Abstract:
An optoelectronic semiconductor component has a semiconductor body (1) comprising a surface emitting vertical emitter region (2) comprising a vertical emitter layer (3), at least one pump source (4) provided for optically pumping the vertical emitter layer (3), and a radiation passage area (26) through which electromagnetic radiation (31) generated in the vertical emitter layer leaves the semiconductor body (1), wherein the pump source (4) and the vertical emitter layer (3) are at a distance from one another in a vertical direction.
Abstract:
The invention relates to a surface light guide (1) which has a radiation exit area (10) extending along a main extension plane of the surface light guide (1) and is provided for laterally coupling radiation, wherein - the surface light guide (1) comprises scattering locations (4) for scattering the coupled radiation; - the surface light guide (1) comprises a first boundary surface (15) and a second boundary surface (16) which delimit the light conductance of the coupled-in radiation in the vertical direction; - and a first layer (11) and a second layer (12) are formed on each other in the vertical direction between the first boundary surface (31) and the second boundary surface (32). Further disclosed are a planar emitter (100) comprising at least one surface light guide (1).
Abstract:
A light-emitting diode includes at least one light-emitting diode chip, at least one control device, wherein each of the light-emitting diode chips is electrically connected to one of the at least one control devices, each of the at least one control devices including a data storage device in which brightness data for each light-emitting diode chip which is connected to the control device is stored, and the control device drives the connected light-emitting diode chip with a current which is selected according to stored brightness data for the light emitting-diode chip.
Abstract:
The invention relates to an optoelectronic semiconductor component comprising a main body (100) having a recess (102). Said component comprises a first optoelectronic element (104) and a second optoelectronic element (106) and a surface structured element (110). The first optoelectronic element (104) and the second optoelectronic element (106) are embedded in the recess by means of a filling compound. The element (110) having a structured surface configures a surface of the filling compound such that at least two domed regions (114, 116, 118) of the surface are formed. The invention further relates to a method for producing an optoelectronic semiconductor component.
Abstract:
In at least one embodiment of the semiconductor laser (1), said laser comprises a semiconductor laser element (2) which during operation emits electromagnetic radiation having a fundamental wavelength, an end mirror (3), a polarization-dependent reflecting deflection mirror (4) which is disposed between the semiconductor laser element (2) and the end mirror (3), and at least one optically non-linear crystal (5), which is designed for a type II frequency conversion of the fundamental wavelength and meets a half-wave condition for the fundamental wavelength. Such a semiconductor laser (1) has a narrow-band emission of the fundamental wavelength and enables high efficiency during the frequency conversion.
Abstract:
An optical component comprises in particular a carrier plate (1) with a first primary surface (2) and a second primary surface (3) facing away from the first primary surface (2), and a first lens structure (4) on the first primary surface (2), wherein the first lens structure (4) has at least one first lens element (41) with one first polygonal shape and one second lens element (42) with a second polygonal shape, the first lens structure (4) completely covers the first primary surface (2) and the first lens element (41) and the second lens element (42) are not coincident to each other and/or the orientations thereof with respect to the first primary surface (2) of the carrier plate (1) are different.
Abstract:
The invention relates to an optoelectronic semiconductor component (1) which in at least one embodiment comprises at least two optoelectronic semiconductor chips (2) which are equipped to emit during operation electromagnetic radiation in wave ranges different from each other. The semiconductor chips (2) are attached on a mounting surface (40) of a common carrier (4). Furthermore, the optoelectronic semiconductor component (1) includes at least two lens bodies (3) which are designed non-rotationally symmetrical and equipped to shape the radiation in radiation angles (α) different from each other along two directions (H, V) orthogonal to each other and in parallel to the mounting surface (40). One lens body (3) each is arranged downstream of or associated with each of the semiconductor chips (2) in a direction of radiation (z).
Abstract:
The invention relates to an optoelectronic semiconductor component, having – a connection carrier (2), - an optoelectronic semiconductor chip (1) disposed on a mounting surface (22) of the connection carrier (2), and – a body transparent to radiation (3) enclosing the semiconductor chip (1), wherein – the body transparent to radiation (3) comprises a silicone, - the body transparent to radiation (3) comprises at least one side surface (31) running at least in places at an angle (β)