OPTOELEKTRONISCHES HALBLEITERBAUELEMENT

    公开(公告)号:EP2005542B1

    公开(公告)日:2013-12-18

    申请号:EP07722046.5

    申请日:2007-03-15

    Abstract: An optoelectronic semiconductor component has a semiconductor body (1) comprising a surface emitting vertical emitter region (2) comprising a vertical emitter layer (3), at least one pump source (4) provided for optically pumping the vertical emitter layer (3), and a radiation passage area (26) through which electromagnetic radiation (31) generated in the vertical emitter layer leaves the semiconductor body (1), wherein the pump source (4) and the vertical emitter layer (3) are at a distance from one another in a vertical direction.

    Abstract translation: 一种光电子半导体器件具有半导体本体(1),该半导体本体(1)包括:包括垂直发射极层(3)的表面发射垂直发射极区(2);用于光学泵浦垂直发射极层(3)的至少一个泵浦源(4) 以及在垂直发射极层中产生的电磁辐射(31)通过其离开半导体本体(1)的辐射通道区域(26),其中泵浦源(4)和垂直发射极层(3)距离 另一个在垂直方向。

    FLÄCHENLICHTLEITER UND FLÄCHENSTRAHLER
    114.
    发明公开
    FLÄCHENLICHTLEITER UND FLÄCHENSTRAHLER 审中-公开
    AREA光纤和区域聚光灯

    公开(公告)号:EP2561387A1

    公开(公告)日:2013-02-27

    申请号:EP11710188.1

    申请日:2011-03-23

    Abstract: The invention relates to a surface light guide (1) which has a radiation exit area (10) extending along a main extension plane of the surface light guide (1) and is provided for laterally coupling radiation, wherein - the surface light guide (1) comprises scattering locations (4) for scattering the coupled radiation; - the surface light guide (1) comprises a first boundary surface (15) and a second boundary surface (16) which delimit the light conductance of the coupled-in radiation in the vertical direction; - and a first layer (11) and a second layer (12) are formed on each other in the vertical direction between the first boundary surface (31) and the second boundary surface (32). Further disclosed are a planar emitter (100) comprising at least one surface light guide (1).

    LIGHT-EMITTING DIODE AND METHOD FOR PRODUCING A LIGHT-EMITTING DIODE
    115.
    发明公开
    LIGHT-EMITTING DIODE AND METHOD FOR PRODUCING A LIGHT-EMITTING DIODE 审中-公开
    发光二极管及其制造方法发光二极管

    公开(公告)号:EP2481044A1

    公开(公告)日:2012-08-01

    申请号:EP09849907.2

    申请日:2009-09-25

    Abstract: A light-emitting diode includes at least one light-emitting diode chip, at least one control device, wherein each of the light-emitting diode chips is electrically connected to one of the at least one control devices, each of the at least one control devices including a data storage device in which brightness data for each light-emitting diode chip which is connected to the control device is stored, and the control device drives the connected light-emitting diode chip with a current which is selected according to stored brightness data for the light emitting-diode chip.

    VERGOSSENES OPTOELEKTRONISCHES MODUL MIT MEHREREN HALBLEITERBAUELEMENTEN UND VERFAHREN ZUM HERSTELLEN EINES OPTOELEKTRONISCHEN MODULS
    116.
    发明公开
    VERGOSSENES OPTOELEKTRONISCHES MODUL MIT MEHREREN HALBLEITERBAUELEMENTEN UND VERFAHREN ZUM HERSTELLEN EINES OPTOELEKTRONISCHEN MODULS 审中-公开
    与用于制造光电模块的多个半导体组件和方法成型的亚光电子模块

    公开(公告)号:EP2474031A1

    公开(公告)日:2012-07-11

    申请号:EP10772990.7

    申请日:2010-08-25

    Abstract: The invention relates to an optoelectronic semiconductor component comprising a main body (100) having a recess (102). Said component comprises a first optoelectronic element (104) and a second optoelectronic element (106) and a surface structured element (110). The first optoelectronic element (104) and the second optoelectronic element (106) are embedded in the recess by means of a filling compound. The element (110) having a structured surface configures a surface of the filling compound such that at least two domed regions (114, 116, 118) of the surface are formed. The invention further relates to a method for producing an optoelectronic semiconductor component.

    HALBLEITERLASER MIT EINEM OPTISCH NICHTLINEAREN KRISTALL
    117.
    发明授权
    HALBLEITERLASER MIT EINEM OPTISCH NICHTLINEAREN KRISTALL 有权
    用光学非线性晶体半导体激光器

    公开(公告)号:EP2308142B1

    公开(公告)日:2012-04-25

    申请号:EP09775899.9

    申请日:2009-06-17

    Abstract: In at least one embodiment of the semiconductor laser (1), said laser comprises a semiconductor laser element (2) which during operation emits electromagnetic radiation having a fundamental wavelength, an end mirror (3), a polarization-dependent reflecting deflection mirror (4) which is disposed between the semiconductor laser element (2) and the end mirror (3), and at least one optically non-linear crystal (5), which is designed for a type II frequency conversion of the fundamental wavelength and meets a half-wave condition for the fundamental wavelength. Such a semiconductor laser (1) has a narrow-band emission of the fundamental wavelength and enables high efficiency during the frequency conversion.

    OPTOELEKTRONISCHES HALBLEITERBAUTEIL UND ANZEIGEEINRICHTUNG
    119.
    发明公开
    OPTOELEKTRONISCHES HALBLEITERBAUTEIL UND ANZEIGEEINRICHTUNG 审中-公开
    光电半导体器件及显示装置

    公开(公告)号:EP2412022A1

    公开(公告)日:2012-02-01

    申请号:EP10706229.1

    申请日:2010-03-01

    CPC classification number: H01L25/0753 H01L33/58 H01L2924/0002 H01L2924/00

    Abstract: The invention relates to an optoelectronic semiconductor component (1) which in at least one embodiment comprises at least two optoelectronic semiconductor chips (2) which are equipped to emit during operation electromagnetic radiation in wave ranges different from each other. The semiconductor chips (2) are attached on a mounting surface (40) of a common carrier (4). Furthermore, the optoelectronic semiconductor component (1) includes at least two lens bodies (3) which are designed non-rotationally symmetrical and equipped to shape the radiation in radiation angles (α) different from each other along two directions (H, V) orthogonal to each other and in parallel to the mounting surface (40). One lens body (3) each is arranged downstream of or associated with each of the semiconductor chips (2) in a direction of radiation (z).

    OPTOELEKTRONISCHES HALBLEITERBAUELEMENT

    公开(公告)号:EP2308105A1

    公开(公告)日:2011-04-13

    申请号:EP09775971.6

    申请日:2009-07-15

    Abstract: The invention relates to an optoelectronic semiconductor component, having – a connection carrier (2), - an optoelectronic semiconductor chip (1) disposed on a mounting surface (22) of the connection carrier (2), and – a body transparent to radiation (3) enclosing the semiconductor chip (1), wherein – the body transparent to radiation (3) comprises a silicone, - the body transparent to radiation (3) comprises at least one side surface (31) running at least in places at an angle (β)

    Abstract translation: 本发明涉及一种光电子半导体器件,其具有 - 连接载体(2), - 设置在连接载体(2)的安装表面(22)上的光电子半导体芯片(1),以及 - 对辐射 3)包围半导体芯片(1),其中 - 对辐射透明的主体(3)包括硅树脂, - 对辐射透明的主体(3)包括至少一个侧面(31) (β)<90°,并且 - 侧表面(3)通过分割工艺产生。

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