公开(公告)号：KR1020040074471A

公开(公告)日：2004-08-25

申请号：KR1020030010360

申请日：2003-02-19

Applicant: 삼성전자주식회사

Inventor： 강윤호 ,  김장섭 ,  김재홍 ,  반시영 ,  신쾌화 ,  최동훈

IPC: C08G65/08

Abstract: PURPOSE: Provided are a photo-crosslinking polymer, which ensures excellent thermostability and photostability and has good color implementability, increased productivity and reduced production cost, and a color filter using the above polymer. CONSTITUTION: The photo-crosslinking polymer is represented by formula 1, wherein n is an integer of 1-10000, and X is a compound of formula 5, 6 or 7(in which, each of R1-R10 is independently or simultaneously a hydrogen atom, a halogen atom, a nitro group, an alkyl or alkoxy group having 1-10 of carbon atoms); and is prepared by the method comprising the steps of: protecting bishydroxy phenylvaleric acid with acetic anhydride; esterifying the resultant with a photochromic spiropyran derivative of formula 2, 3 or 4; deprotecting the resultant with a base; and reacting the resultant with epichlorohydrin in the presence of sodium hydroxide. The color filter is prepared by using the above photo-crosslinking polymer.

Abstract translation: 目的：提供一种光交联聚合物，其确保优异的热稳定性和光稳定性，并且具有良好的颜色可实施性，提高的生产率和降低的生产成本，以及使用上述聚合物的滤色器。 构成：光交联聚合物由式1表示，其中n为1-10000的整数，X为式5,6或7的化合物（其中，R 1 -R 10各自独立地或同时为氢 原子，卤素原子，硝基，具有1-10个碳原子的烷基或烷氧基）; 并通过包括以下步骤的方法制备：用乙酸酐保护双羟基苯基戊酸; 用式2,3或4的光致变色螺吡喃衍生物酯化所得物; 用碱脱保护; 并在氢氧化钠存在下使所得物与表氯醇反应。 通过使用上述光交联聚合物制备滤色器。

公开(公告)号：KR100425347B1

公开(公告)日：2004-03-30

申请号：KR1020020018025

申请日：2002-04-02

Applicant: 삼성전자주식회사

Inventor： 강윤호

IPC: H01L29/775 ,  B82Y10/00

CPC classification number: B82Y10/00 ,  H01L29/66439 ,  H01L29/7613 ,  Y10S977/937

Abstract: A single-electron transistor using nanoparticles is provided. The single-electron transistor includes a first insulating film, a gate electrode patterned in a stripe form on the first insulating film, a second insulating film formed on exposed surfaces of the first insulating film and the gate electrode in such a way that a stepped portion is formed at a boundary between the gate electrode and the first insulating film, first and second electrodes formed on the second insulating film in such a way that a groove is formed at the stepped portion to expose a surface of the second insulating film, the first and second electrodes being separated from each other by the groove, and nanoparticles positioned at the groove and contacting with the first and second electrodes, the nanoparticles being channels for electron transfer. The single-electron transistor is manufactured using previously prepared nanoparticles and a general semiconductor process, thereby enabling low cost, mass production and operation at room temperature.

Abstract translation: 提供使用纳米颗粒的单电子晶体管。 所述单电子晶体管包括第一绝缘膜，在所述第一绝缘膜上以条形图案化的栅电极，以在所述第一绝缘膜和所述栅电极的暴露表面上形成的第二绝缘膜， 形成在栅电极和第一绝缘膜之间的边界处，第一和第二电极形成在第二绝缘膜上，使得在台阶部分处形成凹槽以暴露第二绝缘膜的表面，第一 和第二电极通过凹槽彼此分开，以及位于凹槽处并与第一和第二电极接触的纳米颗粒，纳米颗粒是用于电子传递的通道。 单电子晶体管是使用预先制备的纳米粒子和一般半导体工艺制造的，由此实现了低成本，大批量生产和室温下的操作。