT: (C)2010,JPO&INPIT