公开(公告)号：JPH03156903A

公开(公告)日：1991-07-04

申请号：JP29511089

申请日：1989-11-15

Applicant: SONY CORP

Inventor： SUZUKI HIROYUKI ,  KAGAMI KEIICHI ,  HOSOYA TAKESHI ,  KITAMURA TOMOSABURO ,  TAMURA HIDEMASA

IPC: C04B33/06 ,  C04B37/00 ,  G11B5/133 ,  H01F1/34 ,  H01F41/02

Abstract: PURPOSE:To suppress the instability of a boundary between polycrystalline ferrite and single crystal ferrite by a method wherein one or more elements selected among Ca, Zr, Ta, K, Cs and Rb and added to the polycrystalline ferrite and the mixture is baked and then the single crystal ferrite is bonded to the baked polycrystalline ferrite by thermocompression bonding. CONSTITUTION:One or more elements selected among Ca, Zr, Ta, K, Cs and Rb are added to polycrystalline ferrite and the mixture is baked. The respective elements may be added to the polycrystalline ferrite, for example, by a method wherein oxides, carbonates, hydroxides, organometal compounds, etc., of the respective elements are added to the powder of polycrystalline ferrite and the mixture powder is press-molded and sintered in a process afterwards. Then, single crystal ferrite is bonded to the molded and sintered polycrystalline ferrite by thermocompression bonding. With this constitution, a joined ferrite which has little instability of the boundary, single-crystallization of the polycrystalline ferrite and grain growth created at the time of thermocompression bonding can be obtained.

公开(公告)号：JPH0339015B2

公开(公告)日：1991-06-12

申请号：JP15124082

申请日：1982-08-31

Applicant: SONY CORP

Inventor： KAMIHIRA AKIRA ,  YAMANOI HIROSHI ,  TAMURA HIDEMASA

IPC: C01G23/00

公开(公告)号：JPH0339014B2

公开(公告)日：1991-06-12

申请号：JP14722682

申请日：1982-08-25

Applicant: SONY CORP

Inventor： KAMIHIRA AKIRA ,  YAMANOI HIROSHI ,  TAMURA HIDEMASA

IPC: C01G23/00 ,  C01G23/02

公开(公告)号：JPS6423443A

公开(公告)日：1989-01-26

申请号：JP17867787

申请日：1987-07-17

Applicant: SONY CORP

Inventor： OCHIAI YOSHITAKA ,  TAMURA HIDEMASA ,  ASO KOICHI

IPC: G11B11/10 ,  G11B11/105

Abstract: PURPOSE:To improve the stability of the squareness ratio of a Kerr loop by laminating a rare earth element and transition metal element into superlattice structure and incorporating Cr into a transition metal layer, thereby forming a magnetic film. CONSTITUTION:While a substrate 1 is kept rotated, a Tb-Fe88Co4Cr8 film 8 is formed thereon by simultaneous binary sputtering using a magnetron type sputtering device and using two targets consisting of Tb and Fe88Co4Cr8. High- frequency electric power is supplied to the Tb target and DC power to the Fe88Co4Cr8 alloy target. The perpendicularly magnetized film 2 obtd. at this time does not have the superlattice structure and is the amorphous film which is homogeneous over the entire part. The magnetic layer constituted by incorporating Cr into the transition metal layer has the extremely stable squareness ratio of the Kerr loop even if the medium is placed under high-temp. and high- humidity conditions or rested in the air.

公开(公告)号：JPS6353736A

公开(公告)日：1988-03-08

申请号：JP19766886

申请日：1986-08-23

Applicant: SONY CORP

Inventor： HASHIMOTO SHUNICHI ,  OCHIAI YOSHITAKA ,  KANEKO MASAHIKO ,  ASO KOICHI ,  TAMURA HIDEMASA ,  WATANABE KENJIRO

IPC: G11B11/10 ,  G11B11/105

Abstract: PURPOSE:To improve corrosion resistance by forming a protective layer consisting of a rare earth element and transition metal element having the same compsn. as the compsn. of a recording layer and having the Kerr rotating angle larger than the Kerr rotating angle of the recording layer on the recording layer. CONSTITUTION:This recording medium is constituted of a transparent substrate 1, the recording layer 2 with which writing and reading out of information are executed by laser light, and the protective layer 3 which has high corrosion resistance and protects the recording layer 2. The recording layer 2 is a magnetic amorphous film consisting of the rare earth element and transition metal element and has perpendicular magnetic anisotropy. Said film is formed by sputtering in an Ar atmosphere. The gaseous Ar pressure at the time of the sputtering is set within a 10 -10 Torr range. On the other hand, the protective layer 3 is also a magnetic film consisting of the rare earth element and transition metal element having the same compsn. as the compsn. of the recording layer 2 and has the Kerr rotating angle greater than the Kerr rotating angle of the recording layer 2. The corrosion resistance is thereby improved without deteriorating the magneto-optical characteristics.

公开(公告)号：JPS6130678A

公开(公告)日：1986-02-12

申请号：JP15043084

申请日：1984-07-19

Applicant: Sony Corp

Inventor： KAMIHIRA AKIRA ,  YAMANOI HIROSHI ,  TAMURA HIDEMASA

IPC: C04B35/46 ,  B32B15/04 ,  C01G23/00 ,  C23C22/00 ,  C23C22/60 ,  C23C22/64 ,  H01B3/00 ,  H01B3/12 ,  H01G4/10 ,  H01G4/12 ,  H01G9/00

CPC classification number: H01G9/0032 ,  C01G23/006 ,  C23C22/64 ,  H01G4/1227

Abstract: PURPOSE:To provide a dielectric material for a capacitor having a large dielectric constant by subjecting a Ti metal to a chemical conversion treatment in an aq. strong alkaline soln. contg. Ba and Sr and forming a specifically composed Ba-Sr-Ti oxide layer on the surface. CONSTITUTION:An Au layer 2 is formed by a vapor deposition method, etc. on a substrate 1 made of ceramics, glass, etc. and is then etched partially by utilizing a photoresist mask. The Ti metallic layer 3 is formed by a vapor deposition method, etc. thereon and the layer 3 except the layer 2 is etched away. The substrate is dipped in the aq. strong alkaline soln. prepd. by dissolving Ba(OH)2. 8H2O, Sr(OH)2.8H2O and contg. >=0.1mol/l Ba and >=0.1mol/l Sr to convert chemically the whole of the layer 3 to a Ba1-xSrxTiO3 (where 0

Abstract translation: 目的：通过对Ti金属进行化学转化处理，从而提供介电常数大的电容器的介电材料。 强碱性溶胶 对比 Ba 2+和Sr 2+，并在表面上形成特定的Ba-Sr-Ti氧化物层。 构成：在由陶瓷，玻璃等制成的基板1上通过气相沉积法等形成Au层2，然后利用光致抗蚀剂掩模部分蚀刻。 通过其上的气相沉积法等形成Ti金属层3，除去层2之外的层3被蚀刻掉。 将基材浸入水中。 强碱性溶胶 准备 通过溶解Ba（OH）2。 8H2O，Sr（OH）2.8H2O， > = 0.1mol / l Ba 2+和> = 0.1mol / l Sr 2+以将整个层3化学转化为Ba1-xSrxTiO3（其中0

公开(公告)号：JPS60189163A

公开(公告)日：1985-09-26

申请号：JP4140684

申请日：1984-03-06

Applicant: Sony Corp

Inventor： KAMIHIRA AKIRA ,  SAMEJIMA TOSHIKO ,  TAMURA HIDEMASA

IPC: C01G45/02 ,  H01M4/50 ,  H01M6/16

CPC classification number: H01M4/502 ,  C01G45/02 ,  C01P2002/72 ,  C01P2006/40 ,  H01M6/16

Abstract: PURPOSE: To obtain a lithium-manganese dioxide battery having a flat electric- discharge potential and great electric-discharge capacity by using as the positive active material, manganese dioxide displaying a diffraction peak near the d level of 3.60Å when X-ray diffraction is performed at the end of electric discharge.
CONSTITUTION: Manganese dioxide with which a diffraction peak appears near the diffractional crystalline surface distance (d) of 3.60Å when X-ray diffraction analysis is performed at the end of electric discharge, is used as an active material for the positive electrode 1 of a lithium-manganese dioxide battery. For the above manganese dioxide, β-MnO
2 and the like prepared by thermally treating electrolytic manganese dioxide or chemically-synthesized manganese dioxide at high temperature before nitric acid is added to the thus obtained product and then the mixture is thermally treated can be used. However, the above manganese dioxide is not restricted to these compounds and various types of manganese dioxide which display the above diffraction peak after the end of the electric discharge test can be specifically used as the positive active material.
COPYRIGHT: (C)1985,JPO&Japio

Abstract translation: 目的：为了通过使用正极活性物质获得具有平坦的放电电位和高放电容量的二氧化锰电池，当X射线衍射为X射线衍射时，二氧化锰在d水平附近显示3.60A附近的衍射峰 在放电结束时进行。 构成：在放电结束时进行X射线衍射分析时，在衍射峰出现在衍射峰附近的衍射峰（d）为3.60Ang的二氧化锰用作正极1的活性物质 锂二氧化锰电池。 对于上述二氧化锰，通过在将硝酸添加到所得到的产品中之前，在高温下热处理电解二氧化锰或化学合成的二氧化锰，然后混合物进行热处理而制备的β-MnO 2等。 然而，上述二氧化锰不限于这些化合物，并且可以特别地使用在放电试验结束后显示上述衍射峰的各种类型的二氧化锰作为正极活性物质。

公开(公告)号：JPS60166229A

公开(公告)日：1985-08-29

申请号：JP1892484

申请日：1984-02-04

Applicant: SONY CORP

Inventor： KAMIHIRA AKIRA ,  ARANAKA SUKEKO ,  TAMURA HIDEMASA

IPC: C01G45/02 ,  H01M4/50

Abstract: PURPOSE:To prepare high-purity beta-MnO2 at low cost stably, by treating electrolytic MnO2 or chemical synthesized MnO2 at high temperature, heat-treating it with nitric acid. CONSTITUTION:gamma-MnO2 such as electrolytic MnO2, chemically synthesized MnO2, etc. as a raw material is heated at 420-650 deg.C. In this heat treatment, beta-MnO2 is formed by phase transition of gamma-MnO2, Mn2O3 is produced simultaneously by thermal decomposition, and a mixture of both of the compounds is obtained. >=0.4Ml of 13 normal HNO3 based on 1g mixture of beta-MnO2 and Mn2O3, namely >=0.52g equivalent HNO3 is added to the mixture, and heated at 170-500 deg.C, so that high-purity beta-MnO2 containing no Mn2O3 is prepared stably from the inexpensive raw material.

公开(公告)号：JPS60103030A

公开(公告)日：1985-06-07

申请号：JP20694483

申请日：1983-11-04

Applicant: SONY CORP

Inventor： KAMIHIRA AKIRA ,  SUZUKI MASAYUKI ,  YAMANOI HIROSHI ,  TAMURA HIDEMASA

IPC: C01G25/00 ,  H01B3/10 ,  H01B3/12

Abstract: PURPOSE:To manufacture the titled fine solid soln. particles as a high-purity uniform dielectric material having superior activity without carrying out heat treatment by mixing a Zr compound with a Ti compound, adding a Ba salt, and bringing them into a reaction in a strongly alkaline soln. CONSTITUTION:A Zr compound such as ZrCl4 or its hydrolyzate is mixed with a Ti compound such as TiCl4 or its hydrolyzate in a prescribed ratio, and a Ba salt such as Ba(NO3)2 is added. They are brought into a reaction in a strongly alkaline aqueous soln. at a temp. close to the b.p., and a produced precipitate is washed with water or warm water to remove well alkali ions such as K , Na or Li . The precipitate is then separated by filtration and dried. The titled fine solid soln. particles having high crystallizability are synthesized from the liq. phase without carrying out heat treatment. Accordingly, ununiformity in the Curie point and electrostatic characteristics due to a difference in calcining temp. is remarkably reduced, and the reliability is improved.

公开(公告)号：JPS6071525A

公开(公告)日：1985-04-23

申请号：JP17762383

申请日：1983-09-26

Applicant: SONY CORP

Inventor： SUZUKI MASAYUKI ,  SATAKE KAZUMOTO ,  YAMANOI HIROSHI ,  KAMIHIRA AKIRA ,  TAMURA HIDEMASA

IPC: C01G19/00

Abstract: PURPOSE:To obtain MgSn(OH)6 of high purity by reacting the hydrolyzate of an Sn compound or a soluble stannate with an Mg salt in an aqueous strong alkali soln. and by treating the reaction product with a dil. acid soln. CONSTITUTION:The hydrolyzate of an Sn compound or a soluble stannate is reacted with an Mg salt in an aqueous string alkali soln. at a temp. close to the b.p. SnCl4, Sn(NO3)4 or the like is used as the Sn compound, Na2SnO3.3H2O, K2SnO3.3H2O or the like is used as the soluble stannate, and MgCl2.6H2O, Mg(NO3)2.6H2O or the like is used as the Mg salt. The resulting precipitate is treated with a dil. acid soln. and washed with water or warm water to remove alkali ions such as K, Na or Li ions. Filtration and drying are then carried out to obtain fine MgSn(OH)6 particles.