公开(公告)号：JP2013033227A

公开(公告)日：2013-02-14

申请号：JP2012143050

申请日：2012-06-26

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： KATO KEITA ,  SHIRAKAWA MICHIHIRO ,  OTANI TADAHIRO ,  NAKAMURA ATSUSHI ,  TAKAHASHI HIDETOMO ,  IWATO KAORU

IPC: G03F7/095 ,  G03F7/038 ,  G03F7/039 ,  G03F7/11 ,  G03F7/32 ,  H01L21/027

CPC classification number: G03F7/325 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/095

Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method, by which a pattern with good line width roughness (LWR) and a rectangular profile can be formed, and to provide a multilayer resist pattern formed by the method, a multilayer film for development with an organic solvent suitably used for the pattern forming method, and a resist composition suitably used for the pattern forming method, a method for manufacturing an electronic device, and an electronic device.SOLUTION: The pattern forming method includes steps of: (1) forming a first film on a substrate by using a first resin composition (I); (2) forming a second film on the first film by using a second resin composition (II) different from the resin composition (I); (3) exposing a multilayer film having the first film and the second film; (4) developing the first film and the second film in the exposed multilayer film by using a developing solution containing an organic solvent to form a negative pattern.

Abstract translation: 要解决的问题为了提供一种图案形成方法，通过该图案形成方法可以形成具有良好的线宽粗糙度（LWR）和矩形轮廓的图案，并且提供通过该方法形成的多层抗蚀剂图案，多层膜 用于适合用于图案形成方法的有机溶剂的显影，以及适用于图案形成方法的抗蚀剂组合物，电子器件的制造方法和电子器件。 图案形成方法包括以下步骤：（1）通过使用第一树脂组合物（I）在基材上形成第一膜; （2）通过使用与树脂组合物（I）不同的第二树脂组合物（II）在第一膜上形成第二膜; （3）曝光具有第一膜和第二膜的多层膜; （4）通过使用含有有机溶剂的显影液形成负图案，使曝光的多层膜中的第一膜和第二膜显影。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2012068544A

公开(公告)日：2012-04-05

申请号：JP2010214564

申请日：2010-09-24

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： IWATO KAORU ,  KATO KEITA

IPC: G03F7/038 ,  C07C69/716 ,  C07C69/75 ,  G03F7/004 ,  G03F7/039 ,  G03F7/32 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method, a chemically amplifying resist composition and a resist film, which are excellent in all of sensitivity, reduction in development defects and a pattern profile in the formation of a negative pattern using a developing solution containing an organic solvent.SOLUTION: The pattern forming method includes steps of: (a) forming a film of a chemically amplified resist composition which contains (A) a resin showing an increase in the polarity and a decrease in the solubility with a developing solution containing an organic solvent by an action of an acid, (B) a compound generating an acid by irradiation with active rays or radiation, and (C) a compound decomposed by an action of an acid to improve volatility, included by 3 mass% or more with respect to the solid content of the resist composition; (b) exposing the film; and (c) developing the film with a developing solution containing an organic solvent.

Abstract translation: 要解决的问题：提供一种图案形成方法，化学放大抗蚀剂组合物和抗蚀剂膜，其在所有的灵敏度，显影缺陷的减少和形成负图案中的图案轮廓方面均优异，使用 显影液含有机溶剂。 图案形成方法包括以下步骤：（a）形成化学放大型抗蚀剂组合物的膜，其含有（A）显示出极性增加的树脂和与含有 有机溶剂通过酸的作用，（B）通过用活性射线或辐射照射产生酸的化合物，和（C）通过酸的作用分解以提高挥发性的化合物，包括3质量％以上， 相对于抗蚀剂组合物的固体含量; （b）曝光胶片; 和（c）用含有机溶剂的显影液显影该膜。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2012032788A

公开(公告)日：2012-02-16

申请号：JP2011135554

申请日：2011-06-17

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： ENOMOTO YUICHIRO ,  TARUYA SHINJI ,  KAMIMURA SATOSHI ,  IWATO KAORU ,  KATO KEITA ,  FUJII KANA

IPC: G03F7/32 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027

CPC classification number: G03F7/325 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/0397 ,  G03F7/20 ,  G03F7/2041 ,  G03F7/422

Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method capable of forming a pattern with reduced defects due to adhesion of foreign matters, and a developer used for the pattern forming method.SOLUTION: A pattern forming method comprises the steps of: (A) forming a film with a chemically amplified resist composition; (B) exposing the film; and (C) developing the exposed film with a developer containing an organic solvent. A content of an alcohol compound(X) in the developer is 0 ppm or more and less than 500 ppm based on the total mass of the developer.

Abstract translation: 要解决的问题：提供一种能够形成由于异物附着而减少缺陷的图案的图案形成方法和用于图案形成方法的显影剂。 解决方案：图案形成方法包括以下步骤：（A）用化学放大抗蚀剂组合物形成膜; （B）曝光胶片; 和（C）用含有机溶剂的显影剂显影曝光的薄膜。 显影剂中醇化合物（X）的含量相对于显影剂的总质量为0ppm以上且小于500ppm。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2012032446A

公开(公告)日：2012-02-16

申请号：JP2010169595

申请日：2010-07-28

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： KAMIMURA SATOSHI ,  IWATO KAORU ,  ENOMOTO YUICHIRO ,  KATAOKA SHOHEI ,  KATO KEITA ,  SAITO SHOICHI

IPC: G03F7/32 ,  G03F7/038 ,  G03F7/039 ,  G03F7/38 ,  G03F7/40 ,  H01L21/027

CPC classification number: G03F7/2041 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/325 ,  G03F7/40

Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method which enables to form a pattern with few development defects, and an organic processing liquid used in the method.SOLUTION: The pattern forming method includes: (a) forming a film using a chemically amplified resist composition; (b) exposing the film; and (c) processing the exposed film using an organic processing liquid. The processing liquid contains an organic solvent having a standard boiling point of ≥175°C and a content rate of the solvent in the processing liquid is

Abstract translation: 要解决的问题：提供能够形成具有很少显影缺陷的图案的图案形成方法和在该方法中使用的有机处理液。 图案形成方法包括：（a）使用化学放大抗蚀剂组合物形成膜; （b）曝光胶片; 和（c）使用有机处理液处理曝光的膜。 处理液含有标准沸点≥175℃的有机溶剂，处理液中的溶剂含量<30质量％。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2012008500A

公开(公告)日：2012-01-12

申请号：JP2010146787

申请日：2010-06-28

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： IWATO KAORU ,  KATAOKA SHOHEI

IPC: G03F7/039 ,  G03F7/038 ,  G03F7/32 ,  H01L21/027

CPC classification number: G03F7/0046 ,  G03F7/0397 ,  G03F7/2041 ,  G03F7/325 ,  Y10S430/108

Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method, a chemically amplified resist composition and a resist film, with high resolution and excellent pattern shape, capable of reducing LWR.SOLUTION: A pattern forming method includes: (1) a step for forming a film from a chemically amplified resist composition containing (A) a resin in which polarity is increased and solubility in a developer containing an organic solvent is reduced by action of acid, (B) a compound that generates acid by irradiating active light or radiation, and (C) a solvent; (2) a step for exposing the film; and (3) a step for developing using the developer containing the organic solvent. The resin (A) has a structure in which polar groups are protected with a leaving group that leaves when decomposed by action of acid; and the leaving group includes a fluorine atom.

Abstract translation: 要解决的问题：提供能够降低LWR的图案形成方法，化学放大型抗蚀剂组合物和抗蚀剂膜，具有高分辨率和优异的图案形状。 解决方案：图案形成方法包括：（1）从化学放大型抗蚀剂组合物形成膜的步骤，该组合物含有（A）极性增加的树脂，并且通过作用减少在含有有机溶剂的显影剂中的溶解度 的酸，（B）通过照射活性光或辐射而产生酸的化合物和（C）溶剂; （2）曝光胶片的步骤; 和（3）使用含有有机溶剂的显影剂显影的步骤。 树脂（A）具有其中极性基团被离去基团保护的结构，当离子基团通过酸的作用而分解时; 离去基团包含氟原子。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2011248019A

公开(公告)日：2011-12-08

申请号：JP2010119755

申请日：2010-05-25

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： IWATO KAORU ,  TAKAHASHI HIDETOMO ,  HIRANO SHUJI ,  KAMIMURA SATOSHI ,  KATO KEITA

IPC: G03F7/039 ,  G03F7/004 ,  G03F7/038 ,  H01L21/027

CPC classification number: G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/0758 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/325 ,  G03F7/40 ,  Y10T428/24

Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method and an active ray-sensitive or radiation-sensitive resin composition excellent in limit resolution, roughness characteristics, exposure latitude (EL) and bridge defect characteristics.SOLUTION: The pattern forming method comprises: (1) forming a film by using an active ray-sensitive or radiation-sensitive resin composition; (2) exposing the film and (3) developing the exposed film by using a developing solution containing an organic solvent. The active ray-sensitive or radiation-sensitive resin composition contains (A) a resin containing a repeating unit having a structural moiety that is decomposed by irradiation with active rays or radiation to generate an acid, and (B) a solvent.

Abstract translation: 要解决的问题：提供极限分辨率，粗糙度特性，曝光宽容度（EL）和桥梁缺陷特性优异的图案形成方法和主动射线敏感或辐射敏感性树脂组合物。 解决方案：图案形成方法包括：（1）通过使用活性射线敏感或辐射敏感树脂组合物形成膜; （2）使膜曝光，（3）通过使用含有有机溶剂的显影液显影曝光膜。 活性射线敏感性或辐射敏感性树脂组合物含有（A）含有具有结构部分的重复单元的树脂，其通过用活性射线或辐射照射而分解以产生酸，和（B）溶剂。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2011227405A

公开(公告)日：2011-11-10

申请号：JP2010099298

申请日：2010-04-22

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： KATO KEITA ,  TARUYA SHINJI ,  KAMIMURA SATOSHI ,  ENOMOTO YUICHIRO ,  IWATO KAORU

IPC: G03F7/038 ,  G03F7/004 ,  G03F7/32 ,  H01L21/027

CPC classification number: G03F7/0397 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/2041 ,  G03F7/325

Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method allowing exposure latitude (EL) and depth of focus (DOF) to be excellent and allowing reduction of line width roughness (LWR) and residue defect; a chemical amplification resist composition; and a resist film.SOLUTION: Provided is a pattern forming method comprising (I) a process for forming a film with a chemical amplification type resist composition containing (A) a resin, (B) a non-ionic compound generating acid by irradiation of active rays or radiation, (C) a crosslinking agent and (D) a solvent, (II) a process for exposing the film, and (III) a process for developing using a developer containing an organic solvent; a chemical amplification type resist composition used in the pattern forming method; and a resist film formed by the chemical amplification resist composition.

Abstract translation: 要解决的问题：提供允许曝光宽容度（EL）和焦点深度（DOF）优异并且可以减少线宽粗糙度（LWR）和残留缺陷的图案形成方法; 化学放大抗蚀剂组合物; 和抗蚀膜。 解决方案：提供了一种图案形成方法，其包括（I）用含有（A）树脂的化学放大型抗蚀剂组合物形成膜的方法，（B）通过活性射线照射产生酸的非离子化合物 或辐射，（C）交联剂和（D）溶剂，（II）暴露膜的方法，和（III）使用含有机溶剂的显影剂显影的方法; 用于图案形成方法的化学放大型抗蚀剂组合物; 以及由化学增幅抗蚀剂组合物形成的抗蚀剂膜。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2011197339A

公开(公告)日：2011-10-06

申请号：JP2010063408

申请日：2010-03-19

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： MIZUTANI KAZUYOSHI ,  IWATO KAORU ,  TARUYA SHINJI ,  KAMIMURA SATOSHI ,  ENOMOTO YUICHIRO ,  FUJII KANA ,  KATAOKA SHOHEI ,  DOBASHI TORU ,  KATO KEITA

IPC: G03F7/038 ,  G03F7/039 ,  G03F7/32

Abstract: PROBLEM TO BE SOLVED: To provide: a resist composition having excellent development failure performance; and a pattern forming method using the composition.SOLUTION: The resin composition contains: a resin which contains a repeating unit including a group that dissolves by action of acid to generate an alcoholic hydroxy group and decreases the solubility to a developing solution containing an organic solvent by the action of acid; and a compound that generates acid expressed by the following general formula (I) by application of activated light rays or radiation rays, wherein Xf represents each independently, a fluorine atom or an alkyl group substituted with at least one fluorine atom, Rand Rrepresent each independently, a group selected from the group consisting of a hydrogen atom, a fluorine atom, an alkyl group, and an alkyl group substituted with at least one fluorine atom, L represents each independently a single bond or divalent linking group, A represents each independently a group having a cyclic structure, x represents each independently an integer of 1 to 20, y represents each independently an integer of 0 to 10, and z represents each independently an integer of 0 to 10.

Abstract translation: 要解决的问题：提供：具有优异的显影破坏性能的抗蚀剂组合物; 和使用该组合物的图案形成方法。树脂组合物含有：含有重复单元的树脂，该重复单元包括通过酸作用而溶解以产生醇羟基并降低对含有有机溶剂的显影溶液的溶解度的基团 通过酸的作用; 以及通过施加活化的光线或射线产生由以下通式（I）表示的酸的化合物，其中Xf各自独立地为氟原子或被至少一个氟原子取代的烷基，R R R R各自独立地 选自氢原子，氟原子，烷基和被至少一个氟原子取代的烷基的基团，L各自独立地为单键或二价连接基团，A表示各自独立地为 具有环状结构的基团，x表示各自独立地为1〜20的整数，y表示各自独立地为0〜10的整数，z表示各自独立地为0〜10的整数。

公开(公告)号：JP2011186247A

公开(公告)日：2011-09-22

申请号：JP2010052385

申请日：2010-03-09

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： KATO KEITA ,  TARUYA SHINJI ,  KAMIMURA SATOSHI ,  ENOMOTO YUICHIRO ,  IWATO KAORU

IPC: G03F7/004 ,  C08F220/10 ,  G03F7/038 ,  G03F7/039 ,  G03F7/32 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method that excels in exposure latitude and sensitivity, which can form a pattern that also excels in line-width variation, and to provide a chemically-amplified resist composition using the method. SOLUTION: The method for forming a pattern includes exposing a film of the chemically-amplified resist composition containing (A) a resin, (B) a compound which generates acid by irradiation with activated light ray or radial ray and which is expressed by a general formula (I) or (II), (C) a cross-linking agent and (D) a solvent, and performing development using a developer containing an organic solvent. In the general formula (I), R 1 to R 5 repectively represent a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group or the like, independently. R 6 and R 7 repectively represent a hydrogen atom, an alkyl group, a cycloalkyl group, a halogen atom, or the like, independently. R x and R y respectively represent an alkyl group, a cycloalkyl group, a 2-oxoalkyl group, a 2-oxocycloalkyl group, or the like, independently. Z - represents non-nucleopetal anion. In the general formula (II), R 13 represents a hydrogen atom, a fluorine atom, a hydroxyl group, an alkyl group, a cycloalkyl group, an alkoxy group, or the like. R 14 represents independently when existing in multiple, a hydroxyl group, an alkyl group, a cycloalkyl group, an alkoxy group, or the like. R 15 represents an alkyl group, a cycloalkyl group or a naphthyl group, independently. l represents an integer 0 to 2. r represents an integer 0 to 8. Z - represents a non-nucleopetal anion. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种在曝光宽容度和灵敏度方面优异的图案形成方法，其可以形成也优于线宽变化的图案，并提供使用该方法的化学放大抗蚀剂组合物。 解决方案：用于形成图案的方法包括将含有（A）树脂的化学放大抗蚀剂组合物的膜曝光，（B）通过用激活的光线或径向辐射照射产生酸的化合物，并且其表达 通过通式（I）或（II），（C）交联剂和（D）溶剂，并使用含有有机溶剂的显影剂进行显影。 在通式（I）中，R SB 1至R SB 5分别独立地表示氢原子，烷基，环烷基，芳基等。 R SB 6和R SB 7分别独立地表示氢原子，烷基，环烷基，卤素原子等。 R SB和R SB分别表示烷基，环烷基，2-氧代烷基，2-氧代环烷基等。 Z - 表示非核子阴离子。 在通式（II）中，R SB 13表示氢原子，氟原子，羟基，烷基，环烷基，烷氧基等。 当存在多个，羟基，烷基，环烷基，烷氧基等时，R“SB”独立地表示。 R SB 15独立地表示烷基，环烷基或萘基。 l表示0〜2的整数。r表示0〜8的整数。Z表示非核子阴离子。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2011141494A

公开(公告)日：2011-07-21

申请号：JP2010003386

申请日：2010-01-08

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： ENOMOTO YUICHIRO ,  TARUYA SHINJI ,  KAMIMURA SATOSHI ,  IWATO KAORU ,  KATO KEITA ,  SHIBUYA AKINORI

IPC: G03F7/004 ,  C08F20/34 ,  G03F7/038 ,  G03F7/039 ,  G03F7/32 ,  G03F7/38 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method and a chemically amplified negative resist composition exhibiting a large depth of focus (DOF) and small line-width roughness (LWR) and being capable of forming a pattern having a superior pattern shape and reduced bridge defects. SOLUTION: The pattern forming method includes (α) a step of forming a film from a chemically amplified resist composition; (β) a step of exposing the film; and (γ) a step of developing with a developer containing an organic solvent, wherein the resist composition comprises (A) a resin which exhibits a decreased solubility in a developer containing an organic solvent by the action of an acid, (B) a compound which generates an acid upon irradiation with actinic rays or radiation, (D) a solvent, and (G) a compound which has basicity or exhibits increased basicity due to the action of an acid, the compound having at least one of a fluorine atom or an oxygen atom. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：为了提供显示出大的焦深（DOF）和小的线宽粗糙度（LWR）的图案形成方法和化学放大的负性抗蚀剂组合物，并且能够形成具有优异图案的图案 形状和桥梁缺陷减少。 解决方案：图案形成方法包括（α）从化学放大抗蚀剂组合物形成膜的步骤; （β）暴露薄膜的步骤; 和（γ）用包含有机溶剂的显影剂显影的步骤，其中抗蚀剂组合物包含（A）通过酸作用显示含有有机溶剂的显影剂的溶解性降低的树脂，（B）化合物 其在用光化射线或辐射照射时产生酸，（D）溶剂，和（G）由于酸的作用而具有碱性或显示增加的碱性的化合物，所述化合物具有氟原子或氟原子中的至少一个或 氧原子。 版权所有（C）2011，JPO＆INPIT