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公开(公告)号：JP2006030224A
公开(公告)日：2006-02-02
申请号：JP2004204136
申请日：2004-07-12
Inventor： EGUCHI MOMOKO , YANASHIMA KATSUNORI , ARAKIDA TAKAHIRO , NAKADA HIDEHIKO , NARUSE AKIKAZU , OKUBO YOSHIKAZU
Abstract: PROBLEM TO BE SOLVED: To provide an optical coupling device in which an processing error produced at the time of processing an optical waveguide to expose a core end part thereof is not contained in an alignment error of the optical waveguide core end part and other optical components, and to provide an optical waveguide permitting to manufacture such an optical coupling device. SOLUTION: The optical waveguide 1 is a united body of clads 2, 4 and a core 3 as a light guide. An end face 6 of the optical waveguide 1 is formed into a reflecting surface inclined at about 45 degrees by dicing processing, and the optical waveguide 1 is optically coupled to an optical element 26 via reflection by the inclined end face 6. By similar dicing processing, a V-groove 8 for a position alignment marker is formed at a position a predetermined distance 9 off the upper end 7 of the inclined end face 6 of the optical waveguide 1 upper part, and the optical waveguide 1 is accurately positioned to a supporting body 11 by concavo-convex engagement using the V-groove 8. The supporting body 11 is provided with a means for position alignment with a mounting substrate mounted with the optical element 26 at the position a predetermined distance off the concavo-concave engagement position. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract translation: 要解决的问题：提供一种光耦合装置，其中处理光波导以产生其芯端部的处理误差不包含在光波导芯端部的对准误差中，并且 其他光学部件，并且提供允许制造这种光耦合装置的光波导。 解决方案：光波导1是作为导光体的包层2,4和芯3的组合体。 光波导1的端面6通过切割处理形成为以大约45度倾斜的反射面，并且光波导1经由倾斜端面6的反射光耦合到光学元件26.通过类似的切割处理 在与光波导1上部的倾斜端面6的上端7相距预定距离9的位置处形成有用于位置对准标记的V形槽8，并且将光波导1精确地定位到支撑 主体11通过使用V形槽8的凹凸接合。支撑体11设置有用于与安装有光学元件26的安装基板位于距离凹凹接合位置预定距离的位置的位置对准的装置。 版权所有（C）2006，JPO＆NCIPI
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公开(公告)号：JP2005347465A
公开(公告)日：2005-12-15
申请号：JP2004164417
申请日：2004-06-02
Inventor： NAKAO ISAMU , YANASHIMA KATSUNORI
Abstract: PROBLEM TO BE SOLVED: To provide an inexpensive semiconductor light emitting device manufactured by a simple manufacturing process. SOLUTION: The semiconductor light emitting device 10 comprises an n-type semiconductor 12, an active layer 13, and a p-type semiconductor 14 while the active layer 13 is constituted so as to be pinched between the n-type semiconductor 12 and the p-type semiconductor 14. Emission center ion 18 and a quantum dot 19 are contained in the active layer 13 and when a voltage is impressed on the semiconductor light emitting device 10 through ohmic electrodes (11, 15), energy is moved to the emission center ion 18 by FRET to excite the emission center ion 18. Thereafter, the energy level of the emission center ion 18 is changed to an emission level and, further, is changed to a normal energy level. In this case, the emission center ion 18 emits light of a predetermined visible wavelength. The emission center ion 18 is selected from rare earth metallic ion, transition metallic ion or the like so as to emit the light of such a visible wavelength. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract translation: 要解决的问题：提供一种通过简单的制造工艺制造的便宜的半导体发光器件。 解决方案：半导体发光器件10包括n型半导体12，有源层13和p型半导体14，而有源层13被构造成夹在n型半导体12之间 和p型半导体14.发射中心离子18和量子点19包含在有源层13中，并且当通过欧姆电极（11,15）将电压施加在半导体发光器件10上时，能量被移动到 通过FRET发射中心离子18以激发发射中心离子18.此后，将发射中心离子18的能级改变为发射水平，并且进一步改变为正常能级。 在这种情况下，发射中心离子18发射预定可见波长的光。 发射中心离子18选自稀土金属离子，过渡金属离子等，以发射这种可见波长的光。 版权所有（C）2006，JPO＆NCIPI
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公开(公告)号：JP2005226154A
公开(公告)日：2005-08-25
申请号：JP2004154140
申请日：2004-05-25
Inventor： YASUDA TOSHIKAZU , MEMESAWA SATOHIKO , KAZETAGAWA MUNEYUKI , OMAE AKIRA , YANASHIMA KATSUNORI
Abstract: PROBLEM TO BE SOLVED: To provide a method for vapor deposition, which can form a deposited film having a uniform thickness and a high purity, e.g. an amorphous organic compound film or a multicomponent-codeposited film having a smooth surface, and keep a utilization efficiency of an evaporation material and a film-forming rate high by minimizing deposition of a depositing substance in a vacuum chamber, and an apparatus therefor.
SOLUTION: A substrate 3 and an evaporation source 5 are placed so as to face each other in the vacuum chamber 1. Around the evaporation source 5, an introductory part 11 for a gas 15 is disposed to form a gas flow 10 which flows from the circumference of the evaporation source 5 toward the substrate 3. The gas flow 10 controls the scattering direction 9 of vapor molecules of the depositing substance emitted from the evaporation source 5 toward the substrate 3. A peripheral wall of a vessel 5b containing the depositing substance 5a is formed in a protruding manner, and the temperature of the protruding part 18 of the peripheral wall is controlled to a temperature preventing deposition of the depositing substance 5a, so that the protruding part 18 functions as a barrier or a guide for leading the vapor molecules toward the substrate 3.
COPYRIGHT: (C)2005,JPO&NCIPIAbstract translation: 要解决的问题：提供一种可以形成具有均匀厚度和高纯度的沉积膜的气相沉积方法，例如， 无定形有机化合物膜或具有光滑表面的多组分共沉积膜，并且通过最小化沉积物质在真空室中的沉积以及其设备来保持蒸发材料的利用效率和成膜速率高的多组分共沉积膜。 解决方案：将基板3和蒸发源5在真空室1中彼此面对放置。在蒸发源5周围设置用于气体15的引导部分11，以形成气流10，气流 从蒸发源5的周边朝向基板3流动。气流10将从蒸发源5发射的沉积物质的蒸汽分子的散射方向9控制到基板3。容器5b的周壁包含 以突出的方式形成沉积物质5a，并且将周壁的突出部分18的温度控制为防止沉积物质5a沉积的温度，使得突出部分18用作屏障或用于引导的引导件 蒸汽分子朝向基板3。版权所有（C）2005，JPO＆NCIPI
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公开(公告)号：JP2004333728A
公开(公告)日：2004-11-25
申请号：JP2003127818
申请日：2003-05-06
Inventor： SUZUKI KENJI , YANASHIMA KATSUNORI
IPC: G02B6/122 , G02B6/13 , H01L31/0232 , H01S5/42
Abstract: PROBLEM TO BE SOLVED: To provide a waveguide type optical integrated device in which large capacity and bidirectional optical communication is realized and to provide its manufacturing method. SOLUTION: A waveguide type optical integrated device 10 optically couples an optical waveguide section 10A which has a plurality of cores and an optical element section 10B which has a plurality of optical elements. The optical waveguide section 10A is provided with a plurality of cores 18 which are extended in a three dimensional manner and a clad which is extended around and along the cores 18 and has a refractive index that is smaller than the refractive index of the cores 18. The plurality of optical elements of the optical element section 10B is arranged with a pitch which is same as that of the core patterns of the cross section of the section 10A that is perpendicular to the extended direction of the cores 18. A groove section 12 is formed in the section 10A which includes the plurality of cores 18 so that the cross sections of the cores 18 are exposed and the optical element section 10B is mounted into the groove section 12 so that the plurality of optical elements and cores 18 are optically coupled. COPYRIGHT: (C)2005,JPO&NCIPI
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115.发明专利
公开(公告)号：JP2004297047A
公开(公告)日：2004-10-21
申请号：JP2004062894
申请日：2004-03-05
Inventor： SATO YASUO , ARAKIDA TAKAHIRO , HINO TOMOKIMI , NAGATAKE TAKESHI , YANASHIMA KATSUNORI
Abstract: PROBLEM TO BE SOLVED: To provide a compound semiconductor laminated structure having a structure to reduce the distortion caused by a lattice mismatch between a substrate and a semiconductor layer formed on the substrate and also to provide a light-emitting element and a light-receiving element having this structure. SOLUTION: The compound semiconductor laminated structure is structured such that a fourth buffer layer 40 formed of InP is provided as the uppermost layer of a laminated buffer layer 42 on a substrate 32, the laminated buffer layer 42 being formed to have lattice constants varied stepwise or continuously, and a particular compound semiconductor layer 44 having a lattice constant differing from that of the substrate 32 is formed on an upper surface of this fourth buffer layer 40 . COPYRIGHT: (C)2005,JPO&NCIPI
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Patent Agency Ranking
公开(公告)号：JP2004279620A
公开(公告)日：2004-10-07
申请号：JP2003069185
申请日：2003-03-14
Inventor： SUZUKI KENJI , YANASHIMA KATSUNORI
Abstract: PROBLEM TO BE SOLVED: To provide an optical integrated circuit which can perform both optical transmission and optical reception at the same time and suitably miniaturize an optical circuit. SOLUTION: The optical integrated circuit 10 has a 1st photodiode array 14 and a 1st surface light emission semiconductor laser array 16 and also has a 1st two-dimensional array 17 arranged in one area of a substrate 12, a 2nd photodiode array 18, and a 2nd surface light emitting semiconductor laser array 20, and is equipped with a 2nd two-dimensional array 21 arranged in the other area of the substrate 12, and a three-dimensional flexible optical wire 22 which optically connects the 1st two-dimensional array 17 and 2nd two-dimensional array 21. The three-dimensional flexible optical wire 22 connects the 1st surface light emission semiconductor laser array 16 and 2nd photodiode array 18 and further connects the 2nd surface light emission semiconductor laser array 20 and 1st photodiode array 14. COPYRIGHT: (C)2005,JPO&NCIPI
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117.发明专利
公开(公告)号：JP2004217968A
公开(公告)日：2004-08-05
申请号：JP2003004754
申请日：2003-01-10
Inventor： YANASHIMA KATSUNORI , MEMESAWA SATOHIKO , SASAKI KOJI , NARUI HIRONOBU , TANAKA SADAO
Abstract: PROBLEM TO BE SOLVED: To provide a film deposition system where the temperature of gas such as carrier gas or organic material-containing gas is uniformly controlled to the desired one with high response so that a homogenous organic film of high quality can efficiently be deposited. SOLUTION: In the organic film deposition system, as piping carrying carrier gas or organic material-containing gas, a double pipe 510 is used. Gas flow passage 512 of the carrier gas or organic material-containing gas is formed on the inside of the internal pipe 511, and an oil flow passage 514 of heated oil is formed on the space between the external pipe 513 and the internal pipe 511. Oil whose temperature is set to the prescribed one by an oil heating circulation device 517 is made to flow from an oil inflow port 515 into the oil flow passage 514, and is made to flow out from an oil outflow port 516. By the oil, the internal pipe 511 is heated, and the gas passing through the gas flow passage 512 is also uniformly heated to a prescribed temperature. COPYRIGHT: (C)2004,JPO&NCIPI
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公开(公告)号：JP2004079349A
公开(公告)日：2004-03-11
申请号：JP2002238275
申请日：2002-08-19
Inventor： SASAKI KOJI , TANAKA SADAO , NARUI HIRONOBU , YANASHIMA KATSUNORI , MEMESAWA SATOHIKO
Abstract: PROBLEM TO BE SOLVED: To provide a thin film forming device in which a mask for coating picture elements dividedly is attached to a base board using a permanent magnet, capable of precluding a dislocation when fixing the mask.
SOLUTION: The thin film forming device includes the base board 3 held by a holder 2, and the mask 5 attached to the surface of the base board 3 is attracted to the permanent magnet 4 installed on the rear surface of the holder 2 and fixed to the base board 3. The permanent magnet 4 is moved in the directions approaching and separating from the holder 2 by a sliding mechanism 7. When setting the mask 5, the permanent magnet 4 is moved to a position apart from the mask 5, to align without being influenced by the magnetic force of the permanent magnet 4. When fixing the mask 5, the permanent magnet 4 is moved in an approaching direction toward the mask 5 gradually, to slowly fix the mask 5.
COPYRIGHT: (C)2004,JPO-
公开(公告)号：JP2004043854A
公开(公告)日：2004-02-12
申请号：JP2002200779
申请日：2002-07-10
Inventor： YANASHIMA KATSUNORI , NARUI HIRONOBU , MEMESAWA SATOHIKO , SASAKI KOJI
Abstract: PROBLEM TO BE SOLVED: To provide a thin-film forming apparatus for forming an organic thin film with a uniform thickness by uniformly supplying a source gas to the surface of a substrate, and to provide a thin-film forming method. SOLUTION: The thin-film forming apparatus comprises a treatment chamber 11, a substrate holder 13 installed in the treatment chamber 11, a source-gas feed pipe 21 for supplying a source gas G1 consisting of film-forming components into the treatment chamber 11, and a stirring-gas feed pipe 31 for supplying a stirring gas G2 toward the source gas supplied from the source-gas feed pipe 21, into the treatment chamber 11. The thin-film forming method is characterized by using the apparatus. COPYRIGHT: (C)2004,JPO
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公开(公告)号：JP2004043839A
公开(公告)日：2004-02-12
申请号：JP2002199569
申请日：2002-07-09
Inventor： YANASHIMA KATSUNORI , NARUI HIRONOBU , MEMESAWA SATOHIKO , SASAKI KOJI
Abstract: PROBLEM TO BE SOLVED: To provide a film-forming apparatus for forming a film with a uniform thickness within a substrate surface, and a film-forming method. SOLUTION: The film-forming apparatus 1 comprises a raw-steam chamber 11 for storing a raw steam G of a film-forming raw material S in a predetermined condition therein, having a first aperture 11a provided with a first gate 13 which is formed so as to have approximately the same shape as the surface Wa to be film-formed of a substrate W, and can be freely opened and closed; a film-forming chamber 15 which is communicated to the raw-steam chamber 11 through the first aperture 11a and has a second aperture 15a arranged so as to face the first aperture 11a; and a substrate support means 19 which has a support surface 20 for holding the substrate W and can freely blockade the second aperture 15a in a state of making the support surface 20 face to the film-forming chamber 15. The film-forming method with the use of the film-forming apparatus 1 comprises filling the raw steam chamber 11 with the raw steam G of the film-forming raw material S into a predetermined state, and then exposing the face to be film-formed of the substrate W to the raw steam G in the raw steam chamber 11, to deposit the film-forming raw material on the surface to be film-formed. COPYRIGHT: (C)2004,JPO
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