公开(公告)号：US20240329299A1

公开(公告)日：2024-10-03

申请号：US18126745

申请日：2023-03-27

Applicant: GlobalFoundries U.S. Inc.

Inventor： Yusheng Bian

IPC: G02B6/12 ,  G02B6/122 ,  G02B6/125

CPC classification number: G02B6/12004 ,  G02B6/1228 ,  G02B6/125 ,  G02B2006/12104 ,  G02B2006/12121

Abstract: Structures for an edge coupler and methods of forming such structures. The structure comprises a semiconductor substrate, a first waveguide core including a curved section and an end that terminates the curved section, and a second waveguide core including a section disposed adjacent to the curved section of the first waveguide core. The first waveguide core is positioned between the second waveguide core and the semiconductor substrate.

公开(公告)号：US20240210621A1

公开(公告)日：2024-06-27

申请号：US18597173

申请日：2024-03-06

Applicant: GlobalFoundries U.S. Inc.

Inventor： Brett T. Cucci ,  Yusheng Bian ,  Abdelsalam Aboketaf ,  Edward W. Kiewra

IPC: G02B6/122 ,  G02B6/12 ,  G02B6/125 ,  G02B6/132

CPC classification number: G02B6/1228 ,  G02B6/1223 ,  G02B6/125 ,  G02B6/132 ,  G02B2006/12061 ,  G02B2006/12147 ,  G02B6/1225

Abstract: Disclosed are embodiments of a photonic integrated circuit (PIC) structure with a waveguide core having tapered sidewall liner(s) (e.g., symmetric tapered sidewall liners on opposing sides of a waveguide core, asymmetric tapered sidewall liners on opposing sides of a waveguide core, or a tapered sidewall liner on one side of a waveguide core). In some embodiments, the tapered sidewall liner(s) and waveguide core have different refractive indices. In an exemplary embodiment, the waveguide core is a first material (e.g., silicon) and the tapered sidewall liner(s) is/are a second material (e.g., silicon nitride) with a smaller refractive index than the first material. In another exemplary embodiment, the waveguide core is a first compound and the tapered sidewall liner(s) is/are a second compound with the same elements (e.g., silicon and nitrogen) as the first compound but with a smaller refractive index. Also disclosed are method embodiments for forming such a PIC structure.

公开(公告)号：US20240201438A1

公开(公告)日：2024-06-20

申请号：US18084921

申请日：2022-12-20

Applicant: GlobalFoundries U.S. Inc.

Inventor： Yusheng Bian

IPC: G02B6/122 ,  G02B6/13 ,  H01L31/0232 ,  H01L31/028 ,  H01L31/105 ,  H01L31/18

CPC classification number: G02B6/1228 ,  G02B6/13 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/105 ,  H01L31/1808

Abstract: Structures including a photodetector and methods of forming a structure including a photodetector. The structure comprises a photodetector including a pad having a side edge and a light-absorbing layer disposed on the pad. The structure further comprises a waveguide core including a tapered section positioned adjacent to the side edge of the pad and the light-absorbing layer. The tapered section has a width dimension that decreases with decreasing distance from the side edge of the pad.

公开(公告)号：US20240176067A1

公开(公告)日：2024-05-30

申请号：US18058967

申请日：2022-11-28

Applicant: GlobalFoundries U.S. Inc.

Inventor： Shesh Mani Pandey ,  Yusheng Bian ,  Ravi Prakash Srivastava

IPC: G02B6/12 ,  G02B6/122 ,  G02B6/136 ,  H01L25/16

CPC classification number: G02B6/12004 ,  G02B6/1228 ,  G02B6/136 ,  H01L25/167

Abstract: Structures and methods implement an enlarged multilayer nitride waveguide. The structure may include an inter-level dielectric (ILD) layer over a substrate. A first enlarged multilayer nitride waveguide is positioned in the ILD layer in a region of the substrate. A second multilayer nitride waveguide may also be provided in the ILD layer. A lower cladding layer defines a lower surface of the nitride waveguide(s). The lower cladding layer has a lower refractive index than the nitride waveguide(s). Additional lower refractive index cladding layers can be provided on the upper surface and/or sidewalls of the nitride waveguide(s). The enlarged nitride waveguide may be implemented with other conventional silicon and nitride waveguides.

公开(公告)号：US20240085626A1

公开(公告)日：2024-03-14

申请号：US17941055

申请日：2022-09-09

Applicant: GlobalFoundries U.S. Inc.

Inventor： Yusheng Bian

IPC: G02B6/126 ,  G02B6/122 ,  G02B6/13

CPC classification number: G02B6/126 ,  G02B6/1228 ,  G02B6/13 ,  G02B2006/12061

Abstract: Structures for a polarization rotator and methods of forming a structure for a polarization rotator. The structure comprises a first waveguide core having a first section, a second section, a first terminating end, and a second terminating end opposite to the first terminating end. The first and second sections of the first waveguide core are arranged between the first terminating end and the second terminating end. The structure further comprises a second waveguide core including a first tapered section having a first overlapping arrangement with the first section of the first waveguide core and a second tapered section having a second overlapping arrangement with the second section of the first waveguide core. The first waveguide core comprises a first material, and the second waveguide core comprises a second material different from the first material.

公开(公告)号：US11886021B2

公开(公告)日：2024-01-30

申请号：US17705911

申请日：2022-03-28

Applicant: GlobalFoundries U.S. Inc.

Inventor： Yusheng Bian

IPC: G02B6/02 ,  G02B6/122 ,  G02B6/13 ,  G02B6/30 ,  G02B6/42 ,  G02B6/12

CPC classification number: G02B6/4203 ,  G02B6/12002 ,  G02B6/1228 ,  G02B6/13 ,  G02B6/305

Abstract: Photonics structures including a slotted waveguide and methods of fabricating such photonics structures. The photonics structure includes a slotted waveguide having a first waveguide core and a second waveguide core laterally positioned adjacent to the first waveguide core. The first waveguide core is separated from the second waveguide core by a slot. The photonics structure further includes a metamaterial structure having a plurality of elements separated by a plurality of gaps and a dielectric material in the plurality of gaps. The metamaterial structure and the slot of the slotted waveguide are positioned with an overlapping arrangement.

公开(公告)号：US11880065B2

公开(公告)日：2024-01-23

申请号：US17588470

申请日：2022-01-31

Applicant: GlobalFoundries U.S. Inc.

Inventor： Yusheng Bian ,  Steven M. Shank ,  Takako Hirokawa

IPC: G02B6/12 ,  G02B6/13 ,  G02B6/293

CPC classification number: G02B6/12007 ,  G02B6/13 ,  G02B6/29338

Abstract: Structures including an edge coupler and methods of fabricating a structure including an edge coupler. The structure includes an edge coupler having a longitudinal axis, a first ring resonator, and a second ring resonator. The first ring resonator has a first center point that is spaced from the longitudinal axis of the edge coupler by a first perpendicular distance. The second ring resonator has a second center point that is spaced from the longitudinal axis of the edge coupler by a second perpendicular distance.

公开(公告)号：US20240004140A1

公开(公告)日：2024-01-04

申请号：US17853186

申请日：2022-06-29

Applicant: GlobalFoundries U.S. Inc.

Inventor： Yusheng Bian

IPC: G02B6/122 ,  G02B6/13

CPC classification number: G02B6/1228 ,  G02B6/13 ,  G02B2006/12121

Abstract: Structures for an edge coupler and methods of fabricating a structure for an edge coupler. The structure comprises an edge coupler including a first waveguide core and a second waveguide core. The first waveguide core is positioned in a vertical direction between the second waveguide core and a substrate. The first waveguide core has a first longitudinal axis, the second waveguide core has a second longitudinal axis, and the second longitudinal axis of the second waveguide core is slanted at an angle relative to the first longitudinal axis of the first waveguide core.

公开(公告)号：US20230393339A1

公开(公告)日：2023-12-07

申请号：US17834375

申请日：2022-06-07

Applicant: GlobalFoundries U.S. Inc.

Inventor： Bartlomiej Jan Pawlak ,  Michal Rakowski ,  Yusheng Bian

IPC: G02B6/293 ,  G02B6/42

CPC classification number: G02B6/2934 ,  G02B6/4215

Abstract: Structures including stacked photonics chips and methods of fabricating a structure including stacked photonics chips. The structure comprises a first chip including a first waveguide core, a ring resonator adjacent to a portion of the first waveguide core, and a first dielectric layer over the first waveguide core and the ring resonator. The first dielectric layer has a first surface. The structure further comprises a second chip including a second waveguide core and a second dielectric layer over the second waveguide core. The second dielectric layer has a second surface adjacent to the first surface of the first dielectric layer, and the second waveguide core is positioned adjacent to the ring resonator.

公开(公告)号：US11837851B2

公开(公告)日：2023-12-05

申请号：US17931933

申请日：2022-09-14

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng Bian ,  Roderick A. Augur ,  Michal Rakowski ,  Kenneth J. Giewont ,  Karen A. Nummy

IPC: H01S5/00 ,  H01S5/20 ,  H01S5/30 ,  H01S5/223 ,  H01S5/026 ,  H01S5/323 ,  H01S5/02

CPC classification number: H01S5/2018 ,  H01S5/20 ,  H01S5/2231 ,  H01S5/2232 ,  H01S5/3013 ,  H01S5/021 ,  H01S5/026 ,  H01S5/3054 ,  H01S5/32333

Abstract: A laser structure, including: a dielectric matrix formed of a first material; a laser source formed within the dielectric matrix and formed of a semiconductor material; and a plurality of side confining features formed within the dielectric matrix and extending parallel to and along a length of the laser source. The plurality of side confining features are formed of the semiconductor material.