Abstract:
A method for designing a diamond coated wire for use in a wafer slicing system includes adjusting an initial diamond size distribution until an intermediate diamond size distribution is generated, wherein the intermediate diamond size distribution has a corresponding simulated penetration thickness value less than or equal a predetermined penetration thickness value, and wherein penetration thickness is a parameter proportional to a depth of subsurface damage that would occur when slicing an ingot using a diamond coated wire having an associated diamond size distribution. The method may include adjusting the intermediate diamond size distribution until a final diamond size distribution is generated, wherein the final diamond size distribution has a maximum diamond grit size that is substantially equal to a predetermined maximum diamond grit size, and manufacturing the diamond coated wire such that the diamond coated wire has a plurality of diamond grits that fit the final diamond size distribution.
Abstract:
Methods for separating halosilanes that involve use of a distillation column having a partition that divides the column into portions for producing three product fractions are disclosed. Methods and systems for producing silane by disproportionation of halosilanes that use such columns and methods for producing polycrystalline silicon are also disclosed.
Abstract:
A system for growing a crystal ingot from a melt is provided. The system includes a crucible assembly, a first heater, a second heater, and a passive heater. The crucible assembly includes a crucible and a weir separating an outer melt zone of the melt from an inner melt zone of the melt. The first heater is configured to supply thermal energy to the melt by conduction through the crucible. The second heater is configured to generate thermal radiation. The passive heater is configured to supply thermal energy to the outer melt zone by transferring thermal radiation generated by the second heater to the outer melt zone.
Abstract:
A method of improving the operation of polysilicon fluidized bed reactors is disclosed. The present disclosure is directed to the optimization of axial temperature gradients in gas-solid fluidized bed systems. Varying the width of the particle size distribution in the reactor alters the temperature gradient within the reactor, thereby providing a means of a better control of internal temperature profiles and hence better reactor performance.
Abstract:
Processes for producing polycrystalline silicon by thermal decomposition of silane are disclosed. The processes generally involve thermal decomposition of silane in a fluidized bed reactor operated at reaction conditions that result in a high rate of productivity relative to conventional production processes.
Abstract:
Processes for producing polycrystalline silicon by thermal decomposition of silane are disclosed. The processes generally involve thermal decomposition of silane in a fluidized bed reactor operated at reaction conditions that result in a high rate of productivity relative to conventional production processes.
Abstract:
Processes and systems for purifying silane-containing streams and, in particular, for purifying silane-containing streams that also contain ethylene are disclosed. The processes and systems may be arranged such that one or more ethylene reactors are downstream of light-end distillation operations.
Abstract:
Methods and systems for producing silane that use electrolysis to regenerate reactive components therein are disclosed. The methods and systems may be substantially closed-loop with respect to halogen, an alkali or alkaline earth metal and/or hydrogen.
Abstract:
A liner assembly for a substrate processing system includes a first liner and a second liner. The first liner includes an annular body and an outer peripheral surface including a first fluid guide. The first fluid guide is curved about a circumferential line extending around the first liner. The second liner includes an annular body, an outer rim, an inner rim, a second fluid guide extending between the outer rim and the inner rim, and a plurality of partition walls extending outwardly from the second fluid guide. The second fluid guide is curved about the circumferential line when the first and second liners are positioned within the processing system.
Abstract:
A computing device is configured to execute a first instance of a single-threaded script engine in a first thread associated with a first execution context, wherein the first instance of the single-threaded script engine accesses at least one shared script object through a first reference counted script base value object. The computing device is also configured to concurrently execute a second instance of the single-threaded script engine in a second thread_associated with a second execution context, wherein the second instance of the single-threaded script engine accesses the at least one shared script object through a second reference counted script base value object. The script engine does not switch between the execution contexts.