公开(公告)号：EP2191520B1

公开(公告)日：2017-04-26

申请号：EP08801300.8

申请日：2008-09-04

Applicant: Osram Opto Semiconductors Gmbh

Inventor： HAHN, Berthold ,  WEIMAR, Andreas ,  BAUR, Johannes ,  SABATHIL, Matthias ,  PLAINE, Glenn-Ives

IPC: H01L33/40 ,  H01L33/38 ,  H01L33/14 ,  H01L33/00

CPC classification number: H01L33/38 ,  H01L33/10 ,  H01L33/145 ,  H01L33/405 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP2193550B1

公开(公告)日：2017-03-08

申请号：EP08801254.7

申请日：2008-08-28

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： ALBRECHT, Tony ,  BADER, Stefan ,  HAHN, Berthold

IPC: H01L33/00

CPC classification number: H01L33/06 ,  H01L33/08 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP1774599B1

公开(公告)日：2015-11-04

申请号：EP05770659.0

申请日：2005-07-20

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： HAHN, Berthold ,  HÄRLE, Volker ,  KAISER, Stephan ,  PLÖSSL, Andreas

IPC: H01L21/78 ,  H01L23/00 ,  H01L23/31 ,  H01L21/683 ,  H01L33/00 ,  H01L33/40 ,  H01L33/62

CPC classification number: H01L33/405 ,  H01L21/6835 ,  H01L21/78 ,  H01L23/3185 ,  H01L24/03 ,  H01L24/05 ,  H01L24/83 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/62 ,  H01L2221/6835 ,  H01L2221/68354 ,  H01L2221/68368 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/32014 ,  H01L2224/83801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01025 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/00014 ,  H01L2924/3512 ,  H01L2924/00

公开(公告)号：EP2659523A1

公开(公告)日：2013-11-06

申请号：EP11805000.4

申请日：2011-12-16

Applicant: Osram Opto Semiconductors Gmbh

Inventor： BAUR, Johannes ,  HAHN, Berthold ,  HÄRLE, Volker (Verstorbenen) ,  ENGL, Karl ,  HERTKORN, Joachim ,  TAKI, Tetsuya

IPC: H01L33/00 ,  H01L33/08 ,  C09K11/00

CPC classification number: H01L33/32 ,  H01L21/02612 ,  H01L21/78 ,  H01L24/73 ,  H01L29/02 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/46 ,  H01L33/507 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: The invention relates to a composite substrate (1) having a carrier (2) and a useful layer (5), wherein the useful layer is fastened to the carrier (2) by means of a dielectric connecting layer (3) and the carrier (2) contains a radiation conversion material. The invention furthermore relates to a semiconductor chip (10) having such a composite substrate, a method for producing a composite substrate and also a method for producing a semiconductor chip having a composite substrate are specified.

Abstract translation: 一种复合衬底具有载体和公用层。 该实用程序层由电介质接合层的方式附接到所述载体和所述载体包含一个辐射转换材料。 其它实施例涉及经审查的复合基材，用于制造复合衬底的方法和用于制造具有一个复合衬底的半导体芯片的方法的半导体芯片。

公开(公告)号：EP2332186A1

公开(公告)日：2011-06-15

申请号：EP09744315.4

申请日：2009-08-26

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： BOGNER, Georg ,  HAHN, Berthold ,  HERRMANN, Siegfried

IPC: H01L33/48 ,  H01L33/62

CPC classification number: H01L33/486 ,  H01L25/0753 ,  H01L25/0756 ,  H01L33/62 ,  H01L2924/0002 ,  H05K3/3442 ,  H01L2924/00

Abstract: At least one layer stack (1) of a substrate-less LED is arranged on a top of a substrate (4).  Contact surfaces are located on a side surface (14) of the substrate (4) which adjoins the top. Connections of the LED are connected to the contact surface by connecting lines (10, 20). The contact surfaces can in particular by formed by conductor layers (6) in solder fillets (5) on vertical edges of the substrate (4). For production, through-platings can be formed in a wafer provided with LEDs at the top, which after separating the wafer form metalized solder fillets on lateral edges of the substrate (4).

公开(公告)号：EP1307927B1

公开(公告)日：2010-09-22

申请号：EP01964845.0

申请日：2001-07-24

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： BAUR, Johannes ,  EISERT, Dominik ,  FEHRER, Michael ,  HAHN, Berthold ,  HÄRLE, Volker ,  JACOB, Ulrich ,  PLASS, Werner ,  STRAUSS, UWE ,  VÖLKL, Johannes ,  ZEHNDER, Ulrich

IPC: H01L33/20

CPC classification number: H01L33/20 ,  H01L33/24 ,  H01L2224/48091 ,  H01L2924/00014

公开(公告)号：EP2191520A1

公开(公告)日：2010-06-02

申请号：EP08801300.8

申请日：2008-09-04

Applicant: Osram Opto Semiconductors Gmbh

Inventor： HAHN, Berthold ,  WEIMAR, Andreas ,  BAUR, Johannes ,  SABATHIL, Matthias ,  PLAINE, Glenn-Ives

IPC: H01L33/00

CPC classification number: H01L33/38 ,  H01L33/10 ,  H01L33/145 ,  H01L33/405 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention relates to a thin-film LED, which comprises a barrier layer (3), a first mirror layer (2) following the barrier layer (3), a layer stack (5) following the first mirror layer (2), and at least one contact structure (6) following the layer stack (5). The layer stack (5) comprises at least one active layer (5a), which emits the electromagnetic radiation. The contact structure (6) is disposed on a radiation emergence surface (4) and comprises a contact surface (7). The first mirror layer (2) has a recess in a region opposite the contact surface of the contact structure (6), said recess being larger than the contact surface (7) of the contact structure (6). As a result, the efficiency of the thin-film LED increases.

Abstract translation: 一种薄膜LED，其包括阻挡层（3），第一反射镜层（2）后续的阻挡层（3），层堆（5）后面的第一反光镜层（2），以及至少一个接触结构（ 6）随后的层堆（5）。 层堆叠（5）具有至少一个有源层（5a）中，其发射电磁辐射。 接触结构（6）被布置在辐射出射面（4）和具有接触区域（7）。 所述第一反光镜层（2）具有在位于所述接触结构的接触区域相对的区域（6），切口的所有比的接触面积较大的（7）的接触结构（6）。 薄膜LED的效率增加作为结果。

公开(公告)号：EP2047525A2

公开(公告)日：2009-04-15

申请号：EP07785643.3

申请日：2007-07-16

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： HERRMANN, Siegfried ,  HAHN, Berthold

IPC: H01L33/00 ,  H01L27/15

CPC classification number: H01L33/0079 ,  H01L27/15 ,  H01L33/385 ,  H01L33/54 ,  H01L33/62 ,  H01L33/642 ,  H01L33/647 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: The invention describes a thin-film semiconductor component having a carrier layer and a layer stack which is arranged on the carrier layer, includes a semiconductor material and is intended to emit radiation, wherein a heat-dissipating layer which is intended to cool the semiconductor component is applied to the carrier layer. The invention also describes a component assembly.

公开(公告)号：EP1964183A1

公开(公告)日：2008-09-03

申请号：EP06828550.1

申请日：2006-11-21

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： HAHN, Berthold ,  WIRTH, Ralph ,  ALBRECHT, Tony ,  AHLSTEDT, Magnus ,  ILLEK, Stefan ,  STREUBEL, Klaus

IPC: H01L33/00

CPC classification number: H01L33/145 ,  H01L33/42

Abstract: A luminescence diode chip having at least one current barrier is specified. The current barrier is suitable for selectively preventing or reducing the generation of irradiation in a region laterally covered by the electrical connection body, by means of a reduced current density. The current spreading layer contains at least one TCO (Transparent Conductive Oxide). In a particularly preferred embodiment, at least one current barrier is contained which has material of the epitaxial semiconductor layer sequence, material of the current spreading layer and/or an interface between the semiconductor layer sequence and the current spreading layer. A method for producing a luminescence diode chip is furthermore specified.

Abstract translation: 发光二极管芯片具有适于产生电磁辐射的半导体层序列，以及由外延半导体层序列的半导体材料和电流扩展层的材料形成的至少一个电流势垒和/或由 半导体层序列和电流扩展层。 包括用于制造发光二极管芯片的方法的独立权利要求。

公开(公告)号：EP1911104A1

公开(公告)日：2008-04-16

申请号：EP06775806.0

申请日：2006-08-04

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： HERRMANN, Siegfried ,  HAHN, Berthold

IPC: H01L33/00

CPC classification number: H01L21/6835 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L33/0079 ,  H01L33/54 ,  H01L33/62 ,  H01L2221/68363 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/12036 ,  H01L2924/181 ,  H01L2933/0033 ,  Y02P20/582 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012

Abstract: The invention relates to a method for producing semiconductor components, wherein a layer composite (6) containing a semiconductor material is formed on a growth substrate (1), a flexible carrier layer is applied to the layer composite (6), the flexible carrier layer is cured to form a self-supporting carrier layer (2), and the growth substrate (1) is stripped away. As an alternative, the carrier layer (2) may have a base layer (2b) and an adhesion layer (2a) adhering on the layer composite.