公开(公告)号：EP2056461A1

公开(公告)日：2009-05-06

申请号：EP07792809.1

申请日：2007-08-21

Applicant: Asahi Kasei EMD Corporation

Inventor： AIBA, Yusuke

IPC: H03M3/02

CPC classification number: H03M3/372 ,  H03M1/66 ,  H03M3/43 ,  H03M3/456

Abstract: The present invention provides a continuous-time delta-sigma modulator which is configured with an SC (SCR) feedback DA (103) for improving tolerance to jitter for a clock signal and operates stably by maintaining a certain feedback amount without being influenced by a change in a production process thereof or an operating temperature condition thereof. By adjusting a reference voltage Vref that determines an output voltage of the SC feedback DA (103), it is possible to feed back a certain amount of charge from the SC feedback DA (103) to a loop filter (101). Thereby, operation of the delta-sigma modulator is stabilized.

Abstract translation: 本发明提供一种连续时间Δ-Σ调制器，其配置有用于改善对时钟信号的抖动容限的SC（SCR）反馈DA（103），并且通过维持一定的反馈量而不受变化的影响而稳定地操作 在其生产过程中或其工作温度条件下。 通过调整确定SC反馈DA（103）的输出电压的参考电压Vref，可以将来自SC反馈DA（103）的一定量的电荷反馈到环路滤波器（101）。 因此，Δ-Σ调制器的操作是稳定的。

公开(公告)号：EP2019488A1

公开(公告)日：2009-01-28

申请号：EP07743381.1

申请日：2007-05-15

Applicant: Asahi Kasei EMD Corporation

Inventor： KAIHO, Toshio ,  MACHIDA, Junichi

IPC: H03K17/687

CPC classification number: H03F3/387 ,  H03F1/3211 ,  H03F1/34 ,  H03F3/2173 ,  H03F3/45475 ,  H03F2200/351 ,  H03F2203/45138 ,  H03F2203/45526 ,  H03K5/06 ,  H03K7/08 ,  H03K17/284

Abstract: Output signal waveform having high input signal reproducibility is outputted from inductive load or the like. Output signals V1a and V1b obtained by feeding back an output signal Vp-n1 at output terminals (50 and 51) across load L1 to input terminals (9a and 9b) are compared with an input signal Vin to detect an error between signals; a first error suppression signal Vout1 is produced such that the detected error between the signals is suppressed; inclination of first error suppression signal Vout1 is detected, and a second error suppression signal Vout2 is produced such that inclination error to input signal Vin is suppressed based on the detected inclination signal; and the ratio between the period that electric power is supplied to the load L1 and the period that electric power is not supplied to the load L1 is modified according to the error of the error suppression signal.

Abstract translation: 从感性负载等输出具有高输入信号再现性的​​输出信号波形。 将通过负载L1的输出端子（50和51）上的输出信号Vp-n1输出到输入端子（9a和9b）而获得的输出信号V1a和V1b与输入信号Vin进行比较，以检测信号之间的误差; 产生第一误差抑制信号Vout1，使得检测到的信号误差被抑制; 检测到第一误差抑制信号Vout1的倾斜，并且产生第二误差抑制信号Vout2，使得基于检测到的倾斜信号抑制对输入信号Vin的倾斜误差; 并且根据误差抑制信号的误差来修改向负载L1提供电力的周期与不向负载L1供电的周期之间的比率。

公开(公告)号：EP1380927B1

公开(公告)日：2008-12-31

申请号：EP02718620.4

申请日：2002-04-19

Applicant: Asahi Kasei EMD Corporation

Inventor： TAKATSUKA, Toshinori ,  ISHIBASHI, Kazutoshi ,  YAMASHITA, Masataka

IPC: G06F3/033

CPC classification number: G06F3/0338 ,  G05G9/047 ,  G05G2009/04744 ,  G05G2009/04755

Abstract: A pointing device being improved in assembling performance, capable of being downsized, being long in product life. Magnetic sensors (21) are disposed on a mounting substrate (24), two each symmetrically along the X axis and Y axis. A switch (28) is disposed on the silicone resin (23) side of the mounting substrate (24) to provide a switching function so that the switching function is satisfied when a magnet cover (25) is pushed in a magnet (22) direction. Although originally designed to output coordinates values of an input point, the pointing device can be provided with a determining function in addition to coordinates values by being given a switching function. Silicone resin (23), when under an external force, easily deforms, and, when the external force is removed, immediately restores to an initial condition not under the external force.

公开(公告)号：EP1143536B1

公开(公告)日：2008-12-03

申请号：EP99959791.7

申请日：1999-12-13

Applicant: Asahi Kasei EMD Corporation

Inventor： NAGANO, Shuichi ,  Fiedler, Horst-Lothar

IPC: H01L43/06 ,  G01D3/028

CPC classification number: G01K7/21 ,  G01D3/02 ,  G01P21/02

Abstract: A sensor (1) produces the output that changes linearly with absolute temperature. In response to the output, a reference voltage generator (13) produces reference voltages (Vhigh, Vlow) that change linearly with absolute temperature. A Schmidt trigger (14) compares the output signal from a sensor signal amplifier (12) with the reference voltages and produces output. The sensor signal amplifier (12) with a temperature-independent amplification factor amplifies the output signal from the sensor (1) while performing offset compensation. The sensor signal processing circuit (2) is formed of thin-film silicon deposited on an insulating substrate. The output from the sensor (1) undergoes accurate temperature compensation over a wide temperature range, resulting in reliable operation at high temperature.

Abstract translation: 传感器（1）产生随绝对温度线性变化的输出。 响应该输出，参考电压发生器（13）产生与绝对温度线性变化的参考电压（Vhigh，Vlow）。 施密特触发器（14）将来自传感器信号放大器（12）的输出信号与参考电压进行比较并产生输出。 具有温度无关放大因子的传感器信号放大器（12）放大来自传感器（1）的输出信号，同时执行偏移补偿。 传感器信号处理电路（2）由沉积在绝缘基板上的薄膜硅形成。 传感器（1）的输出在很宽的温度范围内进行精确的温度补偿，从而在高温下可靠运行。

公开(公告)号：EP0780920B1

公开(公告)日：2007-04-18

申请号：EP95932918.6

申请日：1995-09-27

Applicant: Asahi Kasei EMD Corporation

Inventor： YAMASHITA, Masaya

IPC: H01M10/38 ,  H01M10/40 ,  H01M6/10 ,  H01M2/34

CPC classification number: H01M2/34 ,  H01M2/0217 ,  H01M2/16 ,  H01M6/10 ,  H01M10/0431 ,  H01M10/05 ,  H01M2200/00 ,  H01M2300/0025

Abstract: A non-aqueous cell comprising a rolled electrode assembly including a positive plate with an active layer, a negative plate with an active layer, and a separator between the active layers of the positive and the negative plates; and a case that contains the electrode assembly and a non-aqueous electrolyte. In this cell, a metallic portion disposed in association with the positive plate and having an equipotential to the positive plate is equipped on at least one of the sides thereof with a portion having no active layer, and thus forms a positive plate equipotential exposed metallic portion (α) extending in a lontitudinal direction for a length at least one turn, and this positive plate equipotential exposed metallic portion (α) is so arranged as to oppose a negative plate equipotential exposed metallic portion (β) disposed in association with the negative plate, for a length at least one turn. The invention discloses also a non-aqueous cell produced by employing a simple laminate electrode assembly or a zigzag-woven laminate electrode assembly, which has substantially the same structure as the rolled electrode assembly. Due to the unique construction described above, even when the case is crushed by an external pressure or when overcharge is generated due to abnormality in a charger circuit, etc, or when a nail, etc, pierces the cell or when the cell is abnormally heated from outside, an abnormal rise of the cell temperature is limited due to internal short-circuit of the metals having sufficiently low resistance, and the safety of the cell is therefore ensured.

公开(公告)号：EP1536286A1

公开(公告)日：2005-06-01

申请号：EP03741329.1

申请日：2003-07-10

Applicant: Asahi Kasei EMD Corporation

Inventor： KANATANI, Ryuichiro ,  KIMURA, Masashi ,  MARUYAMA, Kimiyuki

IPC: G03F7/038 ,  G03F7/027 ,  G03F7/004 ,  C08G73/06

CPC classification number: G03F7/0387 ,  G03F7/035

Abstract: Disclosed is a negative type photosensitive resin composition comprising (A) a polyamide having a photopolymerizable unsaturated double bond, (B) a monomer having a photopolymerizable unsaturated double bond, (C) a photopolymerization initiator and (D) a melamine resin.

Abstract translation: 公开了一种负型型感光性树脂组合物，其包含（A）具有光聚合性不饱和双键的聚酰胺，（B）具有光聚合性不饱和双键的单体，（C）光聚合引发剂和（D）三聚氰胺树脂。

公开(公告)号：EP1491854A1

公开(公告)日：2004-12-29

申请号：EP03746166.2

申请日：2003-04-02

Applicant: Asahi Kasei EMD Corporation

Inventor： HIKIDA, Koichi ,  YAMASHITA, Masaya ,  KANAYAMA, Yuuichi ,  FUKUMOTO, Hirofumi

IPC: G01C9/06 ,  H01L29/84

CPC classification number: G01P15/18 ,  G01C9/06 ,  G01C9/12 ,  G01C2009/068 ,  G01P15/0802 ,  G01P15/123 ,  G01P2015/0828 ,  G01P2015/084

Abstract: A tilt sensor capable of measuring a tilt angle by utilizing piezoresistive effect without selectively etching a substrate having piezoresistors formed therein, wherein the backside of the silicon substrate 1 having piezoresistors R1 to R4 formed therein is uniformly ground to a deflectable thickness, both ends of the silicon substrate 1 are supported by a support member 2, and a weight member 3 is provided at the center of the silicon substrate 1 through a convex portion 3a.

Abstract translation: 该传感器具有硅衬底（1），其两端由支撑结构（2），和（3）并通过投影部分（3a）安装在硅基板的中心的重量被支撑。 基板具有可变形的厚度形成压电termoresistencias（R1 R4）。 因此独立权利要求中包括了以下内容：（1）倾斜传感器的制造方法; 和（2）斜度测量方法。

公开(公告)号：EP3896717A1

公开(公告)日：2021-10-20

申请号：EP21168282.8

申请日：2021-04-14

Applicant: EMD Corporation ,  Tomoegawa Co., Ltd.

Inventor： EBE, Akinori ,  TSUDA, Hajime ,  MORIUCHI, Hideki

IPC: H01J37/32 ,  H01Q1/00

Abstract: [OBJECT]
To provide a radio-frequency antenna through which a high amount of current can be efficiently passed even at a radio-frequency level for plasma generation, as well as a plasma processing device utilizing the radio-frequency antenna.
[MEANS FOR SOLVING PROBLEM]
A radio-frequency antenna (10) according to the present invention includes a metal fiber sheet. A plasma processing device according to the present invention includes: a vacuum container (21) including a wall (211) having an opening (213); a radio-frequency antenna (10) including a metal fiber sheet and located at the opening (213); and a dielectric protection plate (12) located closer to the interior of the vacuum container (21) than the radio-frequency antenna (10) and configured to close the opening (213) in a gas-tight manner. The radio-frequency antenna (10) including a metal fiber sheet has a larger surface area and an accordingly lower impedance to a radio-frequency current than a radio-frequency antenna including a metal plate having the same outer shape. Therefore, it allows a radio-frequency current commonly used for plasma generation (e.g., at a frequency of 13.56 MHz) to be more efficiently passed through in large amounts.

公开(公告)号：EP3032588A1

公开(公告)日：2016-06-15

申请号：EP16152713.0

申请日：2008-12-19

Applicant: Asahi Kasei EMD Corporation

Inventor： Koricic, Marko ,  Suligoj, Tomislav ,  Mochizuki, Hidenori ,  Morita, Soichi

IPC: H01L29/735 ,  H01L21/331 ,  H01L21/8249 ,  H01L21/8222 ,  H01L21/8248 ,  H01L27/06 ,  H01L29/08 ,  H01L21/225 ,  H01L29/10 ,  H01L21/265

CPC classification number: H01L27/0623 ,  H01L21/2257 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/26586 ,  H01L21/8249 ,  H01L29/0808 ,  H01L29/1008 ,  H01L29/1045 ,  H01L29/6625 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/735

Abstract: A configuration of a lateral transistor suited for the hybrid-integration (BiCMOS) of a high-performance lateral transistor (HCBT) and a CMOS transistor, and a method for manufacturing the lateral transistor are provided. A semiconductor device includes a HCBT 100 and a CMOS transistor 200 hybrid-integrated therein. The HCBT 100 has an open region 21 opened by etching a device isolating oxide film 6 surrounding an n-hill layer 11, an emitter electrode 31A and a collector electrode 31B each of which is formed in the open region 21 and is composed of a polysilicon film having such a thickness as to expose the n-hill layer 11 exposed by etching the device isolating oxide film, and an ultrathin oxide film 24 covering at least a part of the n-hill layer 11. The ultrathin oxide film 24 functions as a protective film for protecting the n-hill layer 11 from being etched when the polysilicon film is etched to form the emitter 20 electrode 31A and the collector electrode 31B.

Abstract translation: 提供了适用于高性能横向晶体管（HCBT）和CMOS晶体管的混合集成（BiCMOS）的横向晶体管的结构以及制造横向晶体管的方法。 半导体器件包括混合集成在其中的HCBT 100和CMOS晶体管200。 HCBT 100具有通过蚀刻围绕n-hill层11的器件隔离氧化膜6，发射电极31A和集电极31B而开放的开放区域21，每个形成在开放区域21中并且由多晶硅 具有通过蚀刻器件隔离氧化膜而暴露的n-hill层11的厚度的膜和覆盖n-hill层11的至少一部分的超薄氧化膜24.超薄氧化物膜24用作 当蚀刻多晶硅膜以形成发射极20电极31A和集电极31B时，用于保护n-hill层11的保护膜不被蚀刻。

公开(公告)号：EP3029716A1

公开(公告)日：2016-06-08

申请号：EP15196973.0

申请日：2008-09-12

Applicant: Asahi Kasei EMD Corporation

Inventor： Shibata, Yoshihiko ,  Miyahara, Masatoshi ,  Ikeda, Takashi ,  Kunimi, Yoshihisa

IPC: H01L21/02 ,  H01L21/203 ,  H01L21/205 ,  H01L29/26 ,  H01L43/06 ,  H01L29/267 ,  C30B25/18 ,  C30B29/40

CPC classification number: H01L29/267 ,  C30B25/18 ,  C30B29/40 ,  H01L21/02381 ,  H01L21/02546 ,  H01L21/02658 ,  H01L43/065

Abstract: The present invention relates to a compound semiconductor substrate having a reduced dislocation (defect) density at an interface between a Si substrate and a compound semiconductor layer, and a method for producing the compound semiconductor substrate. Contaminants, such as organic matter and metal, on a surface of a Si substrate were removed by subjecting the Si substrate sequentially to organic washing, acid washing and alkaline washing, whereby a flat oxide film (not shown) was formed (S31). The oxide film on the surface was removed by using an aqueous hydrogen fluoride solution having a concentration of 1.0% by weight, whereby hydrogen termination treatment was performed (S32). The Si substrate immediately after being subjected to the hydrogen termination treatment was placed in a vacuum apparatus, and then the temperature of the Si substrate was raised in a vacuum apparatus (S33). If the substrate temperature is raised without any operation, the termination hydrogen is released. Before the hydrogen was released, pre-irradiation with As was performed (S34). Thus, an interface between the Si substrate and the compound semiconductor layer was prepared. Several minutes later, irradiation with Ga and As was performed (S35). Thereby, the compound semiconductor was formed (S36).

Abstract translation: 本发明涉及在Si衬底和化合物半导体层之间的界面处具有减少的位错（缺陷）密度的化合物半导体衬底及其制造方法。 通过使Si衬底依次进行有机洗涤，酸洗和碱洗，除去形成平坦氧化物膜（未图示）的Si衬底表面上的有机物和金属等污染物（S31）。 使用浓度为1.0重量％的氟化氢水溶液除去表面的氧化膜，由此进行氢终止处理（S32）。 将刚刚进行氢终止处理后的Si衬底置于真空装置中，然后在真空装置中升温Si衬底的温度（S33）。 如果衬底温度升高而没有任何操作，则释放终止氢。 在释放氢之前，进行As的预照射（S34）。 因此，制备了Si衬底和化合物半导体层之间的界面。 几分钟后，进行Ga和As的照射（S35）。 由此形成化合物半导体（S36）。