公开(公告)号：US07418251B2

公开(公告)日：2008-08-26

申请号：US11021295

申请日：2004-12-23

Applicant: Lianjun Liu

Inventor： Lianjun Liu

IPC: H04B1/28

CPC classification number: H03H7/0115 ,  H01F17/0006 ,  H01F27/40 ,  H03H7/1708 ,  H03H7/1758 ,  H03H7/1766 ,  H03H2001/0078

Abstract: A radio frequency (“RF”) harmonic filter circuit as disclosed herein is fabricated using integrated passive device (“IPD”) technology. The RF harmonic filter circuit is configured to provide second, third, and fourth harmonic rejection while providing good input and output impedance matching. The RF harmonic filter circuit employs only one IPD loop inductance (preferably used for a second harmonic resonance circuit), which results in a significant die/package size reduction. The RF harmonic filter circuit also employs a combined circuit that performs input and/or output impedance matching and third harmonic rejection.

Abstract translation: 本文公开的射频（“RF”）谐波滤波器电路使用集成无源器件（“IPD”）技术制造。 RF谐波滤波器电路被配置为提供第二，第三和第四谐波抑制，同时提供良好的输入和输出阻抗匹配。 RF谐波滤波器电路仅使用一个IPD环路电感（优选用于二次谐波谐波电路），这导致显着的管芯/封装尺寸减小。 RF谐波滤波器电路还采用组合电路，其执行输入和/或输出阻抗匹配和三次谐波抑制。

公开(公告)号：US20080026709A1

公开(公告)日：2008-01-31

申请号：US11494821

申请日：2006-07-28

Applicant: Lianjun Liu ,  Melvy F. Miller

Inventor： Lianjun Liu ,  Melvy F. Miller

IPC: H04B1/04 ,  H01Q11/12

CPC classification number: H04B1/0458 ,  H04B1/0067

Abstract: Methods and apparatus are provided to enable a transceiver (200) or transmitter including a single PA line-up (210) to transmit signals having frequencies in two or more different frequency bands, and/or having two or more different modulation types, and/or having two or more different RF power levels. The single PA line-up includes at least one variable matching circuit (216) and a variable harmonic filter (240) to tune match and tune filter communication signals prior to transmission. The variable matching circuit and the variable harmonic filter each include at least one variable capacitive element (2160 and 2400) that switches ON/OFF depending on whether a low frequency signal or a high frequency signal is being transmitted. Each variable capacitive element includes separate direct current and radio frequency terminals to enable the single PA line-up to change signal modulation and/or RF power levels in addition to frequencies.

Abstract translation: 提供了方法和装置，以使包括单个PA阵列（210）的收发机（200）或发射机能够发送具有两个或多个不同频带中的频率和/或具有两个或多个不同调制类型的频率，和/ 或具有两个或更多个不同的RF功率电平。 单个PA阵列包括至少一个可变匹配电路（216）和可变谐波滤波器（240），以在传输之前调谐匹配和调谐滤波器通信信号。 可变匹配电路和可变谐波滤波器各自包括至少一个可变电容元件（2160和2400），其根据是否正在发送低频信号或高频信号来接通/断开。 每个可变电容元件包括单独的直流电和射频终端，以使得单个PA阵列除频率之外还能改变信号调制和/或RF功率电平。

公开(公告)号：US20060141978A1

公开(公告)日：2006-06-29

申请号：US11021295

申请日：2004-12-23

Applicant: Lianjun Liu

Inventor： Lianjun Liu

IPC: H04B1/28 ,  H04B1/16

CPC classification number: H03H7/0115 ,  H01F17/0006 ,  H01F27/40 ,  H03H7/1708 ,  H03H7/1758 ,  H03H7/1766 ,  H03H2001/0078

Abstract: A radio frequency (“RF”) harmonic filter circuit as disclosed herein is fabricated using integrated passive device (“IPD”) technology. The RF harmonic filter circuit is configured to provide second, third, and fourth harmonic rejection while providing good input and output impedance matching. The RF harmonic filter circuit employs only one IPD loop inductance (preferably used for a second harmonic resonance circuit), which results in a significant die/package size reduction. The RF harmonic filter circuit also employs a combined circuit that performs input and/or output impedance matching and third harmonic rejection.

Abstract translation: 本文公开的射频（“RF”）谐波滤波器电路使用集成无源器件（“IPD”）技术制造。 RF谐波滤波器电路被配置为提供第二，第三和第四谐波抑制，同时提供良好的输入和输出阻抗匹配。 RF谐波滤波器电路仅使用一个IPD环路电感（优选用于二次谐波谐波电路），这导致显着的管芯/封装尺寸减小。 RF谐波滤波器电路还采用组合电路，其执行输入和/或输出阻抗匹配和三次谐波抑制。

公开(公告)号：US5609775A

公开(公告)日：1997-03-11

申请号：US405718

申请日：1995-03-17

Applicant: Lianjun Liu

Inventor： Lianjun Liu

IPC: H01L21/3213 ,  H01L21/02

CPC classification number: H01L21/32135

Abstract: A method for dry etching a composite metal film, consisting of an aluminum overlay film, a titanium--tungsten film, and a titanium underlay film, is described. The process uses an organic photoresist as a mask and features improved etch selectivity and non-tapered sidewalls. The addition of CF.sub.4, to the etching chemistry used to pattern titanium--tungsten films, increases the selectivity between the photoresist and titanium--tungsten, allowing for thinner resists to be used, and thus finer resolution to be achieved. The introduction of N2 to the etching chemistry results in a N.sub.2 containing polymer to be formed during the etching procedure, on the sidewalls of the etched structure. The polymer prevents the isotropic component of the reactive ion etching process to attack the metal structure, thus allowing for non-tapered structures to be obtained.

Abstract translation: 描述了由铝覆盖膜，钛钨膜和钛底衬膜组成的复合金属膜的干蚀刻方法。 该方法使用有机光致抗蚀剂作为掩模，并具有改进的蚀刻选择性和非锥形侧壁。 在用于图案钛钨膜的蚀刻化学中添加CF4增加了光致抗蚀剂和钛 - 钨之间的选择性，允许使用更薄的抗蚀剂，从而实现更好的分辨率。 在蚀刻化学中引入N 2导致在蚀刻过程中在蚀刻结构的侧壁上形成的含N 2的聚合物。 聚合物防止反应离子蚀刻工艺的各向同性组分侵蚀金属结构，从而可获得非锥形结构。