公开(公告)号：EP2465139A1

公开(公告)日：2012-06-20

申请号：EP10740230.7

申请日：2010-08-05

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： VON MALM, Norwin ,  WIRTH, Ralph

IPC: H01L27/15 ,  H01L33/50 ,  H01L33/08

CPC classification number: H01L27/153 ,  H01L33/08 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L33/50 ,  H01L33/62 ,  H01L2224/49107 ,  H01L2924/3011 ,  H01L2924/00

Abstract: A radiation-emitting semiconductor component is provided, comprising: a light-emitting diode chip (1) having at least two emission regions (2a, 2b) that can be operated independently of each other, at least two differently designed conversion elements (31, 32), wherein during operation of the light-emitting diode chips (1) each of the emission regions (2a, 2b) is provided for generating electromagnetic primary radiation, each emission region (2a, 2b) has an emission surface (21, 22) by which at least part of the primary radiation is decoupled from the light-emitting diode chip (1), the conversion elements (31, 32) are provided for absorbing at least part of the primary radiation and for re-emitting secondary radiation, the differently designed conversion elements (31, 32) are disposed downstream of different emission surfaces, and an electric resistance element (4), which is connected in series or parallel to at least one of the emission regions (2a, 2b).

公开(公告)号：EP2368269A1

公开(公告)日：2011-09-28

申请号：EP09801388.1

申请日：2009-11-27

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： VON MALM, Norwin ,  STREUBEL, Klaus ,  RODE, Patrick ,  ENGL, Karl ,  HÖPPEL, Lutz ,  MOOSBURGER, Jürgen

IPC: H01L27/15 ,  H01L33/38 ,  H01L33/62

CPC classification number: H01L33/62 ,  H01L27/156 ,  H01L33/22 ,  H01L33/382 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention relates to an optoelectronic projection apparatus, which during operation generates a predetermined image (10). The projection apparatus comprises a semi-conductor body (1) which has an active layer (101) suited to generate electromagnetic radiation and a radiation emission side (102). The semi-conductor body (1) is an imaging element of the projection apparatus. For the electrical contacting of the semi-conductor body (1), a first contact layer (2) and a second contact layer (3) are arranged on a back side (103) of the semi-conductor body (1) opposite of the radiation emission side (102) and electrically insulated with respect to each other by way of a separating layer (4).

公开(公告)号：EP3341975B1

公开(公告)日：2020-06-03

申请号：EP16754243.0

申请日：2016-08-10

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： O'BRIEN, David ,  GÖÖTZ, Britta ,  VON MALM, Norwin

IPC: H01L33/00 ,  H01L33/50

公开(公告)号：EP2583305B1

公开(公告)日：2017-08-09

申请号：EP11726078.6

申请日：2011-05-26

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： HÖPPEL, Lutz ,  VON MALM, Norwin

IPC: H01L27/15 ,  H01L33/00 ,  H01L33/40 ,  H01L33/38 ,  H01L31/0224 ,  H01L31/18 ,  H01L33/62 ,  H01L33/44

CPC classification number: H01L33/46 ,  H01L27/0248 ,  H01L29/861 ,  H01L31/0224 ,  H01L31/02327 ,  H01L31/186 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/382 ,  H01L33/40 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0025 ,  Y02P70/521 ,  H01L2924/00

公开(公告)号：EP2612375B1

公开(公告)日：2014-10-01

申请号：EP11752171.6

申请日：2011-08-24

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： RODE, Patrick ,  VON MALM, Norwin ,  HÖPPEL, Lutz

IPC: F21V23/02 ,  F21Y101/02 ,  H01L41/107 ,  F21V7/00

CPC classification number: F21K9/50 ,  F21K9/60 ,  F21V7/00 ,  F21V23/02 ,  F21V23/023 ,  F21Y2115/10 ,  H01L41/107

公开(公告)号：EP2193561B1

公开(公告)日：2014-06-04

申请号：EP08801126.7

申请日：2008-08-06

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： SCHINDLER, Florian ,  KRUMMACHER, Benjamin Claus ,  VON MALM, Norwin ,  BERBEN, Dirk ,  JERMANN, Frank ,  ZACHAU, Martin

IPC: H01L51/52

CPC classification number: H01L51/5265 ,  H01L27/322

公开(公告)号：EP2702833A1

公开(公告)日：2014-03-05

申请号：EP12714275.0

申请日：2012-03-29

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： VON MALM, Norwin ,  RAUKAS, Madis ,  KUNDALIYA, Darshan

IPC: H05B33/10 ,  H01L33/00

CPC classification number: H05B33/10 ,  H01L27/156 ,  H01L2933/0041

Abstract: A light-emitting semiconductor chip is provided, the semiconductor chip comprising a semiconductor body having a pixel region with at least two electrically isolated sub-regions, each sub-region comprising an active layer, which generates electromagnetic radiation of a first wavelength range during operation, a separately manufactured ceramic conversion die over a radiation emission area of at least one sub-region, said conversion die being configured to convert radiation of the first wavelength range into electromagnetic radiation of a second wavelength range, wherein a width of the conversion die does not exceed 100 mum. Further, a method for the production of a light-emitting semiconductor chip and method for the production of a conversion die are provided.

公开(公告)号：EP2583305A1

公开(公告)日：2013-04-24

申请号：EP11726078.6

申请日：2011-05-26

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： HÖPPEL, Lutz ,  VON MALM, Norwin

IPC: H01L27/15 ,  H01L33/00 ,  H01L33/44 ,  H01L33/40 ,  H01L33/38 ,  H01L31/0224 ,  H01L31/18

CPC classification number: H01L33/46 ,  H01L27/0248 ,  H01L29/861 ,  H01L31/0224 ,  H01L31/02327 ,  H01L31/186 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/382 ,  H01L33/40 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0025 ,  Y02P70/521 ,  H01L2924/00

Abstract: The invention relates to a method for producing an organic opto-electronic semiconductor chip, comprising the following steps: - providing an n-conducting layer (2), - arranging a p-conducting layer (4) on the n-conducting layer (2), - arranging a metal layer sequence (5) on the p-conducting layer (4), - arranging a mask (6) on the side of the metal layer sequence (5) which faces away from the p-conducting layer (4), - spot-ablating the metal layer sequence (5) and exposing the p-conducting layer (4) using the mask (6), and - spot-neutralizing or removing the exposed regions (4a) of the p-conducting layer (4) up to the n-conducting layer (2) using the mask (6), wherein - the metal layer sequence (5) comprises at least one mirror layer (51) and a barrier layer (52), and - the mirror layer (52) of the metal layer sequence (5) faces the p-conducting layer (4).

Abstract translation: 一种用于在光电子半导体芯片制造方法的说明，其包括以下步骤：提供一n导通层（2），排列p型导电层（4）的n导通层（2），排列的金属层序列上 （5）p导通层（4），布置掩模上（6）在所述金属层序列的做侧（5）所有的远离p导通层（4），在去除金属层序列的地方 （5）和露出使用掩模（6）（4）p型导电层，和在地方中和或去除p导电层（4）只要n导通层的未覆盖区域（4A）（ 2）使用掩模（6），worin金属层序列（5）包括至少一个反射镜层（51）和阻挡层（52）和金属层序列的镜层（51）（5）面 p导通层（4）。

公开(公告)号：EP2483923A1

公开(公告)日：2012-08-08

申请号：EP10763590.6

申请日：2010-09-10

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： RODE, Patrick ,  HÖPPEL, Lutz ,  VON MALM, Norwin ,  SABATHIL, Matthias ,  MOOSBURGER, Jürgen

IPC: H01L25/075 ,  H01L33/62 ,  H01L27/15

CPC classification number: H01L27/153 ,  G01R31/318516 ,  H01H85/0417 ,  H01H85/32 ,  H01L23/5256 ,  H01L25/0753 ,  H01L27/156 ,  H01L33/62 ,  H01L51/50 ,  H01L2224/73265 ,  H01L2924/00 ,  H01L2924/0002 ,  H02H3/046 ,  H03K17/74 ,  H03K19/17728 ,  H05B33/083 ,  H05B33/0893 ,  Y10T29/49204

Abstract: The invention relates to an optoelectronic semiconductor chip, comprising a first semiconductor functional area (21) having a first terminal (211) and a second terminal (212), and a contact structure (4) for electrically contacting the optoelectronic semiconductor chip, the contact structure being connected to the first semiconductor functional area (21) in an electrically conductive manner. The contact structure (4) has a conductor structure (41, 71, 42) that can be disconnected, wherein - when the conductor structure is not disconnected, an operating current path is established across the first terminal of the first semiconductor functional area and the second terminal, the operating current path being interrupted when the conductor structure is disconnected, or - when the conductor structure (41, 71, 42) is disconnected, an operating current path is established across the first terminal (211) of the first semiconductor functional area (21) and the second terminal (212), wherein when the conductor structure (41, 71, 42) is not disconnected, the conductor structure (41, 71, 42) connects the first terminal (211) to the second terminal (212) and short circuits the first semiconductor functional area (21).

公开(公告)号：EP1955376A1

公开(公告)日：2008-08-13

申请号：EP06742991.0

申请日：2006-05-19

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： BERBEN, Dirk ,  HOMER, Antoniadis ,  JERMANN, Frank ,  KRUMMACHER, Benjamin ,  VON MALM, Norwin ,  ZACHAU, Martin

IPC: H01L27/32 ,  H01L51/50

CPC classification number: H05B33/22 ,  B82Y20/00 ,  B82Y30/00 ,  H01L27/322 ,  H01L33/508 ,  H01L51/5036 ,  H01L51/5262 ,  H01L2251/5369 ,  H05B33/14 ,  H05B33/28

Abstract: An apparatus device such as a light source is disclosed which has an OLED device and a structured luminescence conversion layer deposited on the substrate or transparent electrode of said OLED device and on the exterior of said OLED device. The structured luminescence conversion layer contains regions such as color-changing and non-color-changing regions with particular shapes arranged in a particular pattern.