公开(公告)号：JP2011137888A

公开(公告)日：2011-07-14

申请号：JP2009296418

申请日：2009-12-25

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： KAMIMURA SATOSHI ,  TARUYA SHINJI ,  ENOMOTO YUICHIRO ,  KATO KEITA ,  IWATO KAORU

IPC: G03F7/039 ,  C08F220/12 ,  G03F7/004 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method by which a pattern excellent in exposure latitude (EL) and line width variance (LWR) or CD (critical dimension) uniformity (CDU) is formed; to provide a pattern formed by the same; to provide a chemically amplified resist composition used in the pattern forming process; and to provide a resist film formed from the resist composition.
SOLUTION: The pattern forming method includes (α) a process for forming a film by using a chemically amplified resist composition containing (A) a resin having a non-aromatic cyclic organic group, (B) a compound generating an acid by the irradiation with an actinic ray or radiation, and (C) a crosslinking agent, (β) a process for exposing the formed film, and (γ) a process for developing the exposed film by using a developing solution containing an organic solvent. A pattern formed by the pattern forming method, a chemically amplified resist composition used in the pattern forming method, and a resist film formed from the resist composition are also provided.
COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供形成曝光宽容度（EL）和线宽方差（LWR）或CD（临界尺寸）均匀性（CDU）优异的图案的图案形成方法; 以提供由其形成的图案; 以提供在图案形成过程中使用的化学放大抗蚀剂组合物; 并提供由抗蚀剂组合物形成的抗蚀剂膜。 解决方案：图案形成方法包括：（α）通过使用含有（A）具有非芳族环状有机基团的树脂的化学放大抗蚀剂组合物（B）通过以下方法生成酸的化合物 用光化射线或辐射照射，（C）交联剂，（β）曝光成膜的方法，（γ）使用含有有机溶剂的显影液显影曝光膜的方法。 还提供了通过图案形成方法形成的图案，在图案形成方法中使用的化学放大型抗蚀剂组合物和由抗蚀剂组合物形成的抗蚀剂膜。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2011076056A

公开(公告)日：2011-04-14

申请号：JP2010076455

申请日：2010-03-29

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： KATO TAKAYUKI ,  SAEGUSA HIROSHI ,  IWATO KAORU ,  HIRANO SHUJI ,  IIZUKA YUSUKE ,  YAMAGUCHI SHUHEI ,  SHIBUYA AKINORI

IPC: G03F7/039 ,  C08F222/22 ,  C08F222/28 ,  G03F7/004 ,  G03F7/38 ,  H01L21/027

CPC classification number: G03F7/0046 ,  G03F7/0397 ,  G03F7/0758 ,  G03F7/2041

Abstract: PROBLEM TO BE SOLVED: To provide an actinic ray-sensitive or radiation-sensitive resin composition which enables formation of a pattern having good pattern collapse resistance and few development defects, and a pattern forming method using the composition. SOLUTION: There is provided the actinic ray-sensitive or radiation-sensitive resin composition wherein transmittance for light of wavelength 193 nm for film thickness of 100 nm is 55-80%, and the pattern forming method using the composition. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供能够形成具有良好的图案抗塌陷性和很少显影缺陷的图案的光化射线敏感或辐射敏感性树脂组合物，以及使用该组合物的图案形成方法。 解决方案：提供光敏感或辐射敏感性树脂组合物，其中对于膜厚度为100nm的波长为193nm的光的透射率为55-80％，并且使用该组合物的图案形成方法。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2010271649A

公开(公告)日：2010-12-02

申请号：JP2009125508

申请日：2009-05-25

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： KOSHIJIMA KOSUKE ,  HIRANO SHUJI ,  SAEGUSA HIROSHI ,  IIZUKA YUSUKE ,  IWATO KAORU ,  YAMAMOTO KEI

IPC: G03F7/039 ,  C08F220/12 ,  G03F7/004 ,  G03F7/075 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide an actinic ray-sensitive or radiation-sensitive resin composition which reduces coating defects and enables provision of an excellent pattern even in immersion exposure, and a pattern forming method using the same. SOLUTION: The actinic ray-sensitive or radiation-sensitive resin composition includes: (A) a resin which is decomposed by the action of an acid and exhibits increased solubility in an alkali developer; (B) a compound which generates an acid upon irradiation with actinic rays or radiation; (C) a resin having at least either a fluorine atom or a silicon atom and a polarity conversion group which is decomposed by the action of an alkali developer and exhibits increased solubility in the alkali developer; and (D) a mixed solvent containing at least one solvent selected from the group represented by general formulae (S1)-(S3), wherein the total content of the solvent is 3-20 mass% in all solvents. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供减少涂层缺陷并能够在浸渍曝光中提供优异图案的光化射线敏感或辐射敏感性树脂组合物，以及使用其的图案形成方法。 光敏射线敏感性树脂组合物包括：（A）通过酸的作用而分解并在碱性显影剂中显示增加的溶解性的树脂; （B）在用光化射线或辐射照射时产生酸的化合物; （C）具有氟原子或硅原子中至少一个的树脂和通过碱性显影剂的作用分解的极性转换基团，并且在碱性显影剂中表现出增加的溶解性; 和（D）含有至少一种选自通式（S1） - （S3）所示基团的溶剂的混合溶剂，其中所有溶剂中溶剂的总含量为3-20质量％。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2010256872A

公开(公告)日：2010-11-11

申请号：JP2010067077

申请日：2010-03-23

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： IWATO KAORU

IPC: G03F7/039 ,  C08F16/24 ,  C08F20/22 ,  G03F7/004 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide an actinic ray-sensitive or radiation-sensitive resin composition which is superior in various properties of roughness of line width, suppression of bubble defects, suppression of particles, and reduction of scum.
SOLUTION: The actinic ray-sensitive or radiation-sensitive resin composition includes: a resin (A) which has a repeating unit expressed by general formula (1) and increases the dissolution speed in an alkaline developer due to the action of an acid; a resin (B) having at least one repeating units obtained by cyclic polymerization of compounds expressed by general formulas (2) to (4) or a resin obtained by deriving from this resin; a compound (C) which generates an acid by actinic rays or radiation; and a solvent (D).
COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供在线宽粗糙度的各种性质，抑制气泡缺陷，抑制颗粒以及减少浮渣方面优异的光化射线敏感或辐射敏感性树脂组合物。 光敏射线敏感性或辐射敏感性树脂组合物包括：具有由通式（1）表示的重复单元的树脂（A），并增加碱性显影剂中的溶解速度，这是由于 酸; 通过由通式（2）〜（4）表示的化合物的环状聚合得到的至少一种重复单元的树脂（B）或由该树脂得到的树脂; 通过光化射线或辐射产生酸的化合物（C）; 和溶剂（D）。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2010159413A

公开(公告)日：2010-07-22

申请号：JP2009281057

申请日：2009-12-10

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： HIRANO SHUJI ,  IWATO KAORU ,  SAEGUSA HIROSHI ,  IIZUKA YUSUKE

IPC: C08F20/26 ,  C07D493/20 ,  G03F7/039

CPC classification number: C07D493/20 ,  C07D493/14 ,  C08F220/30

Abstract: PROBLEM TO BE SOLVED: To provide a polymer compound that has excellent affinity to developer and is used for fine pattern formation in semiconductor production, and a new polymerizable compound for producing the polymer compound. SOLUTION: The polymerizable compound represented by general formula (ca-1) or (cb-1) and the polymer compound obtained by polymerizing the same are provided. Wherein, A, Z 1 , Z 2 , Ta, Tb, Tc, and L each independently represents a predetermined group, linkage, or atom; m, n, p, q, and r each independently represents a predetermined integer. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供对显影剂具有优异亲和性并用于半导体生产中的精细图案形成的高分子化合物和用于制备高分子化合物的新的可聚合化合物。 解决方案：提供由通式（ca-1）或（cb-1）表示的可聚合化合物和通过聚合获得的聚合物化合物。 其中，A，Z 1，Z SB 2，Ta，Tb，Tc和L各自独立地表示预定的基团，键或原子; m，n，p，q和r各自独立地表示预定的整数。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2010102336A

公开(公告)日：2010-05-06

申请号：JP2009223409

申请日：2009-09-28

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： KATO TAKAYUKI ,  TAKAHASHI AKIRA ,  IWATO KAORU

IPC: G03F7/40 ,  G03F7/039 ,  H01L21/027

CPC classification number: G03F7/0397 ,  C08F220/28 ,  G03F7/0046 ,  G03F7/2041 ,  G03F7/40

Abstract: PROBLEM TO BE SOLVED: To provide an excellent pattern forming method employed to form a minute pattern in the manufacture of a semiconductor and suppress both of line width roughness and pattern collapse, and to provide a photosensitive composition used in this method.
SOLUTION: This pattern forming method includes a process for forming a resist film by using the photosensitive composition having a specific repeating unit having at least a polar group and containing a resin (A) for increasing solubility in an alkaline developer by action of acid, a process for exposing the resist film, a heating process (PEB process), a developing process, and a post-baking process. In the post-baking process, post-baking is performed by setting a heating temperature to a temperature not lower than [a glass-transition temperature (Tg) of the resin (A)-20°C]. The photosensitive composition used in this pattern forming method is also provided.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：为了提供在半导体制造中形成微小图案的极好的图案形成方法，并抑制线宽粗糙度和图案塌陷，并提供在该方法中使用的光敏组合物。 解决方案：该图案形成方法包括通过使用具有至少极性基团的特定重复单元并含有用于增加在碱性显影剂中的溶解度的树脂（A）的光敏组合物形成抗蚀剂膜的方法， 酸，曝光抗蚀剂膜的方法，加热工艺（PEB工艺），显影过程和后烘烤过程。 在后烘烤处理中，通过将加热温度设定为不低于[树脂（A）的玻璃化转变温度（Tg）-20℃]的温度进行后烘烤。 还提供了用于该图案形成方法的光敏组合物。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2010039146A

公开(公告)日：2010-02-18

申请号：JP2008201284

申请日：2008-08-04

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： YAMAGUCHI SHUHEI ,  IWATO KAORU

IPC: G03F7/039 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a positive-type resist composition which causes no pattern fall not only in ordinary exposure (dry exposure) but also in liquid immersion exposure, cancels a trade-off relation, is broad in exposure latitude and reduces line edge roughness, and to provide a pattern-forming method using the positive-type resist composition. SOLUTION: The positive-type resist composition contains: a specific compound which generates a sulfonic acid, which has ester structure and a fluorine atom, by the radiation of active beams or radiation; and a resin which is 150°C or below in glass transition temperature and increases its solubility in an alkali developer due to the action of an acid. The pattern-forming method is also provided using the positive-type resist composition. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：为了提供不仅在普通曝光（干式曝光）中而且在液浸式曝光中不产生图案下落的正型抗蚀剂组合物，抵消折衷关系，曝光宽容度和 降低线边缘粗糙度，并提供使用正型抗蚀剂组合物的图案形成方法。 正型抗蚀剂组合物包含：通过有源光束或辐射的辐射产生具有酯结构和氟原子的磺酸的特定化合物; 和玻璃化转变温度为150℃以下的树脂，并且由于酸的作用而增加其在碱性显影剂中的溶解度。 还使用正型抗蚀剂组合物提供图案形成方法。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2009227838A

公开(公告)日：2009-10-08

申请号：JP2008075645

申请日：2008-03-24

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： IWATO KAORU ,  INABE HARUKI

IPC: C08L33/22 ,  C08F20/50 ,  C08K5/01 ,  C09D4/00 ,  C09D5/00 ,  C09D7/12 ,  C09D133/04 ,  C09D133/18 ,  C09D133/24 ,  C09D149/00 ,  H01B3/44 ,  H01L21/312

Abstract: PROBLEM TO BE SOLVED: To provide a composition for film formation capable of forming an insulating film that has a low dielectric constant and excellent mechanical strengths and has good surface properties (film surface properties) and heat resistance. SOLUTION: The composition for film formation comprises a polymer (A) comprising a monomer unit represented by formula (1) (wherein R 1 is an alkyl group or an aryl group; X is -COOR 2 , -CON(R 2 ) 2 or -CN; R 2 is a hydrogen atom, an alkyl group or an aryl group; and when a plurality of R 2 exist, they may be the same or different from each other and may be linked together to form a ring structure). COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供能够形成具有低介电常数和优异的机械强度并且具有良好的表面性质（膜表面性质）和耐热性的绝缘膜的成膜组合物。 解决方案：用于成膜的组合物包含包含由式（1）表示的单体单元的聚合物（A）（其中R 1是烷基或芳基; X是-COOR -CON（R 2 SP 2）或-CN; R 2 SP 2是氢原子，烷基 基团或芳基;当存在多个R SP 2时，它们可以相同或不同，并且可以连接在一起形成环结构）。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2009215441A

公开(公告)日：2009-09-24

申请号：JP2008061075

申请日：2008-03-11

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： ARAYAMA KYOHEI ,  IWATO KAORU ,  HIRAOKA HIDETOSHI

IPC: C09D149/00 ,  C08G61/10 ,  C09D5/25 ,  H01B3/30 ,  H01L21/312

Abstract: PROBLEM TO BE SOLVED: To provide a composition for forming a film, which allows a film having high heat resistance, high mechanical strength, and a low dielectric constant to be formed, and to provide an insulating film formed by using the same and an electronic device having the insulating film.
SOLUTION: The composition for forming a film contains a polymer having a constitutive repeating unit represented by formula (1) or (2). The insulating film is formed by using the composition, and the electronic device has the insulating film. In the formula (1), R
1 and R
2 each independently represents a hydrogen atom or a substituent; X represents a substituent, n represents an integer of 0-2, and L
1 represents a single bond or a divalent linking group. In the formula (2), R
3 and R
4 each independently represents a hydrogen atom or a substituent; and L
2 represents a divalent linking group, and two carbon-carbon triple bonds are in cis positions to carbon-carbon double bond.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种形成膜的组合物，其能够形成具有高耐热性，高机械强度和低介电常数的膜，并提供通过使用其形成的绝缘膜 以及具有绝缘膜的电子器件。 解决方案：用于形成膜的组合物含有具有由式（1）或（2）表示的组成型重复单元的聚合物。 通过使用该组合物形成绝缘膜，电子器件具有绝缘膜。 在式（1）中，R 1和R 2各自独立地表示氢原子或取代基; X表示取代基，n表示0-2的整数，L 1表示单键或二价连接基团。 在式（2）中，R 3和R 4各自独立地表示氢原子或取代基; 并且L 2 表示二价连接基团，并且两个碳 - 碳三键与碳 - 碳双键处于顺式位置。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2009084405A

公开(公告)日：2009-04-23

申请号：JP2007255325

申请日：2007-09-28

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： ARAYAMA KYOHEI ,  HIRAOKA HIDETOSHI ,  IWATO KAORU

IPC: C08L101/00 ,  C08F38/00 ,  C08J5/18 ,  C08K5/01 ,  C09D5/25 ,  C09D7/12 ,  C09D201/00 ,  H01B3/30 ,  H01B3/44 ,  H01L21/312 ,  H01L21/768

Abstract: PROBLEM TO BE SOLVED: To provide a film forming composition with which a film having high heat resistance, high mechanical strength, low permittivity and excellent storage stability over time is formed, an insulating film obtained by using the film forming composition, and an electronic device having the insulating film. SOLUTION: The insulating film forming composition includes a compound (A) having at least one substructure represented by general formula (1) in the molecule and a resin for the insulating film or its precursor (B), (in the formula, R 1 -R 6 respectively independently represent arbitral substituents, wherein arbitral substituents R 1 -R 6 may be connected to each other and form a ring structure, and two substituents on an identical carbon (R 1 and R 2 , R 3 and R 4 , R 5 and R 6 ) are united with each other so as to represent a double bond). COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种成膜组合物，其形成具有高耐热性，高机械强度，低介电常数和随时间优异的储存稳定性的膜，使用该成膜组合物获得的绝缘膜，以及 具有绝缘膜的电子器件。 解决方案：绝缘膜形成组合物包括在分子中具有至少一个由通式（1）表示的亚结构的化合物（A）和用于绝缘膜或其前体（B）的树脂（式中， R 1 -R 6 分别独立地表示仲
仲取代基，其中仲式取代基R 1可以连接 并且形成环结构，并且在相同的碳（R 1 SP＆gt;和R 2 SP 2，R SP 3和/或SP SP 2）上的两个取代基 > 4 ，R 5 和R 6 ）彼此结合以表示双键）。 版权所有（C）2009，JPO＆INPIT