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    OPTOELEKTRONISCHES HALBLEITERBAUELEMENT
    115.
    发明公开
    OPTOELEKTRONISCHES HALBLEITERBAUELEMENT 审中-公开

    公开(公告)号：EP2380215A1

    公开(公告)日：2011-10-26

    申请号：EP10704104.8

    申请日：2010-01-05

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： BEHRES, Alexander ,  SABATHIL, Matthias

    IPC: H01L33/00 ,  H01L33/30 ,  H01L33/32 ,  H01S5/323

    CPC classification number: H01L33/0062 ,  H01L33/0075 ,  H01L33/30 ,  H01L33/32 ,  H01L2924/0002 ,  H01S5/32341 ,  H01L2924/00

    Abstract: An optoelectronic semiconductor component is disclosed, comprising an active layer (4) suitable for the emission of radiation, enclosed by cover layers (3a, 3b), wherein the cover layers (3a, 3b) and/or the active layer (4) comprises an indium-containing phosphide compound semiconductor material and the phosphide compound semiconductor material contains at least one of the elements Sb or Bi as additional element of the V. main group. Furthermore, an optoelectronic semiconductor component with an active layer (4) suitable for emission of radiation is disclosed, wherein the active layer comprises an indium-containing nitride compound semiconductor material and the nitride compound semiconductor material of the active layer (4) contains at least one of the elements As, Sb or Bi as additional element of the V. main group.

    Abstract translation: 公开了一种光电子半导体元件，其包括由覆盖层（3a，3b）封闭的适于发射辐射的活性层（4），其中覆盖层（3a，3b）和/或活性层（4）包括 含铟磷化合物半导体材料和磷化合物半导体材料包含元素Sb或Bi中的至少一种作为V.主要基团的附加元素。 此外，公开了一种具有适合于辐射发射的有源层（4）的光电子半导体部件，其中有源层包括含铟氮化物半导体材料，并且有源层（4）的氮化物半导体材料至少包含 元素As，Sb或Bi中的一种作为V.主要组的附加元素。

    OPTOELEKTRONISCHER HALBLEITERCHIP
    116.
    发明公开
    OPTOELEKTRONISCHER HALBLEITERCHIP 审中-公开

    公开(公告)号：EP2313935A1

    公开(公告)日：2011-04-27

    申请号：EP09775928.6

    申请日：2009-06-29

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： HÖPPEL, Lutz ,  SABATHIL, Matthias

    IPC: H01L33/38 ,  H01L33/42

    CPC classification number: H01L33/387 ,  H01L33/405 ,  H01L33/42 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The invention describes an optoelectronic semiconductor chip (1) having a semiconductor layer sequence (2) which has an active zone (4) for generating electromagnetic radiation, and having a patterned current spreading layer (6) which contains a transparent conductive oxide and is arranged on a main surface (12) of the semiconductor layer sequence (2), wherein the current spreading layer (6) covers at least 30% and at most 60% of the main surface (12).

    Abstract translation: 本发明描述了一种具有半导体层序列（2）的光电子半导体芯片（1），该半导体层序列具有用于产生电磁辐射的有源区（4），并且具有包含透明导电氧化物的图案化电流扩展层（6） 在所述半导体层序列（2）的主表面（12）上，其中所述电流扩展层（6）覆盖所述主表面（12）的至少30％并且至多60％。

    LEUCHTDIODENCHIP
    117.
    发明公开
    LEUCHTDIODENCHIP 有权

    公开(公告)号：EP2272105A1

    公开(公告)日：2011-01-12

    申请号：EP09737749.3

    申请日：2009-04-28

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： SABATHIL, Matthias ,  HÖPPEL, Lutz ,  WEIMAR, Andreas ,  ENGL, Karl ,  BAUR, Johannes

    IPC: H01L33/00

    CPC classification number: H01L33/387 ,  H01L33/42 ,  H01L33/46 ,  H01L33/641 ,  H01L33/642 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The invention relates to an LED chip (1) comprising a semiconductor layer sequence (2) which is electrically contacted by contacts (5) via a current spreading layer (3). The contacts (5) cover approximately 1% to 8% of the area of the semiconductor layer sequence (2). The contacts (5) e.g. consist of separate contact points (51) which are arranged on the grid points of a regular grid (52) having a grid constant of 12 μm. The current spreading layer (3) contains e.g. indium tin oxide, indium zinc oxide or zinc oxide and has a thickness in the range of 15 nm to 60 nm.

    Abstract translation: 本发明涉及包括半导体层序列（2）的LED芯片（1），所述半导体层序列通过电流扩展层（3）与触点（5）电接触。 触点（5）覆盖半导体层序列（2）的面积的约1％至8％。 触点（5）例如 由分开的接触点（51）组成，所述接触点布置在网格常数为12μm的规则网格（52）的网格点上。 电流扩展层（3）包含例如 铟锡氧化物，铟锌氧化物或氧化锌，并具有15nm至60nm范围内的厚度。

    OPTOELEKTRONISCHER HALBLEITERCHIP UND VERFAHREN ZUR HERSTELLUNG EINES SOLCHEN
    118.
    发明公开
    OPTOELEKTRONISCHER HALBLEITERCHIP UND VERFAHREN ZUR HERSTELLUNG EINES SOLCHEN 有权
    光电子半导体芯片和方法生产同样

    公开(公告)号：EP2260516A1

    公开(公告)日：2010-12-15

    申请号：EP09727845.1

    申请日：2009-03-13

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： ENGL, Karl ,  HÖPPEL, Lutz ,  RODE, Patrick ,  SABATHIL, Matthias

    IPC: H01L33/00 ,  H01L29/45 ,  H01L21/225

    CPC classification number: H01L33/382 ,  H01L33/10 ,  H01L33/40 ,  H01L33/46 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The invention relates to an opto-electronic semiconductor chip. The semiconductor chip has a semiconductor layer sequence (2) with an active layer (23) provided between a layer of a first conductivity type (21) and a layer of a second conductivity type (22) for generating radiation. The layer of the first conductivity type (21) is adjacent to a front side (110) of the semiconductor layer sequence (2). The semiconductor layer sequence (2) comprises at least one recess (3) that extends from a rear side (120) located across a front side (110) of the semiconductor layer sequence (2) through the active layer (23) to the layer of the first conductivity type (21). The layer of the first conductivity type (21) is electrically connected through the recess (3) by means of a first electrical connection layer (5) which covers at least some sections of the rear side (120) of the semiconductor layer sequence (2). The semiconductor chip contains in the region of the recess (3) a transition layer (20) which is composed of material of the layer of the first conductivity type (21) and material of the first electrical connection layer (5). The invention further relates to a method for producing such a semiconductor chip.

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